AUTOMOTIVE THE POWER MANAGEMENT LEADER Automotive DirectFET®2 Product Platform Features: •Automotive Qualified to AEC Q101 •Exceptional power density •Low parasitic inductance •Double-sided cooling •Autoclave capable •MSL1 Rated •New large can: 60% area reduction, with improved RDS(on) compared to best-in-class D2Pak •Voltage ratings up to 250V •Standardized pad outlines allowing for easy system scalability Applications: •Injection •DC-DC •Motor Drive •Battery Switch •Class D •Steering Systems Improve Performance and Efficiency; Reduce System Size and Part Count In 2002, International Rectifier introduced its unique power semiconductor packaging technology with the launch of the DirectFET® product line. The DirectFET concept yielded a power package with vastly improved performance when compared to traditional plastic power packages. Since that time IR has undertaken extensive research and development to produce the DirectFET®2 platform, specifically aimed at Automotive applications. The new Automotive DirectFET®2 product platform combines the outstanding performance of the DirectFET packaging technology with IR’s latest trench silicon which can be optimized by application for next-generation vehicle platforms for ultra-low on-state resistance (RDS(on)), gate charge (Qg) or logic level operation. DirectFET®2 DirectFET®2 MOSFET DirectFET 2 MOSFET Small Can Medium Can ® For more information in North America call +1 310 252 7105, in Europe call +49 6102 884 311, or visit us at www.irf.com MOSFET Large Can 10526B_FS Improve Performance and Efficiency; Reduce System Size and Part Count Lowest Die Free Package Resistance 90 1.6 Thermal resistance (°C/W) 1.2 Rth(j-c)top 1 0.8 0.6 0.4 70 60 Rth(j-pcb) 50 j-c(top) j-pcb 40 30 20 0.2 10 -8 SO N QF SO p SO-8 k QFN tra D2Pak -s Cu-strap SO-8 D2 Pa Cu-strap QFN Di re c Cu tFET -s tra p QF N DirectFET -8 0 0 Cu DFPR (mOhm) Superior Dual-sided Cooling 80 1.4 Reduced parasitic inductance and ringing for improved EMI performance ! Die free package inductance versus frequency SO-8 6.00 Die free package inductance (nH) 5.00 4.00 DFET 3.00 SO-8 2.00 D-Pak 1.00 D2Pak (3x20) DirectFET®2 0.00 0 1 2 3 4 5 Frequency (MHz) V(BR)DSS (V) RDS(ON) Max. @ 10VGS (mOhm) 40 40 40 40 40 40 60 60 75 100 100 100 100 150 250 1.0 1.6 1.9 3.0 4.1 9.9 7.0 36.0 1.8 4.4 10.0 31.0 62.0 56.0 32.0 RDS(ON) Max. @ 4.5VGS (mOhm) 2.9 6.4 10.5 ID Max @ TC = 25°C (A) QG Typ. @ 10VGS (nC) 270 210 156 108 143 65 68 21 160 114 51 24 14 18 35 220 147 89 72 QG Typ. @ 4.5VGS (nC) 59 24 35 7 200 81 44 14 8 21 110 Pad Outline Optimized Feature L8 L6 L6 M4 M4 SC M4 SB L8 L8 M4 SC SB M2 L8 Low RDS(on) Low RDS(on) Low RDS(on) Low RDS(on) Low RDS(on) Low RDS(on) Low Qg Low Qg Low RDS(on) Low Qg Low RDS(on) Low Qg Low Qg Low Qg Low RDS(on) Package Small Can Medium Can Large Can AUIRF7739L2 AUIRF7738L2 AUIRF7737L2 AUIRF7736M2 AUIRL7736M2 AUIRL7732S2 AUIRF7648M2 AUIRF7640S2 AUIRF7759L2 AUIRF7669L2 AUIRL7766M2 AUIRF7647S2 AUIRF7665S2 For more information in North America call +1 310 252 7105, in Europe call +49 6102 884 311, or visit us at www.irf.com AUIRF7675M2 AUIRF7799L2 10526B_FS