Analog Power AM20N10-250D N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 11 10 Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 11 IDM Pulsed Drain Current b 50 IS Continuous Source Current (Diode Conduction) 28 T =25°C P Power Dissipation 50 C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 40 RθJC 3 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM20N10-250D_1B Analog Power AM20N10-250D Typical Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 4.5 A VGS = 4.5 V, ID = 4 A VDS = 15 V, ID = 4.5 A IS = 14 A, VGS = 0 V Dynamic VDS = 50 V, VGS = 4.5 V, ID = 4.5 A VDD = 50 V, RL = 14.3 Ω , ID = 4.5 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f =1 MHz f = 1 MHz Min Typ 1 Max Unit 3.5 ±100 1 25 V nA 34 uA A 280 355 5 0.95 3.8 1.3 1.7 4.8 3.9 12.7 3.2 332 40 29 0.3 mΩ S V nC nS pF Ω Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM20N10-250D_1B Analog Power AM20N10-250D Typical Electrical Characteristics 0.6 10 TJ = 25°C 0.5 8 ID - Drain Current (A) RDS(on) - On-Resistance (Ω) 9 0.4 4.0V 0.3 4.5V 6.0V 0.2 8.0V 10V 7 6 5 4 3 2 0.1 1 0 0 0 1 2 3 4 5 6 0 7 ID-Drain Current (A) 4 6 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 1 100 TJ = 25°C 0.9 TJ = 25°C ID = 4.5A 0.8 IS - Source Current (A) RDS(on) - On-Resistance (Ω) 2 0.7 0.6 0.5 0.4 0.3 0.2 10 1 0.1 0.1 0 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 10V 4 1200 4.0V 3 2 Ciss 1000 800 600 400 1 200 0 0 2 3 4 5 Coss Crss 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 1.5 F = 1Mhz 1400 4.5V 1 1.2 1600 8.0V 6.0V 5 0 0.9 4. Drain-to-Source Forward Voltage Capacitance (pf) ID - Drain Current (A) 6 0.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 7 0.3 6. Capacitance 3 Publication Order Number: DS_AM20N10-250D_1B Analog Power AM20N10-250D Typical Electrical Characteristics 2.5 VDS = 50V 9 ID = 4.5A 8 RDS(on) - On-Resistance (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 2 4 6 8 10 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAKTRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC DC 0.1 IDM Limit limited by RDS 0.01 0.1 1 10 100 90 80 70 60 50 40 30 20 10 0 0.001 1000 0.01 0.1 VDS Drain to Source Voltage (V) 1 10 100 1000 t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) x RθJA RθJA = 40 °C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM20N10-250D_1B Analog Power AM20N10-250D Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. © Preliminary 5 Publication Order Number: DS_AM20N10-250D_1B