Edition 2011-11-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. RF and Protection Devices Application Guide for Consumer Communication Infineon Technologies A Leading Company in RF and Protection Devices Infineon Technologies focuses on the three central challenges facing modern society: Energy Efficiency, Mobility and Security and offers semiconductors and system solutions for industrial/consumer electronics, automotive electronics, chip card and security applications. Infineon’s products stand out for their reliability, their quality excellence and their innovative and leading-edge technology in analog and mixed signal, RF and power, as well as embedded control. With its technologies and design expertise, Infineon is the market leader in its focus segments. Infineon has more than 30 years of experience in developing RF products for numerous applications and always leads in the market with high performance, yet cost effective products. You can visit our website www.infineon.com to learn more about the broad product portfolio of Infineon Technologies. The Infineon business unit - RF and Protection Devices (RPD) - has evolved over the years from a supplier of standard RF discrete components like transistors and diodes to a more advanced portfolio of state-of-the-art, innovative and differentiated products including application specific MMICs, Silicon Microphones and ESD protection components. Please visit our website www.infineon.com/rfandprotectiondevices to learn more about Infineon’s latest RF and Protection products for your applications. Infineon’s application guide consisting of four different brochures is an easy-to-use tool primarily meant for engineers to guide them to the right device for their system, efficiently. This application guide is updated frequently to include latest applications and trends. Each brochure focuses on a market segment that we support: 1. Application Guide for Mobile Communication: www.infineon.com/rpd_appguide_mobile 2. Application Guide for Consumer Applications: www.infineon.com/rpd_appguide_consumer 3. Application Guide for Industrial Applications: www.infineon.com/rpd_appguide_industrial 4. Application Guide for Protection: www.infineon.com/rpd_appguide_protection Our application experts worldwide are always ready to support you in designing your systems with our devices. Please contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get all the support you might need. Kind Regards Dr. Heinrich Heiss Dr. Chih-I Lin Director Technical Marketing & Application Engineering RPD Regard Group Leader RF Technical Marketing & Application Engineering RPD 3 RF and Protection Devices Application Guide for Consumer Communication INDEX Infi neo n T e chn olo gi e s ................................................................................................................................... 3 1 Infineon’s RF and Protection Devices for Consumer Applications .............................................. 6 2 Wi-Fi Wireless LAN (WLAN, IEEE802.11a/b/g/n/ac) and WiMAX (IEEE802.16e) .......................... 8 2.1 2.4 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11b/g/n) and WiMAX (IEEE802.16e) Front-End ...... 9 2.2 5 – 6 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11a/n/ac) and WiMAX (IEEE802.16e) Front-End 11 2.3 3.5 GHz WiMAX (IEEE802.16e) Front-End ....................................................................................... 13 2.4 Dual-Band (2.4 – 6.0 GHz) Wi-Fi Wireless LAN (WLAN, IEEE802.11a/b/g/n) Front-End ................. 15 3 Satellite Receivers - Low Noise Block (LNB) ................................................................................ 17 3.1 C-Band Twin LNB............................................................................................................................... 18 3.2 Ku-Band Twin LNB ............................................................................................................................. 19 4 TV Tuner Applications ..................................................................................................................... 21 4.1 Module Tuner for Analog / Cable / Terrestrial TV .............................................................................. 21 4.2 T-DMB/DAB in VHF Band III and L-Band .......................................................................................... 22 4.3 Si-Tuner System for Terrestrial and Cable Digital TV ........................................................................ 24 4.4 Tuner and GPS Combi-Application .................................................................................................... 25 4.5 Cable TV Reverse Path Amplifier ...................................................................................................... 27 5 Global Navigation Satellite System ................................................................................................ 28 5.1 Global Navigation Satellite System (GNSS) with Discrete RF Devices ............................................. 30 5.2 Global Navigation Satellite System (GNSS) with integrated Front-End Modules .............................. 32 6 Cordless Phones .............................................................................................................................. 34 6.1 1.9 GHz Cordless Phones .................................................................................................................. 34 6.2 2.4 GHz Cordless Phones .................................................................................................................. 36 6.3 5.8 GHz Cordless Phones .................................................................................................................. 38 7 Active Antenna for Portable Applications (Tuner, Cellular, GPS, SDARs…) ............................. 40 8 Cellular Modems for Data Communication ................................................................................... 41 9 Bluetooth (BT) Front-End for Bluetooth Class 1 ........................................................................... 42 10 Base Stations.................................................................................................................................... 44 11 RF Function Blocks with Discrete Devices ................................................................................... 46 11.1 Driver Amplifiers ................................................................................................................................. 46 11.2 Broadband Amplifier ........................................................................................................................... 47 11.3 Wide Bandwidth Single Pole Double Throw Switch ........................................................................... 48 11.4 Discrete Voltage-Controlled Oscillators ............................................................................................. 49 11.5 Voltage Tuned Filter ........................................................................................................................... 50 4 RF and Protection Devices Application Guide for Consumer Communication 11.6 Single Schottky Diode Detector ......................................................................................................... 51 11.7 High Isolation Schottky Diode Pair for Power Detection .................................................................... 52 11.8 Wide Bandwidth PIN Diode Variable Attenuator ................................................................................ 53 11.9 Passive Mixer with Schottky diodes ................................................................................................... 54 11.10 Active Mixer with Bipolar Transistors ................................................................................................. 55 12 Interface Protection ......................................................................................................................... 56 12.1 Interface Protection with Discrete ESD TVS Diodes .......................................................................... 57 12.2 Reverse Polarity Protection (RPP) Circuit ......................................................................................... 58 12.3 Reverse Polarity Protection for USB Charger .................................................................................... 59 12.4 Rectifier Circuit with Schottky Diodes ................................................................................................ 60 12.5 Clipping and Clamping ....................................................................................................................... 61 Abbreviations ....................................................................................................................................................... 62 Alphanumerical List of Symbols ........................................................................................................................ 63 Package Information ........................................................................................................................................... 64 Support Material .................................................................................................................................................. 65 5 RF and Protection Devices Application Guide for Consumer Applications 1 Infineon’s RF and Protection Devices for Consumer Applications A generic block diagram of a RF front-end is shown below. The exact circuit however varies from application to application. Let us try to understand this front-end system. The whole system can be divided into transmit section and receive section which are connected with an antenna. At the antenna, an ESD protection diode is essential as the antenna is exposed to external world and the most susceptible to ESD strikes. Placing the protection diode close to the antenna protects the entire circuit. The antenna is connected to a switch to toggle between transmit and receive functionalities. 1st LNA BPF 2nd LNA Mixer IF RF BPF Buffer Amplifier SPDT Switch ESD Diode Oscillator Power Detector Buffer Amplifier IF PA Buffer Harmonic Mixer Filter Amplifier The filter behind the antenna in the Rx chain allows only the frequency of interest to pass through to the rest of the circuit. The low noise amplifier helps reducing the overall noise figure of the system thereby boosting receive sensitivity. A 2 nd LNA is also required in some applications requiring higher gain. Mixer helps to down convert the received frequency to the IF band, which is then used to process the received signal in the RF transceiver. On the Tx side, the signal from the transceiver is fed to the mixer to up-convert, then to a band-pass filter to suppress the unwanted non-linear products. The buffer amplifier amplifies the signal to a certain level, after which the power amplifier boosts it to suitable power level for transmission. The power amplifier operating in the non-linear mode generates a lot of spurious signals which are filtered out using a high-Q band-pass filter to fulfill requirements on EMI. All these circuit elements have different figures of merit based on which the right device can be chosen. However with any existing technology and design methodology there are numerous possibilities to trade different parameters of the component. With its eminent application know how, Infineon offers various solutions for the same application suiting requirements of different system designers / customers. 6 RF and Protection Devices Application Guide for Consumer Applications In the sections to follow, various consumer applications are described using block diagrams, text and recommended devices by Infineon. All applications are depicted with simple block diagrams to show the various building blocks, followed by a short description. Infineon recommended parts for each application are tabulated together with the most important performance characteristics. More detailed information on each product including datasheet, application notes, new Spice model and S-parameter files, products and application brochures, sample kits etc. can be found on Infineon’s website www.infineon.com/rfandprotectiondevices by clicking on the specific product name. 7 RF and Protection Devices Application Guide for Consumer Applications 2 Wi-Fi Wireless LAN (WLAN, IEEE802.11a/b/g/n/ac) and WiMAX (IEEE802.16e) The Wi-Fi function is one of the most important connectivity functions in notebooks, smart phones and tablet PCs. Wi-Fi according to IEEE802.11b/g/n at 2.4 GHz is widely implemented over years. Due to the too cloudy WLAN network at 2.4 GHz, the Wi-Fi applications at 5 to 6 GHz according to IEEE802.11a are gaining focus. Not only using Wi-Fi for the high data rate access to the internet, but also different applications like home entertainment with wireless high-quality multimedia signal transmission such as Wireless HDMI in TV-sets, DVD-player,... and Wireless@Home such as home networking notebooks, mass data storages and printers, implement 5 to 6 GHz Wi-Fi features into their system to offer high-speed wireless connection. WiMAX (IEEE802.16e) at 2.3 to 2.7 GHz, 3.3 to 3.7 GHz and 5.8 GHz plays an important role in certain areas for fast setup of high data rate last mile wireless communication infrastructures where no 3G networks are available in emerging markets or countryside. WiMAX is designed for high data rate wireless communication up to 70 Mbps which is suitable for fixed point-to-point (P2P) communication and also for portable or mobile connections. For these kinds of high-speed, high data rate wireless communication standards, it is essential to ensure the quality of the link path. Major performance criteria of these equipment’s have to be fulfilled: sensitivity, strong signal capability and interference immunity with proper link budget. Infineon offers a wide product portfolio for both applications: Wi-Fi and WiMAX. It includes transistor & MMIC low noise amplifiers, power detection diodes and pin diode switches. In addition, Infineon also offers ESD protection diodes. The ESD protection diodes ESD0P2RF and ESP0P1RF series have a capacitance value of only 0.2 pF or 0.1 pF and can protect up to 8 kV contact discharge according to IEC 61000-4-2 standard. 8 RF and Protection Devices Application Guide for Consumer Applications 2.1 2.4 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11b/g/n) and WiMAX (IEEE802.16e) Front-End WLAN: 2.4 – 2.5 GHz WiMAX: 2.3 – 2.7 GHz LNA BPF SPDT Switch WLAN/ WiMAX Transceiver IC Power Detector ESD Diode BPF PA RF MMIC LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGA628L7 TR152 17.7 1.4 -18 -10 2.8 5.2 TSLP-7-8 BGA622 AN069 12.6 1.3 -15 -4 2.8 5.4 SOT343 BGA777L71) TR1006 16.5/-72) 1.2/72) -6/02) -2/+62) 2.8 4.1/0.62) TSLP-7-1 Notes: 1) LNA with two gain modes (high-gain/low-gain); 2) Values in high-gain (HG) / low-gain (LG) mode; 3) Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP740ESD AN217 17.6 0.78 -7 -4 3.3 13.1 SOT343 BFP740FESD AN171 17.4 0.8 -13 -3 3.6 14.7 TSFP-4 BFP640ESD AN218 16.5 0.83 -12 +9 3.0 7.3 SOT343 BFP640FESD AN129 15.5 0.9 -11 0 3.0 6.3 TSFP-4 Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] τL4) [ns] Package BAR63-02L BAR63-02V BAR63-03W AN049 2.0 1 1.0 10 0.21 5 75 TSLP-2-1 SC79 SOD323 BAR90-02LS AN197 1.3 3.0 0.8 10.0 0.25 1.0 750 TSSLP-2-1 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. 9 RF and Protection Devices Application Guide for Consumer Applications RF Schottky Diodes for Power Detector Product1) BAT62-02L BAT62-02LA4 BAT62-07L4 D BAT15-02LRH Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package AN185 0.35 0 580 2 - - < 10 40 TSLP-2-1 TSSLP-2-1 AN185 0.35 0 580 2 - - < 10 40 TSLP-4-4 on request 0.26 0 230 1 320 10 <5 4 TSLP-2-7 BAT15-07LRH D on request 0.26 0 230 1 320 10 <5 4 TSLP-4-7 BAT15-098LRH Q on request 0.26 0 230 1 320 10 <5 4 TSLP-4-7 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 10 RF and Protection Devices Application Guide for Consumer Applications 5 – 6 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11a/n/ac) and WiMAX (IEEE802.16e) Front-End 2.2 WLAN/WiMAX: 4.9 – 5.9 GHz LNA BPF WLAN/ WiMAX Transceiver IC SPDT Switch Power Detector BPF PA ESD Diode RF MMIC LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGA758L7 AN188 AN228 12.5 1.3 -3 +8 3.3 7.0 TSLP-7-8 IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package Note: Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Application Note Product Gain [dB] NF [dB] BFP840ESD BFP840FESD BFR840L3RH SOT343 TSFP-4 TSLP-3-9 on request BFP740ESD AN219 15.5 1.3 -6 +7 3.0 14.7 BFP740FESD AN220 17.1 1.4 -9 +1 3.0 14.8 TSFP-4 BFR740L3RH AN115 10.0 1.3 -5 +7 3.0 10.0 TSLP-3-9 BFP720ESD TR162 15.2 0.9 -8 +5 3.0 10.3 SOT343 BFP720FESD TR1063 18.6 1.6 -8 +2 3.0 12.2 TSFP-4 Note: SOT343 Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Schottky Diodes for Power Detector Product1) BAT62-02L BAT62-02LA4 BAT62-07L4 D BAT15-02LRH Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package on request 0.35 0 580 2 - - < 10 40 TSLP-2-1 TSSLP-2-1 on request 0.35 0 580 2 - - < 10 40 TSLP-4-4 on request 0.26 0 230 1 320 10 <5 4 TSLP-2-7 BAT15-07LRH D on request 0.26 0 230 1 320 10 <5 4 TSLP-4-7 BAT15-098LRH Q on request 0.26 0 230 1 320 10 <5 4 TSLP-4-7 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 11 RF and Protection Devices Application Guide for Consumer Applications RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] τL4) [ns] Package BAR90-02LS on request 1.3 3.0 0.8 10.0 0.25 1.0 750 TSSLP-2-1 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 12 RF and Protection Devices Application Guide for Consumer Applications 2.3 3.5 GHz WiMAX (IEEE802.16e) Front-End WiMAX: 3.3 – 3.7 GHz LNA BPF Balun WiMAX SPDT Switch Single/Dual Band Power Detector Transceiver IC ESD Diode PA BPF Balun RF MMIC LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGB707L7ESD TR171 14.3 1.3 -8 -5 2.8 5.4 TSLP-7-1 IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package Note: Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Application Note Product Gain [dB] NF [dB] BFP842ESD BFP842FESD BFR842L3RH on request BFP740ESD BFP740FESD BFR740L3RH Note: TR104 15.4 0.8 -10 +3 3.3 15.0 SOT343 TSFP-4 TSLP-3-9 SOT343 TSFP-4 TSLP-3-9 Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF PIN Diode Switches Product1) Application Note rF2) [Ω] BAR63-02L TR132 BAR90-02LS TR146 Notes: @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] 2.0 1 1.3 3.0 1.0 10 0.21 5 75 TSLP-2-1 0.8 10.0 0.25 1.0 750 TSSLP-2-1 @VR [V] τL4) [ns] Package 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. RF Schottky Diodes for Power Detector Product1) BAT62-02L BAT62-02LA4 BAT62-07L4 D BAT15-02LRH BAT15-07LRH BAT15-098LRH D Q Notes: Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package on request 0.35 0 580 2 - - < 10 40 TSLP-2-1 TSSLP-2-1 TSLP-4-4 on request 0.26 0 230 1 320 10 <5 4 TSLP-2-7 TSLP-4-7 TSLP-4-7 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 13 RF and Protection Devices Application Guide for Consumer Applications TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 14 RF and Protection Devices Application Guide for Consumer Applications Dual-Band (2.4 – 6.0 GHz) Wi-Fi Wireless LAN (WLAN, IEEE802.11a/b/g/n) Front-End 2.4 2.4 GHz LNA Rx Diplexer Dual-Band WLAN: 2.4 – 6 GHz Rxg Rxa SPDT Switch 5 GHz LNA Txg Transceiver IC 2.4 GHz PA ESD Diode Tx Diplexer Txa Power Detector 5 GHz PA Dual Band (2.4 GHz & 5.5 GHz) RF Transistor LNAs Application Note Product Gain1) [dB] NF1) [dB] IP-1dB1) [dBm] IIP31) [dBm] Supply [V] Current [mA] Package BFP840ESD BFP840FESD BFR840L3RH on request SOT343 TSFP-4 TSLP-3-9 BFP842ESD BFP842FESD BFR842L3RH on request SOT343 TSFP-4 TSLP-3-9 BFP740ESD BFP740FESD AN187 17.5/13.5 1.3/1.3 -16/-8 -8/+4 2.8 12.0 SOT343 TSFP-4 BFR740L3RH AN115 15.7/10.0 1.1/1.3 -11/-5 0/+7 3.0 10.0 TSLP-3-9 BFP720ESD BFP720FESD AN189 14.0/12.0 1.2/1.4 -15/-5 -9/+6 2.8 13.0 SOT343 TSFP-4 Notes: 1) values at 2.4 GHz/ 5.5 GHz; 2) Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Schottky Diodes for Power Detector Product1) BAT62-02L BAT62-02LA4 BAT62-07L4 D BAT15-02LRH Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package on request 0.35 0 580 2 - - < 10 40 TSLP-2-1 TSSLP-2-1 on request 0.35 0 580 2 - - < 10 40 TSLP-4-4 on request 0.26 0 230 1 320 10 <5 4 TSLP-2-7 BAT15-07LRH D on request 0.26 0 230 1 320 10 <5 4 TSLP-4-7 BAT15-098LRH Q on request 0.26 0 230 1 320 10 <5 4 TSLP-4-7 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 15 RF and Protection Devices Application Guide for Consumer Applications RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] τL4) [ns] Package BAR90-02LS TR146 1.3 3.0 0.8 10.0 0.25 1.0 750 TSSLP-2-1 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 16 RF and Protection Devices Application Guide for Consumer Applications 3 Satellite Receivers - Low Noise Block (LNB) LNB is a part of satellite TV antenna. It is fixed at the feed point of the parabolic dish antenna. It collects signal from the waveguide attached to the feed point. The signal received from the satellite is at very high frequency e.g. C-band or Ku-Band and very low signal strength. The purpose of the LNB is to amplify and down-convert this signal to an IF signal to be able to process at the receiver. The amplification is realized using multiple low noise amplifier (LNA) stages. The most important figure of merit of a LNB is its noise figure and this is primarily determinated by the first stage LNA, which is normally a HEMT device with extremely low noise figures at these high frequencies. For the second or third LNA stage, SiGe RF transistor is an ideal device. The significantly filtered and amplified signal is then fed to mixer to generates the IF signal. It moves after filtering and amplifying into the satellite set-top box receiver for further processing. The LNB is required to amplify the received signal by about 50 to 60 dB for a good quality TV reception accompanied by ~1 dB noise figure. There are two main frequency bands used for satellite TV broadcasting: C-Band at 3.4 to 4.2 GHz range and Ku-Band at 10.7 to 12.75 GHz range. Based on the frequency of operation, the local oscillators (LO) of the mixer is determined to have the same IF band signal. The satellite signal uses vertical and horizontal linear polarization and therefore there are two receive paths with identical characteristics. Infineon offers Si-based solutions for LNB such as the second stage LNA with SiGe: C RF transistors with low noise figure and high gain, SiGe transistors or Schottky diode mixers, PIN diode switch matrix and IF LNA stages. Infineon recommended devices are tabulated in the next pages. 17 RF and Protection Devices Application Guide for Consumer Applications 3.1 C-Band Twin LNB H 1st LNA BPF 2nd LNA 3.4 – 4.2 GHz IF Amplifiers BPF V IF 950 – 2150 MHz Output Self-oscillating Mixer 1st LNA BPF RF Transistor LNAs Application Note Product Gain [dB] NF [dB] IP-1dB [dBm] BFP840ESD BFP740ESD BF7522) Notes: IIP3 [dBm] Supply [V] Current [mA] on request 2) SOT343 on request AN224 12.7 1.6 Package SOT343 -12 -1 5.0 4.8 SOT343 1) as 1st stage LNA; 2) as 2nd stage LNA; 3) Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor IF Amplifiers Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP420 BFP420F AN146 15 2.3 -4 8 5.0 27 SOT343 TSFP-4 BFP410 Note: on request SOT343 Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor Self Oscillating Mixers Notes: Product Application Note Technology fT1) [GHz] Af2) [-] Kf3) [-] fC4) [kHz] Package BFP410 on request Si BFR360F on request Si 25 2.1 1.7E-10 131 SOT343 14 1.75 1.0E-11 - TSFP-3 1) Transit Frequency; 2) Af and Kf are spice model parameters for 1/f noise; 3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA; 4) Please visit our website http://www.infineon.com/rftransistors for alternative devices. 18 RF and Protection Devices Application Guide for Consumer Applications 3.2 Ku-Band Twin LNB H 1st LNA 2nd LNA 3rd LNA BPF Mixer IF Amplifiers BPF Output 1 Switch Matrix 10.7 – 12.75 GHz VCO IF 950 – 2150 MHz V Output 2 Application 1: Twin LNB block diagram H 1st LNA 2nd LNA 3rd LNA BPF BSF IF Amplifiers Mixer Output 1 VCO Switch Matrix IF 950 – 2150 MHz 10.7 – 12.75 GHz V Output 2 Application 2: Quad LNB block diagram nd RF Transistor LNAs (2 rd / 3 stage) Application Note Product Gain [dB] NF [dB] BFP840ESD1) OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] on request SOT343 on request SOT343 TSFP-4 2) BFP720ESD BFP720FESD2) BF8862) Notes: AN225 11.9 Package 1.9 +6 1) as 2nd stage LNA; 2) as 3rd stage LNA; 3) Please visit our website http://www.infineon.com/rftransistors for alternative devices. 19 +17 5.0 9.2 SOT343 RF and Protection Devices Application Guide for Consumer Applications RF Transistor IF Amplifiers Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP640ESD TR1059 16 1.2 -16 -4 3.3 8.3 SOT343 BFP420 BFP420F AN146 15 2.3 -4 8 5.0 27 SOT343 TSFP-4 BFP410 Note: on request Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor Oscillators Notes: Product Application Note Technology fT1) [GHz] Af2) [-] Kf3) [-] fC4) [kHz] Package BFP410 AN235 Si 25 2.1 1.7E-10 131 SOT343 BFP411 on request Si 14 - - - SOT343 1) Transit Frequency; 2) Af and Kf are spice model parameters for 1/f noise; 3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA; 4) Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor Mixers Notes: Product Application Note Technology fT1) [GHz] Af2) [-] Kf3) [-] fC4) [kHz] Package BFP740 BFP740F on request SiGe: C 42 1.8 4.0E-11 - SOT343 TSFP-4 BFP720 BFP720F on request SiGe: C 45 1.45 3.5E-12 211 SOT343 TSFP-4 1) Transit Frequency; 2) Af and Kf are spice model parameters for 1/f noise; 3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA; 4) Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Schottky Diode Mixers Application Note Product1) BAT15 Notes: AN198 CT2) [pF] 0.26 @VR [V] 0 VF [mV] @IF [mA] 230 VF [mV] 1 @IF [mA] 320 IR [μA] 10 <5 @VR [V] Package 4 TSLP-2-7 TSLP-4-7 SOD323 SOT143 SOT323 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. RF PIN Diode Switches Matrix Product1) BAR67-04 Notes: D Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT [pF] @VR [V] τL4) [ns] Package - 2.1 1 1 10 0.35 5 700 SOT23 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. 20 RF and Protection Devices Application Guide for Consumer Applications 4 TV Tuner Applications 4.1 Module Tuner for Analog / Cable / Terrestrial TV VHF I: 47 – 160 MHz Tank Circuit RF Input 47 – 860 MHz VHF II/III: 160 – 470MHz Mixer Oscillator PLL IC Tank Circuit UHF: 470 – 860MHz Tank Circuit Tuner Filter MOSFET Tuner Filter RF MOSFET LNAs Note: Product Application Note ID,max [mA] Ptot,max [mW] gfs [mS] Gp [dB] NF [dB] Cglss [pF] Cdss [pF] Package BF2030W - 40 200 31 23 1.5 2.4 1.3 SOT343 BF5020W - 25 200 33 24 1.2 2.2 1.3 SOT343 BG5120K - 20 200 30 23 1.1 2.2 1.4 SOT343 CRatio IR [nA] @VR [V] Package Please visit our website http://www.infineon.com/rfmosfets for alternative devices. RF Varactor Diodes for Tunable Filters and Tank Circuits Notes: Product1) Application Note CT2) [pF] @VR [V] CT2) [pF] @VR [V] BB555 - 18.7 1 2.1 28 8.9 < 10 30 SCD80 BB659 - 38.3 1 2.6 28 14.7 < 10 30 SCD80 BB689 - 56.5 1 2.7 28 2.9 < 10 30 SCD80 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices. 21 RF and Protection Devices Application Guide for Consumer Applications 4.2 T-DMB/DAB in VHF Band III and L-Band VHF III Tuner Filter MOSFET Tuner Filter 170 – 240 MHz ANT LNA Diplexer Mixer Oscillator PLL Tuner Filter MOSFET Tuner Filter ESD Diode e.g. TUA6045 L - Band Tank Circuit RF MMIC LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGA728L71) AN167 15.0 1.4 -9/+42) -7/+222) 2.8 5.5/0.52) TSLP-7-1 Notes: 1) LNA with two gain modes (high-gain/low-gain); 2) Values in high-gain (HG) / low-gain (LG) mode; 3) Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP540ESD BFP540FESD AN142 12.0 1.6 -21 -13 5.0 3.3 SOT343 TSFP-4 BFP460 TR1038 18.0 1.6 -16 +1 2.8 10.0 SOT343 Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF MOSFET LNAs Note: Product Application Note ID,max [mA] Ptot,max [mW] gfs [mS] Gp [dB] NF [dB] Cglss [pF] Cdss [pF] Package BF2030W - 40 200 31 23 1.5 2.4 1.3 SOT343 BF5020W - 25 200 33 24 1.2 2.2 1.3 SOT343 Please visit our website http://www.infineon.com/rfmosfets for alternative devices. RF Varactor Diodes for Tuning and Tank Circuit Notes: Product1) Application Note CT2) [pF] @VR [V] CT2) [pF] @VR [V] CRatio IR [nA] @VR [V] Package BB555 - 18.7 1 2.1 28 8.9 < 10 30 SCD80 BB659 - 38.3 1 2.6 28 14.7 < 10 30 SCD80 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices. 22 RF and Protection Devices Application Guide for Consumer Applications TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 23 RF and Protection Devices Application Guide for Consumer Applications 4.3 Si-Tuner System for Terrestrial and Cable Digital TV SAW Terrestrial/Cable Digital TV: 40 – 860 MHz LNA VGA Mixer VCO 1 Mixer VCO 2 Si-Tuner RF MMIC LNAs Note: Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGA612 AN098 17.0 2.2 -9 0 5.0 20.0 SOT343 BGA614 AN067 18.5 2.2 -6 +6 5.0 40.0 SOT343 BGA616 AN098 18.5 2.8 0 +11 5.0 60.0 SOT343 Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP540ESD BFP540FESD AN142 12.0 1.6 -21 -13 5.0 3.3 SOT343 TSFP-4 BFP460 TR1038 18.0 1.6 -16 +1 2.8 10.0 SOT343 Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. 24 RF and Protection Devices Application Guide for Consumer Applications 4.4 Tuner and GPS Combi-Application ANT Switch FM/TV (Digital/Analog) FM VHF SPDT Switch FM/Digital Tuner (Telechips) UHF ESD Diode UHF Analog Tuner VHF Processors (Telechips) SPDT Switch GPS GPS Telechips LNA ESD Diode RF MMIC LNAs Note: Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGA925L6 AN265 15.8 0.65 -8 +1 1.5…3.6 4.4 TSLP-6-2 BGA915N7 AN251 AN253 15.5 0.7 -5 +2 1.5…3.6 4.4 TSNP-7-6 BGA231L7 AN257 16.0 0.75 -5 0 1.5…3.6 4.4 TSLP-7-1 BGA715L7 AN161 20.2 0.75 -15 -7 1.5…3.6 3.3 TSLP-7-1 Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP740ESD BFP740FESD BFR740L3RH AN120 19.7 0.7 -17 0 1.8 9.6 SOT343 TSFP-4 TSLP-3-9 BFP640ESD BFP640FESD AN194 16.5 0.7 -16 +1 2.1 7.5 SOT343 TSFP-4 BFP640F AN128 15.2 0.8 -13 0 2.1 8.0 TSFP-4 BFP405 AN149 15.3 1.6 -23 -5 1.8 2.6 SOT343 Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. 25 RF and Protection Devices Application Guide for Consumer Applications RF CMOS Switches Product Application Note Supply [V] Vctrl1) [V] IL2) [dB] Isolation3) [dB] P-0.1dB4) [dBm] Pin,max5) [dBm] Package BGS12A AN175 2.4…2.8 1.4…2.8 0.3/0.6 43/34 > 21 21 FWLP-6-1 BGS12AL7-4 AN175 2.4…2.8 1.4…2.8 0.4/0.5 32/25 > 21 21 TSLP-7-4 BGS12AL7-6 AN175 2.4…2.8 1.4…2.8 0.35/0.5 32/25 > 21 21 TSLP-7-6 BGS15AN16 AN230 2.85…4.7 1.4…2.8 0.25/0.55 38/30 > 30 30 TSNP-16-3 Notes: 1) Digital Control Voltage; 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 3) Isolation at 1.0/ 2.0 GHz; 4) 0.1dB compression point; 5) maximum input power; 6) Please visit our website http://www.infineon.com/rfswitches for alternative devices. TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 26 RF and Protection Devices Application Guide for Consumer Applications 4.5 Cable TV Reverse Path Amplifier Duplexer RF pre - Amp. RF Power Amp. Duplexer Coax In Coax Out RF Reverse Amp. RF Transistor Driver/Buffer Amplifiers Product Application Note Gms [dB] NFmin [dB] OP-1dB [dBm] BFR770W Notes: OIP3 [dBm] Supply [V] Current [mA] Package on request BFP650 BFP650F on request 26.5 1.2 +17 +31 3.0 70.0 SOT343 TSFP-4 BFP450 on request 23.5 2.1 +19 +35 3.0 90.0 SOT343 1) Parameters are measured at 900 MHz; 2) Please visit our website http://www.infineon.com/driveramplifiers for alternative devices. TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 27 RF and Protection Devices Application Guide for Consumer Applications 5 Global Navigation Satellite System Global Satellite Navigation Systems or GNSS are among the fastest growing businesses in the semiconductor industry. Today, GNSS is much more than the well-known GPS, which was introduced for civilian use more than a decade ago. Nations around the world are working on their own navigation satellite systems for strategic reasons and also to offer improved user experience. Today, two GNSS systems are operational: the United States GPS and the Russian GLONASS. The Galileo positioning system being developed by the European Union is expected to be functional by 2014 and Chinese COMPASS is also expected to follow soon. From a civilian usage point, additional systems added to GNSS bring with them the advantages of increased satellite signal reception, increased coverage, higher precision and the facility for additional features such as search and rescue (SAR). The most important market segments since 2008 are personal navigation devices (PND) and GPS/GLONASS enabled mobile phones. The architecture and the performance of the so-called RF front-end is the key contributor to fulfill strict requirements of the GPS/GLONASS system, because it consists of the whole line-up between the GNSS antenna and the integrated GNSS chipset. The main challenges for the growing GNSS-enabled mobile phone market are to achieve high sensitivity and high immunity against interference of cellular signals driven by government regulations for safety and emergency reasons, for example, in the US and Japan. This means reception for GPS/GLONASS signals at very low power levels down to less than -160 dBm in mobile phones in the vicinity of co-existing high power cellular signals. In addition, excellent ESD robustness characteristics and low power consumption for long battery usage duration are mandatory features for portable and mobile phones. Infineon Technologies is a market leader in GPS and other GNSS LNAs and works closely with various reference designs for navigation applications in PND and cellular markets. Infineon Technologies offers a complete product portfolio to all customers designing high performance flexible RF front-end solutions for GNSS: - Low Noise Amplifiers (LNA): consisting of a wide range of products like high performance MMICs as well as cost effective and high end RF transistors - Front-End Module (FEM): Infineon offers the world’s smallest GPS/GLONASS FEMs with LNAs and band-pass filter(s) integrated into a single tiny package with well-optimized performance for navigation in mobile phones - Transient Voltage Suppression (TVS) Diodes: protecting GNSS antenna reliably up to 20 kV - RF Switches: allow for diversity architecture with active antenna 28 RF and Protection Devices Application Guide for Consumer Applications Infineon’s GNSS LNA and FEM products have excellent features including low noise figure, high gain, high linearity, high levels of ESD protection and low current consumption to fulfill customer’s needs to satisfy the increasing requirements of GNSS systems. Infineon’s latest GNSS LNA products covering all current and future GNSS systems include, BGA915N7 with very low noise figure and high out-of-band (OoB) IP3 to enhance the interference immunity, BGA231L7 supporting drop-in approach for the major mobile phone platforms. BGA925L6 as one of the smallest GNSS LNA worldwide with low noise figure and high out-of-band performance, and BGA725L6 as one of the smallest GNSS LNA with high gain and low noise. According to various GPS/GLONASS antenna designs in mobile phones, new GPS/GLONASS FEM products are released with the following two topologies: - SAW-Filter/LNA/SAW-Filter Topology: it offers the most compact integration of the whole GPS frontend into one small package and simplifies the system design. -> BGM781N11 - SAW-Filter/LNA Topology: it enables system design with flexibility to place the GPS/GLONASS antenna without degradation of the GPS/GLONASS performance. -> BGM732L16, BGM1032N7, BGM1033N7 and BGM1034N7 All Infineon GNSS FEM products offer an ESD robustness at the RF input pin higher than 6kV according to IEC61000-4-2 contact discharge standard. Please visit our website www.infineon.com/gps and www.infineon.com/nav.frontend for more details on products for navigation function in mobile phones and portable devices or contact your local Infineon representative. 29 RF and Protection Devices Application Guide for Consumer Applications 5.1 Global Navigation Satellite System (GNSS) with Discrete RF Devices GPS: 1575.42 MHz GLONASS: 1598.0625 – 1609.3125 MHz Galileo & COMPASS (北斗): 1559.052 – 1591.788 MHz BPF LNA Amp BPF Mixer BPF Signal Processing ESD Diode LO GNSS Receiver RF MMIC LNAs Note: Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGA725L6 on request 18.8 0.7 -15 -6 1.5…3.6 3.6 TSLP-6-2 BGA925L6 AN265 AN266 AN267 AN272 AN274 15.8 0.65 -8 +1 1.5…3.6 4.4 TSLP-6-2 BGA915N7 AN251 AN253 15.5 0.7 -5 +2 1.5…3.6 4.4 TSNP-7-6 BGA231L7 AN250 AN257 AN271 AN273 AN276 16.0 0.7 -5 0 1.5…3.6 4.4 TSLP-7-1 TSNP-7-6 BGA715L7 AN161 20.2 0.7 -15 -7 1.5…3.6 3.3 TSLP-7-1 TSNP-7-6 Please visit our website http://www.infineon.com/gps for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP740ESD BFP740FESD BFR740L3RH AN120 19.7 0.7 -17 0 1.8 9.6 SOT343 TSFP-4 TSLP-3-9 BFP640ESD BFP640FESD AN194 16.5 0.7 -16 +1 2.1 7.5 SOT343 TSFP-4 BFP640F AN128 15.2 0.8 -13 0 2.1 8.0 TSFP-4 BFP405 AN149 15.3 1.6 -23 -5 1.8 2.6 SOT343 Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. 30 RF and Protection Devices Application Guide for Consumer Applications TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 31 RF and Protection Devices Application Guide for Consumer Applications 5.2 Global Navigation Satellite System (GNSS) with integrated Front-End Modules GPS: 1575.42 MHz GLONASS: 1598.0625 – 1609.3125 MHz BPF LNA BPF Amp Mixer BPF Signal Processing FEM ESD Diode FEM GNSS Receiver LO RF MMIC FEMs (DC and In-Band Parameters) Product Application Note FEM Conf. Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] BGM1032N7 AN263 AN264 SAW+LNA 14.8 1.65 -6 -6 1.5…3.6 4.0 BGM1033N7 AN261 AN262 SAW+LNA 14.8 1.65 -6 -6 1.5…3.6 4.0 BGM732N16 on request5) SAW+LNA 18.3 1.7 -15 -6 1.5…3.6 3.3 BGM1034N7 AN268 AN269 SAW+LNA 17.0 1.7 -15 -10 1.5…3.6 3.9 BGM781N11 AN184 SAW+LNA +SAW 18.6 1.7 -15 -7 1.5…3.6 3.3 IMD2²) [dBm] IIP33) [dBm] Package RF MMIC FEMs (Out-of-Band Parameters) Jammer signal selectivity [dBc] 800 MHz 1800 MHz 2400 MHz IP-1dB1) [dBm] AN263 AN264 744) 43 54 30 -85 60 TSNP-7-10 BGM1033N7 AN261 AN262 54 43 54 30 -37 60 TSNP-7-10 BGM732N16 on request5) 50 40 60 30 - - TSNP-11-2 BGM1034N7 AN268 AN269 55 43 56 22 -33 55 TSNP-7-10 BGM781N11 AN184 90 80 72 20 - - TSNP-11-2 Product Application Note BGM1032N7 Notes: 1) IP-1dB is measured at 900 and 1800 MHz; 2) IMD2 is measured at 1575 MHz with fin = 787.5 MHz with Pin = +15 dBm; 3) IIP3 is measured with f1 = 1713 MHz and f2 = 1851 MHz with P1/P2 = +10 dBm; 4) Measured at 787.5 MHz Notch. Out of the Notch: min. 53 dBc; 5) BGM732N16 is not for new designs anymore. Please take BGM1034N7 for your new designs. 6) All Infineon GNSS FEM products offer ESD robustness higher than 6 kV at RF input pin according to IEC61000-4-2 contact discharge standard. 7) Please visit our www.infineon.com/nav.frontend for alternative devices. 32 RF and Protection Devices Application Guide for Consumer Applications TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 33 RF and Protection Devices Application Guide for Consumer Applications 6 Cordless Phones 6.1 1.9 GHz Cordless Phones LNA 1.9 GHz Rx BPF Transceiver IC SPDT Switch Tx ESD Diode PA RF Transistor LNAs Product Application Note Gain [dB] NF [dB] OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] Package BFP540ESD BFP540FESD AN057 19.0 0.9 - +20 2.0 5.0 SOT343 TSFP-4 BFP420 BFP420F AN015 18.5 1.1 - +20 2.0 5.0 SOT343 TSFP-4 BFP460 on request 16.0 1.1 - +22 3.0 5.0 SOT343 BFP640ESD BFP640FESD on request 22.5 0.6 - +22 3.0 6.0 SOT343 TSFP-4 Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor Driver/Buffer Amplifiers Note: Product Application Note Gms [dB] NFmin [dB] OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] Package BFP750 TR1047 23.5 1.2 +16 +30 3.0 60.0 SOT343 BFP650 on request 20.5 0.9 +15 +29 3.0 30.0 SOT343 BFP650F on request 21.5 1.4 +17 +31 3.0 80.0 TSFP-4 BFP450 AN026 15.5 1.7 +16 +29 3.0 50.0 SOT343 BFR380F on request 13.5 1.6 +17 +29 3.0 40.0 TSFP-3 Please visit our website http://www.infineon.com/driveramplifiers for alternative devices. RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT [pF] @VR [V] τL4) [ns] Package BAR63-02L BAR63-02V BAR63-03W AN049 2.0 1 1.0 10 0.21 5 75 TSLP-2-1 SC79 SOD323 BAR90-02LS on request 1.3 3.0 0.8 10.0 0.25 1.0 750 TSSLP-2-1 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. 34 RF and Protection Devices Application Guide for Consumer Applications RF CMOS Switches Product Application Note Supply [V] Vctrl1) [V] IL2) [dB] Isolation3) [dB] P-0.1dB4) [dBm] Pin,max5) [dBm] Package BGS12AL7-4 AN175 2.4…2.8 1.4…2.8 0.4/0.5 32/25 > 21 21 TSLP-7-4 Notes: 1) Digital Control Voltage; 2) IL = Insertion Loss at 1.0/ 2.0 GHz; 3) Isolation at 1.0/ 2.0 GHz; 4) 0.1dB compression point; 5) maximum input power; 6) Please visit our website http://www.infineon.com/rfswitches for alternative devices. TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 35 RF and Protection Devices Application Guide for Consumer Applications 6.2 2.4 GHz Cordless Phones LNA 2.4 GHz BPF Rx SPDT Switch Transceiver IC Tx ESD Diode BPF BPF Buffer Amp. RF MMIC LNAs Product Application Note Gain [dB] TR152 17.7 BGA628L7 1) 2) NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package 1.4 -18 -10 2.8 5.2 TSLP-7-8 2) 2) 2) 2) BGA777L7 TR1006 16.5/-7 1.2/7 -6/0 -2/+6 2.8 4.1/0.6 TSLP-7-1 BGA622 AN069 12.6 1.3 -15 -4 2.8 5.4 SOT343 Notes: 1) LNA with two gain modes (high-gain/low-gain); 2) Values in high-gain (HG) / low-gain (LG) mode; 3) Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP740ESD AN217 17.6 0.78 -7 -4 3.3 13.1 SOT343 BFP740FESD AN171 17.4 0.8 -13 -3 3.6 14.7 TSFP-4 BFP640ESD AN218 16.5 0.83 -12 +9 3.0 7.3 SOT343 BFP640FESD AN129 15.5 0.9 -11 0 3.0 6.3 TSFP-4 Package Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor Driver/Buffer Amplifiers Note: Product Application Note Gma [dB] NFmin [dB] OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] BFR380F on request 11.0 1.6 +17 +29 3.0 40.0 TSFP-3 BFP450 AN145 13.5 2.2 +19 +30 2.4 90.0 SOT343 BFP650 AN153 17.5 1.4 +17 +30 2.4 70.0 SOT343 Please visit our website http://www.infineon.com/driveramplifiers for alternative devices. RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] τL4) [ns] Package BAR63-02L BAR63-02V BAR63-03W TR131 2.0 1 1.0 10 0.21 5 75 TSLP-2-1 SC79 SOD323 BAR90-02LS AN197 1.3 3 0.8 10.0 0.25 1.0 750 TSSLP-2-1 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. 36 RF and Protection Devices Application Guide for Consumer Applications TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 37 RF and Protection Devices Application Guide for Consumer Applications 6.3 5.8 GHz Cordless Phones LNA 5.8 GHz BPF Rx SPDT Switch Transceiver IC Tx ESD Diode BPF BPF Buffer Amp. RF MMIC LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGA758L7 AN188 AN228 12.5 1.3 -3 +8 3.3 7.0 TSLP-7-8 IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package Note: Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] BFP840ESD BFP840FESD BFR840L3RH SOT343 TSFP-4 TSLP-3-9 on request BFP740ESD AN219 15.5 1.3 -6 +7 3.0 14.7 SOT343 BFP740FESD AN220 17.1 1.4 -9 +1 3.0 14.8 TSFP-4 BFR740L3RH AN115 10.0 1.3 -5 +7 3.0 10.0 TSLP-3-9 BFP720ESD TR162 15.2 0.93 -8 +5 3.0 10.3 SOT343 BFP720FESD TR1063 18.6 1.6 -8 +2 3.0 12.2 TSFP-4 OIP3 [dBm] Supply [V] Current [mA] Package Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor Driver/Buffer Amplifiers Product Application Note Gma [dB] NFmin [dB] OP-1dB [dBm] BFP780 Note: on request BFP750 BFP750F AN246 14.0 1.7 +15 +27 3.0 60.0 SOT343 TSFP-4 BFP650 BFP650F on request 10.5 2.0 +6.5 +29.5 3.0 70.0 SOT343 TSFP-4 Please visit our website http://www.infineon.com/driveramplifiers for alternative devices. RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] τL4) [ns] Package BAR90-02LS on request 1.3 3.0 0.8 10.0 0.25 1.0 750 TSSLP-2-1 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. 38 RF and Protection Devices Application Guide for Consumer Applications RF Schottky Diodes for Power Detector Application Note CT2) [pF] VR [V] VF [mV] IF [mA] VF [mV] IF [mA] IR [μA] VR [V] Package BAT62-02L - 0.35 0 580 2 - - < 10 40 TSLP-2-1 BAT62-02LA4 - 0.35 0 580 2 - - < 10 40 TSSLP-2-1 - 0.35 0 580 2 - - < 10 40 TSLP-4-4 - 0.26 0 230 1 320 10 <5 4 TSLP-2-7 Product1) BAT62-07L4 D BAT15-02LRH BAT15-07LRH D - 0.26 0 230 1 320 10 <5 4 TSLP-4-7 BAT15-098LRH Q - 0.26 0 230 1 320 10 <5 4 TSLP-4-7 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 39 RF and Protection Devices Application Guide for Consumer Applications 7 Active Antenna for Portable Applications (Tuner, Cellular, GPS, SDARs…) ANT 1st LNA 2nd LNA BPF 3rd LNA Receiver IC Cable ESD Diode st RF Transistor LNAs (1 /2 nd stage) Application Note Gain [dB] NF [dB] OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] Package BFP840ESD1) on request 20.5 0.75 +7 +20 1.5 5.0 SOT343 1) on request 19.5 0.75 +10 +24 2.0 6.0 SOT343 BFP740ESD1) on request 19.0 0.9 +8 +22 3.0 6.0 SOT343 on request 19.0 0.8 +8 +22 3.0 6.0 TSFP-4 on request 21.0 0.7 +12 +27 3.0 6.0 SOT343 on request 21.5 0.6 +11 +26 3.0 6.0 TSFP-4 on request 18.0 1.0 +11 +26 3.0 6.0 SOT343 on request 14.5 1.0 +12 +28 3.0 6.0 SOT343 Product BFP842ESD BFP740FESD BFP640ESD 1) 2) BFP640FESD2) BFP540ESD 3) 3) BFP460 Notes: 1) Parameters are measured at 5.5 GHz. OP-1dB and OIP3 are measured at 20 mA; 2) Parameters are measured at 2.4 GHz. OP-1dB and OIP3 are measured at 30 mA; 3) Parameters are measured at 2.4 GHz. OP-1dB and OIP3 are measured at 20 mA; 4) Please visit our website http://www.infineon.com/rftransistors for alternative devices. rd RF Transistor LNAs (3 stage) Notes: Product Application Note Gain [dB] NF [dB] OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] Package BFR380F on request 11.0 1.6 +17 +29 3.0 40.0 TSFP-3 BFP450 on request 13.5 2.2 +19 +30 2.4 90.0 SOT343 BFP650 on request 17.5 1.4 +17 +30 2.4 70.0 SOT343 1) Parameters are measured at 2.4 GHz; 2) Please visit our website http://www.infineon.com/rftransistors for alternative devices. TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 40 RF and Protection Devices Application Guide for Consumer Applications 8 Cellular Modems for Data Communication A general block diagram of a modern mobile phone front-end of 2G/2.5G and 3G/3.5G/4G modem (GSM/EDGE/UMTS/LTE/TDS-CDMA/TDS-LTE) is shown in the block diagram below. Infineon Technologies is one of the leading companies with broad product portfolio to offer high performance RF front-end components for various mobile and wireless applications by using industry standard silicon process. For the mobile phone front-end, Infineon offers various RF CMOS primary antenna switches, diversity antenna switches, as well as MMIC SiGe LNAs and Schottky diode power detectors. Infineon’s RF CMOS switches are widely used for band selection/switching or diversity switching at the antenna. PIN diodes can be used for switching if there is a requirement on much lower IMD generation in the mobile phone. Low barrier power detection Schottky diodes are used for precise output power control after the power amplifier. Our SiGe MMIC LNAs with their excellent low noise figure enhance the sensitivity of the RF modem by several dB and offer system layout flexibility by suppressing noise contribution from losses of signal lines and from the SAW filters as well as the receiver. For detailed information about our product portfolio for cellular modems and their applications, please refer to our Application Guide – Part 1: Mobile Communication. Or you can contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get all the support you might need. ANT Switch 2G/2.5G Transceiver IC Power Detector PA 3G/4G Transceiver IC Duplexer LNA 41 SAW RF and Protection Devices Application Guide for Consumer Applications 9 Bluetooth (BT) Front-End for Bluetooth Class 1 LNA 2.45 GHz Rx BPF Bluetooth Transceiver IC SPDT Switch Tx ESD Diode Buffer Amp. Harmonic Filter RF MMIC LNAs Product Application Note Gain [dB] TR152 17.7 BGA628L7 1) 2) NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package 1.4 -18 -10 2.8 5.2 TSLP-7-8 2) 2) 2) 2) BGA777L7 TR1006 16.5/-7 1.2/7 -6/0 -2/+6 2.8 4.1/0.6 TSLP-7-1 BGA622 AN069 12.6 1.3 -15 -4 2.8 5.4 SOT343 Notes: 1) LNA with two gain modes (high-gain/low-gain); 2) Values in high-gain (HG) / low-gain (LG) mode; 3) Please visit our website http://www.infineon.com/rfmmics for alternative devices. RF Transistor LNAs Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BFP740ESD AN217 17.6 0.8 -7 -4 3.3 13.1 SOT343 BFP740FESD AN171 17.4 0.8 -13 -3 3.6 14.7 TSFP-4 BFP640ESD AN218 16.5 0.8 -12 +9 3.0 7.3 SOT343 BFP640FESD AN129 15.5 0.9 -11 0 3.0 6.3 TSFP-4 Note: Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor Driver/Buffer Amplifiers Note: Product Application Note Gma [dB] NFmin [dB] OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] Package BFR380F on request 11.0 1.6 +17 +29 3.0 40.0 TSFP-3 BFP450 AN145 13.5 2.2 +19 +30 2.4 90.0 SOT343 BFP650 AN153 17.5 1.4 +17 +30 2.4 70.0 SOT343 Please visit our website http://www.infineon.com/driveramplifiers for alternative devices. RF PIN Diode Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT3) [pF] @VR [V] τL4) [ns] Package BAR90-02LS AN197 1.3 3.0 0.8 10.0 0.25 1.0 750 TSSLP-2-1 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. 42 RF and Protection Devices Application Guide for Consumer Applications TVS ESD Diodes Product Application Note VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD0P2RF-02LS ESD0P2RF-02LRH AN178 ±5.3 ±20 ±29@±16 ±38@±30 1 - - 0.2 1 TSSLP-2-1 TSLP-2-17 ESD0P1RF-02LS ESD0P1RF-02LRH on request ±15 ±10 ±36@±8 ±48@±16 1.5 - - 0.1 1 TSSLP-2-1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC 61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices. 43 RF and Protection Devices Application Guide for Consumer Applications 10 Base Stations Rx LPF LNA Buffer Amp LPF Mixer IF Amp LPF Baseband IC VCO Tx PA Mixer Driver Amp LPF LPF IF Amp RF Transistor LNAs Product Application Note Gms [dB] NFmin [dB] OP-1dB [dBm] OIP3 [dBm] Supply [V] Current [mA] Package BFP740ESD BFP740FESD on request 22.5 0.55 +8 +22 3.0 6.0 SOT343 TSFP-4 BFP640ESD BFP640FESD on request 22.5 0.6 +8 +22 3.0 6.0 SOT343 TSFP-4 BFP460 on request 16.0 1.1 +8 +22 3.0 5.0 SOT343 OIP3 [dBm] Supply [V] Current [mA] Package Notes: 1) Parameters are measured at 1.9 GHz; 2) Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Transistor Driver/Buffer Amplifiers Product Application Note Gms [dB] NFmin [dB] OP-1dB [dBm] BFP780 Notes: on request BFP750 TR1047 TR1048 23.5 1.2 +16 +30 3.0 60.0 SOT343 BFP650 on request 20.5 0.9 +15 +29 3.0 30.0 SOT343 BFP650F AN153 21.5 1.3 +17 +31 3.0 80.0 TSFP-4 BFP450 AN026 15.5 1.7 +16 +29 3.0 50.0 SOT343 BFR380F AN075 13.5 1.6 +17 +29 3.0 40.0 TSFP-3 1) Parameters are measured at 1.9 GHz; 2) Please visit our website http://www.infineon.com/driveramplifiers for alternative devices. RF Transistor Oscillators Note: Product Application Note Technology fT1) [GHz] Af2) [-] Kf3) [-] fC4) [kHz] Package BFP410 on request Si BFR360F on request Si 25 2.1 1.7E-10 131 SOT343 14 1.75 1.0E-11 - TSFP-3 1) Transit Frequency; 2) Af and Kf are spice model parameters for 1/f noise; 3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA; 4) Please visit our website http://www.infineon.com/rftransistors for alternative devices. 44 RF and Protection Devices Application Guide for Consumer Applications RF Varactor Diodes Product1) BBY51 Application Note CT2) [pF] @VR [V] CT2) [pF] @VR [V] CRatio IR [nA] @VR [V] Package - 5.3 1 3.1 4 1.7 < 10 6 SOT23 - 1.8 1 1.1 4 1.6 < 10 6 TSLP-2-1 - 5.3 1 2.4 3 2.2 < 10 4 SOT23 D BBY52-02L BBY53 Notes: D 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices. RF Transistor Mixers Note: Product Application Note Technology fT1) [GHz] Af2) [-] Kf3) [-] fC4) [kHz] Package BFP540 on request Si 30 2.0 8.9E-11 86 SOT343 BFP420 on request Si 25 2.0 6.6E-11 95 SOT343 BFR360F on request Si 14 1.75 1.0E-11 - TSFP-3 1) Transit Frequency; 2) Af and Kf are spice model parameters for 1/f noise; 3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA; 4) Please visit our website http://www.infineon.com/rftransistors for alternative devices. 45 RF and Protection Devices Application Guide for Consumer Applications 11 RF Function Blocks with Discrete Devices 11.1 Driver Amplifiers Driver amplifier or also known as pre-power amplifier is an important functional block in systems requiring high power output. The power amplifier requires a certain power level of the input signal to operate in the right mode, which in some cases cannot be delivered by the transceiver IC. In this case, a driver amplifier is required to provide the right signal level to the power amplifier (PA). Driver amplifiers are generally operated in class-A mode to enable high linearity and high gain, thereby keeping the spurious signals generated by the PA low, by reducing intermodulation products. Class-A amplifiers are also the right choice for broadband operation at low power levels. Infineon offers several RF transistors to be used as driver amplifiers with different current capabilities, linearity, gain and output powers as in the table below. Please visit our website www.infineon.com/driveramplifiers or www.infineon.com/rftransistors for more details on products for driver amplifier applications or contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get all the support you might need. RF Transistor Driver/Buffer Amplifiers Product Application Note Gms [dB] NFmin [dB] OP-1dB [dBm] BFP780 Notes: OIP3 [dBm] Supply [V] Current [mA] Package on request BFP750 AN245 AN246 23.5 1.2 +16 +30 3.0 60.0 SOT343 BFP650 AN145 20.5 0.9 +15 +29 3.0 30.0 SOT343 BFP650F AN153 21.5 1.4 +17 +31 3.0 80.0 TSFP-4 BFP450 AN026 AN050 15.5 1.7 +16 +29 3.0 50.0 SOT343 BFR380F AN196 13.5 1.6 +17 +29 3.0 40.0 TSFP-3 1) Parameters are measured at 1.9 GHz; 2) Please visit our website http://www.infineon.com/driveramplifiers for alternative devices. 46 RF and Protection Devices Application Guide for Consumer Applications 11.2 Broadband Amplifier Broadband amplifiers are easy to use solutions for the system designer as they cover a wide frequency range. They are useful in two scenarios: - Using the device for broadband operation - Usability of the same device for different application frequencies Applications like CATV and Digital TV require broadband operation of their components. Infineon offers three MMIC LNAs for TV application with varying current consumption and linearity, as shown in the table below. They are LNAs with Darlington circuits offering low noise figure and high linearity. These LNAs can be used for frequencies up to 6 GHz and matched to 50 Ohm at input and output. In additions, Infineon offers another MMIC LNA BGB741L7ESD which is also a broadband amplifier that can be used up to 6 GHz with no external matching required. It has an integrated feedback through which it delivers stable, broadband operation with in-built temperature compensation. Please refer to the application note at the following link to gain deeper insight into BGB741L7ESD used as LNA for FM, VHF & UHF TV, WiMAX applications. RF MMIC Broadband Amplifiers Product Application Note Gain [dB] NF [dB] IP-1dB [dBm] IIP3 [dBm] Supply [V] Current [mA] Package BGB741L7ESD1) AN207 19.6 1.45 -7.6 5.2 4.0 20.0 TSLP-7-1 3) BGA612 AN098 17.0 2.2 -9 0 5.0 20.0 SOT343 BGA6143) AN067 18.0 2.2 -6 6 5.0 40.0 SOT343 3) BGA616 AN098 18.0 2.8 0 11 5.0 60.0 SOT343 BGA728L72) AN163 AN231 15.8 1.3 -10 -7 2.8 5.85 TSLP-7-1 BGA4164) Notes: AN070 20.0 1.7 -17.5 -8.8 3.0 5.4 SOT143 4) BGA420 on request 17.0 2.2 -2.5 - 3.0 6.7 SOT343 BGA4274) on request 22.0 2.0 - - 3.0 9.4 SOT343 1) The useful frequency range is from DC to 6 GHz, and the measured frequency range is 2.3 – 2.7 GHz; 2) The useful frequency range is from 40 MHz to 3 GHz, and the measured frequency range is 470 – 860 MHz; 3) The useful frequency range is from DC to 2.5 GHz, and the measured frequency range is from DC to 1.5 GHz; 4) The useful frequency range is from DC to 3 GHz, and the measured frequency is 900 MHz; 5) Please visit our website http://www.infineon.com/broadbandamplifiers for alternative devices. High performance general purpose RF transistors are also well suitable for broadband amplifier applications by using a simple RC feedback circuit between collector and base. This kind of solutions offers you the full flexibility to define the frequency band of interest. Please visit our website www.infineon.com/broadbandamplifiers or www.infineon.com/rftransistors for more details on products for driver amplifier applications or contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get all the support you might need. 47 RF and Protection Devices Application Guide for Consumer Applications 11.3 Wide Bandwidth Single Pole Double Throw Switch RF Common Ictrl1 Ictrl2 J1 J2 PIN Diode PIN Diode RF PIN Diodes Switches Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT [pF] @VR [V] τL4) [ns] Package BAR63-02L BAR63-02V BAR63-03W AN049 2.0 1 1.0 10 0.21 5 75 TSLP-2-1 SC79 SOD323 BAR90-02LRH BAR90-02LS AN197 1.3 3 0.8 10 0.25 1 750 TSLP-2-7 TSSLP-2-1 BAR90-098LRH AN197 1.3 3 0.8 10 0.25 1 750 TSLP-4-7 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. 48 RF and Protection Devices Application Guide for Consumer Applications 11.4 Discrete Voltage-Controlled Oscillators Vdd Si BJT Transistor RFout Vctrl Varactor Diode Application Example: VCO in Colpitts Topology RF Transistor Oscillators Product Application Note Technology fT1) [GHz] BFP410 on request Si BFR360F on request Si Note: Af2) [-] Kf3) [-] fC4) [kHz] Package 25 2.1 1.7E-10 131 SOT343 14 1.75 1.0E-11 - TSFP-3 1) Transit Frequency; 2) Af and Kf are spice model parameters for 1/f noise; 3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA; 4) Please visit our website http://www.infineon.com/rftransistors for alternative devices. RF Varactor Diodes Product1) BBY51 D BBY52-02L BBY53 Notes: D Application Note CT2) [pF] @VR [V] CT2) [pF] @VR [V] CRatio IR [nA] @VR [V] Package - 5.3 1 3.1 4 1.7 < 10 6 SOT23 - 1.8 1 1.1 4 1.6 < 10 6 TSLP-2-1 - 5.3 1 2.4 3 2.2 < 10 4 SOT23 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices. 49 RF and Protection Devices Application Guide for Consumer Applications 11.5 Voltage Tuned Filter Vcontrol Varactor Diode RF Output RF Input Resonators Application 1 RF Input RF Output Varactor Diode Varactor Diode Vcontrol Application 2 RF Varactor Diodes Product1) BBY51 D BBY52-02L BBY53 Notes: D Application Note CT2) [pF] @VR [V] CT2) [pF] @VR [V] CRatio IR [nA] @VR [V] Package - 5.3 1 3.1 4 1.7 < 10 6 SOT23 - 1.8 1 1.1 4 1.6 < 10 6 TSLP-2-1 - 5.3 1 2.4 3 2.2 < 10 4 SOT23 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices. 50 RF and Protection Devices Application Guide for Consumer Applications 11.6 Single Schottky Diode Detector Schottky Detector Diode Detected Output RF Input RF Choke Filter Capacitor Filter Resistor RF Schottky Diodes for Power Detector Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] BAT62-02L AN185 0.35 0 580 2 - - < 10 40 TSLP-2-1 BAT62-02LA4 AN185 0.35 0 580 2 - - < 10 40 TSSLP-2-1 AN185 0.35 0 580 2 - - < 10 40 TSLP-4-4 Product1) BAT62-07L4 D BAT15-02LRH Package on request 0.26 0 230 1 320 10 <5 4 TSLP-2-7 BAT15-07LRH D on request 0.26 0 230 1 320 10 <5 4 TSLP-4-7 BAT15-098LRH D on request 0.26 0 230 1 320 10 <5 4 TSLP-4-7 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 51 RF and Protection Devices Application Guide for Consumer Applications 11.7 High Isolation Schottky Diode Pair for Power Detection to Antenna Switch PA Detector Diode Differential Amplifier Reference Diode RF Schottky Diodes for Power Detector Product1) Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package BAT62-09S D AN185 0.65 0.2 190 1 - - 10 3 SOT363 BAT63-07W D - 0.65 0.2 190 1 - - 10 3 SOT343 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 52 RF and Protection Devices Application Guide for Consumer Applications 11.8 Wide Bandwidth PIN Diode Variable Attenuator Vtune RF RF PIN Diode VREF Application 1: Wide Bandwidth PIN Diode Variable Attenuator Bias1 ANT Bias1 DC Block Tx Rx PIN Diode PIN Diode Application 2: PIN Diode Variable Attenuator RF PIN Diodes for Attenuator Product1) Application Note rF2) [Ω] @IF [mA] rF2) [Ω] @IF [mA] CT [pF] @VR [V] τL4) [ns] Package BAR64-02LRH BAR64-02V BAR64-03W on request 12.5 1 2.1 10 0.23 20 1550 TSLP-2-7 SC79 SOD323 BAR50-02LRH BAR50-02V BAR50-03W on request 14 1 3 10 0.24 1 1100 TSLP-2-7 SC79 SOD323 BA595 on request 210 0.1 4.5 10 0.35 1 1600 SOD323 BAR14-1 BAR15-1 BAR16-1 on request 2800 0.01 7 10 0.5 1 1000 SOT23 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 100 MHz; 3) at 1 MHz; 4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA; 5) Please visit our website http://www.infineon.com/pindiodes for alternative devices. 53 RF and Protection Devices Application Guide for Consumer Applications 11.9 Passive Mixer with Schottky diodes LOin RFin IFout Passive Mixer with Single Schottky Diode LOin RFin IFout Balanced Mixer with Schottky Diodes IFout RFin LOin Double Balanced Mixer with Schottky Diodes RF Schottky Diode Mixers Product1) Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package BAT15 AN198 0.26 0 230 1 320 10 <5 4 TSLP-2-7 TSLP-4-7 SOD323 SOT143 SOT323 BAT24-02LS AN190 0.21 0 230 1.0 320 10.0 < 5.0 4.0 TSSLP-2-1 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 54 RF and Protection Devices Application Guide for Consumer Applications 11.10 Active Mixer with Bipolar Transistors VCC IFout LOin RFin Circuit Example of active mixer with a bipolar transistor RF Transistor Mixers Note: Product Application Note Technology fT1) [GHz] Af2) [-] Kf3) [-] fC4) [kHz] Package BFP540 on request Si 30 2.0 8.9E-11 86 SOT343 BFP420 on request Si 25 2.0 6.6E-11 95 SOT343 BFR360F on request Si 14 1.75 1.0E-11 - TSFP-3 1) Transit Frequency; 2) Af and Kf are spice model parameters for 1/f noise; 3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA; 4) Please visit our website http://www.infineon.com/rftransistors for alternative devices. 55 RF and Protection Devices Application Guide for Consumer Applications 12 Interface Protection In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better applications. The race to pack more and more high-speed functions in a smaller space accelerates miniaturization roadmaps. However, the downscale of semiconductor chips together with the increase of doping levels results in a dramatic reduction of the thin gate oxide layer and the width of the pn-junction in semiconductor chips. This, in combination with greater circuit population, increases the susceptibility of the semiconductor chip to ESD. The subsequent failures of the electronic equipment can be noticed as hard failures, latent damage or temporary malfunction. Hard failures are easier to spot, and in general require the failed device to be replaced. In the best case the failure will be detected before the equipment leaves the factory and customers will never receive it. Failures leading to temporary malfunction of equipment or latent failures are quite common and very difficult to detect or trace in the field. Temporary malfunctions may go unreported but can result in negative customer impressions as the user may need to reset the equipment. A product recall for swapping or repairing due to ESD failures may cause the company a cost several times higher than the cost of the device itself. An efficient system design normally includes the implementation of a shielded chassis in order to minimize ESD risks. Nevertheless, ESD strikes represent a permanent threat to device reliability as they can easily find a way to bypass the shielded chassis and be injected into the IC/ASICs. Connectors and antennas exposed to the outside world are possible entry points of electrostatic discharges generated by end users. The only way to ensure stable operation and maximum reliability at the system level is to ensure that equipment is properly protected against electrostatic discharge and transients by an external protection device. Infineon’s Value Proposition Improve ESD immunity at system level by providing first-class protection beyond IEC 61000-4-2 level-4 standard. - Superior multi-strike absorption capability. - Safe and stable clamping voltages to protect even the most sensitive electronic equipment. - Protection devices that fully comply with high-speed signal quality requirements. - Array solutions that boost space saving in the board and reduce part count. - Easy-to-use single devices for space-constrained applications. - Discrete components that drain extremely wire low leakage currents and help to extend battery duration. - Packages enabling easy PCB layout. For detailed information about our TVS diode portfolio and their applications, please refer to our Application Guide – Part 4: Protection or our ESD Protection Brochure www.infineon.com/tvs.brochure. You can also visit our website for protection devices: www.infineon.com/protection. 56 RF and Protection Devices Application Guide for Consumer Applications 12.1 Interface Protection with Discrete ESD TVS Diodes Infineon offers various high performance types of discrete TVS protection devices for mobile phone applications to prevent our customers’ mobile phones from ESD attacks. Following is a short overview of the available TVS protection devices from Infineon for various RF and digital interfaces of mobile phones to the external world. For detailed information about our TVS diode portfolio and their applications, please refer to our Application Guide – Part 4: Protection or our ESD Protection Brochure www.infineon.com/tvs.brochure. You can also visit our website for protection devices: www.infineon.com/protection. Analog/Digital Interfaces Headset TV/Audio ESD5V3S1B ESD5V3L1B ESD8V0-series LCD ESD5V3U-series ESD5V3L1B-series USB1.1/2.0 ESD5V3U-series USB3.0 ESD3V3U4ULC Camera ESD5V3U-series ESD5V3L1B-series SIM Card SD Card MM Card ESD5V3U4U-HDMI ESD5V3U-series ESD5V3L1B-series I/O Data ESD8V0-series ESD5V3S1B-series ESD5V3L1B-series HDMI ESD5V3U4U-HDMI ESD5V3U-series Human Interfaces ESD8V0-series ESD5V3L1B-series ESD5V3L1U-02LRH SWP ESD3V3XU1US Ethernet TVS3V3L4U (Surge) Keypad RF Interfaces NFC ESD18VU1B ESD0P2RF Electronic Equipment e.g. mobile/ wireless/ portable devices, consumer & industrial units ESD0P2RF ESD0P1RF GPS ESD0P2RF ESD0P1RF Mobile TV ESD0P2RF ESD0P1RF ESD0P2RF ESD0P1RF RPP Diode Power Supply USB Charger 57 WLAN FM RF and Protection Devices Application Guide for Consumer Applications 12.2 Reverse Polarity Protection (RPP) Circuit DC GND +Vs/ GND GND +Vs +Vs DC GND/ +Vs RPP Diodes RPP Diode +Vs GND DC protected circuit DC protected circuit Prevents damage to the circuit System works with reverse polarity AF Schottky Diodes for RPP Product1) Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package BAS3005A-02V - 10 5 260 10 450 500 < 300 30 SC79 BAS3005A-02LRH - 10 5 260 10 450 500 15 5 TSLP-2-17 BAS3010A-03W - 28 5 220 10 450 1000 < 200 30 SOD323 BAS3010S-02LRH - 10 5 340 100 570 1000 30 10 TSLP-2-17 BAS3020B - 30 5 350 1000 530 2000 40 30 SOT363 BAS4002S-02LRH - 7 5 330 10 470 200 0.5 5 TSLP-2-17 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. AF Schottky Diodes for advanced RPP (system works also with reverse polarity) Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package BAS4002A-RPP Q - 2.2 5 390 10 550 100 <2 30 SOT143 BAS3007A-RPP Q - 10 5 350 100 550 700 < 100 24 SOT143 Product1) Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 58 RF and Protection Devices Application Guide for Consumer Applications 12.3 Reverse Polarity Protection for USB Charger RPP Diode DC Adapter USB Charger IC USB Power ICHG SYSTEM + MOSFET Battery MOSFET AF Schottky Diodes for RPP Product1) Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package BAS4002A-02LRH - 7 5 330 10 470 200 0.5 5 TSLP-2-17 BAS3005A-02LRH - 10 5 260 10 450 500 15 5 TSLP-2-17 BAS3010S-02LRH - 10 5 340 100 570 1000 30 10 TSLP-2-17 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 59 RF and Protection Devices Application Guide for Consumer Applications 12.4 Rectifier Circuit with Schottky Diodes Bridge Rectifier AC Power Supply IC DC EMI/EMC filter AF Schottky Diodes for Rectifier Circuit Product1) BGX50A Application Note VR,max2) [V] IF,max3) [mA] VBR [V] IR [μA] @VR [V] VF [V] @IF [mA] τrr [ns] Package D - 50 140 50 < 0.2 50 < 1.3 100 < 6.0 SOT143 BAS4002A-RPP D - 40 200 40 < 10 40 < 0.62 <2 - SOT143 BAS3007A-RPP D - 30 350 30 < 350 30 < 0.4 < 100 - SOT143 Notes: 1) D=Dual; T=Triple; Q=Quadruple; 2) Reverse voltage in maximum ratings; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 60 3) Forward current in maximum ratings; RF and Protection Devices Application Guide for Consumer Applications 12.5 Clipping and Clamping Vs After Filtering Digital spikes Discrete spike filter RF Schottky Diodes for Clipping and Clamping Product1) Application Note CT2) [pF] @VR [V] VF [mV] @IF [mA] VF [mV] @IF [mA] IR [μA] @VR [V] Package BAT54 series - < 10 1 < 320 1 < 800 100 <2 25 SOT23 SOT323 TSLP-2-7 SC79 BAT64 series - 4 1 320 1 570 100 <2 25 SOT23 SOT323 SCD80 8 SOT23 SOT323 SOT343 SOT363 40 SOT23 SOT143 SOT323 SOT343 TSLP-2-1 70 SOT23 SOT143 SOT323 SOT343 SOT363 SCD80 TSLP-2-1 BAT68 series BAS40 series BAS70 series Notes: - - - 0.7 3 1,5 0 0 0 318 310 375 1 1 1 1) D=Dual; T=Triple; Q=Quadruple; 2) at 1 MHz; 3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices. 61 390 720 705 10 40 10 < 10 < 10 < 10 RF and Protection Devices Application Guide for Consumer Applications Abbreviations Abbr. Terms Abbr. Terms Amp Amplifier NFC Near Field Communication AN Application Note OoB Out of Band ANT Antenna P2P Point-to-Point BB Baseband PA Power Amplifier BJT Bipolar Junction Transistor PC Personal Computer BPF Band Pass Filter PCB Printed Circuit Board BSF Band Suppression Filter PLL Phase-Locked Loop BT Bluetooth PND Personal Navigation Devices CATV Cable TV RF Radio Frequency CHG Charge RoHS Restriction of Hazardous Substances CMMB Chinese Multimedia Mobile Broadcast RPD RF & Protection Devices COMPASS Chinese Navigation Satellite System BeiDou RPP Reverse Polarity Protection DC Direct Current Rx Receive DECT Digital Enhanced Cordless Telecommunications SAR Search and Rescue EDGE Enhanced Data Rates for GSM Evolution SAW Surface Acoustic Wave SC(D) Semiconductor (Diode) Package SD Card Secure Digital Memory Card SDARs Satellite Digital Audio Radio Services SIM Card Subscriber Identity Module Card SOD Small Outline Diode Package SOT Small Outline Transistor Package SWP Single Wire Protocol T-DAB Terrestrial Digital Audio Broadcasting T-DMB Terrestrial Digital Multimedia Broadcast EMI Electromagnetic Interference ESD Electro-Static Discharge FEM Front-End Module FM Frequency Modulation (76 – 108 MHz) FWLP Fine Pitch Wafer Level Package GLONASS Global Orbiting Navigation Satellite System GNSS Global Navigation Satellite System GPS Global Positioning System (1575.42 MHz) GSM Global System for Mobile Communication HDMI High-Definition Multimedia Interface TDS-CDMA HEMT High-Electron-Mobility Transistor TDS-LTE HG / LG High-Gain / Low-Gain IEC International Electrotechnical Commission IC Integrated Circuit IF Intermediate Frequency I/O Input / Output LCD Liquid Crystal Display LNA Low Noise Amplifier LNB Low Noise Block LO Local Oscillator LTE Long-Term Evolution LPF Low Pass Filter Mbps Megabits per Second MG Middle Gain MM Card Multimedia Card MMIC Monolithic Microwave Integrated Circuit MOSFET Metal-Oxide-Semiconductor Field Effect Transistor 62 Time Division-Synchronous Code Division Multiple Access Time Division-Synchronous Long-Term Evolution TRX Transceiver TSFP Thin Small Flat Package T(S)SLP Thin (Super) Small Leadless Package TSNP Thin Small Non Leaded Package TV Television TVS Transient Voltage Suppression Tx Transmit UHF Ultra High Frequency (470 – 860MHz) UMTS Universal Mobile Telecommunications System USB Universal Serial Bus VCO Voltage Controlled Oscillator VGA Video Graphics Array VHF Very High Frequency (30 – 300MHz) WDCT Worldwide Digital Cordless Telecommunication WiMAX Worldwide Interoperability for Microwave Access WLAN Wireless Local Area Network RF and Protection Devices Application Guide for Consumer Applications Alphanumerical List of Symbols Symbol Term Unit Af Cdss Cglss flicker noise exponent Output capacitance Gate-1 input capacitance [pF] [pF] CT Total Diode capacitance [pF] ESD Voltage of ESD pulse [kV] fc Corner frequency of 1/f noise [kHz] fT Transit frequency of transistor [GHz] gfs Gma Gms GP ID,max Forward transconductance Maximum available power gain Maximum stable power gain Power Gain Maximum drain current [ms] [dB] [dB] [dB] [mA] IF Forward current [mA] IR Reserve current [µA] IPP Maximum peak pulse current [mA] IIP3 Input 3rd intercept point [dBm] IL Insertion loss [dB] IMD2 2nd order intermodulation distortion [dBm] IP-1dB Input 1dB compression point [dBm] Kf flicker noise constant - NF Noise figure [dB] rd OIP3 Output 3 intercept point [dBm] OP-1dB Output 1dB compression point [dBm] P-0.1dB 0.1dB compression point [dBm] Pin,max Maximum input power [dBm] Ptot,max Maximum total power dissipation [mW] Rdyn Dynamic Resistance [Ω] rF Differential forward resistance [Ω] VBR Breakdown voltage [V] VCL Clamping voltage [V] Vctrl Digital control voltage [V] Vdd DC supply voltage [V] VF Forward voltage [mV] VR Reverse voltage [V] VRWM Reverse working voltage [V] τL Storage time [ns] τrr Reverse recovery time [ns] 63 RF and Protection Devices Application Guide for Consumer Applications Package Information Package (JEITA-code) X L×W×H PIN-Count Scale 1:1 All products are available in green (RoHS compliant). All Dimensions in mm SC79 (SC-79) 2 1.6 × 0.8 × 0.55 2 1.7 × 0.8 × 0.7 3:1 3 2.0 × 2.1 × 0.9 4 2.0 × 2.1 × 0.9 4 7 3:1 11 6 6:1 TSNP-16-3 2.5 × 2.5 × 0.73 2:1 16 2.3 × 2.3 × 0.73 2:1 64 3 1.4 × 1.2 × 0.55 4:1 TSLP-3-9 ( - ) 1.0 × 0.6 × 0.39 3 1.0 × 0.6 × 0.31 5:1 5:1 7 TSLP-7-4 ( - ) 2.0 × 1.3 × 0.4 7 2.3 × 1.5 × 0.4 3:1 3:1 TSNP-7-10 TSNP-7-6 0.778×0.528×0.34 3:1 TSNP-11-2 2 FWLP-6-1 1.4 × 1.26 × 0.31 1.2 × 1.2 × 0.55 4:1 TSLP-7-8 ( - ) 1.4 × 1.26 × 0.39 TSFP-4 ( - ) TSLP-7-1 ( - ) 1.1 × 0.7 × 0.4 4:1 TSLP-7-6 ( - ) 7 6 2:1 TSLP-2-17 1.0 × 0.6 × 0.39 2.9 × 2.4 × 1.0 4:1 TSLP-6-2 1.2 × 0.8 × 0.39 4:1 3 5:1 TSLP-4-7 ( - ) 1.2 × 0.6 × 0.4 4 TSFP-3 ( - ) 2.0 × 2.1 × 0.9 7:1 TSLP-4-4 ( - ) 2.9 × 2.4 × 1.1 3:1 2 SOT143 (SC-61) 2:1 TSLP-2-7 ( - ) 0.62 × 0.32 × 0.31 5:1 4 6 TSSLP-2-1 ( - ) 2 3 SOT363 (SC-88) 3:1 TSLP-2-1 ( - ) 1.0 × 0.6 × 0.4 2.5 × 1.25 × 0.9 2:1 SOT343 (SC-82) 3:1 2 2 3:1 SOT323 (SC-70) SOT23 ( - ) SOD323 (SC-76) SCD80 (SC-80) 7 1.4 × 1.26 × 0.39 3:1 7 2.3 × 1.7 × 0.73 3:1 RF and Protection Devices Application Guide for Consumer Applications Support Material Data Sheets / Application Notes / Technical Reports www.infineon.com/rfandprotectiondevices Products: - RF CMOS Switches www.infineon.com/rfswitches - RF MMICs www.infineon.com/rfmmics - RF Transistors www.infineon.com/rftransistors - RF Diodes www.infineon.com/rfdiodes - PIN Diodes www.infineon.com/pindiodes - Schottky Diodes www.infineon.com/schottkydiodes - Varactor Diodes www.infineon.com/varactordiodes - ESD/EMI Protection Devices www.infineon.com/tvsdiodes Brochures: - Selection Guide www.infineon.com/rpd_selectionguide - Application Guide for Protection www.infineon.com/rpd_appguide_protection - Application Guide for Consumer Applications www.infineon.com/rpd_appguide_consumer - Application Guide for Industrial Applications www.infineon.com/rpd_appguide_industrial - ESD Protection Solutions – Consumer and Wireless Communication www.infineon.com/tvs.brochure - GPS Front-End Components for Mobile and Wireless Applications www.infineon.com/gps Sample Kits www.infineon.com/rpdkits Evaluation Boards For more information please contact your sales counterpart at Infineon. 65