UNISONIC TECHNOLOGIES CO., LTD Preliminary UFB3207H Power MOSFET 180A, 75V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC UFB3207H is a power mosfet, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UFB3207H is suitable for hard switched and high frequency circuits, etc. 1 FEATURES TO-247 * RDS(ON) < 4.5mΩ @ VGS=10V, ID=75A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UFB3207HL-TA3-T UFB3207HG-TA3-T UFB3207HL-T47-T UFB3207HG-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source UFB3207HL-TA3-T Package TO-220 TO-247 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, T47: TO-247 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R208-055.b UFB3207H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 75 V ±20 V TC=25°C 180 (Note 2) Continuous A ID Drain Current VGS@10V TC=100°C 130 (Note 2) 720 A Pulsed (Note 3) IDM Single Pulse Avalanche Energy (Note 4) EAS 910 mJ TO-220 330 W Power Dissipation TC=25°C PD TO-247 450 W Peak Diode Recovery (Note 5) dv/dt 5.8 V/ns Junction Temperature TJ -55~+175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 3. Repetitive rating; pulse width limited by max. junction temperature. 4. Limited by TJmax, starting TJ=25°C, L=0.33mH, RG=25Ω, IAS=75A, VGS=10V. Part not recommended for use above this value. 5. ISD≤75A, di/dt≤500A/µs, VDD≤V(BR)DSS, TJ≤ 175°C. SYMBOL VDSS VGSS THERMAL DATA PARAMETER SYMBOL TO-220 Junction to Ambient θJA TO-247 TO-220 Junction-to-Case θJC TO-247 Notes: 1. When mounted on 1" square PCB (FR-4 or G-10 Material). 2. Rθ is measured at TJ approximately 90°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62 50 0.45 0.3 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R208-055.b UFB3207H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS V(BR)DSS VGS=0V, ID=250µA Reference to 25°C, ID=1mA ∆V(BR)DSS/∆TJ (Note 2) VDS=75V,VGS=0V IDSS VDS=75V, VGS=0V, TJ=125°C VGS=+20V IGSS VGS=-20V RG f=1.0MHz, open drain Gate Resistance ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=75A (Note 1) Forward Transconductance gFS VDS=50V, ID =75A DYNAMIC PARAMETERS Input Capacitance CISS VDS=50V, VGS=0 V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=60V, ID=75A, Gate Source Charge QGS (Note 1) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=48V, RG=2.6Ω, ID=75A, Turn-ON Rise Time tR VGS=10V (Note 1) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Drain-Source Diode Forward Voltage ISM (Note 2) Drain-Source Diode Forward Voltage VSD IS=75A, VGS=0V, TJ=25°C (Note 1) MIN TYP MAX 75 UNIT V 0.069 V/°C 20 250 200 -200 µA µA nA nA Ω 4.0 4.5 V mΩ S 1.2 2.0 3.6 150 7600 710 390 180 48 68 29 120 68 74 pF pF pF 260 180 (Note 2) nC nC nC ns ns ns ns A 720 A 1.3 V Notes: 1. Pulse width ≤ 400µs; duty cycle ≤ 2%. 2. Repetitive rating; pulse width limited by max. junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R208-055.b UFB3207H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R208-055.b UFB3207H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R208-055.b UFB3207H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R208-055.b