Analog Power AM190N10-04B N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = 10V 10.5 @ VGS = 5.5V ID (A) 190a Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 a TC=25°C ID 190 Continuous Drain Current IDM Pulsed Drain Current b 750 a TC=25°C IS 190 Continuous Source Current (Diode Conduction) T =25°C P Power Dissipation 300 C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case c Symbol Maximum RθJA 62.5 RθJC 0.5 Units V A A W °C Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: DS_AM190N10-04B_1A Analog Power AM190N10-04B Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a Diode Forward Voltage a gfs VSD Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 5.5 V, ID = 16 A VDS = 15 V, ID = 20 A IS = 95 A, VGS = 0 V Min Typ Max 1 ±100 1 10 240 Unit V nA uA A 9 10.5 19 1 mΩ S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 50 V, VGS = 5.5 V, ID = 20 A VDS = 50 V, RL = 2.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz 140 50 33 38 25 283 60 12354 516 422 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM190N10-04B_1A Analog Power AM190N10-04B Typical Electrical Characteristics 0.04 30 0.03 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.02 3V 3.5V 0.01 20 10 4V,4.5V,5V,5.5V,6V,8V,10V 0 0 0 10 20 0 30 ID-Drain Current (A) 2 3 4 2. Transfer Characteristics 0.08 100 TJ = 25°C ID = 20A TJ = 25°C IS - Source Current (A) 0.06 0.04 0.02 0 10 1 0.1 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 30 14000 F = 1MHz Ciss 10V,8V,6V,5.5V, 5V,4.5V,4V 12000 3.5V 20 Capacitance (pf) ID - Drain Current (A) 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current RDS(on) - On-Resistance(Ω) 1 3V 10 10000 8000 6000 4000 2000 0 Coss Crss 0 0 0.1 0.2 0.3 0.4 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM190N10-04B_1A Analog Power AM190N10-04B Typical Electrical Characteristics 2.5 VDS = 50V ID = 20A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 2 1.5 1 0.5 0 50 100 150 200 250 300 -50 -25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 10000 PEAK TRANSIENT POWER (W) 800 1000 10 uS 100 uS ID Current (A) 25 1 mS 100 10 mS 100 mS 10 1 SEC 10 SEC 1 100 SEC DC 1 0.1 Idm limit Limited by RDS 700 600 500 400 300 200 100 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 62.5 °C /W 0.1 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM190N10-04B_1A Analog Power AM190N10-04B Package Information © Preliminary 5 Publication Order Number: DS_AM190N10-04B_1A