Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N60-CA
Preliminary
Power MOSFET
2A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N60-CA is a high voltage power MOSFET and
is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching applications
in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.

FEATURES
* RDS(ON) < 5.0Ω@ VGS = 10V, ID =1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2N60L-TN3-R
2N60G-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
Continuous
ID
2.0
A
Drain Current
8.0
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
40
mJ
Avalanche Energy
4.5
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC = 25°С)
PD
44
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=20mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
100
2.87
UNIT
°С/W
°С/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
VGS = 0V, ID = 250μA
600
V
VDS = 600V, VGS = 0V
10
μA
Drain-Source Leakage Current
IDSS
VDS = 480V, TC = 125°С
100 μA
Forward
VGS = 30V, VDS = 0V
100 nA
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
5.0
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
300
pF
VDS =25V, VGS =0V,
Output Capacitance
COSS
45
pF
f =1MHz
10
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
40
ns
Turn-On Rise Time
tR
35
ns
VDD =300V, ID =0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
55
ns
Turn-Off Fall Time
tF
15
ns
Total Gate Charge
QG
32
nC
VDS=50V, VGS=10V,
Gate-Source Charge
QGS
3.5
nC
ID=1.3A, IG=100μA (Note 1, 2)
2.0
nC
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
Continuous Drain-Source Current
ISD
2.0
A
Pulsed Drain-Source Current
ISM
8.0
A
Reverse Recovery Time
trr
VGS = 0 V, ISD = 2.4A,
180
ns
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
0.72
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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