RU40191S

RU40191S
N-Channel Advanced Power MOSFET
Features
Pin Description
• 40V/190A,
RDS (ON) =1.8mΩ(Typ.)@VGS=10V
D
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
G
S
• Lead Free and Green Devices Available (RoHS Compliant)
TO263
D
Applications
• DC-DC Converters and Off-line UPS
• Switching Applications
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
190
A
TC=25°C
760
A
TC=25°C
190
TC=100°C
146
TC=25°C
300
TC=100°C
150
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
①
②
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
A
W
RJC
Thermal Resistance-Junction to Case
0.5
°C/W
RJA
Thermal Resistance-Junction to Ambient
62.5
°C/W
812
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
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RU40191S
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU40191S
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
VGS(th)
IGSS
④
RDS(ON)
40
V
VDS=40V, VGS=0V
1
TJ=125°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance VGS=10V, IDS=75A
30
1
1.8
µA
3
V
±100
nA
3
mΩ
1.3
V
Diode Characteristics
④
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=75A, VGS=0V
ISD=75A, dlSD/dt=100A/µs
40
ns
52
nC
1.2
Ω
⑤
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
VGS=0V,
VDS=20V,
Frequency=1.0MHz
Reverse Transfer Capacitance
480
td(ON)
Turn-on Delay Time
19
tr
Turn-on Rise Time
td(OFF)
tf
Turn-off Delay Time
VDD=20V,IDS=75A,
VGEN=10V,RG=2.5Ω
Turn-off Fall Time
4800
950
96
70
pF
ns
50
⑤
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDS=32V, VGS=10V,
IDS=75A
120
34
nC
46
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
③Limited by TJmax, IAS =57A, VDD = 32V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
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RU40191S
Ordering and Marking Information
Device
Marking
Package
RU40191S
RU40191S
TO263
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
Packaging Quantity Reel Size Tape width
Tube
3
50
-
-
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RU40191S
Typical Characteristics
Power Dissipation
350
Drain Current
250
300
ID - Drain Current (A)
PD - Power (W)
200
250
150
200
150
Limited By Package
100
100
50
50
0
VGS=10V
0
0
25
50
75
100
125
150
175
25
50
TJ - Junction Temperature (°C)
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
ID - Drain Current (A)
100
10µs
100µs
1ms
10ms
DC
10
TC=25°C
1
0.1
1
10
100
125
150
175
TJ - Junction Temperature (°C)
Safe Operation Area
1000
75
100
Drain Current
6
IDS=75A
5
3
2
0
0
1000
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
Single Pulse
RθJC=0.5°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
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RU40191S
Typical Characteristics
Output Characteristics
VGS=8,9,10V
250
5V
200
150
4V
100
3V
50
0
0
1
2
3
Drain-Source On Resistance
5
4
5
RDS(ON) - On Resistance (mΩ)
ID - Drain Current (A)
300
4
3
VGS=10V
2
1
0
0
30
60
VDS - Drain-Source Voltage (V)
2.0
Drain-Source On Resistance
VGS=10V
ID=75A
1.0
0.5
TJ=25°C
Rds(on)=1.8mΩ
0.0
-25
0
25
50
75
100
125
150
TJ=25°C
1.00
0.10
0.01
0.2
175
0.4
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
5000
Ciss
3000
2000
Coss
1000
Crss
10
100
1
1.2
10
VDS=32V
IDS=75A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
0.8
Gate Charge
Frequency=1.0MHz
4000
0.6
VSD - Source-Drain Voltage (V)
Capacitance
6000
1
180
TJ=175°C
10.00
TJ - Junction Temperature (°C)
0
150
100.00
1.5
-50
120
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
2.5
90
ID - Drain Current (A)
50
100
150
QG - Gate Charge (nC)
5
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RU40191S
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
6
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RU40191S
Package Information
TO263
θ1
θ1
θ2
θ
θ2
SYMBOL
A
A1
A2
b
b1
c
c1
D
E
e
H
MM
MIN
4.40
0.00
2.59
0.76
1.22
0.33
1.22
8.60
9.95
14.70
NOM
4.55
0.10
2.69
*
*
*
*
*
*
2.54BSC
15.10
INCH
MAX
4.72
0.25
2.79
0.90
1.36
0.47
1.32
9.29
10.26
15.79
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
MIN
0.173
0.000
0.102
0.030
0.048
0.013
0.048
0.339
0.392
NOM
0.179
0.005
0.106
*
*
*
*
*
*
0.100BSC
0.579 0.594
MAX
0.186
0.010
0.110
0.035
0.054
0.019
0.052
0.366
0.404
SYMBOL
L
L3
L1
L4
L2
θ
θ1
θ2
DEP
Φp1
MM
MIN
1.94
1.17
*
NOM
2.30
1.29
*
0.25 BSC
2.50 REF
0°
*
5°
7°
1°
3°
0.05
0.10
1.40
1.50
INCH
MAX
2.60
1.40
1.70
MIN
0.076
0.046
*
8°
9°
5°
0.20
1.60
0°
5°
1°
0.002
0.055
NOM
0.091
0.051
*
0.01 BSC
0.098 REF
*
7°
3°
0.004
0.059
MAX
0.102
0.055
0.067
8°
9°
5°
0.008
0.063
0.622
7
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RU40191S
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park,
Nanshan District, Shenzhen, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
8
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