Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT1D5N10
Power MOSFET
1.5A, 100V N-CHANNEL
LOGIC LEVEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR

DESCRIPTION
The UTC UTT1D5N10 is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with high switch
speed and low gate charge.

FEATURES
* RDS(ON) < 290 mΩ @ VGS=10V, ID=0.75A
RDS(ON) < 300 mΩ @ VGS=4.5V, ID=0.7A
* High switch speed
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UTT1D5N10G-AE2-R
Pin Assignment: G: Gate D: Drain
Package
SOT-23-3
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
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UTT1D5N10

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous TA=25°C
1.5
A
ID
(Note 1)
Drain Current
1.2
A
TA=70°C
5
A
Pulsed (Note 2)
IDM
Single Pulsed Avalanche Energy (Note 4)
EAS
8
mJ
TA=25°C
1.25
W
Power Dissipation (Note 1)
PD
TA=70°C
0.8
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 1)

SYMBOL
θJA
RATINGS
100
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Static Drain-Source On-State Resistance
RDS(ON)
BVDSS
IDSS
IGSS
VGS(TH)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
VDS=VGS, ID=250µA
VGS=10V, ID=0.75A
VGS=4.5V, ID=0.7A
1.0
DYNAMIC PARAMETERS (Note 3)
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 3)
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RGEN=25Ω,
Rise Time
tR
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
Notes: 1. Surface Mounted on FR4 Board, t ≤ 10sec.
2. Pulse Test:Pulse Width≤300us, Duty Cycle≤ 2%.
3. Guaranteed by design, not subject to production testing.
4. Starting TJ=25°C, L=0.5mH, VDD=50V.(See Figure1)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
1
+100
-100
1.7
290
300
2.5
V
µA
nA
nA
V
mΩ
mΩ
350
28
23
pF
pF
pF
75
3
2.2
26
15
170
54
nC
nC
nC
ns
ns
ns
ns
0.8
1.2
V
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QW-R209-057.a
UTT1D5N10

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Figure 1.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-057.a
UTT1D5N10
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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UTT1D5N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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