Si7404DN Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A) • Halogen-free According to IEC 61249-2-21 Available 0.013 at VGS = 10 V 13.3 • TrenchFET® Power MOSFET 0.015 at VGS = 4.5 V 12.4 • Compliant to RoHS Directive 2002/95/EC 0.022 at VGS = 2.5 V 10.2 VDS (V) 30 APPLICATIONS PowerPAK® 1212-8 • Li-lon Battery Protection S 3.30 mm 3.30 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7404DN-T1-E3 (Lead (Pb)-free) Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Single Avalanche Current Single Avalanche Energy (Duty Cycle 1 %) Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C ID 0.1 mH IDM IAS EAS IS TA = 25 °C TA = 70 °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendationsb,c PD 10 s Steady State 30 ± 12 V 13.3 10.6 8.5 6.8 40 15 11 3.2 3.8 2.0 TJ, Tstg Unit 1.3 1.5 0.8 - 55 to 150 260 A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t 10 s Steady State Steady State RthJA Typical 26 65 1.9 Maximum 33 81 2.4 Unit °C/W Maximum Junction-to-Case (Drain) RthJC Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71658 S11-2045-Rev. G, 17-Oct-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7404DN Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V VGS = 10 V, ID = 13.3 A 0.010 0.013 RDS(on) VGS = 4.5 V, ID =12.4 A 0.0125 0.015 VGS = 2.5 V, ID = 5 A 0.019 0.022 gfs VDS = 5 V, ID = 13.3 A 50 VSD IS = 3.2 A, VGS = 0 V 0.75 1.2 20 30 VDS = 15 V, VGS = 4.5 V, ID = 13.3 A 5.8 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a 1.5 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 µA 40 A S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 27 VDD = 15 V, RL = 15 ID 1 A, VGEN = 4.5 V, RG = 6 tr Rise Time td(off) Turn-Off DelayTime Fall Time tf Source-Drain Reverse Recovery Time trr nC 7.1 IF = 3.2 A, dI/dt = 100 A/µs 40 39 60 64 100 33 50 45 90 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 thru 3 V 35 35 2.5 V 30 ID - Drain Current (A) ID - Drain Current (A) 30 25 20 15 10 25 20 15 TC = 125 °C 10 2V 5 5 25 °C - 55 °C 1, 1.5 V 0 0.0 www.vishay.com 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 3.0 Document Number: 71658 S11-2045-Rev. G, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7404DN Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3000 2500 0.04 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.05 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 0.01 2000 Ciss 1500 1000 500 VGS = 10 V 0.00 Coss Crss 0 0 5 10 15 20 25 30 35 40 0 5 10 ID - Drain Current (A) 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 VDS = 15 V ID = 13.3 A 8 VGS = 10 V ID = 13.3 A 1.6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 15 6 4 2 1.4 1.2 1.0 0.8 0 0 10 20 30 40 0.6 - 50 50 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.05 50 R DS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 13.3 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.04 ID = 5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71658 S11-2045-Rev. G, 17-Oct-11 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7404DN Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.30 50 ID = 2 mA 40 0.00 30 Power (W) V GS(th) Variance (V) 0.15 - 0.15 20 - 0.30 10 - 0.45 - 0.60 - 50 - 25 0 25 50 75 TJ - Temperature (°C) 100 125 0 0.01 150 0.1 1 10 Time (s) 100 600 Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* 100 μs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms TA = 25 °C Single Pulse 1s 10 s 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 71658 S11-2045-Rev. G, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7404DN Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71658. Document Number: 71658 S11-2045-Rev. G, 17-Oct-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000