product selection guide

DRAM
Flash - SSD
MCP
Storage
Displays
PRODUCT
SELECTION
GUIDE
DISPLAYS, MEMORY
AND STORAGE
contacts
1H 2016
Samsung Semiconductor, Inc.
Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its
DRAM, flash, mobile and graphics memory are found in many computers — from ultrabooks to powerful servers — and
in a wide range of handheld devices such as smartphones and tablets. Samsung is also a leader in display panels for
smartphones, TVs and monitors and public information displays. In addition, Samsung provides the industry’s widest line
of storage products from the consumer to enterprise levels. These include optical disc drives as well as flash storage,
such as Solid State Drives, and a range of embedded flash storage products.
Markets
DRAM
SSD
FLASH
MOBILE/WIRELESS
NOTEBOOK PCs/
ULTRABOOKS™
DESKTOP PCs/
WORKSTATIONS
SERVERS
NETWORKING/
COMMUNICATIONS
CONSUMER
ELECTRONICS
www.samsung.com/us/samsungsemiconductor
ASIC
LOGIC
LFD/OLED
DRAM
TABLE OF CONTENTS
DRAM
PAGES 4–14
samsung.com/dram
• DDR4 SDRAM
• Graphics DRAM
• DDR3 SDRAM
• Mobile DRAM
• DDR2 SDRAM
• Ordering Info
FLASH - SSD
PAGES 15–16
samsung.com/flash
• eMMC
• Solid State Drives (SSD)
• Universal Flash Storage (UFS)
MULTI-CHIP PACKAGEs
PAGES 17–18
samsung.com/mcp
• eMMC + LPDDR2
• eMMC + LPDDR3
storage
PAGES 19–21
samsung.com/flash-ssd
• Solid State Drives (SSD)
Displays
PAGES 22-23
samsungdisplay.com
• Public Information Display (PID)
Product Classification
• SNB/UNB
• Indoor PID
• E-Board
• Outdoor PID
ContactS
samsung.com/semiconductor/sales-network
• Sales Representatives and Distributors
//
PAGES 24–25
DDR4 SDRAM COMPONENTS
Density
Voltage
4Gb
1.2V
8Gb
1.2V
Organization
1G x 4
512M x 8
256M x 16
1G x 4
512M x 8
256M x 16
1G x 8
512M x16
Part Number
K4A4G045WD-BCRC/PB
K4A4G085WD-BCRC/PB
K4A4G165WD-BCRC/PB
K4A4G045WE-BCRC/PB
K4A4G085WE-BCRC/PB
K4A4G165WE-BCRC/PB
K4A8G085WB-BCRC/PB
K4A8G165WB-BCRC/PB
# Pins-Package
78 Ball -FBGA
78 Ball -FBGA
96 Ball -FBGA
78 Ball -FBGA
78 Ball -FBGA
96 Ball -FBGA
78 ball FBGA
96 Ball -FBGA
Compliance
Lead Free & Halogen Free, Flip Chip
Lead Free & Halogen Free, Flip Chip
Lead Free & Halogen Free, Flip Chip
Lead Free & Halogen Free, Flip Chip
Lead Free & Halogen Free, Flip Chip
Lead Free & Halogen Free, Flip Chip
Lead Free & Halogen Free, Flip Chip
Lead Free & Halogen Free, Flip Chip
Speed (Mbps)
2400/2133
2400/2133
2400/2133
2400/2133
2400/2133
2400/2133
2400/2133
2400/2133
Dimensions
7.5x11mm
7.5x11mm
7.5x13.3mm
7.5x11mm
7.5x11mm
7.5x13.3mm
7.5x11mm
7.5x13.3mm
Production
Now
Now
Now
Now
Now
Now
Now
CS: '15, 1Q
DDR4 SDRAM REGISTERED MODULES
Density
Voltage
Organization
4GB
1.2V
1G x 72
8GB
16GB
1.2V
1.2V
1G x 72
2G x 72
32GB
1.2V
4G x 72
64GB TSV
1.2V
8G x 72
128GB
TSV
Notes:
1.2V
16G x 72
DDR4 4Gb (D die) based
DDR4 4Gb (E die) based DDR4 (B Die) 8Gb based Part Number
Composition
Compliance
Speed (Mbps)
Ranks
Production
M393A5143DB0-CPB
4Gb (512M x8) * 9
Lead Free & Halogen Free, Flip Chip
2133
1
Now
M393A5143DB0-CRC
4Gb (512M x8) * 9
Lead Free & Halogen Free, Flip Chip
2400
1
Now
M393A1G40DB0-CPB
4Gb (1G x4) * 18
Lead Free & Halogen Free, Flip Chip
2133
1
Now
M393A1G40DB1-CRC
4Gb (1G x4) * 18
Lead Free & Halogen Free, Flip Chip
2400
1
Now
M393A1G43DB0-CPB
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
2133
2
Now
M393A1G43DB1-CRC
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
2400
2
Now
M393A1G40EB1-CPB
4Gb (1G x4) * 18
Lead Free & Halogen Free, Flip Chip
2133
1
Now
M393A1G40EB1-CRC
4Gb (1G x4) * 18
Lead Free & Halogen Free, Flip Chip
2400
1
Now
M393A1G43EB1-CPB
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
2133
2
Now
M393A1G43EB1-CRC
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
2400
2
Now
M393A2G40DB0-CPB
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
2133
2
Now
M393A2G40DB1-CRC
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
2400
2
Now
M393A2G40EB1-CPB
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
2133
2
Now
M393A2G40EB1-CRC
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
2400
2
Now
M393A2K40BB0-CPB
8Gb (2G x4) * 18
Lead Free & Halogen Free, Flip Chip
2133
1
Now
M393A2K40BB1-CRC
8Gb (2G x4) * 18
Lead Free & Halogen Free, Flip Chip
2400
1
Now
M393A2K43BB1-CPB/CRC
8Gb (1G x8) * 18
Lead Free & Halogen Free, Flip Chip
2133/2400
2
Now
M393A4K40BB0-CPB
8Gb (2G x4) * 36
Lead Free & Halogen Free, Flip Chip
2133
2
Now
M393A4K40BB1-CRC
8Gb (2G x4) * 36
Lead Free & Halogen Free, Flip Chip
2400
2
Now
M393A8G40D40-CRB
4Gb 4H TSV (4G x4) * 36
Lead Free & Halogen Free, 4High TSV
2133
8
Now
M393A8K40B21-CRB
8Gb 2H TSV (4G x4) * 36
Lead Free & Halogen Free, 2High TSV
2133
4
Now
M393A8K40B21-CTC
8Gb 2H TSV (4G x4) * 36
Lead Free & Halogen Free, 2High TSV
2400
4
Now
M393AAK40B41-CTC
8Gb 4H TSV (8G x4) * 36
Lead Free & Halogen Free, 4High TSV
2400
8
Now
0 = IDT
0 = IDT
0 = IDT
0 = IDT
0 = IDT
0 = IDT
2 = Montage
4 = Montage
4 = Montage
4 = Montage
4 = Montage
4 = Montage
3 = Inphi
3 = Inphi
3 = Inphi
3 = Inphi
PB = DDR4-2133(15-15-15)
RC = DDR4-2400(17-17-17)
PB = DDR4-2133(15-15-15)
RC = DDR4-2400(17-17-17)
PB = DDR4-2133(15-15-15)
RC = DDR4-2400(17-17-17)
DDR4 SDRAM Load Reduced REGISTERED MODULES
Density
32GB
Voltage
1.2V
Organization
4G x 72
Part Number
Composition
Compliance
Speed (Mbps)
Ranks Production
M386A4G40DM0-CPB
4Gb DDP (2G x4) * 36
Lead Free & Halogen Free, DDP
2133
4
Now
M386A4G40DM1-CRC
4Gb DDP (2G x4) * 36
Lead Free & Halogen Free, DDP
2400
4
Now
M386A4K40BB0-CRC5
8G (2Gx4)*36
Lead Free & Halogen Free, Flip Chip 2400
2
Now
64GB
1.2V
8G x 72
M386A8K40BM1-CPB/CRC
8Gb DDP (4G x4) * 36
Lead Free & Halogen Free, DDP
2133/2400
4
Now
128GB
1.2V
16G x 72
M386AAK40B40-CUC
8Gb 4H TSV (8G x4) * 36
Lead Free & Halogen Free, DDP
2400
8
Now
Notes:
DDR4 4Gb (D die) based
DDR4 (B Die) 8Gb based
4
DDR4 SDRAM
0 = IDT
5 = IDT
0 = IDT
5 = IDT
2 = Montage
4 = Montage
4 = Montage
4 = Montage
PB = DDR4-2133(15-15-15)
RC = DDR4-2400(17-17-17)
PB = DDR4-2133(15-15-15)
RC = DDR4-2400(17-17-17)
1H 2016
samsung.com/dram
samsung.com/dram
Density
Voltage
Organization
16GB
1.2V
2G x 72
32GB
1.2V
4G x 72
Part Number
Composition
Compliance
Speed (Mbps)
Ranks
Production
M392A2G40DM0-CPB
4Gb DDP (2G x4) * 18
Lead Free & Halogen Free, DDP
2133
2
Now
M392A2K43BB0-CPB/RC
8Gb (1G x8) * 18
Lead Free & Halogen Free, Flip Chip 2133/2400
2
Now
M392A4K40BM0-CPB/RC
8Gb DDP (4G x4) * 18
Lead Free & Halogen Free, DDP
2133/2400
2
Now
Part Number
Composition
Compliance
Speed (Mbps)
Ranks
Production
M378A5143DB0-CPB
4Gb (512M x8) *8
Lead Free & Halogen Free
2133
1
Now
M378A5143EB1-CPB
4Gb (512M x8) *8
Lead Free & Halogen Free
2133
1
Now
M378A5143EB2-CRC
4Gb (512M x8) *8
Lead Free & Halogen Free
2400
1
Now
M378A1G43DB0-CPB
4Gb (512M x8) *16
Lead Free & Halogen Free
2133
2
Now
M378A1G43EB1-CRC
4Gb (512M x8) *16
Lead Free & Halogen Free
2400
2
Now
M378A1K43BB1-CPB
8Gb (1G x8) *8
Lead Free & Halogen Free
2133
2
Now
M378A1K43BB2-CRC
8Gb (1G x8) *8
Lead Free & Halogen Free
2400
2
Now
M378A2K43BB1-CPB/CRC
8Gb (1G x8) * 16
Lead Free & Halogen Free
2133/2400
2
Now
Speed (Mbps)
DDR4 SDRAM UNBUFFERED MODULES
Density
4GB
8GB
Voltage
1.2V
1.2V
Organization
512M x 64
1G x 64
16GB
1.2V
2G x 64
Notes:
PB = DDR4-2133(15-15-15)
RC = DD R4-2400(17-17-17)
DDR4 SDRAM ECC UNBUFFERED MODULES
Density
Voltage
Organization
Part Number
Composition
Compliance
Ranks
Production
4GB
1.2V
512M x72
M391A5143EB1-CPB/CRC
4Gb (512M x8) * 9
Lead Free & Halogen Free, Flip Chip 2133/2400
1
Now
M391A1G43DB0-CPB/CRC
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip 2133/2400
2
Now
M391A1K43BB1-CPB/CRC
8Gb (1G x8) * 9
Lead Free & Halogen Free, Flip Chip 2133/2400
2
Now
M391A2K43BB1-CPB/CRC
8Gb (1G x8) * 18
Lead Free & Halogen Free, Flip Chip 2133/2400
2
Now
Part Number
Composition
Compliance
Speed (Mbps)
Ranks
Production
M471A5143DB0-CPB
4Gb (512M x8) * 8
Lead Free & Halogen Free
2133
1
Now
M471A5143EB0-CPB/CRC
4Gb (512M x8) * 8
Lead Free & Halogen Free
2133/2400
1
Now
8GB
1.2V
1G x72
16GB
1.2V
2G x72
Notes:
PB = DDR4-2133(15-15-15)
RC = DDR4-2400(17-17-17)
DDR4 SDRAM SODIMM MODULES
Density
Voltage
Organization
4GB
1.2V
512M x 64
M471A1G43DB0-CPB
4Gb (512M x8) * 16
Lead Free & Halogen Free
2133
2
Now
8GB
1.2V
1G x 64
M471A1G43EB1-CPB/CRC
4Gb (512M x8) * 16
Lead Free & Halogen Free
2133/2400
2
Now
M471A1K43BB1-CPB/CRC
8Gb (1Gx8)*8
Lead Free & Halogen Free
2133/2400
1
Now
16GB
1.2V
2G x 64
M471A2K43BB1-CPB/CRC
8Gb (1G x8) * 16
Lead Free & Halogen Free
2133/2400
2
Now
Notes:
PB = DDR4-2133(15-15-15)
Speed (Mbps)
RC = DDR4-2400(17-17-17)
DDR4 SDRAM ECC SODIMM MODULES
Density
8GB
16GB
Voltage
1.2V
1.2V
Organization
1G x 72
2G x 72
samsung.com/dram
Part Number
Composition
Compliance
Ranks
Production
M474A1G43DB0-CPB
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip 2133
2
Now
M474A1G43DB1-CRC
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip 2400
2
Now
M474A1G43EB1-CPB/CRC
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip 2133/2400
2
Now
M474A2K43BB1-CPB/RC
8Gb (1G x8) * 18
Lead Free & Halogen Free, Flip Chip 2133/2400
2
Now
1H 2016
DDR4 SDRAM
5
DRAM
DDR4 SDRAM VLP REGISTERED MODULES
DDR3 SDRAM REGISTERED MODULES
Density
Voltage
1.5V
8GB
1G x 72
1.35V
1.5V
16GB
Composition
Compliance
Speed
(Mbps)
Ranks
Production
M393B1K70QB0-CMA
2Gb (512M x4) * 36
Lead Free & Halogen Free, Flip Chip
1866
2
EOL (LTS:3/31/16)
M393B1G70QH0-CMA
4Gb (1G x4) * 18
Lead Free & Halogen Free
1866
1
EOL (LTS:3/31/16)
M393B1G70EB0-CMA
4Gb (1G x4) * 18
Lead Free & Halogen Free, Flip Chip
1866
1
Now
M393B1G73QH0-CMA
4Gb (512M x8) * 18
Lead Free & Halogen Free
1866
2
EOL (LTS:3/31/16)
M393B1G73EB0-CMA
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
1866
2
Now
M393B1K70QB0-YK0
2Gb (512M x4) * 36
Lead Free & Halogen Free, Flip Chip
1600
2
EOL (LTS:3/31/16)
M393B1G70QH0-YK0
4Gb (1G x4) * 18
Lead Free & Halogen Free
1600
1
Now
M393B1G70EB0-YK0
4Gb (1G x4) * 18
Lead Free & Halogen Free, Flip Chip
1600
1
Now
M393B1G73EB0-YK0
4Gb (2R x8) * 18
Lead Free & Halogen Free, Flip Chip
1600
2
Now
M393B2G70QH0-CMA
4Gb (1G x4) * 36
Lead Free & Halogen Free
1866
2
EOL (LTS:3/31/16)
M393B2G70DB0-CMA
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
1866
2
Now
M393B2G70EB0-CMA
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
1866
2
Now
M393B2G70QH0-YK0
4Gb (1G x4) * 36
Lead Free & Halogen Free
1600
2
EOL (LTS:3/31/16)
M393B2G70DB0-YK0
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
1600
2
Now
M393B2G70EB0-YK0
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
1600
2
Now
M393B4G70DM0-YH9
4Gb DDP (2G x4) * 36
Lead Free & Halogen Free. DDP
1333
4
Now
2 = IDT (E-die)
3 = Inphi (E-die)
YK = DDR3-1600 (11-11-11)
MA = DDR3-1866 (13-13-13)
Organization Part Number
2G x 72
1.35V
32GB
1.35V
4G x 72
Notes:
8 = IDT A1 Evergreen
9 = Inphi UVGS02
DDR3 SDRAM Load Reduced REGISTERED MODULES
Density
32GB
64GB
Notes:
Voltage
Organization
1.35V
4G x 72
1.35V
1.5V
8G x 72
3 = Inphi iMB GS02B
Part Number
Composition
Compliance
Speed
(Mbps)
Ranks
Production
M386B4G70DM0-YK0
4Gb DDP (2G x4) * 36
Lead Free & Halogen Free, DDP
1600
4
Now
M386B8G70DE0-YH9(4)
4Gb QDP (4G x4) * 36
Lead Free & Halogen Free, QDP
1333
8
Now
M386B8G70DE0-CK0(4)
4Gb QDP (4G x4) * 36
Lead Free & Halogen Free, QDP
1600
8
Now
4 = Montage C1
DDR3 SDRAM VLP REGISTERED MODULES
Density
Voltage
Organization
1.5V
8GB
16GB
1G x 72
1.35V
1.5V
1.35V
2G x 72
32GB
1.35V
Notes:
2 = IDT 3 = Inphi
6
4G x 72
DDR3 SDRAM
Part Number
Composition
Compliance
Speed
(Mbps)
Ranks
Production
M392B1G70DB0-CMA
4Gb (1Gx4) * 18
Lead Free & Halogen Free, Flip Chip
1866
1
Now
M392B1G73DB0-CMA
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
1866
2
Now
M392B1G70DB0-YK0
4Gb (1Gx4) * 18
Lead Free & Halogen Free, Flip Chip
1600
1
Now
M392B1G73DB0-YK0
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
1600
2
Now
M392B2G70DM0-CMA
4Gb DDP (2G x4) * 18
Lead Free & Halogen Free, DDP
1866
2
Now
M392B2G70DM0-YK0
4Gb DDP (2G x4) * 18
Lead Free & Halogen Free, DDP
1600
2
Now
M392B4G70DE0-YH9
4Gb QDP (4G x4) * 18
Lead Free & Halogen Free, QDP
1333
4
Now
YK = DDR3-1600 MA = DDR3-1866 (13-13-13)
1H 2016
samsung.com/dram
Density
Voltage
Organization
1.5V
4GB
512M x 64
1.35V
1.5V
8GB
1G x 64
1.35V
Notes:
YK = DDR3-1600 (11-11-11)
Part Number
Composition
Compliance
Speed (Mbps)
Ranks Production
M378B5173QH0-CK0/CMA
4Gb (512M x8) * 8
Lead Free & Halogen Free
1600/1866
1
EOL(LTS: 3/31/16)
M378B5173DB0-CK0/CMA
4Gb (512M x8) * 8
Lead Free & Halogen Free. Flip Chip
1600/1866
1
Now
M378B5173EB0-CK0/CMA
4Gb (512M x8) * 8
Lead Free & Halogen Free. Flip Chip
1600/1866
1
Now
M378B5173QH0-YK0/YMA
4Gb (512M x8) * 8
Lead Free & Halogen Free
1600/1866
1
EOL(LTS: 3/31/16)
M378B5173EB0-YK0/*CMA
4Gb (512M x8) * 8
Lead Free & Halogen Free. Flip Chip
1600/1866
1
Now
M378B1G73QH0-CK0/MA
4Gb (512M x8) * 16
Lead Free & Halogen Free
1600/1866
2
EOL(LTS: 3/31/16)
M378B1G73DB0-CK0/MA
4Gb (512M x8) * 16
Lead Free & Halogen Free. Flip Chip
1600/1866
2
Now
M378B1G73EB0-CK0/CMA
4Gb (512M x8) * 16
Lead Free & Halogen Free. Flip Chip
1600/1866
2
Now
M378B1G73QH0-YK0/MA
4Gb (512M x8) * 16
Lead Free & Halogen Free
1600/1866
2
EOL(LTS: 3/31/16)
M378B1G73EB0-YK0/*CMA
4Gb (512M x8) * 16
Lead Free & Halogen Free. Flip Chip
1600/1866
2
Now
MA = DDR3-1866 (13-13-13)
* 1.35V is compatible to 1.5V
DDR3 SDRAM UNBUFFERED MODULES (ECC)
Density
4GB
8GB
Voltage
1.5V
1.35V
1.5V
Organization
512Mx72
1G x 72
1.35V
Notes:
YK0 = DDR3-1600 (11-11-11)
Part Number
Composition
Compliance
Speed (Mbps)
Ranks
Production
M391B5173EB0-CMA
4Gb (512M x8) * 9
Lead Free & Halogen Free
1866
1
Now
M391B5173EB0-YK0
4Gb (512M x8) * 9
Lead Free & Halogen Free
1600
1
Now
M391B1G73QH0-CMA
4Gb (512M x8) * 18
Lead Free & Halogen Free
1866
2
Now
M391B1G73EB0-CMA
4Gb (512M x8) * 18
Lead Free & Halogen Free
1866
2
Now
M391B1G73EB0-YK0
4Gb (512M x8) * 18
Lead Free & Halogen Free
1600
2
Now
MA = DDR3-1866 (13-13-13)
DDR3 SDRAM SODIMM MODULES
Density
Voltage
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Ranks
Production
4GB
1.35V
512M x 72
M474B5173EB0-YK0
4Gb (512M x8) * 9
Lead Free & Halogen Free, Flip Chip
1866
1
Now
M474B1G73QH0-CMA
4Gb (512M x8) * 18
Lead Free & Halogen Free
1866
2
EOL(LTS: 3/31/16)
M474B1G73EB0-CMA
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
1866
2
Now
M474B1G73QH0-YK0
4Gb (512M x8) * 18
Lead Free & Halogen Free
1600
2
EOL(LTS: 3/31/16)
M474B1G73EB0-YK000
4Gb (512M x8) * 18
Lead Free & Halogen Free, Flip Chip
1600
2
Now
1.5V
8GB
1G x 72
1.35V
samsung.com/dram
1H 2016
DDR3 SDRAM
7
DRAM
DDR3 Non ECC UNBUFFERED MODULES
DDR3 SDRAM COMPONENTS
Density Voltage
1.5V
1Gb
1.35V
1.5V
2Gb
1.35V
1.5V
4Gb
1.35V
1.5V
Organization
Part Number
# Pins- Package Compliance
Speed (Mbps)
Dimensions
Production
128M x 8
K4B1G0846G-BCH9/K0/MA
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1333/1600/1866
7.5x11mm
Now
128M x 16
K4B1G1646G-BCH9/K0/MA/NB 96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1333/1600/1866/2133 7.5x13.3mm
Now
128M x 8
K4B1G0846I-BCK0/MA/NB
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x11mm
Now
128M x 16
K4B1G1646I-BCK0/MA/NB
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x13.3mm
Now
128M x 8
K4B1G0846G-BYH9/K0
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1333/1600
7.5x11mm
Now
128M x 16
K4B1G1646G-BYH9/K0
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1333/1600
7.5x13.3mm
Now
128M x 8
K4B1G0846I-BYK0/MA
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1800
7.5x11mm
Now
128M x 16
K4B1G1646I-BYK0/MA
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1800
7.5x13.3mm
Now
256M x 8
K4B2G0846Q-BCK0/MA/NB
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x11mm
128M x 16
K4B2G1646Q-BCK0/MA/NB
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x13.3mm
512M x 8
K4B2G0846F-BCK0/MA/NB
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x11mm
Now
256M x 16
K4B2G1646F-BCK0/MA/NB
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x13.3mm
Now
512M x 4
K4B2G0446Q-BYK0
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600
7.5x11mm
256M x 8
K4B2G0846Q-BYK0/MA
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866
7.5x11mm
128M x 16
K4B2G1646Q-BYK0/MA
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866
7.5x13.3mm
256M x 8
K4B2G0846F-BK0/MA
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866
7.5x11mm
Now
Notes:
EOL(LTS:
3/31/16)
EOL(LTS:
3/31/16)
EOL(LTS:
3/31/16)
128M x 16
K4B2G1646F-BK0/MA
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866
7.5x13.3mm
Now
512M x 8
K4B4G0846D-BCK0/MA/NB
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x11mm
Now
256M x 16
K4B4G1646D-BCK0/MA/NB
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x13.3mm
Now
512M x 8
K4B4G0846E-BCK0/MA/NB
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x11mm
Now
256M x 16
K4B4G1646E-BCK0/MA/NB
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133
7.5x13.3mm
Now
1G x 4
K4B4G0446D-BYK0
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600
7.5x11mm
Now
512M x 8
K4B4G0846D-BYK0
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600
7.5x11mm
Now
256M x 16
K4B4G1646D-BYK0/MA
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866
7.5x13.3mm
Now
1G x 4
K4B4G0446E-BYK0/MA
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866
7.5x11mm
Now
512M x 8
K4B4G0846E-BYK0/MA
78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866
7.5x11mm
Now
256M x 16
K4B4G1646E-BYK0/MA
96 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866
7.5x13.3mm
Now
K4B8G1646Q-MCK0/MA
96 Ball -FBGA
Lead Free & Halogen Free
1600/1866
11x13.3mm
Now
K4G8G1646D-MCK0/MA
96 Ball -FBGA
Lead Free & Halogen Free
1600/1866
11x13.3mm
Now
K4B8G1646Q-MYK0
96 Ball -FBGA
Lead Free & Halogen Free
1600
11x13.3mm
Now
96 Ball -FBGA
Lead Free & Halogen Free
1600 / (1866)
11x13.3mm
Now
512M x 16
8Gb
1.35V
EOL(LTS:
3/31/16)
EOL(LTS:
3/31/16)
512M x 16
H9 = DDR3-1333 (9-9-9)
K4G8G1646D-MYK0/ (MA)
K0 = DDR3-1600 (11-11-11)
MA = DDR3-1866 (13-13-13)
NB = DDR3-2133 (14-14-14)
DDR2 SDRAM COMPONENTS
Density
512Mb
1Gb
Notes:
8
Organization
Part Number
# Pins-Package
Dimensions
Package
Speed (Mbps)
Production
64M x 8
K4T51083QQ-BC(E6/F7/E7/F8)
60-FBGA
7.5x9.5mm
Lead free & Halogen free , Flip chip
667/800/1066
Now
32M x 16
K4T51163QQ-BC(E6/F7/E7/F8)
84-FBGA
7.5x12.5mm
Lead free & Halogen free , Flip chip
667/800/1066
Now
128M x 8
K4T1G084QG-BC(E6/F7/E7/F8)
60-FBGA
7.5x9.5mm
Lead free & Halogen free , Flip chip
667/800/1066
Now
64M x 16
K4T1G164QG-BC(E6/F7/E7/F8)
84-FBGA
7.5x12.5mm
Lead free & Halogen free , Flip chip
667/800/1066
Now
E6 = DDR2-667 (5-5-5)
E7 = DDR2-800 (5-5-5)
DDR3 & DDR2 SDRAM
F7 = DDR2-800 (6-6-6)
F8 = DDR2-1066 (7-7-7)
1H 2016
samsung.com/dram
Type
Density
8Gb
Organization
256M x 32
GDDR5
4Gb
128M x 32
4Gb
256M x 16
gDDR3
2Gb
Notes:
128M x 16
Package & Speed Bin Codes
Part Number
Package
VDD/VDDQ
Speed Bin (MHz)
Production
K4G80325FB-HC(03/28/25)
170-FCFBGA
1.5V/1.5V
6000/7000/8000
Now
K4G80325FB-HC(03/28/25)
170-FCFBGA
1.35V/1.35V
5000/6000/(TBD)
Now
K4G41325FE-HC2(03/28/25/22)
170-FCFBGA
1.5V/1.5V
6000/7000/8000/9000
Now
K4G41325FE-HC2(03/28/25/22)
170-FCFBGA
1.35V/1.35V
5000/6000/7000/TBD
Now
K4W4G1646E-BC(1A/1B)
96-FCFBGA
1.5V/1.5V
2133/2400
Now
K4W4G1646E-BC(1A/1B)
96-FCFBGA
1.35V/1.35V
1866/2133
Now
K4W2G1646Q-BC(12/11/1A)
96-FCFBGA
1.5V/1.5V
1600/1866/2133
Now
K4W2G1646Q-BC(1A)
96-FCFBGA
1.35V/1.35V
1866
Now
K4W2G1646Q-BY(12)
96-FCFBGA
1.35V/1.35V
1600
Now
H: FBGA (Halogen Free & Lead Free) (DDR3)
B: FCFBGA (Halogen Free & Lead Free) (DDR3)
H: FCFBGA (Halogen Free & Lead Free) (GDDR5)
F: FBGA (Halogen Free & Lead Free) (GDDR5)
22: 0.22ns (9000Mbps)
25: 0.25ns (8000Mbps)
28: 0.28ns (7000Mbps)
DRAM
GRAPHICS DRAM COMPONENTS
03: 0.3ns (6000Mbps)
04: 0.4ns (5000Mbps)
05: 0.5ns (4000Mbps)
1B: 8.3ns (2400Mbps gDDR3)
1A: 1.0ns (2133Mbps gDDR3)
11: 1.1ns (1866Mbps)
12: 1.25ns (1600Mbps)
MOBILE DRAM COMPONENTS
Type
Density
Organization
1CH x 32
8Gb
2CH x 32
12Gb
1CH x32
1CH x 32
LPDDR3
16Gb
2CH x 32
1CH x 32
24Gb
2CH x 32
1CH x 32
32Gb
Package
Power
Production
K4E8E324EB-EGCF
178-FBGA, 11x11.5, SDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K4E8E324EB-AGCF
168-FBGA, 12x12, SDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF1F10EM-AGCE
253-FBGA, 11x11.5, DDP, 1600Mbps
1.8V/1.2V/1.2V
Now
K3QF1F10EM-BGCE
216-FBGA, 12x12, DDP, 1600Mbps
1.8V/1.2V/1.2V
Now
K3QF1F10EM-FGCE
256-FBGA, 14x14, DDP, 1600Mbps
1.8V/1.2V/1.2V
Now
K4E2E304EA-AGCF
168-FBGA, 12x12, DDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K4E2E304EA-AGCF
168-FBGA, 12x12, DDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K4E6E304EB-EGCF
178-FBGA, 11x11.5, DDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K4E6E304EB-AGCF
168-FBGA, 12x12, DDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF2F20BM-AGCF
253-FBGA, 11x11.5, DDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF3F30BM-BGCF
216-FBGA, 12x12, DDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF3F30BM-FGCF
256-FBGA, 14x14, DDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF3F30BM-QGCF
216-FBGA, 15x15, DDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K4EHE304EA-AGCF
168-FBGA, 12x12, QDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF6F60AM-BGCF
216-FBGA, 12x12, QDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF6F60AM-FGCF
256-FBGA, 14x14, QDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF6F60AM-QGCF
216-FBGA, 15x15, QDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K4EBE304EB-EGCF
178-FBGA, 11x11.5, QDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF4F40BM-AGCF
253-FBGA, 11x11.5, QDP, 1866Mbps
1.8V/1.2V/1.2V
Now
K3QF4F40BM-FGCF
256-FBGA, 14x14, QDP, 1866Mbps
1.8V/1.2V/1.2V
Now
8Gb
2CH x 16
K4F8E304HB-MGCJ
200-FBGA, 10x15, SDP, 3733Mbps
1.8V/1.1V/1.1V
Now
12Gb
2CH x 16
K4F2E3S4HM-MGCJ
200-FBGA, 10x15, SDP, 3733Mbps
1.8V/1.1V/1.1V
Now
2CH x 16
K4F6E304HB-MGCJ
200-FBGA, 10x15, DDP, 3733Mbps
1.8V/1.1V/1.1V
Now
4CH x 16
K3RG1G10BM-MGCH
366-FBGA, 15x15, DDP, 3200Mbps
1.8V/1.1V/1.1V
Now
2CH x 16
K4FHE3D4HM-MFCH
200-FBGA, 10x15, DDP, 3200Mbps
1.8V/1.1V/1.1V
CS
K3RG4G40MM-AGCH
272-FBGA, 15x15, DDP, 3200Mbps
1.8V/1.1V/1.1V
CS
K3RG4G40MM-MGCJ
366-FBGA, 15x15, DDP, 3733Mbps
1.8V/1.1V/1.1V
Now
K3RG2G20BM-AGCH
272-FBGA, 15x15, QDP, 3200Mbps
1.8V/1.1V/1.1V
Now
K3RG2G20BM-MGCJ
366-FBGA, 15x15, QDP, 3733Mbps
1.8V/1.1V/1.1V
Now
K3RG2G20BM-FGCH
432-FBGA, 15x15, QDP, 3200Mbps
1.8V/1.1V/1.1V
CS
K3RG6G60MM-MGCJ
366-FBGA, 15x15, QDP, 3733Mbps
1.8V/1.1V/1.1V
CS
16Gb
LPDDR4
2CH x 32
Part Number
24Gb
4CH x 16
32Gb
4CH x 16
48Gb
4CH x 16
samsung.com/dram
1H 2016
GRAPHICS & MOBILE DRAM
9
COMPONENT DRAM ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10
11
K
4
T
XX
XX
X
X
X
X
X
XX
SAMSUNG Memory
Speed
Temp & Power
Package Type
Generation
Interface (VDD, VDDQ)
Number of Internal Banks
DRAM
DRAM Type
Density
Bit Organization
1. Memory (K)
2. DRAM: 4
3. DRAM Type
B: DDR3 SDRAM
D: GDDR SDRAM
G: GDDR5 SDRAM
H: DDR SDRAM
J: GDDR3 SDRAM
M: Mobile SDRAM
N: SDDR2 SDRAM
S: SDRAM
T: DDR SDRAM
U: GDDR4 SDRAM
V: Mobile DDR SDRAM Power Efficient Address
W: SDDR3 SDRAM
X: Mobile DDR SDRAM
Y: XDR DRAM
Z: Value Added DRAM
4. Density
10: 1G, 8K/32ms
16: 16M, 4K/64ms
26: 128M, 4K/32ms
28: 128M, 4K/64ms
32: 32M, 2K/32ms
50: 512M, 32K/16ms
51: 512M, 8K/64ms
52: 512M, 8K/32ms
54: 256M, 16K/16ms
55: 256M, 4K/32ms
56: 256M, 8K/64ms
62: 64M, 2K/16ms
64: 64M, 4K/64ms
68: 768M, 8K/64ms
1G: 1G, 8K/64ms
2G: 2G, 8K/64ms
4G: 4G, 8K/64ms
5. Bit Organization
02: x 2
04: x 4
06: x 4 Stack (Flexframe)
07: x 8 Stack (Flexframe)
10
DRAM Ordering Information
08: x 8
15: x 16 (2CS)
16: x 16
26: x 4 Stack (JEDEC Standard)
27: x 8 Stack (JEDEC Standard)
30: x 32 (2CS, 2CKE)
31: x 32 (2CS)
32: x 32
6. # of Internal Banks
2: 2 Banks
3: 4 Banks
4: 8 Banks
5: 16 Banks
7. Interface ( VDD, VDDQ)
2: LVTTL, 3.3V, 3.3V
4: LVTTL, 2.5V, 2.5V
5: SSTL-2 1.8V, 1.8V
6: SSTL-15 1.5V, 1.5V
8: SSTL-2, 2.5V, 2.5V
A: SSTL, 2.5V, 1.8V
F: POD-15 (1.5V,1.5V)
H: SSTL_2 DLL, 3.3V, 2.5V
M: LVTTL, 1.8V, 1.5V
N: LVTTL, 1.5V, 1.5V
P: LVTTL, 1.8V, 1.8V
Q: SSTL-2 1.8V, 1.8V
R: SSTL-2, 2.8V, 2.8V
U: DRSL, 1.8V, 1.2V
8. Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
E: 6th Generation
F: 7th Generation
G: 8th Generation
H: 9th Generation
I: 10th Generation
J: 11th Generation
K: 12th Generation
M: 1st Generation
N: 14th Generation
Q: 17th Generation
9. Package Type
DDR2 DRAM
L: TSOP II (Lead-free & Halogen-free)
H: FBGA (Lead-free & Halogen-free)
F: FBGA for 64Mb DDR (Lead-free & Halogen-free)
6: sTSOP II (Lead-free & Halogen-free)
T: TSOP II
N: sTSOP II
G: FBGA
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
Z: FBGA (Lead-free)
DDR2 SDRAM
Z: FBGA (Lead-free)
J: FBGA DDP (Lead-free)
Q: FBGA QDP (Lead-free)
H: FBGA (Lead-free & Halogen-free)
M: FBGA DDP (Lead-free & Halogen-free)
E: FBGA QDP (Lead-free & Halogen-free)
T: FBGA DSP (Lead-free & Halogen-free, Thin)
DDR3 SDRAM
Z: FBGA (Lead-free)
H: FBGA (Halogen-free & Lead-free)
Graphics Memory
Q: TQFP
U: TQFP (Lead Free)
G: 84/144 FBGA
V: 144 FBGA (Lead Free)
Z: 84 FBGA (Lead Free)
T: TSOP
L: TSOP (Lead Free)
A: 136 FBGA
B: 136 FBGA (Lead Free)
H: FBGA (Hologen Free & Lead Free)
E: 100 FBGA (Hologen Free & Lead Free)
SDRAM
L TSOP II (Lead-free & Halogen-free)
N: STSOP II
T: TSOP II
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
1H 2016
samsung.com/dram
1
2
3
4
5
6
7
8
9
10
11
K
4
T
XX
XX
X
X
X
X
X
XX
SAMSUNG Memory
Speed
Temp & Power
Package Type
Generation
Interface (VDD, VDDQ)
Number of Internal Banks
DRAM
DRAM Type
Density
Bit Organization
XDR DRAM
J: BOC(LF) P: BOC
Mobile DRAM
Leaded/Lead Free
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X/Z: 54balls BOC Mono
J/V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch
S/D: 90balls FBGA
Monolithic (11mm x 13mm)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
M/E: 90balls FBGA DDP
10. Temp & Power - COMMON
(Temp, Power)
C: Commercial, Normal (0’C – 95’C) & Normal
Power
C: (Mobile Only) Commercial (-25 ~ 70’C), Normal
Power
J: Commercial, Medium
L: Commercial, Low (0’C – 95’C) & Low Power
L: (Mobile Only) Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR & PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial, Normal (-40’C – 85’C) & Normal
Power
P: Industrial, Low (-40’C – 85’C) & Low Power
H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM
CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
B3: DDR333 (166MHz @ CL=2.5, tRCD=3,
tRP=3) *1
A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
B0: DDR266 (133MHz @ CL=2.5, tRCD=3,
tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
samsung.com/dram
DRAM
COMPONENT DRAM ORDERING INFORMATION
DDR2 SDRAM
CC: DDR2-400 (200MHz @ CL=3, tRCD=3,
tRP=3)
D5: DDR2-533 (266MHz @ CL=4, tRCD=4,
tRP=4)
E6: DDR2-667 (333MHz @ CL=5, tRCD=5,
tRP=5)
F7: DDR2-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
E7: DDR2-800 (400MHz @ CL=5, tRCD=5,
tRP=5)
DDR3 SDRAM
F7: DDR3-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,
tRP=7)
G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,
tRP=8)
H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,
tRP=9)
K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,
tRP=11)
MA: DDR3-1866 (933MHz @ CL=13, tRCD=13,
tRP=13)
NB: DDR3-2133 (1067MHz @ CL=14, tRCD=14,
tRP=14)
Graphics Memory
18: 1.8ns (550MHz)
04: 0.4ns (2500MHz)
20: 2.0ns (500MHz)
05: 0.5ns (2000MHz)
22: 2.2ns (450MHz)
5C: 0.56ns (1800MHz)
25: 2.5ns (400MHz)
06: 0.62ns (1600MHz)
2C: 2.66ns (375MHz)
6A: 0.66ns (1500MHz)
2A: 2.86ns (350MHz)
07: 0.71ns (1400MHz)
33: 3.3ns (300MHz)
7A: 0.77ns (1300MHz)
36: 3.6ns (275MHz)
08: 0.8ns (1200MHz)
40: 4.0ns (250MHz)
1H 2016
09: 0.9ns (1100MHz)
45: 4.5ns (222MHz)
1 : 1.0ns (1000MHz)
50/5A: 5.0ns (200MHz)
1 : 1.1ns (900MHz)
55: 5.5ns (183MHz)
12: 1.25ns (800MHz)
60: 6.0ns (166MHz)
14: 1.4ns (700MHz)
16: 1.6ns (600MHz)
SDRAM (Default CL=3)
50: 5.0ns (200MHz CL=3)
60: 6.0ns (166MHz CL=3)
67: 6.7ns
75: 7.5ns PC133 (133MHz CL=3)
XDR DRAM
A2: 2.4Gbps, 36ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
Note: All Lead-free and Halogen-free products are in
compliance with RoHS
DRAM Ordering Information
11
MODULE DRAM ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10
11
12
13
M
X
XX
T
XX
X
X
X
X
X
X
XX
X
AMB Vendor
Speed
Temp & Power
PCB Revision
Package
Generation
SAMSUNG Memory
DIMM
Data bits
DRAM Component Type
Depth
Number of Banks
Bit Organization
1. Memory Module: M
2. DIMM Type
3: DIMM
4: SODIMM
3. Data bits
12: x 72 184pin Low Profile Registered DIMM
63: x 63 PC100/PC133 μSODIMM with SPD
for 144pin
64: x 64 PC100/PC133 SODIMM with SPD
for 144pin (Intel/JEDEC)
66: x 64 Unbuffered DIMM with SPD for
144pin/168pin (Intel/JEDEC)
68: x 64 184pin Unbuffered DIMM
70: x 64 200pin Unbuffered SODIMM
71: x 64 204pin Unbuffered SODIMM
74: x 72/ECC Unbuffered DIMM with SPD
for 168pin (Intel/JEDEC)
77: x 72/ECC PLL + Register DIMM with SPD
for 168pin (Intel PC100)
78: x 64 240pin Unbuffered DIMM
81: x 72 184pin ECC unbuffered DIMM
83: x 72 184pin Registered DIMM
90: x 72/ECC PLL + Register DIMM
91: x 72 240pin ECC unbuffered DIMM
92: x 72 240pin VLP Registered DIMM
93: x 72 240pin Registered DIMM
95: x 72 240pin Fully Buffered DIMM with SPD
for 168pin (JEDEC PC133)
4. DRAM Component Type
B: DDR3 SDRAM (1.5V VDD)
L: DDR SDRAM (2.5V VDD)
S: SDRAM
T: DDR2 SDRAM (1.8V VDD)
5. Depth
9.Package
09: 8M (for 128Mb/512Mb)
17: 16M (for 128Mb/512Mb)
16: 16M
28: 128M
29: 128M (for 128Mb/512Mb)
32: 32M
33: 32M (for 128Mb/512Mb)
51: 512M
52: 512M (for 512Mb/2Gb)
56: 256M
57: 256M (for 512Mb/2Gb)
59: 256M (for 128Mb/512Mb)
64: 64M
65: 64M (for 128Mb/512Mb)
1G: 1G
1K: 1G (for 2Gb)
6. # of Banks in Comp. & Interface
1: 4K/64mxRef., 4Banks & SSTL-2
2 : 8K/64ms Ref., 4Banks & SSTL-2
2: 4K/64ms Ref., 4Banks & LVTTL (SDR Only)
5: 8K/64ms Ref., 4Banks & LVTTL (SDR Only)
5: 4Banks & SSTL-1.8V
6: 8Banks & SSTL-1.8V
7. Bit Organization
0: x 4
3: x 8
4: x16
6: x 4 Stack (JEDEC Standard)
7: x 8 Stack (JEDEC Standard)
8: x 4 Stack
9: x 8 Stack
8.Generation
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
M: 1st Gen.
Q: 17th Gen.
12
DRAM Ordering Information
E: FBGA QDP (Lead-free & Halogen-free)
G: FBGA
H: FBGA (Lead-free & Halogen-free)
J: FBGA DDP (Lead-free)
M: FBGA DDP (Lead-free & Halogen-free)
N: sTSOP
Q: FBGA QDP (Lead-free)
T: TSOP II (400mil)
U: TSOP II (Lead-Free)
V: sTSOP II (Lead-Free)
Z: FBGA (Lead-free)
10. PCB Revision
0: Mother PCB
1: 1st Rev
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
A: Parity DIMM
S: Reduced PCB
U: Low Profile DIMM
11. Temp & Power
C: Commercial Temp. (0°C ~ 95°C) & Normal
Power
L: Commercial Temp. (0°C ~ 95°C) & Low Power
12. Speed
CC: (200MHz @ CL=3, tRCD=3, tRP=3)
D5: (266MHz @ CL=4, tRCD=4, tRP=4)
E6: (333MHz @ CL=5, tRCD=5, tRP=5)
F7: (400MHz @ CL=6, tRCD=6, tRP=6)
E7: (400MHz @ CL=5, tRCD=5, tRP=5)
F8: (533MHz @ CL=7, tRCD=7, tRP=7)
G8: (533MHz @ CL=8, tRCD=8, tRP=8)
H9: (667MHz @ CL=9, tRCD=9, tRP=9)
K0: (800MHz @ CL=10, tRCD=10, tRP=10)
7A: (133MHz CL=3/PC100 CL2)
13. AMB Vendor for FBDIMM
0, 5: Intel
1, 6, 8: IDT
9: Montage
Note: All Lead-free and Halogen-free products are in
compliance with RoHS
1H 2016
samsung.com/dram
1
2
3
4
5
6
7
8
9
10
11
12
M
X
XX
A
XX
X
X
X
X
X
X
XX
Speed
Temp & Power
PCB Revision
Package
Component Revision
Memory Module
DIMM Type
Data bits
DRAM Component Type
Depth
# of Banks in Comp. & Interface
Bit Organization
1. Memory Module: M
2. DIMM Type
3: R/LRDIMM
4: SODIMM
3. Data bits
74: x 72 260pin SODIMM
86: x 72 288pin Load Reduced DIMM
93: x 72 288pin Registered DIMM
4. DRAM Component Type
A: DDR4 SDRAM (1.2V VDD)
5.Depth
1G: 1G
2G: 2G
4G: 4G
8G: 8G
1K: 1G (for 8Gb)
2K: 2G (for 8Gb)
samsung.com/dram
DRAM
DDR4 SDRAM MODULE ORDERING INFORMATION
6. # of Banks in Comp. & Interface
4: 16Banks & POD-1.2V
7. Bit Organization
9.Package
B: FBGA (Halogen-free & Lead-free, Flip Chip)
M: FBGA (Halogen-free & Lead-free, DDP)
10.PCB Revision
0: x 4
3: x 8
8. Component Revision
M: 1st Gen.
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
0: None
1: 1st Rev.
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
11.Temp & Power
C: Commercial Temp. (0°C ~ 85°C) &
Normal Power
12.Speed
PB: DDR4-2133
(1066MHz @ CL=15, tRCD=15, tRP=15)
1H 2016
SDRAM Ordering Information
13
DDR4 SDRAM MEMORY ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10
11
K
4
A
XX
XX
X
X
X
X
X
XX
Speed
Temp & Power
Package Type
Revision
Interface (Vdd, Vddq)
#of Internal Banks
Samsung Memory
DRAM
DRAM Type
Density
Bit Organization
1. Samsung Memory: K
6. # of Internal Banks
2. DRAM: 4
3. DRAM Type
5: 16Banks
7. Interface (Vdd, Vddq)
4.Density
5. Bit Organization
04: x 4
08: x 8
14
C: Commercial Temp. (0°C ~ 85°C) &
Normal Power
8.Revision
4G: 4Gb
8G: 8Gb
DDR4 SDRAM Module Ordering Information
B: FBGA (Halogen-free & Lead-free, Flip Chip)
M: FBGA (Halogen-free & Lead-free, DDP)
10.Temp & Power
W: POD (1.2V, 1.2V)
A: DDR4 SDRAM
9. Package Type
M: 1st Gen.
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
H: 9th Gen.
11.Speed
PB: DDR4-2133
(1066MHz @ CL=15, tRCD=15, tRP=15)
RC: DDR4-2400
(1200MHz @ CL=17, tRCD=17, tRP=17)
1H 2016
samsung.com/dram
High
Performance
Interface
UFS 2.0
Bandwidth
Density
Flash Die
Part Number
Seq R/W
MB/s
Random R/W
IOPS
6Gb/s per lane
Up to 2 lanes
256GB
256Gb*8
KLUEG8U1EM-B0B10**
850/260
50K / 30K
128GB
128Gb*8
KLUDG8J1CB-B0B10**
64GB
128Gb*4
KLUCG4J1CB-B0B10**
32GB
64Gb*4
KLUBG4G1CE-B0B10**
16GB
64Gb*2
KLUAG2G1CE-B0B10**
6Gb/s per lane
1 lane only
eMMC v5.1
Mainstream
400 MB/s
eMMC v5.0
eMMC v5.1
Low End
400 MB/s
eMMC v5.0
128GB
128Gb*8
KLMDG8JENB-B0410**
64GB
128Gb*4
KLMCG4JENB-B0410**
32GB
128Gb*2
KLMBG2JENB-B0410**
64GB
64Gb*8
KLMCG8GEND-B0310**
32GB
64Gb*4
KLMBG4GEND-B0310**
460/160
mm Pkg Size (X,Y,Z)
Status
11.5 x 13.0 x 1.2
Sampling
11.5 x 13.0 x 1.0
MP
20K / 14K
440/80
18K / 10K
310/140
14K / 14K
11.5 x 13.0 x 1.0
310/70
13K / 14K
11.5 x 13.0 x 0.8
250/100
6.5K / 13K
6.5K / 12K
128GB
64Gb*16
KLMDGAWEBD-B0310**
64GB
64Gb*8
KLMCG8WEBD-B0310**
250/45
32GB
64Gb*4
KLMBG4WEBD-B0310**
16GB
128Gb*1
KLMAG1JENB-B0410**
285/40
8K / 10K
8GB
64Gb*1
KLM8G1GEME-B0410**
185/40
5.2K / 2.5K
260/46
11.5 x 13.0 x 1.0
FLASH - SSD
Application
MP
11.5 x 13.0 x 1.4
6K / 5K
16GB
64Gb*2
KLMAG2GEND-B0310**
230/50
6.5K / 6K
8GB
64Gb*1
KLM8G1GEND-B0310**
160/25
6.5K / 2.5K
4GB
32Gb*1
KLM4G1FEPD-B0310**
120/20
5K / 0.5K
16GB
64Gb*2
KLMAG2WEPD-B0310**
150/12
5K / 1.2K
8GB
64Gb*1
KLM8G1WEPD-B0310**
140/8
5K / 0.6K
11.5 x 13.0 x 1.0
11.5 x 13.0 x 0.8
11.5 x 13.0 x 0.8
MP
11.0 x 10.0 x 0.8
11.5 x 13.0 x 0.8
MMC5.1 is backwards compatible with 5.0 & 4.5
*Denotes bucket code for latest firmware patch
samsung.com/flash
1H 2016
Mainstream eMMC,
High-Performance eMMC & UFS
15
SOLID STATE DRIVES (SSD)
Drive Type
Power-loss
Protection
Form Factor
Interface
Connector
SATA 3.0 @ 6 Gbit/s
Client PC/
Embedded
No
M.2 22 x 80 mm
Product
Family
Capacity
(GB)
Part Number
256
MZNLN256HMHQ-00000
512
MZNLN512HMJP-00000
1024
MZNLN1T0HMLH-00000
128
MZVLV128HCGR-00000
256
MZVLV256HCHP-00000
512
MZVLV512HCJH-00000
240
MZ7LM240HMHQ-00005
480
MZ7LM480HMHQ-00005
960
MZ7LM960HMJP-00005
1920
MZ7LM1T9HMJP-00005
3840
MZ7LM3T8HMLP-00005
120
MZ7KM120HAFD-00005
240
MZ7KM240HAGR-00005
480
MZ7KM480HAHP-00005
960
MZ7KM960HAHP-00005
1920
MZ7KM1T9HAJM-00005
100
MZ7KM120HAFD-00005
200
MZ7KM240HAGR-00005
400
MZ7KM480HAHP-00005
800
MZ7KM960HAHP-00005
1600
MZ7KM1T9HAJM-00005
480
MZQLW480HMHQ-00003
960
MZQLW960HMJP-00003
1920
MZQLW1T9HMJP-00003
3840
MZQLW3T8HMLP-00003
960
MZQKW960HMJP-00003
1920
MZQKW1T9HMJP-00003
3840
MZQKW3T8HMLH-00003
800
MZQKW960HMJP-00003
1600
MZQKW1T9HMJP-00003
3200
MZQKW3T8HMLH-00003
480
MZ1LW480HMHQ-00003
960
MZ1LW960HMJP-00003
1920
MZ1LW1T9HMLS-00003
3.6 DWPD
for 5 Years
960
MZ1KW960HMJP-00003
1920
MZ1KW1T9HMJP-00003
10 DWPD
for 5 Years
800
MZ1KW960HMJP-00003
1600
MZ1KW1T9HMJP-00003
PM871a
M.2
PCIe Gen 3 x4 @
32Gbit/s (NVMe)
PC Workload
PM951
PM863a
SATA 3.0 @ 6 Gbit/s
Write
Endurance
0.8 DWPD
for 5 Years
3.6 DWPD
for 5 Years
SFF-8223
SM863
10 DWPD
for 5 Years
2.5" 7mmT
Datacenter
Yes
PM963
U.2 (SFF-8639)
0.8 DWPD
for 5 Years
3.6 DWPD
for 5 Years
SM963
10 DWPD
for 5 Years
PCIe Gen 3x4 @
32Gbit/s (NVMe)
PM963
M.2 22 x 110 mm
M.2
0.8 DWPD
for 5 Years
SM963
16
Solid State Drives
1H 2016
samsung.com/flash
Samsung has a portfolio of eMCP products for a variety of devices, such as mobile phones
and tablets. The following illustration shows Samsung’s lineup of eMCP memory solutions,
which can be deployed in almost any application.
Samsung eMCP product suite with different densities and types
of Mobile DRAM and eMMC
MCPs
eMCP = eMMC + LPDDR3
128GB
64GB
RO M
32GB
16GB
8GB
4GB
4Gb
6Gb
8Gb
12Gb
16Gb
24Gb
32Gb
R AM
samsung.com/mcp
1H 2016
Multi-Chip Packages
17
eMCP: eMMC + LPDDR3
Memory
eMMC Density
4GB
8GB
16GB
eMMC & MDRAM
32GB
64GB
128GB
DRAM Density/Organization
Voltage (eMMC-DRAM)
Package
4Gb (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
6Gb (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
8Gb (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
6Gb*2 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
8Gb (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
6Gb*2 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
8Gb*2 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
6Gb*4 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
8Gb*2 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
6Gb*4 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
8Gb*4 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
6Gb*4 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
8Gb*4 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
8Gb*4 (x32)
3.3V/1.8V - 1.8V/1.2V
221FBGA 11.5 x 13mm
DRAM Density/Organization
Voltage (eMMC-DRAM)
Package
ePoP: eMMC + LPDDR3
Memory
eMMC Density
4GB
eMMC & MDRAM
4GB
8GB
18
Multi-Chip Packages
4Gb (x32)
3.3V/1.8V - 1.8V/1.2V
168FBGA 12x12mm
6Gb (x32)
3.3V/1.8V - 1.8V/1.2V
168FBGA 12x12mm
4Gb (x32)
3.3V/1.8V - 1.8V/1.2V
136FBGA 10x10mm
6Gb (x32)
3.3V/1.8V - 1.8V/1.2V
136FBGA 10x10mm
8Gb (x32)
3.3V/1.8V - 1.8V/1.2V
136FBGA 10x10mm
1H 2016
samsung.com/mcp
Solid State Drives (SSDs)
LEGACY
PC CLIENT
Datacenter
HIGH
PERFORMANCE
PC CLIENT
LEGACY
DATACENTER
SERIES
HIGH
PERFORMANCE
DATACENTER
SERIES
Enterprise
ENTERPRISE
STORAGE SERIES
High Availability
Primary Storage
EXTREME
PERFORMANCE
SERIES
Cache
Applications
PM871a
PM951
PM863a
PM963
PM1633/PM1633a
PM1725a
SATA 3.0
@ 6 Gbit/s
PCIe Gen 3 x4
@ 32Gbit/s (NVMe)
SATA 3.0
@ 6 Gbit/s
PCIe Gen 3 x4
@ 32Gbit/s (NVMe)
SAS 3.0
@ 12 Gbit/s
PCIe Gen 3 x8
@ 64Gbit/s (NVMe)
M.2
M.2
2.5"
M.2
2.5"
Add-in Card
(HHHL)
Capacity (GB)
256/512/1024
128/256/512
240/480/960/
1920/3840
480/960/1920
480/960/1920/
3840/7680/15360
1600/3200/6400
Endurance (up to)
Client workload
Client workload
0.8 DWPD
for 5 Years
0.8 DWPD
for 5 Years
1-3 DWPD
for 5 Years
5-10 DWPD
for 5 Years
Power Consumption
(Active)
100 mW
4.5 W
4.1 W
7W
12 W
25 W
Power Consumption
(Idle)
2 mW (DevSlp)
2.5 mW (L1.2)
1.3 W
1.9 W
4W
7W
Random Reads (up to)
97,000 IOPS
270,000 IOPS
99,000 IOPS
240,000 IOPS
200,000 IOPS
1,000,000 IOPS
Random Writes (up to)
88,000 IOPS
150,000 IOPS
18,000 IOPS
19,000 IOPS
37,000 IOPS
140,000 IOPS
Sequential Reads (up to)
530 MB/s
1,820 MB/s
540 MB/s
1,000 MB/s
1,400 MB/s
6,000 MB/s
Sequential Writes (up to)
515 MB/s
600 MB/s
480 MB/s
870 MB/s
930 MB/s
1,900 MB/s
1.5 Million Hours
1.5 Million Hours
2.0 Million Hours
2.0 Million Hours
2.0 Million Hours
2.0 Million Hours
1 in 1015
1 in 1015
1 in 1017
1 in 1017
1 in 1017
1 in 1017
22 x 80 x 2.38 mm
22 x 80 x 3.7 mm
100 x 70 x 7mm
22 x 110 x 5.48 mm
100 x 70 x 15 mm
168 x 70 x 19 mm
(HHHL)
9.0 g
8.0 g
60 g
15 g
140 g
320 g
Host Interface
Form Factor
MTBF
Uncorrectable Bit Error
Rate (UBER)
Physical Dimensions
Weight
Which SSD is right for you?
[email protected]
For more information, email:
samsung.com/flash-ssd
1H 2016
Solid State Drives
19
STORAGE
Client PC / Embedded
SOLID STATE DRIVES (SSD)
Drive Type
Power-loss
Protection
Form Factor
Interface
Connector
SATA 3.0 @ 6 Gbit/s
Client PC/
Embedded
No
M.2 22 x 80 mm
Product
Family
Capacity
(GB)
Part Number
256
MZNLN256HMHQ-00000
512
MZNLN512HMJP-00000
1024
MZNLN1T0HMLH-00000
128
MZVLV128HCGR-00000
256
MZVLV256HCHP-00000
512
MZVLV512HCJH-00000
240
MZ7LM240HMHQ-00005
480
MZ7LM480HMHQ-00005
960
MZ7LM960HMJP-00005
1920
MZ7LM1T9HMJP-00005
3840
MZ7LM3T8HMLP-00005
120
MZ7KM120HAFD-00005
240
MZ7KM240HAGR-00005
480
MZ7KM480HAHP-00005
960
MZ7KM960HAHP-00005
1920
MZ7KM1T9HAJM-00005
100
MZ7KM120HAFD-00005
200
MZ7KM240HAGR-00005
400
MZ7KM480HAHP-00005
800
MZ7KM960HAHP-00005
1600
MZ7KM1T9HAJM-00005
480
MZQLW480HMHQ-00003
960
MZQLW960HMJP-00003
1920
MZQLW1T9HMJP-00003
3840
MZQLW3T8HMLP-00003
960
MZQKW960HMJP-00003
1920
MZQKW1T9HMJP-00003
3840
MZQKW3T8HMLH-00003
800
MZQKW960HMJP-00003
1600
MZQKW1T9HMJP-00003
3200
MZQKW3T8HMLH-00003
480
MZ1LW480HMHQ-00003
960
MZ1LW960HMJP-00003
1920
MZ1LW1T9HMLS-00003
3.6 DWPD
for 5 Years
960
MZ1KW960HMJP-00003
1920
MZ1KW1T9HMJP-00003
10 DWPD
for 5 Years
800
MZ1KW960HMJP-00003
1600
MZ1KW1T9HMJP-00003
PM871a
M.2
PCIe Gen 3 x4 @
32Gbit/s (NVMe)
PC Workload
PM951
PM863a
SATA 3.0 @ 6 Gbit/s
Write
Endurance
0.8 DWPD
for 5 Years
3.6 DWPD
for 5 Years
SFF-8223
SM863
10 DWPD
for 5 Years
2.5" 7mmT
Datacenter
Yes
PM963
U.2 (SFF-8639)
0.8 DWPD
for 5 Years
3.6 DWPD
for 5 Years
SM963
PCIe Gen 3x4 @
32Gbit/s (NVMe)
10 DWPD
for 5 Years
PM963
M.2 22 x 110 mm
M.2
0.8 DWPD
for 5 Years
SM963
20
Solid State Drives
1H 2016
samsung.com/flash-ssd
SOLID STATE DRIVES (SSD) continued
Drive Type
Power-loss
Protection
Form Factor
Interface
Connector
Product
Family
Write
Endurance
Capacity
(GB)
Part Number
480
MZILS480HCGR-00003
1 DWPD
for 5 Years
960
MZILS960HCHP-00003
1920
MZILS1T9HCHP-00003
3840
MZILS3T8HCJM-00003
400
MZILS480HCGR-00003
800
MZILS960HCHP-00003
1600
MZILS1T9HCHP-00003
3200
MZILS3T8HCJM-00003
7680
MZILS7T6HMLS-00003
15360
MZILS15THMLS-00003
6400
MZILS7T6HMLS-00003
12800
MZILS15THMLS-00003
PM1633
SAS 3.0 @ 12 Gbit/s
3 DWPD
for 5 Years
SFF-8680
2.5" 15mmT
Enterprise
1 DWPD
for 5 Years
Yes
PM1633a
3 DWPD
for 5 Years
PCIe Gen 3x4 @
32Gbit/s (NVMe)
U.2 (SFF-8639)
PM1725a
PCIe Gen 3 x8 @
64Gbit/s (NVMe)
Edge Connector
MZWLL800HEHP-00003
MZWLL1T6HEHP-00003
3200
MZWLL3T2HMJP-00003
6400
MZWLL6T4HMLS-00003
1600
MZPLL1T6HEHP-00003
3200
MZPLL3T2HMJP-00003
6400
MZPLL6T4HMLT-00003
STORAGE
Add-in Card (HHHL)
5 DWPD
for 5 Years
800
1600
samsung.com/flash-ssd
samsung.com/flash-ssd
1H 2016
Solid State Drives
21
Public Information Display (PID) Product Classification
Super Narrow Bezel (SNB)/
Ultra Narrow Bezel (UNB)
» Video Wall
» SNB: 5.9mm A-to-A
» UNB: 3.9mm A-to-A
Indoor PID
» Narrow Bezel
» 40"/46"/55"/75"
» 700 nits Brightness
E-Board PID
» Landscape Orientation
» 55"/70"/82" Edge LED
» AGAR Surface Treatment
Outdoor PID
» High Brightness
» Full High Definition
» 110°C Clearing Point
Why PID instead of TV?
COMMERCIAL (PID)
CONSUMER (TV)
WARRANTY
18 months to 2 years
90 days to 1 year
RELIABILITY
Public environments
20+ hours daily duty cycle
Variety of temperatures & location
5-8 hour daily duty cycle
Designed for in-home use in controlled environment
In-home living room
PRODUCTION LIFECYCLE
24-36 months
12-15 months
PICTURE QUALITY
Designed to resist image retention
LCD backlight covers a wider color spectrum necessary for
PC source integration, giving better picture quality
AGAR coating for public viewing
120Hz / 240Hz for full-motion video
Designed for TV signals
Gloss surface treatment
LOCATION
Most models portrait capable
Can only be oriented in landscape mode
Product Segmentation
HEAVY USE
SNB / UNB
Indoor PID
E-Board PID
Outdoor PID
LIGHT USE
Professional
Indoor Events
Billboard
• Control Room
• Simulation
• Scoreboard
• Sports Broadcasting
• Dynamic Signage
Entertainment
Transportation
Communication
• Casino
• Theatre
• Menu
• Airport
• Train/Bus Station
• Conference Room
Commercial
Education
Hospitality
• Kiosk
• Conference Systems
• Interactive FPD
• Hotel Signage
Commercial
Education
Hospitality
• Kiosk
• Conference Systems
• Interactive FPD
• Hotel Signage
Product Segmentation
Type
ENB / UNB /
SNB
Indoor PID
Class
Warranty
Ultra / Super Narrow Bezel
2 years
Bezel
Suggested
Run Time
Brightness
Usage
Applications
Value Tier
20+ hours
500-700 nits
Heavy
Video Walls
Premium commercial range
Indoor Commercial Panels
2 years
1.9mm - 5.9mm
A-to-A
Narrow
20+ hours
600/700 nits
Medium
Semi-Outdoor
Mid-price range
E-Board
Value, Large Format
18 months
Normal
12 hours
450 nits
Daily
Indoor, e-Board
High-value commercial range
Outdoor PID
High Bright, Wide Temp
2 years
Normal
20+ hours
2500-5000 nits
Heavy
Outdoor
Premium commercial range
Specialty
Value, Large Format
2 years
Narrow
20+ hours
500/ 1500 nits
Medium
specialty
22
DID Panel Lineup, Tablets & Monitors
1H 2016
samsungdisplay.com
SAMSUNG DIGITAL INFORMATION DISPLAY (DID) PANEL LINEUP
SNB /
UNB /
ENB
Model
Size
Model
Bezel
Resolution
Brightness
(typical)
Contrast
Ratio
Response
Time
Frequency
MP*
Comment
LTI460HN01
(EOL '15.4Q)
46"
FHD
Super narrow D-LED
700 nits
3,000:1
8ms
60Hz
Now
5.9mm Active to Active, LED
LTI460HN09
46"
FHD
Super narrow D-LED
500 nits
3,000:1
8ms
60Hz
Now
5.9mm Active to Active, LED
LTI460HN11
46"
FHD
Ultra narrow
D-LED
500 nits
3,000:1
8ms
60Hz
Now
3.9mm Active to Active, LED
LTI460HN12
46"
FHD
Ultra narrow
D-LED
700 nits
3,000:1
8ms
60Hz
Now
3.9mm Active to Active, LED
55"
FHD
Super narrow D-LED
700 nits
3,000:1
8ms
60Hz
Now
5.9mm Active to Active, LED
55"
FHD
Super narrow D-LED
500 nits
3,000:1
8ms
60Hz
Now
5.7mm Active to Active, LED
LTI550HN11-V
55"
FHD
Ultra narrow
D-LED
500 nits
3,000:1
8ms
60Hz
Now
3.9mm Active to Active, LED
LTI550HN12-V
55"
FHD
Ultra narrow
D-LED
700 nits
3,000:1
8ms
60Hz
Now
3.9mm Active to Active, LED
55"
FHD
Ultra narrow
D-LED
700 nits
3,000:1
8ms
60Hz
Now
3.9mm Active to Active, LED
55"
FHD
Extreme
narrow
D-LED
700 nits
3,000:1
8ms
60Hz
Now
1.94mm Active to Active, LED
LTI400HA10
40"
FHD
Narrow
eLED
700 nits
3,000:1
8ms
60Hz
Now
eLED, Landscape / Portrait
LTI460HN08
46"
FHD
Narrow
eLED
700 nits
4,000:1
8ms
60Hz
Now
eLED, Landscape / Portrait
LTI480HN01
48"
FHD
Narrow
Slim eLED 700 nits
4,000:1
8ms
60Hz
16.Q4
Slim eLED,Landscape / Portrait
LTI480HN02
48"
FHD
Narrow
Slim eLED 500 nits
4,000:1
8ms
60Hz
16.Q4
Slim eLED, Landscape / Portrait
LTI550HN06
55"
FHD
Narrow
eLED
700 nits
4,000:1
8ms
60Hz
Now
eLED, Landscape / Portrait
LTI550HN07
55"
FHD
Narrow
eLED
450 nits
4,000:1
8ms
60Hz
Now
E-Board; Landscape/Portrait
LTI550FN01
55"
UHD
Narrow
Slim eLED 500 nits
4,000:1
8ms
60Hz
16. Q3
Slim eLED, Landscape / Portrait
LTI750HF02-0
75"
FHD
Normal
D-LED
400 nits
3,500:1
8ms
120Hz
Now
Landscape / Portrait
LTI750FJ01
75"
UHD
Normal
D-LED
500 nits
5,000:1
8ms
120Hz
Now
Landscape / Portrait
LTI750FN01
75"
UHD
Normal
eLED
600 nits
4,000:1
8ms
60Hz
16. Q2
eLED Landscape / Portrait
LTI980FN01
98"
UHD
Normal
eLED
500 nits
4,000:1
8ms
60Hz
16. Q2
eLED Landscape / Portrait
LTI700HN02
70"
FHD
Normal
eLED
350 nits
4,000:1
8ms
60Hz
16. Q2
E-Board; Landscape mode only
LTI750FN02
75"
UHD
Normal
eLED
350 nits
4,000:1
8ms
60Hz
16. Q3
E-Board; Landscape mode only
LTI460HZ01
46"
FHD
Narrow
D-LED
5,000 nits
4,000:1
8ms
60Hz
Now
High Bright, Hi Temp LC, 1/4λ Pol.
LTI460HF01-V
46"
FHD
Narrow
D-LED
2,500 nits
3,000:1
8ms
120Hz
Now
High Bright, Hi Temp LC, 1/4λ Pol.
LTH550HF04-V 55"
FHD
Narrow
D-LED
2,500 nits
3,000:1
8ms
120Hz
Now
High Bright, Hi Temp LC, 1/4λ Pol.
LTI750HF01-V
75"
FHD
Narrow
D-LED
3,500 nits
3,000:1
8ms
120Hz
Now
High Bright, Hi Temp LC, 1/4λ Pol.
LTI290LN01
29"
Half FHD
Narrow
eLED
500 nits
4,000:1
16ms
60Hz
16. Q2
Stretched, 40"/2, Hi Temp LC
LTI290LN02
29"
Half FHD
Narrow
eLED
700 nits
4,000:1
16ms
60Hz
16. Q3
Stretched, 40"/2, Hi Temp LC
LTI370LN01
37"
Half FHD
Narrow
eLED
700 nits
4,000:1
16ms
60Hz
16. Q2
Stretched, 46"/2, Hi Temp LC
LTI370LN02
37"
Half FHD
Narrow
eLED
1500 nits
4,000:1
16ms
60Hz
16. Q3
Stretched, 46"/2, Hi Temp LC
LTI550HN01
(EOL '15.4Q)
LTI550HN08
(EOL '16.2Q)
LTI550HN13-V
(Broadcast)
LTI550HN14-V
(MP '16.2Q)
Indoor PID
E-Board
Outdoor
Specialty
samsungdisplay.com
Backlight
1H 2016
DID Panel Lineup
DISPLAYS
Category
23
Contacts
Feel free to contact your local distributor or sales representative with any Samsung sales inquiries.
Adelsa |
www.adetronics.com.mx
PRODUCTS
ADDRESS
Memory, SLSI, LCD
MEXICO
ATMI Sales |
MAIN PHONE
Hacienda Corralejo #80,
Bosque de Echegaray,
Naucalpan, Mexico 53310
FAX
52-555-560-5002
GUADALAJARA OFFICE
52-333-122-3054
MONTERREY OFFICE
52-818-214-0011
CD. JUAREZ OFFICE
52-656-613-3517
REYNOSA OFFICE
52-899-922-5540
www.atmisales.com
PRODUCTS
ADDRESS
Memory, LCD
OREGON
WASHINGTON
Bear VAI Technology |
MAIN PHONE
FAX
4900 S.W. Griffith Drive, Suite 253
Beaverton, OR 97005
1-800-898-2446,
503-643-8307
503-643-4364
8581 154th Avenue NE
Redmond WA 98052
425-869-7636
425-869-9841
www.bearvai.com
PRODUCTS
ADRRESS
MAIN PHONE
FAX
Memory, SLSI, LCD
MAIN OFFICE BRECKSVILLE, OHIO
6910 Treeline Drive, Unit H
Brecksville, OH 44141
440-526-1991
440-526-5426
MAIN OFFICE INDIANA
11451 Overlook Drive
Fishers, IN 46037
440-832-7637
317-845-8650
MICHIGAN
17426 Williow Ridge Drive
Northville, MI 48168
440-526-1991
440-526-5426
Core Sales, Inc. |
www.coresales.com
PRODUCTS
ADDRESS
MAIN PHONE
Memory, SLSI, LCD
901 Warrenville Road, Suite 211, Lisle, IL 60532
847-843-8888
Crestone Technology Group |
FAX
www.crestonegroup.com
PRODUCTS
ADDRESS
Memory, SLSI, LCD
UTAH OFFICE
1578 Trailside Road
Farmington, UT 84025
801-245-9752
COLORADO
7108 S. Alton Way, Building L, Suite A
Centennial, CO 80112
303-280-7202
720-482-2220
MAIN PHONE
FAX
952-851-7909
952-851-7907
Customer 1st |
MAIN PHONE
FAX
www.customer1st.com
PRODUCTS
ADDRESS
Memory, SLSI, LCD
MINNESOTA
2950 Metro Drive, Suite 101
Bloomington, MN 55425
KANSAS
2111 E. Crossroad Lane, #202
Olathe, KS 66062
For all product information please visit: www.samsung.com/us/samsungsemiconductor
24
DID Panel Lineup, Tablets & Monitors
1H 2016
samsung.com/semiconductor/sales-network
InTELaTECH |
www.intelatech.com
PRODUCTS
ADDRESS
MAIN PHONE
FAX
Memory, SLSI
5225 Orbitor Drive, Suite 2, Mississauga, ONT Canada L4W 4Y8
905-629-0082
905-624-6909
905-629-1795
905-629-8910
21 Concourse Gate, Suite 12, Ottawa, ONT Canada K2E 7S4
905-629-0082
613-221-9160
I-Squared Incorporated |
www.isquared.com
PRODUCTS
ADDRESS
MAIN PHONE
FAX
Memory, SLSI, LCD
2635 N. 1st Street, Suite 128, San Jose, CA 95134
408-988-3400
408-988-2079
1250 B Street, Petaluma, CA 94952
707-773-3108
Neptune Electronics (necco) |
www.neccoelect.com
PRODUCTS
ADDRESS
MAIN PHONE
FAX
Memory, SLSI, LCD
11 Oval Drive, Suite 169, Islandia, NY 11749
631-234-2525
631-234-2707
New Elpis, Inc. |
www.newelpis.com
PRODUCTS
ADDRESS
MAIN PHONE
FAX
LCD
165 Dundas St. W., Suite 702, Mississauga, ONT, Canada L4Z 2H6
905-275-3516
905-275-4109
New Tech Solutions
PRODUCTS
ADDRESS
MAIN PHONE
FAX
Memory, SLSI, LCD
26 Ray Avenue, Burlington, MA 01803
781-229-8888
781-229-1614
Rep One Associates, Inc. |
www.repone.com
PRODUCTS
ADDRESS
MAIN PHONE
FAX
Memory, SLSI, LCD
ALABAMA
303 Williams Avenue, Suite 1011
Huntsville, AL 35801
256-539-7371
256-533-4509
GEORGIA
3000 Langford Road, Bldg 300
Norcross, GA 30071
770-209-9242
678-591-6753
770-209-9245
Tech Coast Sales |
www.tc-sales.com
PRODUCTS
ADDRESS
MAIN PHONE
EMAIL
Memory, SLSI, LCD
23121 Verdugo Drive, Suite 101, Laguna Hills, CA 92653
949-305-6869
[email protected]
West Associates |
www.westassociates.com
ADDRESS
MAIN PHONE
FAX
Memory, SLSI, LCD
AUSTIN /
SAN ANTONIO
4100 Duval Road, Building 1, Suite 102,
Austin, TX 78759
512-343-1199
512-343-1922
DALLAS /
OKLAHOMA /
ARKANSAS
2745 Dallas Parkway, Suite 460,
Plano, TX 75093
972-680-2800
972-699-0330
HOUSTON / VALLEY /
LOUISIANA
24624 Interstate 45 North, Suite 200,
Spring, TX 77386
512-343-1199
512-343-1922
CONTACTS
PRODUCTS
samsung.com/semiconductor/sales-network
1H 2016
Contacts
25
Notes
26
1H 2016
samsung.com/semiconductor/sales-network
CONTACTS
Notes
samsung.com/semiconductor/sales-network
1H 2016
27
Samsung Semiconductor, Inc.
3655 North First Street
San Jose, CA 95134-1713
samsung.com/us/oem-solutions
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible
errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specifications
with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes. This publication does not convey to
a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all
liability, including without limitation any consequential or incidental damages.
Copyright 2016. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. Ultrabooks is a trademark of Intel Corporation. All other names and
brands may be claimed as the property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice.
BR-16-ALL-001 | Printed 3/16