Appli ca ti o n Gu ide f o r Mo bi le Commu n icat i o n Application Guide About this document This Application Guide for Mobile Communication presents recent trends in Radio Frequency applications including suggestions for using the latest Infineon products. It is a reference book to help mobile phone design experts to find the right parts easily for building high-performance RF Front Ends. The following subjects are covered: 1. 2. 3. 4. 5. 6. 7. Overview of Infineon Technologies AG's RF product portfolio RF switches in mobile phones and wireless systems Low Noise Amplifiers for mobile phones LNAs and FE modules and other RF devices for global navigation satellite systems RF devices for Wireless Local Area Network, unlicensed LTE and Licensed Assisted Access RF devices for FM radio and mobile TV Electrostatic Discharge protection devices for mobile phones Application Guide for Mobile Communication Infineon Technologies Infineon Technologies A Leading Company in RF and Sensors Infineon Technologies focuses on the three central challenges facing modern society: Energy Efficiency, Mobility and Security. It offers semiconductor components and system solutions for automotive, industrial, mobile, wireless, consumer, chip-card and security applications. Infineon’s products stand out for their reliability, their quality excellence and their innovative and leading-edge technologies in analog and mixed signal, RF and power, as well as embedded control. With its technologies and design expertise, Infineon is the market leader in its focused segments. Infineon has more than 60 years of experience in developing RF products for numerous applications and always plays a leading role in the market with high performance, yet cost effective products. You can visit our website www.infineon.com to learn more about the broad product portfolio of Infineon Technologies. The Infineon business unit - RF and Sensors (RFS) - has evolved over the years from a supplier of standard RF discrete components such as transistors and diodes to an advanced portfolio of state-of-the-art, innovative and differentiated products including application specific Microwave Monolithic Integrated Circuits (MMICs), millimeter-wave transceivers, RF power amplifiers, sensors and ESD protection components. Please visit our website www.infineon.com under the categories “RF & Wireless Control”, “Sensors IC” or “ESD & EMI” to learn more about Infineon’s latest RF, Sensor and Protection products for your applications. Infineon’s RFS application guides with three different brochures are an easy-to-use tool primarily meant for engineers to guide them to the right devices for their system efficiently. These application guides are updated frequently to include latest applications and trends. Each brochure focuses on one of our major market segments: 1. Application Guide for Mobile Communication: www.infineon.com/appguide_rf_mobile 2. Application Guide for Industrial Applications: www.infineon.com/appguide_rf_industrial 3. Application Guide for Protection: www.infineon.com/appguide_esd_protection Our application experts worldwide are always ready to support you in designing your systems with our devices. Please contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get all the support you might need. Kind Regards, Dr. Heinrich Heiss Dr. Chih-I Lin Head of Technical Marketing Group Leader of Technical Marketing & Application Engineering, RFS & Application Engineering RF Devices, RFS 1 Application Guide for Mobile Communication Table of Contents Table of Contents Infi neon Technologies ............................................................................................................................... 1 1 Infineon’s RF and Protection Devices for Mobile Communication ................................................. 4 2 2.1 2.2 2.2.1 2.2.2 2.3 2.3.1 2.3.2 2.3.3 2.3.4 2.3.5 2.3.6 2.4 2.4.1 2.4.2 2.4.3 2.4.4 2.5 2.5.1 2.5.2 2.5.3 2.5.4 2.5.5 High-/Medium-Power Switches for Mobile Phones and Wireless Systems ..................................... 9 Key Challenges of Antenna Switches in Modern Mobile Applications ............................................ 11 MIPI Control Interfaces for Mobile Phone Industry .......................................................................... 13 MIPI RFFE – Mobile Industry Processor Interface for RF Front-End Devices ............................. 14 Specification V1.10 of MIPI Alliance ............................................................................................ 15 High- and Medium-Power RF Switches ............................................................................................ 16 Antenna Switch Modules for Main Path ..................................................................................... 16 Ultra-High Linearity Switches ..................................................................................................... 17 Diversity Antenna Switches ........................................................................................................ 18 Band-selection Switches in a Single-ended Configuration ....................................................... 19 Cross Switches ............................................................................................................................ 20 Band-selection Switches in a Differential Configuration .......................................................... 21 Antenna Tuning Switches ................................................................................................................. 22 Antenna Impedance Matching.................................................................................................... 22 Antenna Aperture Tuning ........................................................................................................... 23 System Approach to Aperture Tuning ........................................................................................ 23 Key Parameters of Antenna Tuning Switches ............................................................................ 25 PIN Diode Switches ........................................................................................................................... 26 Antenna Switch with PIN Diodes and Power Detection with Schottky Diodes ........................ 27 Ultra-Low-Harmonic-Generation Band Switch with PIN Diodes............................................... 28 Antenna Switching with PIN Diodes (I) ....................................................................................... 29 Antenna Tuning with PIN Diodes (II) .......................................................................................... 29 Bypass Path for Low Noise Amplifiers ........................................................................................ 29 3 3.1 3.2 3.2.1 3.2.2 3.3 3.4 High-sensitivity Mobile RF Front-End with Low Noise Amplifiers ................................................. 30 Key Challenges of LNAs in Mobile Applications ............................................................................... 32 Single-band LNAs and Multiple-band LNA Banks ............................................................................ 33 Single-band LNAs ........................................................................................................................ 33 Multiple-Band LNA Banks ........................................................................................................... 34 LNA Multiplexer Modules for Carrier Aggregation ............................................................................ 36 LNAs for 3.5 GHz TD-LTE Modems..................................................................................................... 38 4 4.1 4.1.1 4.1.2 4.2 4.3 4.4 Global Navigation Satellite Systems ............................................................................................ 39 Key Features of GNSS Front-End Components ................................................................................ 41 Key Features of GNSS Low Noise Amplifiers (LNAs)................................................................... 41 Key Features of GNSS Surface Acoustic Wave (SAW) Filters ...................................................... 41 System Challenges for Modern GNSS Reception in Mobile Devices ................................................ 42 RF Front-End Devices for GNSS......................................................................................................... 45 Integrated Front-End Modules for GNSS .......................................................................................... 47 5 5.1 5.1.1 5.1.2 5.1.3 Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) ................................. 48 Wireless-LAN Applications ................................................................................................................ 48 Key Features of WLAN Rx Front-End Devices ............................................................................. 50 Dual-Band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n) Front-End .............................................. 51 MIMO Configurations for WLAN (IEEE 802.11b/g/n and IEEE 802.11a/n/ac) Applications ....... 52 2 Application Guide for Mobile Communication Table of Contents 5.1.4 5.2 5.2.1 5.2.2 WLAN (IEEE 802.11a/b/g/n) Front-End Devices.......................................................................... 53 Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) .......................................................... 55 LTE-U and LAA as data rate booster for LTE-A ........................................................................... 55 LTE-U and LAA Front-End Devices .............................................................................................. 57 6 6.1 6.2 6.3 6.4 FM Radio and Mobile TV ............................................................................................................... 58 FM Radio with Embedded Antenna .................................................................................................. 59 TV Reception in Mobile Phones ........................................................................................................ 61 TV Reception with Band Selection Switch ....................................................................................... 63 FM and TV Reception in Mobile Phones with Band Selection Switch ............................................. 64 7 7.1 7.2 7.3 7.4 ESD and ESD/EMI Interface Protection ......................................................................................... 65 Interface Protection with TVS Protection Diodes ............................................................................ 66 Interface Protection with Integrated ESD/EMI Devices ................................................................... 68 Near-Field Communication............................................................................................................... 69 Surge protection for the battery charger port ................................................................................. 71 Abbreviations.................................................................................................................................................. 72 Alphanumerical List of Symbols ..................................................................................................................... 73 Package Information ...................................................................................................................................... 74 Support Material ............................................................................................................................................. 76 3 Application Guide for Mobile Communication Infineon’s RF and Protection Devices for Mobile Communication 1 Infineon’s RF and Protection Devices for Mobile Communication Mobile phones represent the largest worldwide market in terms of both volume and number of applications on a single platform today. More than 1.5 billion phones are shipped per year worldwide. The major wireless functions in a mobile phone include a 2G/3G/4G (GSM/EDGE/CDMA/UMTS/WCDMA/LTE/LTE-A/TDSCDMA/TD-LTE) cellular modem, and wireless connectivity systems such as Wireless Local Area Network (WLAN), Global Navigation Satellite System (GNSS), broadcasting receivers and Near-Field Communication (NFC). Moving towards 4G Long-Term Evolution-Advanced (LTE-Advanced), the number of LTE bands has exploded in the last few years. Currently, there are 44 LTE bands worldwide for LTE systems. The following table, derived from the latest release of 3GPP TS 36.101 V12.7.0 “Evolved Universal Terrestrial Radio Access (EUTRA) - User Equipment (UE) radio transmission and reception” in April 2015, shows the LTE band numbers with up-/down-link frequency ranges and their related multiplexing methods: Band No. Band Definition Uplink Frequency Range Downlink Frequency Range FDD/TDD System 1 Mid-Band 1920-1980 MHz 2110-2170 MHz FDD 2 Mid-Band 1850-1910 MHz 1930-1990 MHz FDD 3 Mid-Band 1710-1785 MHz 1805-1880 MHz FDD 4 Mid-Band 1710-1755 MHz 2110-2155 MHz FDD 5 Low-Band 824-849 MHz 869-894 MHz FDD 6 Low-Band 830-840 MHz 875-885 MHz FDD 7 High-Band 2500-2570 MHz 2620-2690 MHz FDD 8 Low-Band 880-915 MHz 925-960 MHz FDD 9 Mid-Band 1749.9-1784.9 MHz 1844.9-1879.9 MHz FDD 10 Mid-Band 1710-1770 MHz 2110-2170 MHz FDD 11 Mid-Band 1427.9-1452.9 MHz 1475.9-1500.9 MHz FDD 12 Low-Band 698-716 MHz 728-746 MHz FDD 13 Low-Band 777-787 MHz 746-756 MHz FDD 14 Low-Band 788-798 MHz 758-768 MHz FDD 15 reserved reserved FDD 16 reserved Reserved FDD 17 Low-Band 704-716 MHz 734-746 MHz FDD 18 Low-Band 815-830 MHz 860-875 MHz FDD 4 Comment Application Guide for Mobile Communication Infineon’s RF and Protection Devices for Mobile Communication Band No. Band Definition Uplink Frequency Range Downlink Frequency Range FDD/TDD System 19 Low-Band 830-845 MHz 875-890 MHz FDD 20 Low-Band 832-862 MHz 791-821 MHz FDD 21 Mid-Band 1447.9-1462.9 MHz 1495.9-1510.9 MHz FDD 22 High-Band 3410-3500 MHz 3510-3600 MHz FDD 23 Mid-Band 2000-2020 MHz 2180-2200 MHz FDD 24 Mid-Band 1626.5-1660.5 MHz 1525-1559 MHz FDD 25 Mid-Band 1850-1915 MHz 1930-1995 MHz FDD 26 Low-Band 814-849 MHz 859-894 MHz FDD 27 Low-Band 807-824 MHz 852-869 MHz FDD 28 Low-Band 703-748 MHz 758-803 MHz FDD 29 Low-Band N/A 716-728 MHz FDD 30 High-Band 2305-2315 MHz 2350-2360 MHz FDD 31 Low-Band 452.5-457.5 MHz 462.5-467.5MHz FDD 32 Mid-Band N/A 1452-1496 MHz FDD 33 Mid-Band 1900-1920 MHz TDD 34 Mid-Band 2010-2025 MHz TDD 35 Mid-Band 1850-1910 MHz TDD 36 Mid-Band 1930-1990 MHz TDD 37 Mid-Band 1910-1930 MHz TDD 38 High-Band 2570-2620 MHz TDD 39 Mid-Band 1880-1920 MHz TDD 40 High-Band 2300-2400 MHz TDD 41 High-Band 2496-2690 MHz TDD 42 High-Band 3400-3600 MHz TDD 43 High-Band 3600-3800 MHz TDD 44 Low-Band 703-803 MHz TDD Comment Note: FDD: Frequency Division Duplexing; TDD: Time Division Duplexing The mobile technologies for smartphones have seen phenomenal growth in recent times. The data rate of mobile devices has increased significantly over the evolution of modern mobile technologies from the first 3G/3.5G technologies (Universal Mobile Telecommunications System (UMTS) and Wideband-Code Division Multiple Access (WCDMA), High-Speed Packet Access (HSPA) and Evolved High-Speed Packet Access (HSPA+)) to 4G LTE-Advanced (LTE-A). The ability of 4G LTE-A to support bandwidths up to 20 MHz and to have more spectral efficiency by using high order modulation schemes such as Quadrature Amplitude Modulation (QAM-64) is of particular importance as the demand for higher wireless data speeds continues to 5 Application Guide for Mobile Communication Infineon’s RF and Protection Devices for Mobile Communication grow rapidly. LTE-A can aggregate up to 5 carriers (up to 100 MHz) to increase user data rates and capacity for high-speed applications. These new technical features for mobile high-data-rate communication, and advanced wireless connectivities can be summarized as following: - Inter-operation Frequency Division Duplexing (FDD) + Time Division Duplexing (TDD) systems - Down-/uplink Carrier Aggregation (CA) - LTE-U and LAA at 5 to 6 GHz using link aggregation or carrier aggregation - Adaptive antenna systems - Multiple-Input Multiple Output (MIMO) at RF FEs - Device-to-Device (D2D) communication with LTE (LTE-D) - High speed wireline connection with USB 3.0, Bluetooth 4.0 etc. They drive the industry to develop new concepts for Radio Frequency (RF) Front-Ends (FEs) and the antenna system and digital interface protection. These require microwave semiconductor vendors to offer highly integrated and compact devices with lower loss rates, and more powerful and linear performance. The key trends in RF components for mobile phone are: - Microwave Monolithic Integrated Circuits (MMICs) with smaller form factors - Higher levels of integration with control buses - Higher RF power capability - Ability to handle increased number of bands and modes - Better immunity to interfering signals - Frequency tunability - Higher integration of various functions in one package As a result of the coexistence of various wireless functions, cross-functional interference becomes much more complicated. Using our extensive application know-how, knowledge about application trends, and industry contacts, all our products are designed to fit into their respective applications to meet industry standards. This simplifies the design and makes choosing the right device easier for the system designers. All applications described in this document are depicted with simple block diagrams to show the various building blocks, followed by short descriptions. Infineon's recommended devices for each application are tabulated together with their most important performance characteristics. More detailed information on each product including datasheet, application notes, device libraries with Spice models and S-parameter files, products and application brochures, sample kits etc. is available on Infineon’s website www.infineon.com/rfandprotectiondevices by clicking on the specific product name. Infineon product portfolio for mobile phone applications: Infineon offers most of the important building blocks for RF FE systems. Our product portfolio addresses requirements for these high-performance RF 6 Application Guide for Mobile Communication Infineon’s RF and Protection Devices for Mobile Communication devices by offering RF MMIC LNAs, RF Complementary Metal-Oxide-Semiconductor (CMOS) switches, RF modules, antenna-tuning devices, RF couplers, RF transistors and diodes, and RF Electro-Static Discharge/ Electromagnetic Interference (ESD/EMI) devices with optimal performance and low power consumption. Infineon offers products for cellular modems, wireless connectivity functions, broadcasting receivers, sensors, ESD/EMI interface devices and more. The following block diagrams illustrate the product portfolio offered by Infineon for mobile communication. Mobile Connectivity RF Radio Block Cellular RF Wi-Fi Antenna Diplexer Diplexer 2.4 GHz TX 2.4 GHz RX BT 5 GHz TX 2.5G Main Antenna WiFi/ WiFi/ Bluetooth Bluetooth 5 GHz RX GNSS Antenna Multiband Transceiver GNSS 3G/4G FM Antenna TV Antenna Diversity Antenna FM TX FM RX UHF VHF 2 VHF 1 FM/ TV radio 3G/4G Overview of Infineon’s products for mobile devices Overview of Infineon’s ESD protection devices 7 Application Guide for Mobile Communication Infineon’s RF and Protection Devices for Mobile Communication Infineon supports customers with system know-how to design RF front-ends: Infineon provides design-in support for Infineon’s RF FE and protection products, as well as collaboration with its customers and partners on the mobile phone RF system level to define the best solution for their requirements. By using various system-level simulation tools with behavior models, system-level test equipment, and reference hardware for RF FE total solutions, Infineon can demonstrate and optimize system performance to reduce time-to-market. The following pictures show one example. The upper graphic illustrates a mobile diversity receiver simulation environment, and the lower graphic shows the related block diagram and the hardware implemented for performance verification of the simulation results. Simulation environment of receiver diversity path Block diagram and implemented hardware for verification 8 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2 High-/Medium-Power Switches for Mobile Phones and Wireless Systems Infineon's broad portfolio of Radio Frequency (RF) switches includes high-performance devices with low Insertion Loss (IL), high isolation and low harmonics generation. Besides RF switches for main and diversity paths for high-volume production, Infineon uses a proprietary RF-Complementary Metal-OxideSemiconductor (CMOS)-based process on silicon substrate for its RF switches. These switches can also be built using other technologies such as Silicon-on-Insulator (SoI), Silicon-onSapphire (SoS), Gallium Arsenide (GaAs), or the more classical PIN diodes. However, using CMOS design on Si substrate offers many advantages, such as integration scale, volume production, reliability and costs, over its counterparts. The CMOS process also enables biasing and control circuitry to be integrated on the same die. Control logic interfaces such as General Purpose Input/Output (GPIO), Serial Peripheral Interface (SPI) or RF Front-End Mobile Industry Processor Interface (RFFE-MIPI) are fully integrated. CMOS-compatible logic levels eliminate the need for external level shifters. This simplifies the design process, and reduces external part count. This technology also ensures that no Direct Current (DC) voltage is present at the RF ports. That means no external blocking capacitors are required at RF ports in case there is no DC voltage is on the RF traces. For example, a passive device such as a Surface-Acoustic-Wave (SAW) or a Bulk-Acoustic-Wave (BAW) filter can be connected directly to our RF switches. Infineon’s RF CMOS switches are the first on the market to be based purely on standard industrial CMOS processes that offer low insertion loss, high isolation and low harmonics generation for high-volume production. They are widely used for band selection/switching or diversity switching at the antenna or different RF paths within the RF Front-End (FE). The classical approach of using PIN diodes as switches is obsolete. PIN diodes have high current consumption and slow switching speeds. They require many external components for complex modern mobile phone systems. Infineon’s RF CMOS technologies with its high integration capability is thus the technology of choice for RF switches that are small, inexpensive, have integrated control logic circuits, and require zero external components. In addition to all the above advantages, CMOS switches offer excellent Electro-Static Discharge (ESD) robustness. Infineon offers a wide variety of switches and Antenna Switch Modules (ASMs) ranging from simple switches such as simple Single-Pole Double-Throw (SPDT) switches to complex high port count configurations, e.g. Single-Pole Ten-Throw (SP10T) or Double-Pole Fourteen-Throw (DP14T) switches. Their power capability 9 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems ranges from medium (+20 dBm) to high power (+36 dBm). Infineon also has differential RF-switch designs such as Double-Pole Double-Throw (DPDT) devices. As for the main path ASM components, Infineon is using its compact Integrated Passive Device (IPD) technology to integrate harmonic filters for Global System for Mobile Communication (GSM) transmission frequencies in miniature module packages. The main antenna switch must be highly linear to provide high isolation between transmit and receive chains, with the lowest insertion loss possible. For architectures that integrate new features such as downlink inter-band carrier aggregation to increase downstream data rates, ASMs are facing new challenges as they have to route two signals, received in different frequency bands, simultaneously. The new switches with multiple ports such as the SP7T+SP7T, or the DP14T, can be used for these kinds of applications. Infineon’s RF switches are delivered either in discrete Thin Small Leadless Package (TSLP) or Thin Small Non-leaded Package (TSNP) packaged components or as Chip-Scale-Packages (CSPs) with a pin pitch much smaller than 180 µm for module manufacturers. Infineon also supports chip-set makers' reference designs with dedicated products whose RF performance and control interface will meet chip-set requirements. Infineon products make it easy to use and fast to design customer systems. Infineon also has devices in its RF switch portfolio that are suitable for inter-band and intra-band carrier aggregation. Infineon offers system know-how that can help customers select the best products with respect to filters and Low Noise Amplifiers (LNAs). The devices support carrier aggregation from a control logic point-of-view. Devices such as BGSF1717MN26 have a fixed Truth Table (TT), matching the definition of a mobile phone chip set. Other devices such as BGS15MA12 use a TT with direct mapping, meaning that each RF path has only one bit in the MIPI command. Please visit our website www.infineon.com/rfswitches for more details on RF switches for mobile phone and all wireless applications, or contact your local Infineon or sales representative. 10 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.1 Key Challenges of Antenna Switches in Modern Mobile Applications Smartphones today can operate across several cellular bands including GSM/ EDGE/ CDMA/ UMTS/ WCDMA/ LTE/ LTE-A/ TD-SCDMA/ TD-LTE. The design of the RF FE part in modern mobile phones is becoming increasingly complex and demanding due to the increasing number of frequency bands and modes in which the phone needs to operate. One of the main components of a RF FE is the antenna switch that selects which Transmitter (TX)/Receiver (RX) path can be connected to the antenna. The RF switch has to satisfy high linearity requirements. This section presents some of the main challenges of antenna switches in mobile applications. 2G Main Antenna Multi-Mode Transceiver 3G/4G Diversity Antenna 3G/4G Typical RF FE in a mobile phone Insertion Loss (IL) IL is an important parameter since the RF switch is placed between the antenna and the radio. Any increase of IL results in an increased system Noise Figure (NF) in the receiver path and wastes transmit power, which reduces connectivity distance and battery lifetime. 11 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems High Isolation (Iso) Isolation between ports is the measure of the signal suppression in excess of the IL between the “off” ports. High isolation in switches is desired to minimize the interference or leakage from other ports. Compression Point (P1dB or P0.1dB) Compression Point is a measure of high power capability for RF front-end switches. The P0.1dB specifies the input power level at the switch in dBm at which the IL of the switch increases by 0.1 dB compared to the value in the linear region with small signal operation. This value confirms the power handling capability of the switch. Infineon’s switches are measured up to an input power of 30 to 40 dBm without observable deterioration in the IL. Harmonic Generation (2nd Harmonics H2 and 3rd Harmonics H3) Harmonic generation is an important parameter for the characterization of a RF switch. RF switches for mobile phones have to deal with high RF levels, up to 36 dBm, even with strongly mismatched conditions. Harmonics are generated with this high RF power at the input of the switch. These harmonics (e.g. 2nd and 3rd) can disturb other reception bands or cause interference in other RF applications (Global Positioning System (1575.42 MHz) (GPS), Wireless Local Area Network (WLAN)) within the same mobile phone or in mobile phones nearby. Intermodulation Distortion (IMD2 and IMD3) IMD is the linearity parameter of the device under multi-tone conditions. The intermodulation between each frequency component generates undesired outputs at the sum and difference frequencies of the input tones and at multiples of those sum and difference frequencies. The intermodulation products increase the spread of the signal spectrum which leads to adjacent channel interference. Digital Control Interface Traditionally, switches are controlled through the parallel GPIO scheme, which involves a set of parallel control lines with pre-defined “high” and “low” logic. This is mainly used for all low-complexity RF switches. More and more designs are moving from this parallel interface to a serial one, such as Serial Peripheral Interface (SPI). Mobile chipset companies formed the Mobile Industry Processor Interface (MIPI) alliance, aiming to standardize communication between all major components in mobile devices with structured register commands. Meanwhile all companies are adopting MIPI and requiring RF switches used in their mobile devices to be MIPI-compatible. 12 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.2 MIPI Control Interfaces for Mobile Phone Industry The MIPI Interface (Mobile Industry Processor Interface) contains 20 standardized interfaces for mobile phone device platforms such as: - RFFE, a two-wire serial bus for control of RF Front-End components, e.g. LNAs or RF-Switches - SoundWire, a Two-wire time-division bus supporting multiple clocks, also audio clocks for audio broadcast, e.g. microphones or speaker. - SensWire (Sensor IF), a 2-pin interface that is backward compatible to I2C standard and is comparable to SPI for sensors, e.g. pressure sensors. An overview about MIPI interfaces in a Mobile platform is pictured below. IEEE 1149.7 LLI/M-PCIe UniPort/SSIC PTI WLAN, WiGig Debug Connectors SD Card Connector Application Processor GbT/SPP BT, GNSS, FM, NFC SUMbus LLI/M-PCIe LLI/M-PCIe UniPort/SSIC UniPort/SSIC WIP WIP Modem SPMI Audio Codec USB 2.0 DSI Display CSI Camera UFS Mass Storage Companion Or Bridge Chip D-PHY or M-PHY D-PHY based eTrack RF Frontend ETPS M-PHY based Power Management RFIC RFFE 13 BIF Battery Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.2.1 MIPI RFFE – Mobile Industry Processor Interface for RF Front-End Devices MIPI RFFE is the common control interface in Mobile Phone Devices due to the becoming higher complexity of their RF Front-End systems. There are more and more band used, 2x Rx CA is currently implemented and 3x CA Rx and 2x CA Tx is in preparation for the next generation of Mobile Phones. Therefore, to reduce control line complexity and RF IC pin count the MIPI RFFE interface is mostly used and will have more and more priority in future RFFE is a flexible two-wire serial bus, designed primarily for control of RF Front-End components, that allows for very simple to complex Slave devices. One bus master can write and read up to 15 devices, such as power amplifiers, sensors, switch modules, and antenna tuners. RFFE includes a group trigger function for timing-critical events and provisions for low current consumption and low EMI. Below, a typical MIPI bus structure is shown below. Single LNA / LNA Bank Signal Path MIPI-RFFE Bus ASM / Diversity Switch Antenna Tuning RFIC Sensor 14 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.2.2 Specification V1.10 of MIPI Alliance The MIPI RFFE Bus can support a speed of 32 kHz to 26 MHz or even 52 MHz in future. The VIO voltages support 1.2 and/or 1.8 Volts. The bus protocol is a Single-ended signalling for a clock line, along with a bidirectional data line, in a point-to-multipoint configuration. The structure (picture below) is defined with one Master (RFIC) and up to 15 slaves as LNAs, switches or antenna tuners. RFFE Slave 0x2 RFFE Slave 0xF RFFE Master MIPI RFFE protocol(example) RFFE Slave 0x1 RFFE Slave 0x3 ... VIO ... Clock ... Data Up to 15 slaves (4 bit adresses) SCLK SDATA SEC Sequence Start condition MIPI RFFE Specifications: - MIPI RFFE commands/ protocols (Register Write, Register0 Write, …) Registers: e.g. Register 0, PM_Trig, Product_ID, Manufcaturer_ID and MAN_USID Register Timing information and VIO voltage levels for 1.2V and 1.8V bus mode Trigger functionality, Programmable USID MIPI RFFE ID’s: USID, BSID, GSID, Product ID and Manufacturer ID The MIPI RFFE specification defines the basic functionality of the RFFE Bus but it also provides the degree of freedom to specify additional registers, customer related features and default values. Please refer to MIPI Alliance for more details about the MIPI interface standards: http://www.mipi.org/about-mipi/mipiinterfaces-mobile-platform 15 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.3 High- and Medium-Power RF Switches 2.3.1 Antenna Switch Modules for Main Path ANT Switch with GSM Filter Mobile Phone Antenna 2G Transceiver IC Antenna Tuner 3G/4G Transceiver IC Duplexer RF CMOS antenna switch module Antenna Switch Modules for Main Antenna Product Type App. Note Vdd [V] Vctrl1) [V] IL2) [dB] Iso.3) [dB] Pin,max4) [dBm] Ctrl.5) Int. Package BGSF18DM20 SP8T AN247 AN284 2.85 … 4.7 1.6… 3.5 0.6 / 0.7 (TRx)/ 1.0 / 1.0 (Tx) 40/35 32(TRX)/ 36 (TX) SPI VCCN-20-1 BGSF110GN26 SP10T AN306 2.4… 3.3 1.35 …Vdd 0.5 / 0.58(TRx)/ 0.9 / 1.0 (Tx) 40/25 30(TRX)/ 36 (TX) GPIO TSNP-26-2 BGSF1717MN26 CA 2x SP7T on request 2.4… 5.5 1.05…1. 95 0.5 / 0.6(TRx)/ 0.9 / 1.0 (Tx) 38/27 30(TRX)/ 36 (TX) RFFE MIPI TSNP-26-3 Notes: 1) Digital Control Voltage (logic high); 4) Maximum input power; 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 5) Control Interface; 3) Isolation at 1.0/ 2.0 GHz from RFin to RF port; 6) Please visit www.infineon.com/rfswitches for alternative devices. Carrier-Aggregation-Capable Antenna Switch Modules for Main Antenna Product BGSF1717MN26 Notes: Type CA 2x SP7T App. Note Vdd [V] Vctrl1) [V] IL2) [dB] Iso.3) [dB] Pin,max4) [dBm] Ctrl.5) Int. Package on request 2.4… 5.5 1.05…1. 95 0.5 / 0.6(TRx)/ 0.9 / 1.0 (Tx) 38/27 30(TRX)/ 36 (TX) RFFE MIPI TSNP-26-3 1) Digital Control Voltage (logic high); 4) Maximum input power; 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 5) Control Interface; 3) Isolation at 1.0/ 2.0 GHz from RFin to RF port; 6) Please visit www.infineon.com/rfswitches for alternative devices. 16 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.3.2 Ultra-High Linearity Switches The high-power handling capability, ultra-high linearity, excellent insertion loss and high isolation performance of the BGS1xPN9 product family combined with a tiny package size meet the most stringent linearity requirements of GSM/LTE/CDMA handset and data-card switching applications. The linearity performance achieved by these devices makes them well-suited for use in Simultaneous Voice and LTE (SVLTE), WCDMA, CDMA and carrier aggregation applications. The devices can also be used in a variety of other applications that require high-power RF switching. Ultra-High Linearity Switches Product Type App. Note Vdd [V] Vctrl1) [V] IL2) [dB] Iso.3) [dB] Pin,max4) [dBm] Ctrl.5) Int. Package BGS12PL6 SPDT AN319 2.4…3.6 1.4 – Vdd 0.36 / 0.46 37 / 27 +36 GPIO TSLP-6-4 BGS12PN9 SPDT 1.8 – 3.3 1.35…Vdd 0.3 / 0.34 38 / 30 +35 GPIO TSNP-9-2 BGS13PN9 SP3T 1.8 – 3.3 1.35…Vdd 0.34 / 0.38 35 / 28 +35 GPIO TSNP-9-2 Notes: on request on request 1) Digital Control Voltage (logic high); 4) Maximum input power; 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 5) Control Interface; 3) Isolation at 1.0/ 2.0 GHz from RFin to RF port; 6) Please visit www.infineon.com/rfswitches for alternative devices. 17 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.3.3 Diversity Antenna Switches The recent trend of smartphone and tablet users to download more and more data anytime and anywhere increases the demand for more bandwidth and for an additional receiver channel called the diversity path. To select the right receive band, a diversity switch with low insertion loss and excellent RF performance is one method of choice. Nowadays, diversity switches covering up to 7 or more different UMTS/LTE bands are becoming more and more popular in smartphones and tablets. LTE LNA B38 SAW PCB Trace Diversity Switch B39 SAW Diversity Antenna B38 SAW B39 SAW RF IC Diplexer B40 SAW B40 SAW Example of TD-LTE band for diversity path RF CMOS Switches for Diversity Antenna Vdd [V] Vctrl1) [V] IL2) [dB] Isolation3) [dB] Pin,max4) [dBm] Ctrl.5) Int. 2.4…3.6 1.4…Vdd 0.4/0.5 32/25 21 GPIO TSLP-7-6 AN175 2.4…3.6 1.4… Vdd 0.4/0.5 32/25 21 GPIO TSLP-7-6 SPDT AN332 1.8…3.5 1.35…Vdd 0.25 / 0.28 40 / 32 30 GPIO TSNP-6-2 BGS14AN16 SP4T AN331 2.85…4.7 1.5…Vdd 0.34 / 0.55 40 / 30 30 GPIO TSNP-16-6 BGS15AN16 SP5T 2.85...4.7 1.5…Vdd 0.34 / 0.55 40 / 30 32 GPIO TSNP-16-6 BGS16MN14 SP6T AN368 2.5…5.5 MIPI 0.3 / 0.4 42 / 37 32 BGS18MN14 SP8T AN366 2.5…5.5 MIPI 0.3 / 0.5 40 / 32 32 BGS110MN20 SP10T AN333 2.5…5.5 MIPI 0.4 37 32 Product Type BGS12AL7-4 SPDT BGS12AL7-6 SPDT BGS12SN6 Notes: App. Note AN175 AN206 AN230 AN259 1) Digital Control Voltage (logic high); 4) Maximum input power; 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 5) Control Interface; RFFE MIPI RFFE MIPI RFFE MIPI Package TSNP-14 TSNP-14-3 TSNP-20-1 3) Isolation at 1.0/ 2.0 GHz from RFin to RF port; 6) Please visit www.infineon.com/rfswitches for alternative devices. Carrier-Aggregation-Capable RF CMOS Switches for Diversity Antenna Product Type App. Note Vdd [V] Vctrl1) [V] IL2) [dB] Isolation3) [dB] Pin,max4) [dBm] Ctrl.5) Int. BGS15MA12 SP5T on request 2.2…5.5 MIPI interface 0.28 / 0.35 34 / 27 27 RFFE MIPI Notes: 1) Digital Control Voltage (logic high); 4) Maximum input power; 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 5) Control Interface; 3) Isolation at 1.0/ 2.0 GHz from RFin to RF port; 6) Please visit www.infineon.com/rfswitches for alternative devices. 18 Package aTSLP-12-4 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.3.4 Band-selection Switches in a Single-ended Configuration The number of LTE bands to support in a mobile phone is increasing rapidly worldwide. A simple way to support more bands in a mobile phone is to implement the band selection function by adding a RF CMOS switch to the existing transceiver/diversity Integrated Circuits (ICs). The following two examples show band selection with a SPDT switch in a single-ended configuration. UMTS PCS or IMT GSM850 RX Transceiver IC GSM900 RX GSM1800 RX GSM1900 RX GSM850/900 TX PA LPF GSM1800/1900 TX UMTS Cell PCS UMTS SPDT Switch PCS or IMT IMT Application 1: PCS/IMT band switching with CMOS SPDT switch Diversity Switch Diversity Antenna Duplexer SPDT Switch PA DPT TX Transceiver IC Duplexer SPDT Switch DPDT RX LNA Application 2: LTE Band-1/Band-4 switching with CMOS SPDT switch RF CMOS Switches App. Note Product Type BGS12AL7-4 SPDT BGS12AL7-6 SPDT BGS12PL6 SPDT AN319 BGS12SN6 SPDT AN332 Notes: AN175 1) Digital Control Voltage (logic high); 4) Maximum input power; Vdd [V] Vctrl1) [V] IL2) [dB] Isolation3) [dB] Pin,max4) [dBm] Ctrl.5) Int. Package 2.4…3.6 1.4…3.6 0.4 / 0.5 32 / 25 21 GPIO TSLP-7-4 2.4…3.6 1.4…3.6 0.4 / 0.5 32 / 25 21 GPIO TSLP-7-6 2.4…3.6 1.4 – Vdd 0.36 / 0.46 37 / 27 36 GPIO TSLP-6-4 1.8…3.3 1.35… Vdd 0.25 / 0.28 40 / 28 30 GPIO TSNP-6-2 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 5) Control Interface; 3) Isolation at 1.0/ 2.0 GHz from RFin to RF port; 6) Please visit www.infineon.com/rfswitches for alternative devices. 19 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.3.5 Cross Switches The following figure shows a typical application for a cross switch in a mobile phone. With this device you can always select the best performing antenna for optimizing transmit power for an up-link (UL) or improved receive sensitivity for a down link (DL). 2G Main Antenna 3G/4G Multi-Mode Transceiver Diversity Antenna 3G/4G Example of cross switches Cross Switches for Antenna Selection Product Type App. Note Supply VDD [V] Vctrl1) [V] BGSX22GN10 DPDXT on request 1.8 – 3.3 1.35…VDD Notes: 1) Digital Control Voltage (logic high); 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 4) 0.1 dB compression point; 5) Maximum input power; 7) Please contact your local Infineon or sales representatives for further products. IL2) [dB] Isolation3) [dB] Pin,max5) [dBm] Ctrl.6) Int. Package 0.35 / 0.5 25 / 22 36 GPIO TSNP-10-1 3) Isolation at 1.0/ 2.0 GHz; 6) Control Interface; 20 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.3.6 Band-selection Switches in a Differential Configuration The following figure shows the transceiver with differential inputs of the band-selection function with a DPDT switch in a differential configuration. Diversity Switch B3L Diversity Antenna Differential Input B1&B8 DPDT B3L B1 B7L High Band Transceiver IC DPDT B20L B20L Low Band Example of band-selection switches in a differential configuration RF CMOS DPDT Switches Product Type App. Note Supply [V] Vctrl1) [V] IL2) [dB] Isolation3) [dB] Pin,max4) [dBm] Ctrl.5) Int. Package BGS22WL10 DPDT AN302 2.4…3.6 1.2…VDD 0.33/0.39 38/28 30 GPIO TSLP-10-1 BGS22W2L10 DPDT AN308 2.4…3.6 1.2…VDD 0.22/0.39 35/27 24 GPIO TSLP-10-1 Notes: 1) Digital Control Voltage (logic high); 4) Maximum input power; 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 5) Control Interface; 3) Isolation at 1.0/ 2.0 GHz from RFin to RF port; 6) Please visit www.infineon.com/rfswitches for alternative devices. 21 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.4 Antenna Tuning Switches With a global increase for data transfer rate requirements in mobile communications, the need for higher bandwidth is ever increasing. To counter this need, more and more frequency bands are being defined by the 3rd Generation Partnership Project (3GPP) consortium. Consequently, the LTE-Advanced standard specifies 44 LTE frequency bands which can be used to transfer mobile signals. Due to these stringent requirements, a mobile phone antenna should be able to achieve good performance in several frequency bands. Hence there is a growing need to tune an antenna according to the selected frequency band. This is where antenna tuning concept gains importance. In addition, antenna tuning improves antenna radiation efficiency as well as the Total Radiated Power (TRP). This reduces the stress on the antenna driving hardware on the transmitter side and increases sensitivity on the receiver side. Antenna tuning devices based on Infineon’s CMOS switch technology in mobile phones allow the use of smaller antennas and/or broader frequency range. There are two types of antenna tuning: antenna aperture tuning and antenna impedance matching. 2.4.1 Antenna Impedance Matching Antenna impedance matching is carried out at the antenna feed point as shown in the figure below. Using this type of antenna tuning, forward power to the antenna can be optimized by matching the antenna input impedance to 50 ohms. This improves antenna performance by optimizing forward power to the antenna, but has no effect on the antenna characteristics (resonant frequency and radiation efficiency). Hence this type of antenna tuning is generally not preferred. Antenna impedance matching 22 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.4.2 Antenna Aperture Tuning More widely used antenna tuning technique is antenna aperture tuning. This type of antenna tuning effectively changes the characteristics of the antenna and in-turn improves antenna radiation efficiency and the Total Radiated Power (TRP). Hence this kind of antenna tuning is key focus of Infineon and is shown in the figure below. Antenna aperture tuning 2.4.3 System Approach to Aperture Tuning At Infineon, complete antenna-tuning solutions are provided to the customers, using our antenna-tuning switches. There are two approaches that are used for antenna tuning. The more common approach is to use antenna S-parameters. Another more recently introduced approach uses antenna dimensions to tune the antenna. These approaches are explained in the following sections in detail. There are two ports on a standard mobile phone Planar Inverted F antenna (PIFA), namely the Feed port and the Tuning port as shown in the figure below. The antenna-tuning switch with matching elements (capacitor/inductor) is placed on the tuning port of the antenna. System diagram for antenna aperture tuning 23 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems Aperture tuning using antenna S-parameters In this approach, the two port antenna S-parameters are used to tune the PIFA antenna. The S-parameters are measured and then imported into the circuit simulator. Using these S-parameters, the tuning circuit is created as shown in the circuit diagram below. Aperture tuning using antenna dimensions In this approach the customer provides the antenna dimensions. The antenna layout is created and simulated using a 3D Electro-Magnetic (EM) simulator. S-parameters are then extracted and the antennatuning circuit is created using the same approach that was described in the previous section. The only major difference between this approach and the previous approach is that here, the antenna S-parameters are extracted from the EM simulations and circuit elements are co-simulated with the EM simulation as shown below. 24 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.4.4 Key Parameters of Antenna Tuning Switches Since antenna-tuning switches are a modified version of standard switches, the basic design challenges of standard switches apply to antenna-tuning switches as well. In addition there are some special characteristics that are important for mobile phone antenna tuning. These are explained in this section. On Resistance (RON) The Ron of an antenna-tuning switch is one of its main differentiating features. The lower the Ron is, the better the switch performs. As an antenna-tuning switch is directly connected to the antenna, higher Ron means higher loss and lower quality factor (Q-factor). Infineon’s antenna-tuning switches have very low Ron, ranging from 0.4 ohm to 1.6 ohm in each RF port. Off Capacitance (COFF) COFF is also one of the key features of an antenna-tuning switch. A higher COFF results in a large highfrequency band loss and also results in self-resonances. Thus for better performance, a lower COFF is important for an antenna-tuning switch. Infineon’s antenna tuning switches have a very low COFF, in the range of 120 fF – 200 fF. Maximum RF Voltage (VRF) Depending on the antenna design, the impedance of the antenna varies with frequency. High impedance of the antenna results in a high VRF across the antenna-tuning switch. Generally, the voltage generated is much higher than the specified VRF for a standard switch. Hence Infineon’s antenna-tuning switches have higher VRF handling capacity to cater to the special requirements for antenna tuning. Infineon’s antenna-tuning switches are therefore rated up to 36 V to handle such high-stress conditions. RF CMOS Switches for Antenna Tuning Product Type App. Note Supply [V] Vctrl1) [V] IL2) [dB] Isolation3) [dB] Ron4) [Ω] COFF5) [fF] Pin,max6) [dBm] Package BGSA11GN10 Dual SPST on request 1.8…3.6 0…2.85 0.16/0.25 23/17 0.79 250 39 TSNP10-1 BGSA12GN10 SPDT on request 1.8…3.6 0…2.85 0.25/0.32 30/23 1.6 120 39 TSNP10-1 BGSA13GN10 SP3T on request 1.8…3.6 0…2.85 0.2…0.8/0.29. .0.44 26/20 0.8/1.4/1.6 300/160/1 20 39 TSNP10-1 BGSA14GN10 SP4T on request 1.8…3.6 0…2.85 0.26/0.37 31/25 1.6 120 39 TSNP10-1 Notes: 1) Digital Control Voltage; 2) IL = Insertion Loss at 1.0 / 2.0 GHz (depending on RF Port); 4) In ON state (RF1 / RF2 / RF3); 5) In OFF state (RF1 / RF2 / RF3); 7) Please visit www.infineon.com/rfswitches for alternative devices. 25 3) Isolation at 1.0 / 2.0 GHz; 6) Maximum input power; Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.5 PIN Diode Switches An alternative device compared to CMOS or GaAs switch is the high-performance PIN diode available from Infineon Technologies. For less complex RF circuits such as triple- and quad-band GSM/EDGE phones, PIN diodes are a good choice. PIN diodes can be used for switching in mobile phones if there is a requirement for much lower IMD generation. The following sections describe some switch solutions based on Infineon’s PINswitch diodes for cost-effective phones or base stations. Low-barrier Schottky power-detection diodes are used for precise output power control after the power amplifier. This helps the transceiver IC to monitor the correct information about any mismatches between the mobile phone antenna and the environment, and to adjust the signal power accordingly. Key Features of PIN Diodes: Insertion Loss (IL) and Isolation IL is dependent on the low impedance state of the diode in forward bias. Isolation is a measure of the PIN diode switch’s performance in its open state. In a series diode switch, this is primarily dependent on the junction capacitance. These parameters are determined by the forward bias current and reverse voltage. Infineon’s diodes have low capacitance and low resistance which are optimized for applications where ultralow resistance is required. Switching Time The carrier life time in a PIN diode dominates the switching speed, i.e., the time required to switch the diode from a low-impedance forward bias state to a high-impedance reverse bias state. 26 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.5.1 Antenna Switch with PIN Diodes and Power Detection with Schottky Diodes PIN Diode Power Detector Power Detector λ/4 λ/4 PIN Diode PA PIN Diode PA PIN Diode TX GSM BB IC RX GSM RX DCS RX PCS BB IC TX DCS RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] CCL4) [ns] Package BAR90-02EL BAR90-02ELS TR146 AN197 1.3 3.0 0.8 10.0 0.25 1.0 750 TSLP-2-19 TSSLP-2-3 BAR64-02EL AN058 12.5 1 2.1 10 0.23 20 1550 TSLP-2-19 AN058 12.5 1 2.1 10 0.23 20 1550 SOT23 AN058 12.5 1 2.1 10 0.23 20 1550 SOT323 BAR64-04 BAR64-05 BAR64-06 BAR64-04W BAR64-05W BAR64-06W Notes: 1) D = Dual; T = Triple; Q = Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) The charge carrier life time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit www.infineon.com/rf-pin-diodes for alternative devices. RF Schottky Diodes for Power Detectors Product Application Note CT1) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [µA] @VR [V] BAT62-02V AN185 0.35 0 580 2 - - < 10 40 SC79 BAT15-02EL BAT15-02ELS on request 4 TSLP-2-19 TSSLP-2-3 Notes: 0.26 0 230 1 1) at 1 MHz; 2) Please visit www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices. 27 320 10 <5 Package Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.5.2 Ultra-Low-Harmonic-Generation Band Switch with PIN Diodes ANT ICTRL1 ICTRL2 Port2 TX/RX Port1 TX/RX PIN Diodes PIN Diodes RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] CCL4) [ns] Package BAR64-02EL AN058 12.5 1 2.1 10 0.23 20 1550 TSLP-2-19 AN058 12.5 1 2.1 10 0.23 20 1550 SOT23 AN058 12.5 1 2.1 10 0.23 20 1550 SOT323 BAR64-04 BAR64-05 BAR64-06 BAR64-04W BAR64-05W BAR64-06W Notes: 1) D = Dual; T = Triple; Q = Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) The charge carrier life time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit www.infineon.com/rf-pin-diodes for alternative devices. 28 Application Guide for Mobile Communication High-/Medium-Power Switches for Mobile Phones and Wireless Systems 2.5.3 Antenna Switching with PIN Diodes (I) ANT 1 ANT RX ANT 2 RX PIN Diode PIN Diode STUB PIN Diode Antenna selection 2.5.4 Antenna effective length modification Antenna Tuning with PIN Diodes (II) ANT ANT LPF RX LPF RX LNA (opt.) LNA (opt.) PIN Diodes PIN Diodes Tunable antenna with moderate IMD generation 2.5.5 Tunable antenna with low IMD generation Bypass Path for Low Noise Amplifiers LNA PIN Diodes RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] CCL4) [ns] Package BAR90-02EL BAR90-02ELS TR146 AN197 1.3 3.0 0.8 10.0 0.25 1.0 750 TSLP-2-19 TSSLP-2-3 Notes: 1) D = Dual; T = Triple; Q = Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) The charge carrier life time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit www.infineon.com/rf-pin-diodes for alternative devices. 29 Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers 3 High-sensitivity Mobile RF Front-End with Low Noise Amplifiers Infineon Technologies is one of the leading companies for Low Noise Amplifiers (LNAs) with broad product portfolio. The LNAs and LNA banks are based on Infineon’s Silicon Germanium Carbon (SiGe:C) bipolar technology and include built-in Electro-Static Discharge (ESD) protection of 2kV Human Body Model (HBM) even at the input pins. A block diagram of a 2G (Global System for Mobile Communication (GSM)/ Enhanced Data Rates for GSM Evolution (EDGE)) and 3G/4G modem (Universal Mobile Telecommunications System (UMTS)/ Long-Term Evolution (LTE)) for a smartphone Radio Frequency (RF) Front-End (FE) is shown below. It consists of a broadband antenna, a band-selecting antenna switch, 3G/4G duplexers, high/low band power amplifiers, Surface Acoustic Wave (SAW) filters and 3G/4G LNAs. The LNAs are located in the diversity and main antenna paths of the phone, and they can increase data rates, for example, by doubled data rate compared to solutions without LNAs under very weak signal strength environment. High linearity assures optimal signal reception even with poorly isolated antennas and long line losses between antennas and transceivers. Infineon’s Monolithic Microwave Integrated Circuit (MMIC) LNAs and LNA banks with their excellent low noise figure enhance the sensitivity of the RF modem by about 3 dB and offer system layout flexibility by suppressing noise contribution from losses of signal lines and from the SAW filters as well as the receiver. ANT Switch 2G Transceiver IC ANT Power Detector PA Antenna Tuner 3G/4G Transceiver IC Duplexer LNA Block diagram of a 2G/3G/4G modem 30 SAW Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers With the improved system noise figure on the receive path, Infineon’s new LTE LNAs can almost double smartphone data rates and improve the user experience. The product family consists of single-band LNA BGA7x1N6 and quad-band LNA Banks BGM7xxxx4L12 families. These products have ultra-low Noise Figure (NF), the exact gain and high linearity needed to help smartphone designers to overcome the challenges of LTE or 4G. There are three single-band LTE LNAs and six quad-band LNA bank families to address the required band configurations required for different world regions. Each letter in the series name denotes a different frequency band: L for low-band (0.7 GHz to 1.0 GHz); M for mid-band (1.7 GHz to 2.2 GHz); and H for highband (2.3 GHz to 2.7 GHz). For example, BGM7MLLM4L12 stands for a device that has two low-band LNAs (LNA 2 and LNA3), and two integrated mid-band LNAs (LNA 1 and LNA 4). They are shipped in RoHScompliant TSNP-6-2 or TSLP-12-4 plastic packages. The previous generation of the single-band LNA BGA7x1N7 and multiple-band LNA families, BGA735N16 and BGA748N16, have the bypass function to switch the gain of the LNA from 15 dB to about -7 dB. It helps the RF designers to implement RF FEs with more dynamic range in the input signal. Please visit www.infineon.com/rfmmic for more details on LNA solutions for mobile phone applications, or contact your local Infineon representative. 31 Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers 3.1 Key Challenges of LNAs in Mobile Applications Motivated by increasing demand for mobile broadband services with higher data rates and better quality of service, modern mobile technology has seen tremendous growth in recent years from 2G to 3G/3.5G HighSpeed Packet Access (HSPA), Evolved High-Speed Packet Access (HSPA+), 3.9G LTE and recently 4G LTEAdvanced. LTE-Advanced can support data rates of up to 1 Gbps. Such higher requirements are met by using advanced Multiple Input Multiple Output (MIMO) techniques and wider bandwidths up to 100 MHz enabled by Carrier Aggregation (CA). LTE-Advanced can support up to 5 bands of carrier aggregation by three component carrier aggregation scenarios: Intra-band contiguous, intra-band non-contiguous and interband non-contiguous aggregation. They present new challenges to RF FE designers, such as interference from co-existing bands and harmonic generation. Smart LTE LNAs with the following features can address these requirements to achieve outstanding performance. Low Noise Figure (NF): An external LNA or LNA module boosts the sensitivity of the system by reducing the overall NF. In addition due to the size constraint, the modem antenna and the receiver FE cannot always be placed close to the transceiver Integrated Circuit (IC). The path loss in front of the integrated LNA on the transceiver IC increases the system NF significantly. An external LNA physically close to the antenna can help to eliminate the path loss and reduce the system NF. The sensitivity can be improved by several dB, which means a significant increase in the connectivity range. High Linearity (1-dB compression point P1dB and 3rd-order intercept point IP3): An increased number of bands at the receiver input creates strong interference, leading to high requirements in linearity characteristics such as high input 1-dB compression point, 2nd intermodulation (IMD2) products and input IP3 performance. Low Power Consumption: Power consumption is even more important in today’s smartphones. The latest LTE-Advanced uses enhanced MIMO techniques with up to 8 streams for downlink and 4 streams for uplink. Infineon’s LNAs and LNA modules have low supply current and an integrated on/off feature that reduces power consumption and increases standby time for cellular handsets or other portable battery-operated wireless applications. High Integration and Simple Control Interface: The demand for size and cost reduction and performance enhancement with ease of use and low parts count has become very important in existing and future generation smartphones. Our MMIC LNAs are highly integrated with input and output either matched or prematched, built-in temperature and supply voltage stabilization, and a fully ESD-protected circuit design to ensure stable operation and a simple control interface. 32 Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers 3.2 Single-band LNAs and Multiple-band LNA Banks 3.2.1 Single-band LNAs LTE LNAs Diversity Switch B8&B40 BGA7H1N6 Diversity / Main Antenna B1&B2&B3 BGA7M1N6 3G/4G Transceiver IC Antenna Tuner B5,8 &B17&B29 BGA7L1N6 PCB Trace (high insertion loss) Three Single-band LNAs implemented in the diversity path Single-band LTE-A MMIC LNAs Application note Product AN351 AN364 AN404 AN350 AN371 AN405 AN349 AN365 AN406 TR1183 BGA7L1N6 BGA7M1N6 BGA7H1N6 Notes: Freq. Range [MHz] Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] 728-960 13.0 0.9 -6 -1 1.5…3.3 4.9 1805-2200 13.0 0.7 -3 7 1.5…3.3 2300-2690 13.0 0.7 -4 6 1.5…3.3 Package TSNP-6-2 4.9 TSNP-6-2 4.9 TSNP-6-2 Please visit www.infineon.com/ltelna for alternative devices. Single-band 3G/4G MMIC LNAs with Bypass Function Freq. Range [MHz] Gain2) [dB] NF 2) [dB] IP-1dB2) [dBm] IIP32) [dBm] Supply [V] Current2) [mA] Package BGA6L1BN61) 4) 700−1000 16.1/-1.8 0.6/1.8 -5/+8 +2/+23 1.5…3.3 5.6/0.09 TSNP-6-2 1) 4) Product BGA6H1BN6 1800-2700 14.3/-2.8 0.8/2.8 -6/+12 +3/+25 1.5…3.3 5.5/0.09 TSNP-6-2 1) 700-800 15.3/-9.9 1.1/9.9 -7/-12 -8/-2 2.8 4.8/0.5 TSNP-7-1 1) 700−1100 16/-8 1.05/9.9 -6/-10 -8/-1 2.8 4.8/0.5 TSNP-7-1 1) BGA711N7 1800−2650 17.0/-8 1.1/8.0 -8/-2 -2/+7 2.8 3.6/0.5 TSNP-7-1 BGA777N71) 2300−2700 16.0/-7.0 1.2/6.9 -10/-2 -2/+7 2.8 4.2/0.5 TSNP-7-1 BGA713N7 BGA751N7 Notes: 1) LNA with two gain modes (high-gain/low-gain); 2) Values in high-gain (HG) / low-gain (LG) mode; 3) Please visit www.infineon.com/ltelna for alternative devices. 4) On request 33 Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers 3.2.2 Multiple-Band LNA Banks LNA Bank BPF LNA1 from Duplexer LNA2 3G/4G Transceiver IC LNA3 LNA4 Quad-band LNA bank implemented in the main path Quad-band LTE-A LNA Banks (Product Details on Request) Freq. Range [MHz] Product BGM7MLLH4L12 1) BGM7LMHM4L121) BGM7HHMH4L121) BGM7MLLM4L121) BGM7LLHM4L121) BGM7LLMM4L121) Notes: 1805-2200 728-960 728-960 2300-2690 728-960 1805-2200 2300-2690 1805-2200 2300-2690 2300-2690 1805-2200 2300-2690 1805-2200 728-960 728-960 1805-2200 728-960 728-960 2300-2690 1805-2200 728-960 728-960 1805-2200 1805-2200 Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package 13.02) 0.62) 32) 5 1.5…3.32) 5.02) TSLP-12-4 13.0 0.8 1 8 1.5…3.3 5.5 TSLP-12-4 13.02) 0.62) 32) 52) 1.5…3.32) 5.02) TSLP-12-4 13.0 0.7 2 9 1.5…3.3 5.5 TSLP-12-4 13.0 0.7 2 8 1.5…3.3 5.5 TSLP-12-4 13.0 0.7 2 5 1.5…3.3 5.0 TSLP-12-4 1) On request; 2) Based on preliminary datasheet 3) Please visit www.infineon.com/ltelna for alternative devices; 34 Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers Triple-band 3G/4G MMIC LNA Bank with Bypass Function Product Freq. Range [MHz] Gain2) [dB] NF 2) [dB] IP-1dB2) [dBm] IIP32) [dBm] Supply [V] Current2) [mA] Package BGA735N161) 700-1000 1450−2000 2100−2700 16.5/-7.8 1.1/7.8 -6/-10 -11/-1 2.8 3.7/0.65 TSNP-16-1 Notes: 1) LNA with two gain modes (high-gain/low-gain); 2) Values in high-gain/low-gain mode; 3) Please visit www.infineon.com/ltelna for alternative devices. Quad-band 3G/4G MMIC LNA Bank with Bypass Function Product BGA748L161) Notes: Freq. Range [MHz] 700-1000 700-1000 1450−2000 2100−2700 Gain2) [dB] NF2) [dB] IP-1dB2) [dBm] IIP32) [dBm] Supply [V] Current2) [mA] Package 16.6/-8.0 1.1/8.0 -8/+2 -7/+15 2.8 4.0/0.75 TSNP-16-1 1) LNA with two gain modes (high-gain/low-gain); 2) Values in high-gain/low-gain mode; 3) Please visit www.infineon.com/ltelna for alternative devices. 35 Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers 3.3 LNA Multiplexer Modules for Carrier Aggregation Beside the single-band LNAs and quad-band LNA banks, there are three LNA Multiplexer Modules (LMMs): BGM15LA12, BGM15MA12 and BGM15HA12. Each device consists of a SP5T switch and a broadband LNA. With the five input pins the LMM can support five individual bands for single-carrier operation as well as carrier aggregation mode. Each input of BGM15LA12 can support different low-bands (0.7 GHz to 1.0 GHz); BGM15MA12 can support different mid-bands (1.7 GHz to 2.2 GHz); BGM15HA12 can support different highbands (2.3 GHz to 2.7 GHz). All these devices are programmable using RFFE MIPI. They are shipped in Restriction of Hazardous Substances (RoHS)-compliant ATSLP-12-1,-2,-3 plastic packages. Time-division duplexing (TDD)-mode LTE systems combined with Frequency-Division Duplexing (FDD)-mode LTE systems are steadily gaining importance. As end users continue to download more and more data anytime and anywhere, there is an increasing need for more bandwidth and an additional receiver channel called the “diversity path” in smartphones. In most current mobile phones, there is a second antenna for the diversity path. Diversity exploits the multipath propagation phenomenon of microwaves in order to enhance the reception of cellular signals. The diversity antenna is usually located far from the main antenna and the transceiver IC. The received signal therefore undergoes signal losses along the path from the diversity switch to the transceiver IC. It is necessary to use a LNA / LNA bank / LNA multiplexer module closer to the diversity switch to overcome this and enhance the sensitivity of the system. The LNAs/LNA banks/LNA multiplexer modules improve the receiver performance significantly by reducing the noise from the long route line between the diversity antenna and the transceiver IC, and compensating for the losses incurred due to the band-pass filter and NF of the transceiver. 36 Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers SAW DRx Antenna Switch B40 LNA B41 Diversity/ Main Antenna RX HB port B38 Infineon BGM15HA12 B7 Infineon BGS15MA B3 RX MB port B39 Infineon BGM15MA12 B20 RX LB port B12/17 Infineon BGS15MA B5/26 Infineon BGM15LA12 B8 LNA multiplexer module implemented in the diversity path LNA Multiplexer Modules for LTE-Advanced Applications Product Application note Freq. Range [MHz] Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGM15LA121) AN3731) 700-1000 15.0 1.1 -2.5 6.0 2.2-3.3 4.8 ATSLP-12-1 1700-2200 15.5 1.2 -9 6.0 2.2-3.3 4.7 ATSLP-12-2 2300-2700 14.4 1.2 -4 6.0 2.2-3.3 4.9 ATSLP-12-3 BGM15MA121) BGM15HA121) Notes: 1) On request; AN3741) TR11801) AN3751) TR11811) 2) Please visit www.infineon.com/ltelna for alternative devices. 37 Application Guide for Mobile Communication High-sensitivity Mobile RF Front-End with Low Noise Amplifiers 3.4 LNAs for 3.5 GHz TD-LTE Modems TD-LTE Bd 42 / 43 3.4 – 3.8 GHz BPF SPDT Switch LNA Balun TD-LTE Power Detector Transceiver IC PA BPF Balun RF MMIC LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGB707L7ESD TR171 14.3 1.3 -8 -5 2.8 5.4 TSLP-7-1 Note: Please visit www.infineon.com/rf-mmic for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP840FESD TR1129 17.5 1.1 -13 -3 3.0 15 TSFP-4 BFP843F AN315 18 1.2 -11 -3 3.0 14 TSFP-4 BFR843EL3 AN307 AN328 16 1.1 -11 -1 3.0 12 TSLP-3-9 Note: Please visit www.infineon.com/lna up to 12 GHz for alternative devices. RF CMOS TX/RX Switches Product Type App. Note BGS12PL6 SPDT AN319 Notes: 1) Digital control voltage; 3) 0.1dB compression point; 5) Control Interface; Supply [V] Vctrl1) [V] IL2) [dB] Isolation [dB] P-0.1dB3) [dBm] Pin,max4) [dBm] Ctrl.5) Int. Package 2.4…3.6 1.4…3.6 0.77 22 38 35 GPIO TSLP-6-4 2) IL = Insertion Loss; 4) Maximum input power; 6) Please visit www.infineon.com/rfswitches for alternative devices. 38 Application Guide for Mobile Communication Global Navigation Satellite Systems 4 Global Navigation Satellite Systems Global Navigation Satellite Systems (GNSSs) are among the fastest growing businesses in the electronic industry. Today, GNSSs include much more than the well-known GPS (Global Positioning System), which was introduced for civilian use more than a decade ago. Nations around the world are working on their own navigation satellite systems for strategic reasons and to offer improved user experience. Today, three GNSS systems are operational: the United States GPS, the Russian GLobal Orbiting Navigation Satellite System (GLONASS), and the Chinese Beidou System. The Galileo positioning system being developed by the European Union is expected to provide initial public service by 2016 and full functionality by 2020 using 24 operational satellites for commercial applications. From a civilian usage point, additional systems added to GNSS bring with them the advantages of increased satellite signal reception, increased coverage, higher precision, and the facility for additional features such as Search And Rescue (SAR). The most important market segments since 2008 are Personal Navigation Devices (PNDs) and GNSS-enabled mobile phones. The architecture and the performance of the Radio Frequency (RF) Front-End (FE) must be optimal in order to fulfill the strict requirements of the GNSS system. The main challenges for the growing GNSS-enabled mobile phone market are to achieve high sensitivity and high immunity defined by government regulations against interference of cellular signals for safety and emergency reasons. This means GNSS signals must be received at very low power levels (down to less than 160 dBm) in mobile phones in the vicinity of co-existing high-power cellular signals. In addition, portable and mobile phones must have excellent Electro-Static Discharge (ESD) robustness and low power consumption to ensure long battery usage time. Infineon Technologies is the market leader in GNSS Low Noise Amplifiers (LNAs) for navigation applications in Personal Navigation Devices (PND) and cellular products. Infineon offers a complete product portfolio to all customers designing high-performance flexible RF front-end solutions for GNSSs: - Low Noise Amplifiers (LNAs): Infineon offers a wide range of products such as high-performance Monolithic Microwave Integrated Circuits (MMICs) as well as cost-effective and high-end RF transistors - Front-End Modules (FEMs): Infineon offers the world’s smallest GNSS FEMs with LNAs and band-pass filter(s) integrated into a single tiny package with well-optimized performance for navigation features in mobile phones - Transient Voltage Suppression (TVS) Diodes: Infineon devices can protect GNSS antennas reliably up to 20 kV - RF Switches: Infineon switches allow for diversity architecture with active antennas 39 Application Guide for Mobile Communication Global Navigation Satellite Systems Infineon’s GNSS LNA and FEM products have low Noise Figure (NF), high gain, high linearity, high levels of ESD protection, and low power consumption to satisfy the increasing requirements of GNSS systems. Infineon offers LNAs optimized for high linearity and high gain. Our latest GNSS LNA products covering all current GNSS systems include BGA924N6 and BGA824N6 with very low NF and high Out-of-Band (OoB) 3rdorder intercept point (IP3) to enhance interference immunity. BGA925L6 and BGA825L6 are two of the smallest GNSS LNAs in the world. They have low NF and high OoB performance, and they work under extreme jamming conditions. BGA725L6 is one of the smallest GNSS LNAs with high gain and low noise. Designed for various GNSS antenna positions in mobile phones, various GNSS FEM products are released with the following two topologies: - Surface Acoustic Wave (SAW)-Filter/LNA Topology: Enables flexibility in the placement of the GNSS antenna without degrading the GNSS performance. - Notch Filter/SAW-Filter/LNA Topology: With an additional integrated notch filter in front of the GNSS FEM, the GNSS is enhanced to reject mobile jammer signals, especially for LTE Band-13, to ensure GNSS reception even with weak GNSS and high jammer signal conditions. All Infineon GNSS FEM products offer an ESD robustness higher than 6 kV at the RF input pin, tested with the IEC61000-4-2 contact discharge standard. Please visit www.infineon.com/gnss and www.infineon.com/rf-nav.frontend for more details on products for navigation in mobile phones and portable devices, or contact your local Infineon representative. 40 Application Guide for Mobile Communication Global Navigation Satellite Systems 4.1 Key Features of GNSS Front-End Components 4.1.1 Key Features of GNSS Low Noise Amplifiers (LNAs) Low Noise Figure & High Gain The power levels of satellite signals received by a GPS/GNSS receiver are as low as -160 dBm. Such systems must be very sensitive. An external LNA with low NF and high gain is required to boost the sensitivity of the system and Time-To-First Fix (TTFF). High Linearity In modern mobile phones, GNSS signals coexist with strong interfering cellular signals. The cellular signals can mix to produce intermodulation products in the GNSS receiver frequency band. To enhance interference immunity of the GNSS systems, LNAs with high linearity characteristics e.g. IP3 and P1dB are required. Low Current Consumption Power consumption is an important feature in many GNSS systems that are mainly battery-operated mobile devices. Infineon’s LNAs have an integrated power on/off feature which provides for low power consumption and increased stand-by time for GNSS handsets. Moreover, the low current consumption (3.6 mA) makes Infineon’s LNAs suitable for portable technology such as GNSS receivers and mobile phones. 4.1.2 Key Features of GNSS Surface Acoustic Wave (SAW) Filters Low Insertion Loss The pre-filter should not contribute to losses in the system since it is the first block after the antenna in the receiver chain. Losses in the pre-filter will impact the NF of the receiver system significantly. Infineon’s SAW filters introduce an insertion loss of only 1 dB in the pass band. High Out-of-Band Rejection The strong cellular signals that coexist in a mobile phone can drive the GNSS LNA into saturation. These signals can be filtered out with a pre-filter and post-filter to prevent interference in later stages. The SAW filter should have high OoB rejection. Infineon’s SAW filters have high OoB rejection of about 34 dB. High Linearity Capability It has been verified that both the LNA and the SAW filter can introduce OoB intermodulation products of mobile signals that are within the GNSS bands. Therefore it is a key requirement for a GNSS SAW filter to have high linear surface acoustic resonators, especially at the input stage resonators of the SAW filter. 41 Application Guide for Mobile Communication Global Navigation Satellite Systems 4.2 System Challenges for Modern GNSS Reception in Mobile Devices GNSS receivers for mobile or handheld devices are always at risk of strong interference from high-power cellular signals. Due to the coexistence of GNSS and cellular services, there is a strong coupling of the Digital Cellular Service (DCS)/ Personal Communications Services (PCS) and cellular (Global System for Mobile Communication (GSM)/ Code Division Multiple Access (CDMA)/3G/ Long-Term Evolution (LTE)) signals to the GPS receiver. The performance of a standard integrated GNSS receiver chip cannot meet the specifications required for modern-day systems. An external RF FE is essential to achieve this required performance. The most important prerequisites for the FE of a GNSS receiver are low NF and sufficient amplification of the desired signal together with high attenuation of the jammer signals. We need an external LNA with low NF and high gain preceded by a band-pass filter with low Insertion Loss (IL) and high OoB attenuation to achieve this. GNSS receiver sensitivity enhancement with an external LNA In the circuit chain of a receiver, the NF of the first stage LNA dominates the overall system NF. Consider a GNSS receiver IC with NF of 2.3 dB. By adding Infineon’s LNA BGA824N6 with NF 0.6 dB and Gain 17 dB to the front of the receiver IC, the NF Fsys of the receiver system can be expressed by using Friis Formula: 𝐹sys = 𝐹LNA + 𝐹receiver −1 𝐺LNA Using the above equation, 𝐹sys = 1.16. Therefore, 𝑁𝐹sys = 10 log 𝐹sys = 0.66 dB. The sensitivity of the GNSS system can thus be improved by 1.6 dB through the external LNA. The NF of the system is dominated by the NF and gain of the first stage LNA. Adding a LNA with very low NF and excellent linear performance improve the overall receiver sensitivity, which leads to low TTFF and more GNSS coverage in real field applications for the end user. Noise Figure degradation due to high power of jammer signal High power interfering jammer signals may leak into the GNSS receiver and affect the receiver’s sensitivity by overdriving the receiver’s LNA. This presents a major challenge to RF FE designers to maintain the receiver’s sensitivity for weak incoming GNSS signals. It is important to use an external LNA with very good noise performance in the presence of strong interfering signals. The LNA needs to exhibit outstanding OoB P1dB performance against jammer signals so that it is not desensitized. The following figure shows the NF degradation of Infineon’s LNA BGA824N6 due to high-power incoming jammer signals. 42 Application Guide for Mobile Communication Global Navigation Satellite Systems 1,4 1,2 Noise figure Degradation [dB] 1 0,8 0,6 1555MHz 0,4 1570MHz 1580MHz 0,2 1606MHz 0 -30 -25 -20 -15 -10 -5 Jammer Power at 1710 MHz [dBm] Noise figure desensitization effect caused by jammer signal Out-of-band interference Because GNSS and cellular systems coexist in a compact area in a mobile phone, coupling from cellular transmitter to GNSS receive path results in OoB intermixing of cellular signals in FE devices. For example, GSM 1712.7 MHz and UMTS 1850 MHz produce third-order intermodulation products at GPS frequencies. This effect desensitizes the GPS receiver and decreases its performance. OoB measurements are used to quantify this. The OoB IIP3 can be calculated as follows. Out-of-band Input 𝐼𝑃3 = 𝑃1IN + [𝑃2IN − (𝐼𝑀3out_GPS − 𝐺𝑎𝑖𝑛at GPS )]⁄2 The following figure demonstrates the OoB IP3 measurement. A GSM signal of frequency f1IN = 1713 MHz and power P1IN = -20 dBm and UMTS signal of frequency f2IN = 1851 MHz and power P2IN = -20 dBm are used. The 3rd-order intermodulation product, 2×f1IN – f2IN, is located at the GPS band. Using the above equation, the OoB IIP3 can be calculated as 𝐼𝐼𝑃3 = −20 + [−20 − (−64.8 − 15.81) )]⁄2 = 10.3 dBm, (Note: 1) Gain at GPS is from BGA925L6.) which is well above the specified value for mobile GNSS applications, e.g. about +7 dBm. 43 Application Guide for Mobile Communication Global Navigation Satellite Systems Out-of-band IIP3 measurement LTE Band 13 interference The 2nd harmonic of LTE band-13 (700 MHz) is located in the GNSS band at 1575 MHz. The following block diagram depicts the interference measurement of LTE band-13 with the GNSS band of 1575 MHz. H2 of LTE band 13 1575.52 MHz -80 dBm LTE band 13 787.76 MHz +25 dBm 3G/4G Transceiver IC 9 dB worst case Isolation GNSS Receiver IC H2 of LTE band 13 1575.52 MHz H2 of LTE band 13 1575.52 MHz -89 dBm In this example, considering a worst-case isolation of 9 dB between the both antennas, jammer frequency fLTE = 787.76 MHz, and the power of the second harmonic fH2 = 1575.52 MHz is -89 dBm at the GPS antenna. Infineon MMICs and FEMs provide very high OoB signal rejection along with high input compression points. As an example, BGM1043N7 shows a rejection of -70 dBc. Please refer to Infineon’s application note AN287 for more information. 44 Application Guide for Mobile Communication Global Navigation Satellite Systems 4.3 RF Front-End Devices for GNSS GPS: 1575.42 MHz GLONASS: 1598.0625 – 1609.3125 MHz Galileo & Beidou (北斗): 1559.052 – 1591.788 MHz BPF LNA Amp BPF Mixer BPF Signal Processing ESD Diode LO GNSS Receiver RF MMIC LNAs Application Note Gain1) [dB] NF1) [dB] IP-1dB1) [dBm] IIP31) [dBm] Supply [V] Current1) [mA] Package AN265 AN266 AN267 AN274 15.8 15.5 15.6 14.5 0.7 1.0 0.8 2.0 -7 -9 -9 -5 1.7 -5 -5 -2 1.5…3.6 5.0 TSLP-6-2 AN297 AN304 AN3182) AN325 AN326 AN334 17.1 15.9 -17.0 15.4 16.4 0.6 1.7 -0.6 2.0 0.9 -5.7 -5.3 --7 -5.2 -8.7 6.5 -1.1 -+2 -4.9 -7.1 BGA725L6 AN280 19.9 0.7 -15 -6 1.5…3.6 3.9 TSLP-6-2 BGA524N6 AN346 19.6 0.6 -12 -8 1.5…3.6 2.5 TSNP-6-2 Package Product BGA925L6 BGA825L6 BGA824C2) BGA824N6 Notes: 1.5…3.6 1.5…3.6 5.0 5.2 -3.9 4.1 4.0 TSLP-6-3 FWLP-6-1 TSNP-6-2 1) Supply voltage at 2.8 V and frequency at 1575 MHz; 2) on request; 3) Please visit www.infineon.com/gnss for alternative devices. RF Transistor LNAs Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] AN120 19.7 0.8 -17 0 1.8 9.6 BFP640ESD BFP640FESD AN194 16.5 0.8 -16 +1 2.1 7.5 BFP640F AN128 15.2 0.9 -13 0 2.1 8.0 TSFP-4 BFP405 AN149 15.3 1.6 -23 -5 1.8 2.6 SOT343 Product BFP740ESD BFP740FESD BFR740L3RH Note: SOT343 Please visit www.infineon.com/lna up to 12 GHz for alternative devices. 45 TSFP-4 TSLP-3-9 SOT343 TSFP-4 Application Guide for Mobile Communication Global Navigation Satellite Systems TVS Diodes for Antenna ESD Protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 med. PRF AN392 ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD101-B102EL/02ELS med. PRF AN327 ±5.5 ±12 ±18@±8 ±30@±16 1.5 - - 0.10 1 TSLP-2-20 TSSLP-2-4 ESD103-B102EL/02ELS high PRF AN327 ±15 ±10 ±36@±8 ±48@±16 1.8 - - 0.10 1 TSLP-2-20 TSSLP-2-4 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 46 Application Guide for Mobile Communication Global Navigation Satellite Systems 4.4 Integrated Front-End Modules for GNSS GPS: 1575.42 MHz GLONASS: 1598.0625 – 1609.3125 MHz BPF LNA BPF Amp Mixer BPF Signal Processing FEM ESD Diode GNSS Receiver LO RF MMIC FEMs (DC and In-Band Parameters) Product Application Note BGM1043N7 AN283 AN286 AN287 AN294 BGM1034N7 Notes: AN268 AN269 FEM Conf. Gain1) [dB] NF 1) [dB] IP-1dB 1) [dBm] IIP3 1) [dBm] Supply [V] Current1) [mA] SAW+LNA 15.1 14.8 14.6 14.8 1.5 1.6 1.7 1.6 -6.3 -7.2 -6.5 -6.5 -6.0 -6.4 -6.4 -5.9 1.5…3.6 4.4 4.1 4.2 4.1 SAW+LNA 17.0 1.7 -13.1 -8.7 1.5…3.6 4.2 IMD2 3) [dBm] IIP3 4) [dBm] Package 1) Supply voltage at 2.8 V and frequency at 1575 MHz. RF MMIC FEMs (Out-of-Band Parameters) Jammer signal rejection [dBc] 1) 1800 MHz 2400 MHz IP-1dB 2) [dBm] 49 49 44 52 43 50 47 47 49 31/33 31/33 30/32 30/32 -50 -32 -70 -84 63 63 64 64 TSNP-7-10 56 50 63 22 -5) 65 TSNP-7-10 Product Application Note 900 MHz BGM1043N7 AN283 AN286 AN287 AN294 BGM1034N7 AN268 AN269 Notes: 1) Rejection is defined as [Gain at 1575 MHz] – [Attenuation at stop band frequency]; 2) IP-1dB is measured at 900 and 1710 MHz; 3) IMD2 is measured at 1575 MHz with fin = 787.5 MHz with Pin = +15 dBm; 4) IIP3 is measured with f1 = 1713 MHz and f2 = 1850 MHz with P1/P2 = +10 dBm; 5) On request; 6) All Infineon GNSS FEM products offer ESD robustness higher than 6 kV at RF input pin according to IEC61000-4-2 contact discharge standard; 7) Please visit our www.infineon.com/rf-nav.frontend for alternative devices. TVS Diodes for Antenna ESD Protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 med. PRF AN392 ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD101-B102EL/02ELS med. PRF AN327 ±5.5 ±12 ±18@±8 ±30@±16 1.5 - - 0.10 1 TSLP-2-20 TSSLP-2-4 ESD103-B102EL/02ELS high PRF AN327 ±15 ±10 ±36@±8 ±48@±16 1.8 - - 0.10 1 TSLP-2-20 TSSLP-2-4 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 47 Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5 Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5.1 Wireless-LAN Applications Wireless Local Area Network (WLAN) or Wi-Fi is one of the most important connectivity functions in notebooks, smartphones, and tablet PCs. Wi-Fi conforming to IEEE 802.11b/g/n at 2.4 GHz has been widely implemented over many years. Today Wi-Fi is not only used for high-data-rate access to the internet, but also in different applications such as home entertainment with wireless high-quality multimedia signal transmission such as Wireless High-Definition Multimedia Interface (HDMI) in TV sets and DVD players, etc. The crowded WLAN networks running at 2.4 GHz often have a lot of interference; as a result, Wi-Fi applications running at 5 to 6 GHz per IEEE 802.11a/ac/n are becoming more common. Wireless@Home devices such as home networking notebooks, mass data storage drives, and printers often now use 5-6 GHz Wi-Fi for high-speed wireless connections. With the arrival of new wireless devices such as tablets, Voice over Internet Protocol (VoIP) devices, game consoles, ebooks etc., the requirements for wireless data quality have become more stringent than ever. New WLAN standards are being developed to cater to these high-throughput requirements by using i) ii) iii) Higher-order modulation schemes Wider channel bandwidth Multiple data streams The 802.11ac is an extension of 802.11n, providing a minimum of 500 Mbps single link and up to 1 Gbps overall throughput, running in the 5 GHz band. The draft 802.11ad provides up to 7 Gbps throughput using approximately 2 GHz of spectrum at 60 GHz over a short range. The following table shows the evolution of IEEE 802.11 standards. 48 Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) Summary of 802.11 a/b/g/n/ac/ad standards Standard 802.11 802.11b 802.11g Frequency Range Data Rate [GHz] [Mbps] 2.4 – 2.5 2.4 – 2.5 2.4 – 2.5 2 11 54 Count of Channels Channel Bandwidth Modulation Scheme MIMO Streams [MHz] 1) 20 DSSS, FHSS 1 1) 20 DSSS 1 20 OFDM, DSSS 1 OFDM 4 14 14 1) 14 1) 802.11n 2.4 – 2.5 54 up to 14 20, 40 802.11a 5.1 – 5.9 54 422) 20 802.11n 5.1 – 5.9 up to 422) 20, 40 OFDM 802.11ac 5.1 – 5.9 up to 422) 20, 40, 80, 160 256QAM 802.11ad 57 - 64 Notes: 1) Three non-overlapping channels; 600 (4x4 MIMO) 1300 (3 streams) up to 7000 50,100, 250 MHz -- up to 4 GHz 2) Twelve non-overlapping channels. 49 OFDM 64QAM 16QAM 1 4 up to 8, MU-MIMO -- Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5.1.1 Key Features of WLAN Rx Front-End Devices Key performance metrics for any WLAN application are speed of data transfer, and coverage. These factors are greatly influenced by transmitted power, receiver sensitivity, noise, and interference. Low Noise Figure A Wi-Fi router has to receive relatively weak signals from Wi-Fi enabled devices such as mobile phones. Therefore, it should have high sensitivity to detect a weak signal in the presence of strong interfering signals. The sensitivity of the receiver can be improved by using a low-noise amplifier as the first block of the receiver Front-End (FE) to reduce the Noise Figure (NF) of the overall system. High Linearity WLAN systems are subject to co-channel interference and also interference from strong co-existing cellular signals. High linearity characteristics such as Input 3rd Intercept Point (IIP3) and input compression point are required to improve an application's ability to distinguish between desired signals and spurious signals received close together. Infineon offers a wide Radio Frequency (RF) product portfolio for Wi-Fi, including: - Discrete transistors & Monolithic Microwave Integrated Circuit (MMIC) Low Noise Amplifiers (LNAs) Power detection diodes RF Complementary Metal-Oxide-Semiconductor (CMOS) and pin diode switches For these kinds of high-data-rate wireless communication systems, it is essential to ensure the quality of the link path. Major performance criteria of this equipment must be met with regard to sensitivity, signal strength, and interference immunity with enough link budgets. In addition, Infineon also offers RF Electro-Static Discharge (ESD) protection diodes. The ESD protection diode series, ESD108-B1-CSP0201 and ESD103-B1-02EL/02ELS, have a line capacitance value of only 0.2 pF and 0.1 pF respectively and can protect the system from ESD strikes up to 8 kV contact discharge according to the IEC-61000-4-2 standard. 50 Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5.1.2 Dual-Band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n) Front-End 2.4 GHz LNA Dual-Band WLAN: 2.4 – 6 GHz RX Diplexer RXg RXa SPDT Switch 5 GHz LNA Transceiver IC TXg 2.4 GHz PA ESD Diode TX Diplexer Power Detector 5 GHz PA TXa WLAN Application Example 1: Dual-band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n) FE RXg 2.4 GHz LNA w. bypass Dual-Band WLAN: 2.4 – 6 GHz SPDT Switch ESD Diode RXa 5 GHz LNA w. bypass TX Diplexer 2.4/5 GHz WLAN Transceiver IC TXg 2.4 GHz PA Power Detector 5 GHz PA TXa WLAN Application Example 2: Dual-band (2.4-6.0 GHz) WLAN (IEEE 802.11a/b/g/n/ac) FE 51 Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5.1.3 MIMO Configurations for WLAN (IEEE 802.11b/g/n and IEEE 802.11a/n/ac) Applications IEEE 802.11n at 2.4 GHz and at 5 GHz bands introduced the Multiple Input Multiple Output (MIMO) topologies in advanced high-data-rate WLAN applications. MIMO exploits multipath propagation known as spacedivision multiplexing. The transmitter IC multiplexes a data stream into multiple spatial streams, and transmits each spatial stream through separate antennas to corresponding antennas on the receiving end. Doubling the number of spatial streams from one to two effectively doubles the data rate. However, increased power consumption due to the presence of multiple transmitter and receiver chains presents a major challenge in optimizing the battery life of the device. Infineon’s products offer very low power consumption, thus optimizing the battery life of the device. The following block diagram illustrates a dual-band WLAN MIMO FE. Please refer to the previous sections for the corresponding products for each function block. 2.4 GHz LNA RX Diplexer RXg WLAN: 2.4 / 5 GHz RXa SPDT Switch 5 GHz LNA TXg 2.4 GHz PA ESD Diode TX Diplexer . . . n = 1, 2, 3… Power Detector 5 GHz PA . . . TXa nx n 2.4/5 GHz WLAN Transceiver IC RXg WLAN: 2.4 / 5 GHz RXa TXg TXa WLAN MIMO Application Example: Dual-band WLAN 2.4 & 5 GHz IEEE 802.11b/g/n and 802.11a/n/ac NxN MIMO FE with dual-band antennas, dual-band TX and RX paths using dual-band LNAs 52 Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5.1.4 WLAN (IEEE 802.11a/b/g/n) Front-End Devices RF MMIC LNAs Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGA6H1BN61) 1800-2700 14.3/-2.8 0.8/2.8 -6/+12 +3/+25 1.5…3.3 5.5/0.09 TSNP-6-2 BGA7H1N6 AN365 13.0 0.7 2 5 1.5…3.6 4.9 TSNP-6-2 BGA777N7 AN370 16.4/-7.0 1.2/7.0 -9/-1 -3/+5 2.8 4.4/0.5 TSNP-7-1 BGB741L7ESD AN207 TR102 17.5 18.7 1.5 1.1 -4.0 -6.7 -1.2 +2 3.0 10.0 10.8 TSLP-7-1 BGA622L7 AN089 12.6 1.3 -15 -4 2.8 5.4 SOT343 AN207 12 2.0 -1 8.5 3.0 6 TSLP-7-1 13.3 2.3 -6 -4.3 2.8 3.2 TSLP-7-1 Product 2.4 GHz LNA 5 GHz LNA BGB741L7ESD 1) BGB707L7ESD Notes: TR1012 1) On request; 2) Please visit www.infineon.com/rf-mmic for alternative devices. RF CMOS Switches Type App. Note Supply [V] Vctrl1) [V] IL2) [dB] Isolation [dB] P-0.1dB3) [dBm] Pin,max4) [dBm] Ctrl.5) Int. Package BGS12AL7-4 BGS12AL7-6 SPDT AN175 2.4…3.6 1.4…3.6 0.5 25 > 21 21 GPIO TSLP-7-4 TSLP-7-6 BGS13SN9 SP3T on request 1.8…3.3 1.35…Vdd 0.33 / 0.35 30 / 27 >30 30 GPIO TSNP-9-2 1.8…3.3 1.4…3.3 0.3/0.56) 32/306) >30 30 GPIO TSNP-6-2 Product 2.4 GHz Switches 2.4 GHz and 5 GHz Broadband Switches BGS12SN6 Notes: SPDT AN332 1) Digital Control Voltage; 3) 0.1 dB compression point; 6) Value at 2.4 GHz/5 GHz; 2) IL = Insertion Loss; 4) Maximum input power; 5) Control Interface; 7) Please visit www.infineon.com/rfswitches for alternative devices. RF Schottky Diodes for Power Detectors Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [µA] @VR [V] BAT62-02V AN185 0.35 0 580 2 - - < 10 40 SC79 BAT15-02EL BAT15-02ELS on request 4 TSLP-2-19 TSSLP-2-3 Product1) Notes: 0.26 0 230 1 1) D = Dual; T = Triple; Q = Quadruple; 2) at 1 MHz; 3) Please visit www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices. 53 320 10 <5 Package Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) RF Transistor LNAs Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP842ESD AN322 19.3 0.8 -9.9 2.6 3.0 11.9 SOT343 BFR840L3RHESD AN339 20.8 1.38 -18.6 -7.2 3.0 9.0 TSLP-3-9 BFR740L3RH AN173 18.0 0.7 -10 +1 3.0 14.7 TSLP-3-9 BFR840L3RHESD AN281 AN290 15.1 1.0 -8 +2 3.0 9.4 TSLP-3-9 BFR740L3RH AN170 14.3 1.3 -5 +4 3.0 12.9 TSLP-3-9 Product 2.4 GHz LNA 5 GHz LNA 2.4 GHz & 5 GHz Broadband LNA BFR843EL3 AN307 18.5/13.3 1.0/1.3 -12.1/-7.5 -1.9/2.8 3.0 12.2 TSLP-3-9 BFR840L3RHESD AN292 18.5/15 1.1/1.4 -15/-12.6 -5.5/0.3 3.0 9.4 TSLP-3-9 Note: Please visit www.infineon.com/lna up to 12 GHz for alternative devices. TVS Diodes for Antenna ESD Protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 med. PRF AN392 ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 ESD101-B102EL/02ELS med. PRF AN327 ±5.5 ±12 ±18@±8 ±30@±16 1.5 - - 0.10 1 TSLP-2-20 TSSLP-2-4 ESD103-B102EL/02ELS high PRF AN327 ±15 ±10 ±36@±8 ±48@±16 1.8 - - 0.10 1 TSLP-2-20 TSSLP-2-4 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 54 TSLP-2-20 TSSLP-2-4 Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5.2 Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5.2.1 LTE-U and LAA as data rate booster for LTE-A Unlicensed Long-Term Evolution (LTE-U) and Licensed Assisted Access (LAA) are new concepts to increase the available RF bandwidth of mobile users to achieve much higher data rates than are possible with common LTE bands. For the Frequency-Division Duplexing (FDD) mode with the traditional LTE bands up to 2.7 GHz, intra- and inter-band carrier aggregation is used with up to 5 channels and a maximum 100 MHz bandwidth. However, this technology requires quite complex RF FE architecture, and suffers from performance degradation. On the other hand, LTE-U and LAA can make use of the 5- to 6-GHz ISM (Industrial, Science and Medicine) bands and can easily use much a higher bandwidth (up to 160 MHz) with a simple RF FE. This additional available bandwidth can be combined with the common LTE bands at lower frequencies. The first figure below shows how these solutions work together with the LTE FDD operation by using carrier aggregation or link aggregation. The second picture shows one of the first proposals by mobile phone makers in 3GPP for a 5-GHz LAA downlink to support common FDD up-/downlinks. Carrier Wi-Fi Deployment Wi-Fi 2.4 & 5 GHz Link Aggregation Licensed LTE 400 MHz to 3.8 GHz in Mobile Phone LTE-U Small Cell Deployments LTE-U 5 GHz Carrier Aggregation Licensed LTE 400 MHz to 3.8 GHz in Mobile Phone LTE FDD operation supported by LAA and LTE-U techniques using link or carrier aggregation 55 Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) Constituted FDD Band 5GHz Band Block diagram of a 5-GHz LAA to support common FDD operation using carrier aggregation Nevertheless, this technology must co-exist with the WLAN IEEE802.a/ac standard. Various implementations in the system are under investigation by 3rd Generation Partnership Project (3GPP) members to monitor and control the usage of the channels in 5 to 6 GHz to avoid link collision between WLAN and LTE-U or LAA. One method to avoid link collision is for a system to listen to a channel for at least 3 ms to make sure that it is free for use before the radio link is established and packages can be sent out. 56 Application Guide for Mobile Communication Wireless-LAN, Unlicensed LTE (LTE-U) and Licensed Assisted Access (LAA) 5.2.2 LTE-U and LAA Front-End Devices RF MMIC LNAs Application Note Product Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGB741L7ESD AN207 12 2.0 -1 8.5 3.0 6 TSLP-7-1 BGB707L7ESD TR10121) 13.3 2.3 -6 -4.3 2.8 3.2 TSLP-7-1 Notes: 1) On request; 2) Please visit www.infineon.com/rf-mmic for alternative devices. RF CMOS Switches Product Type App. Note Supply [V] Vctrl1) [V] IL2) [dB] Isolation [dB] P-0.1dB3) [dBm] Pin,max4) [dBm] Ctrl.5) Int. Package BGS12SN6 SPDT AN332 1.8…3.3 1.4…3.3 0.3/0.56) 32/306) >30 30 GPIO TSNP-6-2 Notes: 1) Digital Control Voltage; 3) 0.1 dB compression point; 6) Value at 2.4 GHz/5 GHz; 2) IL = Insertion Loss; 4) Maximum input power; 5) Control Interface; 7) Please visit www.infineon.com/rfswitches for alternative devices. RF Schottky Diodes for Power Detectors Product1) Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [µA] @VR [V] BAT62-02V AN185 0.35 0 580 2 - - < 10 40 SC79 BAT15-02EL BAT15-02ELS on request 4 TSLP-2-19 TSSLP-2-3 Notes: 0.26 0 230 1 320 10 <5 Package 1) D = Dual; T = Triple; Q = Quadruple; 2) at 1 MHz; 3) Please visit www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFR840L3RHESD AN281 AN290 15.1 1.0 -8 +2 3.0 9.4 TSLP-3-9 BFR740L3RH AN170 14.3 1.3 -5 +4 3.0 12.9 TSLP-3-9 Note: Please visit www.infineon.com/lna up to 12 GHz for alternative devices. TVS Diodes for Antenna ESD Protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 med. PRF AN392 ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD101-B102EL/02ELS med. PRF AN327 ±5.5 ±12 ±18@±8 ±30@±16 1.5 - - 0.10 1 ESD103-B102EL/02ELS high PRF AN327 ±15 ±10 ±36@±8 ±48@±16 1.8 - - 0.10 1 Notes: ±14@±16 ±20@±30 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 57 TSLP-2-20 TSSLP-2-4 TSLP-2-20 TSSLP-2-4 Application Guide for Mobile Communication FM Radio and Mobile TV 6 FM Radio and Mobile TV Frequency Modulation (FM) radio has a long history, starting from its development in 1933. Today, FM radio is an integral part of almost all mobile phones. The headset cable can serve as an antenna for FM reception. Its size (~75 cm) is ideal to have good reception. Nevertheless, no FM reception is possible when the headset is not available. There is a clear market trend to be able to use FM radio without the headset cable, meaning that the antenna has to be integrated inside the phone. However, there are space constraints on the antenna design. Shrinking the size of the antenna introduces a high loss in the system which reduces the receiver's sensitivity. The major FM topologies widely used in the market are: - FM Receiver (RX) only (Application 1): Only the FM radio receive function is implemented - FM Transmitter (TX) and RX (Application 2): The FM path is used for both FM radio reception and FM signal transmission, streaming music from the mobile phone to other FM receivers such as car radio and home hi-fi systems Infineon’s low noise amplifiers (LNAs) for mobile FM applications include Monolithic Microwave Integrated Circuits (MMICs) BGB707L7ESD, BGB717L7ESD, and BGB719N7ESD, as well as low-cost transistors such as BFR340F. They solve the problem of the short FM antenna in mobile phones through better impedance match between the FM antenna and the FM receiver. Therefore, they can keep the system signal-to-noise ratio as good as with a headset. BGB707L7ESD offers the flexibility to match various antenna and receiver input impedances. The highly integrated BGB719N7ESD is the compact solution that offers the best performance for high-ohmic antenna and 50-Ohm receiver input impedance. The integrated active biasing enables consistent stable operation with varying temperature and process variations. It is used in all kinds of mobile devices such as mobile phones, personal digital assistant (PDAs), portable FM radio, MP3 players etc. Putting Infineon’s Electro-Static Discharge (ESD) protection diode from the ESD108-B1-CSP0201 and ESD103-B1-02EL/02ELS series in front of the LNA increases the system’s ESD robustness up to 8 kV contact discharge (IEC61000-4-2) at the RF input. The diode has a parasitic capacitance of only 0.2 pF. Infineon’s Single-Pole Double-Throw SPDT switch BGS12 series can be used to switch between the headset and the embedded antenna in Application 1 or between transmit and receive FM functions in Application 2. Please visit www.infineon.com/fmradio for more details on the latest product and application information for FM radio. 58 Application Guide for Mobile Communication FM Radio and Mobile TV 6.1 FM Radio with Embedded Antenna Application 1: for only FM Reception Headset as FM Antenna Embedded FM Antenna 76 – 108 MHz ESD Diode RX FM Receiver IC SPDT Switch LNA ESD Diode Application 1: FM reception only Headset as FM Antenna SPDT Switch Embedded FM Antenna 76 – 108 MHz ESD Diode RX FM Transceiver IC SPDT Switch LNA TX ESD Diode Application 2: FM transmit/receive function block 59 Application Guide for Mobile Communication FM Radio and Mobile TV RF MMIC LNAs Application Note Product on BGA729N63) request Gain4) [dB] NF 4) [dB] IP-1dB4) [dBm] IIP34) [dBm] Supply [V] Current4) [mA] Package 16.3/-4 1.1/4.3 -15/+5 -6/+17 1.5…3.3 6.0/0.5 TSNP-6-2 BGB719N7ESD AN2551) TR10622) 13.5 14.5 1.2 1.7 -6 -11 -14 -16 3.0 3.0 2.8 2.8 TSNP-7-6 BGB707L7ESD AN1771) AN1812) 12.0 15.0 1.0 1.3 -5 -10 -12 -6 3.0 2.8 3.0 4.2 TSLP-7-1 BGB717L7ESD AN1761) 12.0 1.0 -5 -12 3.0 3.0 TSLP-7-1 BGB741L7ESD 2) 16.1 1.2 -8.9 0.3 3.0 6.0 TSLP-7-1 Notes: TR130 1) For high-ohmic antenna; 2) For 50-Ω antenna; 3) LNA with two gain modes (high-gain/low-gain); 4) Values in high-gain (HG) / low-gain (LG) mode; 5) Please visit www.infineon.com/ltelna for alternative devices. RF Transistor LNAs Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package AN2001) AN2052) 15.5 15.6 1.4 1.9 -27 -25 -16 -16 1.8 1.8 2.9 3.0 TSFP-4 BFP460 AN2032) AN2042) 14.9 17.1 1.1 1.2 -26 -24 -17 -16 1.8 2.6 3.0 4.2 SOT343 BFP540ESD AN2022) 13.5 1.0 -26 -16 1.8 3.0 SOT343 Product BFR340F Notes: 1) For high-ohmic antenna; 2) For 50-Ω antenna; 3) Please visit www.infineon.com/rf-transistors for alternative devices. RF CMOS Switches Product Type App. Note Supply [V] Vctrl1) [V] IL2) [dB] Isolation [dB] P-0.1dB3) [dBm] Pin,max4) [dBm] Ctrl.5) Int. Package BGS12AL7-4 BGS12AL7-6 SPDT AN175 2.4…3.6 1.4…3.6 0.3 50 > 21 21 GPIO TSLP-7-4 TSLP-7-6 BGS12SN6 SPDT AN332 1.8…3.3 1.4…3.3 0.2 40 >30 30 GPIO TSNP-6-2 BGS13SN9 SP3T on request 1.8…3.3 1.35…Vdd 0.33 / 0.35 30 / 27 >30 30 GPIO TSNP-9-2 Notes: 1) Digital Control Voltage; 3) 0.1 dB compression point; 5) Control Interface; 2) IL = Insertion Loss; 4) Maximum input power; 6) Please visit www.infineon.com/rfswitches for alternative devices. TVS Diodes for Antenna ESD Protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 med. PRF AN392 ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD101-B102EL/02ELS med. PRF AN327 ±5.5 ±12 ±18@±8 ±30@±16 1.5 - - 0.10 1 TSLP-2-20 TSSLP-2-4 ESD103-B102EL/02ELS high PRF AN327 ±15 ±10 ±36@±8 ±48@±16 1.8 - - 0.10 1 TSLP-2-20 TSSLP-2-4 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 60 Application Guide for Mobile Communication FM Radio and Mobile TV 6.2 TV Reception in Mobile Phones Mobile phones today are all-in-one devices. They have not only wireless functions for voice and data but also entertainment features. Mobile TV is one of the most fascinating features. It brings live news and entertainment programs onto the phone display and enables people not to miss their favorite programs. Infineon’s mobile TV LNAs BGB741L7 are especially designed for the mobile TV reception with 50- or 75-Ohm interfaces, while our RF transistors offer cost-effective solutions to improve the signal-to-noise ratio and therefore the quality of the TV reception. Those LNAs together with Infineon’s ESD protection diode from the ESD108-B1-CSP0201 and ESD103-B1-02EL/02ELS series improve systems' ESD performance up to 8 kV contact discharge (IEC61000-4-2) at the antenna input. The parasitic capacitance is only 0.2 pF. Analog TV/DVB-T/CMMB T-DMB/ISDB-T/DVB-H 40 – 860 MHz Silicon-Tuner GSM Rejection Filter ESD Diode LNA Diplexer RF MMIC LNAs Product Application Note Gain2) [dB] NF 2) [dB] IP-1dB2) [dBm] IIP32) [dBm] Supply [V] Current2) [mA] Package BGA729N61) on request 16.3/-4 1.1/4.3 -15/+5 -6/+17 1.5…3.3 6.0/0.5 TSNP-6-2 BGB707L7ESD AN232 13.0 1.5 -7 -11 3.0 2.9 TSLP-7-1 BGB741L7ESD AN206 15.0 1.5 -8 -3 2.8 5.4 TSLP-7-1 Notes: 1) LNA with two gain modes (high-gain/low-gain); 2) Values in high-gain (HG) / low-gain (LG) mode; 3) Please visit www.infineon.com/rf-mmic for alternative devices. RF Transistor LNAs Note: Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP640ESD BFP540ESD BFR380L3 AN218 AN142 AN221 16.5 14.2 10.5 0.83 1.5 2.2 -11.6 -21 -2 +9.3 -13 +7 3.0 5.0 3.3 7.3 3.3 16.8 SOT343 SOT343 TSLP-3-1 Please visit www.infineon.com/rf-transistors for alternative devices. 61 Application Guide for Mobile Communication FM Radio and Mobile TV TVS Diodes for Antenna ESD Protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 med. PRF AN392 ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD101-B102EL/02ELS med. PRF AN327 ±5.5 ±12 ±18@±8 ±30@±16 1.5 - - 0.10 1 TSLP-2-20 TSSLP-2-4 ESD103-B102EL/02ELS high PRF AN327 ±15 ±10 ±36@±8 ±48@±16 1.8 - - 0.10 1 TSLP-2-20 TSSLP-2-4 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 62 Application Guide for Mobile Communication FM Radio and Mobile TV 6.3 TV Reception with Band Selection Switch Analog TV/DVB-T/CMMB T-DMB/ISDB-T/DVB-H 40 – 860 MHz LPF UHF LNA SPDT Switch ESD Diode Tuner IC LPF VHF RF MMIC LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGB707L7ESD AN232 13.0 1.5 -7 -11 3.0 2.9 TSLP-7-1 BGB741L7ESD AN206 15.0 1.5 -8 -3 2.8 5.4 TSLP-7-1 Notes: Please visit www.infineon.com/rf-mmic for alternative devices. RF Transistor LNAs Note: Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP640ESD AN218 16.5 0.83 -11.6 +9.3 3.0 7.3 SOT343 BFP540ESD AN142 14.2 1.5 -21 -13 5.0 3.3 SOT343 BFR380L3 AN221 10.5 2.2 -2 +7 3.3 16.8 TSLP-3-1 Please visit www.infineon.com/rf-transistors for alternative devices. RF CMOS Switches Product Type App. Note Supply [V] Vctrl1) [V] IL2) [dB] Isolation [dB] P-0.1dB3) [dBm] Pin,max4) [dBm] Ctrl.5) Int. Package BGS12AL7-4 BGS12AL7-6 SPDT AN175 2.4…3.6 1.4…2.8 0.35 > 32 > 21 21 GPIO TSLP-7-4 TSLP-7-6 BGS12SN6 SPDT AN332 1.8…3.3 1.35…3.3 0.25 > 40 >30 30 GPIO TSNP-6-2 Notes: 1) Digital Control Voltage; 3) 0.1 dB compression point; 5) Control Interface 2) IL = Insertion Loss; 4) Maximum input power; 6) Please visit www.infineon.com/rfswitches for alternative devices. TVS Diodes for Antenna ESD Protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 med. PRF AN392 ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 63 Application Guide for Mobile Communication FM Radio and Mobile TV 6.4 FM and TV Reception in Mobile Phones with Band Selection Switch Analog TV/DVB-T/CMMB/ T-DMB/ISDB-T/DVB-H SP3T 40 – 860 MHz LPF Switch UHF LNA Tuner IC LPF VHF ESD Diode FM Tuner IC LPF RF MMIC LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGB707L7ESD AN232 13.0 1.5 -7 -11 3.0 2.9 TSLP-7-1 BGB741L7ESD AN206 15.0 1.5 -8 -3 2.8 5.4 TSLP-7-1 Notes: Please visit www.infineon.com/rf-mmic for alternative devices. RF Transistor LNAs Note: Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP640ESD AN218 16.5 0.83 -11.6 +9.3 3.0 7.3 SOT343 BFP540ESD AN142 14.2 1.5 -21 -13 5.0 3.3 SOT343 BFR380L3 AN221 10.5 2.2 -2 +7 3.3 16.8 TSLP-3-1 Please visit www.infineon.com/rf-transistors for alternative devices. RF CMOS Switches Product Type App. Note BGS13SN9 SP3T on request Notes: 1) Digital Control Voltage; 3) 0.1 dB compression point; 5) Control Interface Supply [V] Vctrl1) [V] IL2) [dB] Isolation [dB] P-0.1dB3) [dBm] Pin,max4) [dBm] Ctrl.5) Int. Package 1.8…3.3 1.35…Vdd 0.33 / 0.35 30 / 27 >30 30 GPIO TSNP-9-2 2) IL = Insertion Loss; 4) Maximum input power; 6) Please visit www.infineon.com/rfswitches for alternative devices. TVS Diodes for Antenna ESD Protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 med. PRF AN392 ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 64 Application Guide for Mobile Communication ESD and ESD/EMI Interface Protection 7 ESD and ESD/EMI Interface Protection In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better applications. The race to pack more and more high-speed functions in a smaller space accelerates miniaturization roadmaps. However, the downscale of semiconductor chips together with the increase of doping levels results in a dramatic reduction of the thin gate oxide layer and the width of the pn-junction in semiconductor chips. This, in combination with greater circuit population, increases the susceptibility of the semiconductor chips to Electro-Static Discharge (ESD). Subsequent failures of electronic equipment can be noticed as hard failures, latent damage, or temporary malfunctions. Hard failures are easier to spot, and in general require the failed device to be replaced. In the best case, the failure will be detected before the equipment leaves the factory and customers will never receive it. Failures leading to temporary malfunctions of equipment or latent failures are quite common and very difficult to detect or trace in the field. Temporary malfunctions may go unreported but can result in negative customer impressions as the user may need to reset the equipment. A product recall for swapping or repairing parts due to ESD failures may cause the company a cost several times higher than the cost of the device itself. The only way to ensure stable operation and maximum reliability at the system level is to ensure that equipment is properly protected by an external protection device against electrostatic discharge and transients. Infineon’s Value Proposition Improve ESD immunity at the system level by providing first-class protection beyond the IEC61000-4-2 level4 standard, and offering: - Superior multi-strike absorption capability - Safe and stable clamping voltages to protect even the most sensitive electronic equipment - Protection devices that fully comply with high-speed signal quality requirements - Array solutions that save space on the board and reduce part count - Easy-to-use single devices for space-constrained applications - Discrete components that drain extremely low leakage currents and help to extend battery duration - Packages enabling easy Printed Circuit Board (PCB) layout For detailed information about our Transient Voltage Suppression (TVS) diode portfolio and their applications, please refer to our Application Guide – Part 3: Protection. You can also visit our website for protection devices: www.infineon.com/protection. 65 Application Guide for Mobile Communication ESD and ESD/EMI Interface Protection 7.1 Interface Protection with TVS Protection Diodes Infineon offers various high-performance types of discrete TVS protection devices to protect our customers’ mobile phones from ESD attacks. Below is a short overview of the available TVS protection devices from Infineon for various RF and digital interfaces of mobile phones. For detailed information about our TVS diode portfolio and applications, please refer to our Application Guide – Part 3: Protection. You can also visit our website for protection devices: www.infineon.com/protection. Interface protection with discrete ESD TVS diodes In a modern mobile phone there are a lot of open access points that could permit ESD strikes to reach the inner PCB, such as the charging port, audio ports (line out, headset jack), and data interfaces (USB). Other very risky paths for ESD strikes are the case bottom, and air gaps in the enclosure or the microphone/speaker. Often the point of entrance for the ESD strike is not obvious. To provide proper ESD protection for the inner PCB, it is mandatory to place fast-responding TVS protection diodes at specific locations. Depending on the position to be protected (e.g. where the signal frequency is low and therefore device capacitance does not matter), general-purpose TVS diodes can be used. They are listed in the table below, “TVS ESD Diodes for general-purpose interfaces." 66 Application Guide for Mobile Communication ESD and ESD/EMI Interface Protection Dedicated low-capacitance TVS diodes must be used for high-speed data lines to avoid any impact on signal integrity. As higher the data rate will be as more the device capacitance matters. For the 5 Gb/s USB3.0 data rate the ESD protection device capacitance should be below 0.5pF. Please refer to the table below, “TVS ESD Diodes for high-speed digital interface” regarding these low-capacitance TVS diodes. TVS ESD Diodes for General-Purpose Interfaces Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD200-B1-CSP0201 ESD202-B1-01005 General purpose ±5.5 ±16 +13/-13@±16 0.2 3 12.5 6.5 1 WLL-2-1 WLL-2-2 ESD231-B1-W0201 General purpose ±5.5 ±30 ±12@±16 ±16@±30 0.3 2 9 8 10 3.4 1 WLL-2-1 ESD204-B1 02EL/02ELS General purpose +14/-8 ±18 +28/-27@±16 +35/-35@±30 0.5/0.6 1 -1 17 -23 4 1 TSLP-2-19 TSSLP-2-3 ESD207-B1 02EL/02ELS General purpose ±3.3 ±30 ±7@±16 ±9@±30 0.13 1 8 4.5 6.8 14 1 TSLP-2-19 TSSLP-2-3 ESD206-B1 02EL/02ELS ESD206-B1-02V General purpose ±5.5 ±30 ±9@±16 ±12@±30 0.13 0.16 1 6 7.5 9.6 12 1 TSLP-2-19 TSSLP-2-3 SC79 ESD5V0S5US General purpose +5.0 ±30 ±10@±16 ±14@±30 0.25 10 10.5 70 5 SOT363 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. TVS ESD Diodes for High Speed Interfaces Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD108-B1-CSP0201 ESD119-B1-W01005 MIPI, HDMI, USB2.0-HS ±5.5 ±25 ±20@±16 ±31@±30 0.76 1 2.5 8.5 11 0.25 1 WLL-2-1 WLL-2-2 ESD102-U4-05L USB3.0-SS MIPI, HDMI +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 4 TSLP-5-2 ESD102-U1-02ELS USB3.0-SS MIPI, HDMI +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 1 TSSLP-2-3 ESD105-B102EL/02ELS USB3.0-SS ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD200-B1-CSP0201 ESD202-B1-01005 General purpose ±5.5 ±16 +13/-13@±16 0.2 3 12.5 6.5 1 WLL-2-1 WLL-2-2 ESD5V5U5ULC USB2.0-HS, VCC +5.5 ±25 8.9@16 11.5@30 0.2 6 10 0.45 4 SC74 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 67 Application Guide for Mobile Communication ESD and ESD/EMI Interface Protection 7.2 Interface Protection with Integrated ESD/EMI Devices Due to the increasing number of wireless functions integrated into mobile phones, it's essential to provide both immunity against ESD and robustness against Electromagnetic Interference (EMI). For applications where a high number of input/outputs (I/Os) must be protected from ESD and EMI, a smart integration of the required protection features will reduce necessary space on the PCB and make the layout easier. Secure Digital Card (SD) and Micro Secure Digital Memory (µSD) card provide six high-speed lines and one Vcc line. In a lot of applications, these lines are exposed to ESD events during mobile phone use, and especially during insertion or removal of the SD / µSD card. State-of-the art SD / µSD cards work in UHS-I Mode, with a 208-MHz clock rate. To avoid any impact on signal integrity (SI) or rise/fall time, the device capacitance must be minimized. The required EMI protection is provided by the EMI resistor in conjunction with the load capacitance present in the SD / µSD link. Infineon's BGF148 is based on a “PI” structure with a 20-Ohm EMI resistor. Line capacitance is about 1 pF. In combination with the load capacitance of 10 pF (meeting the µSD-card specification), the EMI filter response is guaranteed. BGF148 DAT2 µSD Card Connector µSD Card Vcc DAT3 DAT2 DAT3 CMD CMD Vcc Vcc CLK CLK 15kV CLK 2kV CMD DAT0 DAT1 LPF GND GND DAT2 DAT0 DAT0 DAT3 DAT1 DAT1 Flash Controller IC Integrated ESD/EMI devices dedicated for HS and UHS I SIM Card Integrated ESD/EMI Protection Device Notes: Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] RESD3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package BGF148 (µ)SD Card Interface ±5.5 ±15 8.5@1 9@16 20 - - 1.2 7 TSNP-14-2 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage @ output, for input 100 ns pulse length; 3) ESD resistor between input and output TVS diode; 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical line capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 68 Application Guide for Mobile Communication ESD and ESD/EMI Interface Protection 7.3 Near-Field Communication Near-Field Communication (NFC) is a short-range high-frequency wireless communication technology that enables the exchange of data between devices over about a 10-20 cm distance. The technology is a simple extension of the ISO/IEC 14443 proximity-card standard (proximity card, radio-frequency identification (RFID) that combines the interface of a smartcard and a reader into a single device. An NFC device can communicate with both existing ISO/IEC 14443 smartcards and readers, as well as with other NFC devices, and is thereby compatible with existing contactless infrastructure already in use for public transportation and payment. It operates within the globally available and unlicensed 13.56 MHz radio frequency ISM band (Industrial, Scientific and Medical). Plenty of applications are present in the market already, and more will enter the market soon. Mobile Commerce: - Mobile ticketing - for airplanes, for public transport, for concerts/events - Mobile payment - the device acts as a debit/ credit payment card - Electronic money - such as a stored value card Proof of Identity: - Access control for buildings, or IT equipment - Electronic keys - car keys, house/office keys and hotel room keys, etc. NFC can be used to configure and initiate other wireless network connections such as Bluetooth and Wi-Fi. The time-consuming configuration procedure for identification to a Bluetooth or Wi-Fi system is reduced by a “one touch” step for two mobiles equipped with NFC devices. To provide the required security level for all these applications, the NFC modem is combined with a secure controller (NFC module). In a mobile phone, the NFC module is also linked to the Subscriber Identity Module (SIM) card. In a mobile phone the NFC Front-End (FE) is often separated into the Transmitter (TX) driver with the Electromagnetic compatibility (EMC) filter and Receiver (RX) signal decoupling, and the high impedance 13.56-MHz resonator. The 13.56 MHz resonator includes the loop antenna (resonator’s inductance) and a parallel capacitor (resonator’s capacitance). Because of the loop antenna size, the 13.56 MHZ resonance circuit is often installed in the bottom shell of the mobile phone, which can be removed by the user. An interface is generated inside the NFC FE which then becomes ESD-critical. Proper ESD protection is mandatory to protect the EMI filter and the NFC FE driver, which is located on the main mobile phone PCB. 69 Application Guide for Mobile Communication ESD and ESD/EMI Interface Protection Buffer Amp NFC Transceiver IC 13.56 MHz EMI-LP filter antenna matching ESD Diode LNA loop antenna Main PCB / Top shell NFC with single-line LNA and RF driver ESD Diode Base band Tx+ Tx+ GND antenna matching loop antenna Rx Security Controller EMI-LP filter NFC Transceiver IC RF = 13.56 MHz Vsignal vs. |GND| < 18 Vp SIM SWP Main PCB / Top shell ESD protection for a single-ended NFC antenna system EMI-LP filter Tx- GND antenna matching loop antenna Base band Tx+ Rx Security Controller ESD Diode NFC Transceiver IC RF = 13.56 MHz Vsignal vs. |GND| < 18 Vp +Vsignal vs. –Vsignal < 36V SIM SWP Main PCB / Top shell ESD protection for a differential NFC antenna system RF MMIC Buffer Amplifier Product BGA616 Notes: 1) On request; Application Note Gain [dB] NF [dB] OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] Package TR10651) 17.5 2.9 16.5 28 3.3 62 SOT343 2) Please visit http://www.infineon.com/rftransistors for alternative devices. RF MMIC LNA Product BGA420 Notes: 1) On request; Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package TR10651) 17.7 1.9 -19.5 -3 3.3 8.1 SOT343 Package 2) Please visit http://www.infineon.com/rfmmics for alternative devices. TVS Diodes for Antenna ESD Protection Product App. Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines ESD128-B1-W0201 ESD129-B1-W01005 ESD110-B1-02EL/02ELS NFC-RF AN244 1 17 0,3 1 ±15 ±32@16 ±28@16 ±34@25 0,85 ±18 0.65 1 17- 0.3 1 ESD108-B1-CSP0201 ESD119-B1-W01005 SWP AN392 ±5.5 0.76 1 2.5 8.5 11 0.25 1 Notes: ±25 ±20@±16 ±31@±30 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 70 WLL-2-1 WLL-2-2 TSLP-2-20 TSSLP-2-4 WLL-2-1 WLL-2-2 Application Guide for Mobile Communication ESD and ESD/EMI Interface Protection 7.4 Surge protection for the battery charger port To protect the mobile device regarding overvoltage at the battery charger port an overvoltage protection (OVP) functionality is designed in. This overvoltage functionality can be located inside the PMU (Power Management Unit) or in a dedicated IC in front the battery charger (BC) and the PMUs. The job of the OVP is to control the path between the external charger interface and BC / PMUs. In case of an undesired high voltage the link is switched off. The maximum protection voltage of the OVP is restricted to 20…40V based on the IC technology. Higher voltage will destroy the OVP. A certain countermeasure is required to handle higher voltage peaks like ESD or surge events, injected direct into the charger interface pins. Another threat are glitches coming from the power main passing the wall plug charger unit, or start up glitches generated in the wall plug charger itself. These energy rich single events have to be shunted to GND in the mobile device by a surge robust TVS diode in front of the OVP without exceeding the maximum voltage of the OVP. Battery Charger PMU Battery Charger PMU outputs OVP surge TVS PMU1 control PMU2 Battery 5V surge TVS optional USB Vbus Battery Charger (BC) interface Mobile Device charging interface (Quick Charge, USB-PD) Surge TVS Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD307-U1-02N ESD/Surge AN372 10 ±30 17@±16 18@±30 0.05 1 34 16 24 270 1 TSNP-2-2 ESD311-U1-02N ESD/Surge AN372 15 ±30 22@±16 23@±30 0.07 1 28 21 29 210 1 TSNP-2-2 ESD231-B1-W0201 General purpose ±5.5 ±30 ±12@±16 ±16@±30 0.3 2 9 8 10 3.4 1 WLL-2-1 ESD5V0S1U-03W ESD/Surge protection 5.0 ±30 7.9@±16 8.8@±30 0.065 5 40 7.5 11 430 1 SOD323 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 µs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 µs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 71 Application Guide for Mobile Communication Abbreviations Abbreviations Abbr. Terms Abbr. Terms ATSLP Advanced Thin Small Leadless Package NF Noise Figure ASM Antenna Switch Module BAW Bulk Acoustic Wave NFC Near-Field Communication CA Carrier Aggregation OFDM Orthogonal Frequency Division Multiplexing CDMA Code Division Multiple Access PCS Personal Communications Services COMS Complementary Metal-Oxide-Semiconductor PCB Printed Circuit Board CSP Chip Scale Package PDA Personal Digital Assistant DC Direct Current PIFA Planar Inverted F antenna DCS Digital Cellular Service PIN-Diode Positive-Intrinsic-Negative diode DL Downlink PND Personal Navigation Devices DPDT Double Pole Double Throw QAM Quadrature Amplitude Modulation DP Display Port RF Radio Frequency DSSS Direct Sequence Spread Spectrum RFFE RF Front-End Control Interface DVI Digital Visual Interface RFID radio-frequency identification ECU Electronic Control Unit EDGE Enhanced Data Rates for GSM Evolution RFS RF and Sensors EM Electro-Magnetic RoHS Restriction of Hazardous Substances EMI Electromagnetic Interference RPP Reverse Polarity Protection ESD Electro-Static Discharge RX Receiver E-UTRA Evolved Universal Terrestrial Radio Access SAR Search and Rescue FDD Frequency-Division Duplexing SAW Surface Acoustic Wave FEM Front-End Module SD Secure Digital Card FHSS Frequency-Hopping Spread Spectrum SI Signal Integrity FM Frequency Modulation SIM Subscriber Identity Module GLONASS Global Orbiting Navigation Satellite System SPI Serial Peripheral Interface GNSS Global Navigation Satellite System SPxT Single Pole x Throw (Switch) GPIO General Purpose Input/Output SV-LTE Simultaneous Voice and LTE GPS Global Positioning System GSM Global System for Mobile Communication TDD HBM Human Body Model HDMI High-Definition Multimedia Interface TD-LTE Time-division duplexing Time Division-Synchronous Code Division Multiple Access Time Division Long-Term Evolution HSPA High-Speed Packet Access T(S)SLP Thin (Super) Small Leadless Package HSPA+ Evolved High-Speed Packet Access TRP Total Radiated Power IC integrated circuit IL Insertion Loss TSNP Thin Small Non Leaded Package IMD Intermodulation Distortion TTFF Time to First fix IPD Integrated Passive Device TT Truth Table IMT International Mobile Telecommunications TVS Transient Voltage Suppression ISM Industrial, Scientific and Medical TX Transmitter LNA Low Noise Amplifier UE User Equipment LMM LNA multiplexer modules UHS-I Ultra High Speed SD card in Version 3.01 LTE Long-Term Evolution UMTS Universal Mobile Telecommunications System LTE-A LTE-Advanced UL Uplink MHL Mobile High-Definition Link USB Universal Serial Bus MIPI Mobile Industry Processor Interface VoIP Voice over IP MMIC Monolithic Microwave Integrated Circuit W-CDMA Wideband-Code Division Multiple Access MIMO Multiple Input Multiple Output WLAN Wireless Local Area Network MU Multi-User µSD Micro Secure Digital Memory 3GPP 3rd Generation Partnership Project TD-SCDMA 72 Application Guide for Mobile Communication Alphanumerical List of Symbols Alphanumerical List of Symbols Symbol Term Unit CT Total Diode capacitance [pF] ESD Voltage of ESD pulse [kV] IF Forward current [mA] IR Reserve current [µA] IPP Maximum peak pulse current [A] rd IIP3 Input 3 intercept point [dBm] IL Insertion loss [dB] nd IMD2 2 order intermodulation distortion [dBm] IP-1dB Input 1dB compression point [dBm] LDO Low drop out [V] NF Noise figure [dB] rd OIP3 Output 3 intercept point [dBm] OP-1dB Output 1dB compression point [dBm] P-0.1dB 0.1dB compression point [dBm] Pin,max Maximum input power [dBm] Rdyn Dynamic resistance [Ω] rF Differential forward resistance [Ω] VCL Clamping voltage [V] Vctrl Digital control voltage [V] Vdd DC supply voltage [V] VF Forward voltage [mV] VR Reverse voltage [V] VRWM Reverse working voltage [V] τL Storage time [ns] 73 Application Guide for Mobile Communication Package Information Package Information Package (JEITA-code) X L×W×H PIN-Count Scale 1:1 All Dimensions in mm All products are available in green (RoHS compliant) ATSLP-12-4 ( - ) ATSLP-12-1 ( - ) 13 13 1.9 × 1.1 × 0.65 15 2 1.9 × 1.5 × 0.65 3:1 3:1 SC79 ( - ) ATSLP-14( - ) 1.9 × 1.1 × 0.65 SOT23 ( - ) 1.6 × 0.8 × 0.55 3 2.9 × 2.4 × 1.1 5:1 4:1 2:1 WLL-2-1 SOT323 (SC-70) 3 SOT343 (SC-82) 2.0 × 2.1 × 0.9 4 3:1 1.0 × 0.6 × 0.39 2 2 1.0 × 0.6 × 0.31 4 5:1 2 4 TSLP-3-1 ( - ) 1.0 × 0.6 × 0.31 3 1.0 × 0.6 × 0.4 5:1 TSLP-6-2 ( - ) TSLP-5-2 ( - ) 1.2 × 0.8 × 0.39 4:1 5:1 5:1 TSLP-4-7 ( - ) 1.2 × 0.8 × 0.4 1.0 × 0.6 × 0.4 5:1 5:1 TSLP-4-4 ( - ) 2 1.4 × 1.2 × 0.55 TSLP-2-20 ( - ) 1.0 × 0.6 × 0.31 5:1 TSLP-3-9 ( - ) 4 TSLP-2-19 ( - ) 1.0 × 0.6 × 0.39 TSLP-2-1 ( - ) TSFP-4 ( - ) 0.778×0.528×0.34 6:1 TSLP-2-17 ( - ) 5:1 3 6 3:1 TSLP-2-7 ( - ) 2 FWLP-6-1 ( - ) 2.0 × 2.1 × 0.9 5 6 1.3 × 0.8 × 0.39 4:1 1.1 × 0.7 × 0.39 4:1 4:1 WLL-2-1 TSLP-6-4 ( - ) TSLP-6-3 ( - ) 6 6 1.1 × 0.9 × 0.39 1.1 × 0.7 × 0.31 7 1.15 × 1.15 × 0.31 5:1 10 7 6 4:1 4:1 74 3:1 TSNP-7-6 ( - ) TSNP-7-1 ( - ) 1.1 × 0.7 × 0.375 1.4 × 1.26 × 0.39 3:1 TSNP-6-2 ( - ) 1.55 × 1.15 × 0.31 7 2.3 × 1.5 × 0.4 3:1 TSLP-10-1 ( - ) TSLP-9-3 ( - ) TSLP-7-6 ( - ) TSLP-7-4 ( - ) 2.0 × 1.3 × 0.4 4:1 4:1 9 TSLP-7-1 ( - ) 7 2.0 × 1.3 × 0.375 3:1 7 1.4 × 1.26 × 0.375 3:1 Application Guide for Mobile Communication Package Information TSNP-7-10 ( - ) 7 TSNP-9-1 ( - ) TSNP-8-1 ( - ) 2.3 × 1.7 × 0.73 8 1.1 × 1.1 × 0.375 3:1 16 2 WLL-2-2 ( - ) 0.58 × 0.28 × 0.15 2 0.43 × 0.23 × 0.15 10:1 WLL-2-1 7:1 12:1 WLL-2-1 75 1.95 × 1.8 × 0.375 2:1 TSNP-26-2 ( - ) 27 2.3 × 2.3 × 0.73 3.4 × 2.6 × 0.73 2:1 TSSLP-2-4 ( - ) TSSLP-2-3 ( - ) 0.62 × 0.32 × 0.31 7:1 WLL-2-1 ( - ) 2 2 15 2:1 TSSLP-2-2 ( - ) 0.62 × 0.32 × 0.31 2:1 21 2:1 TSSLP-2-1 ( - ) 3.2 × 2.8 × 0.77 1.5 ×1.1 × 0.375 TSNP-20-1( - ) 2.3 × 2.3 × 0.73 2:1 TSNP-26-3 ( - ) 17 17 TSNP-14-2 ( - ) 3:1 TSNP-16-6 ( - ) 2.3 × 2.3 × 0.38 2:1 10 3:1 TSNP-16-1 ( - ) 1.95 × 1.8 × 0.375 1.1 × 1.1 × 0.375 3:1 TSNP-14-3 ( - ) 15 8 TSNP-10-1 ( - ) 2 0.62 × 0.32 × 0.31 5:1 2 0.62 × 0.32 × 0.31 5:1 Application Guide for Mobile Communication Support Material Support Material Data Sheets / Application Notes / Technical Reports http://www.infineon.com/rfandprotectiondevices Products - RF CMOS Switches & Antenna Tuning Solutions LTE MMIC LNAs RF MMICs RF Transistors RF Diodes PIN Diodes Schottky Diodes Varactor Diodes www.infineon.com/rfswitches www.infineon.com/ltelna www.infineon.com/rfmmics www.infineon.com/rftransistors www.infineon.com/rfdiodes www.infineon.com/pindiodes www.infineon.com/schottkydiodes www.infineon.com/varactordiodes www.infineon.com/ESDdiodes - ESD/EMI Protection Devices Brochures: - Product Selection Guide Application Guide for Mobile Communication Application Guide for Industrial Applications Application Guide for Protection - GPS Front-End Components for Mobile and Wireless Applications www.infineon.com/RFS_Selectionguide www.infineon.com/appguide_rf_mobile www.infineon.com/appguide_rf_industrial www.infineon.com/appguide_esd_protection www.infineon.com/gps Sample Kits www.infineon.com/rpdkits Evaluation Boards, Simulation Models and Libraries Footprint Drawings Application Examples Please check the product web pages for details or for more information please contact your sales counterpart at Infineon. 76 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, IsoPACK™, iWafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. ANSI™ of American National Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CATiq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve Incorporated. MCS™ of Intel Corp. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™ of Red Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2014-07-17 www.infineon.com Edition <2015-07-01> Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? 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