Si7806DN Datasheet

Si7806DN
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (Ω)
ID (A)
0.011 at VGS = 10 V
14.4
0.0175 at VGS = 4.5 V
12.6
• TrenchFET® Power MOSFET
• PWM Optimized
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07-mm Profile
Available
RoHS*
COMPLIANT
APPLICATIONS
• DC/DC Converters
– Secondary Synchronous Rectifier
– High–Side MOSFET in Synchronous Buck
PowerPAK 1212-8
S
3.30 mm
D
3.30 mm
1
S
2
S
3
G
4
D
8
G
D
7
D
6
D
5
S
Bottom View
N-Channel MOSFET
Ordering Information: Si7806DN-T1
Si7806DN–T1–E3 (Lead (Pb)–free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
PD
10 secs
Steady State
30
± 20
V
14.4
11.6
9.2
7.4
40
3.2
3.8
2.0
TJ, Tstg
1.3
1.5
0.8
– 55 to 150
260
Soldering Recommendationsb,c
Unit
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t ≤ 10 sec
Steady State
Steady State
RthJA
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
°C/W
Maximum Junction-to-Case (Drain)
RthJC
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71869
S-51210–Rev. C, 27-Jun-05
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Si7806DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Gate Threshold Voltage
Test Condition
Min
1.0
Typ
Max
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
IDSS
VDS = 30 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
VDS ≥ 5 V, VGS = 10 V
µA
40
A
VGS = 10 V, ID = 14.4 A
0.009
0.011
VGS = 4.5 V, ID = 12.6 A
0.0145
0.0175
gfs
VDS = 15 V, ID = 14.4 A
34
VSD
IS = 3.2 A, VGS = 0 V
0.77
Qg
VDS = 15 V, VGS = 4.5 V, ID = 14.4 A
8.5
11
19
24
Ω
S
1.2
V
Dynamicb
Total Gate Charge
Qgt
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
VDS = 15 V, VGS = 10 V, ID = 14.4 A
3.0
Rg
Turn-On Delay Time
1
td(on)
Rise Time
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
3.6
IF = 3.2 A, di/dt = 100 A/µs
2
3.4
8
15
12
20
25
40
10
20
35
70
Ω
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
40
40
35
35
VGS = 10 thru 4 V
30
I D – Drain Current (A)
I D – Drain Current (A)
30
25
20
15
10
3V
25
20
15
5
5
0
0.0
0
0.0
25 °C
– 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
Output Characteristics
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TC = 125 °C
10
3.5
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71869
S-51210–Rev. C, 27-Jun-05
Si7806DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
1400
0.025
C – Capacitance (pF)
r DS(on) – On-Resistance (Ω)
1200
Ciss
0.020
VGS = 4.5 V
0.015
VGS = 10 V
0.010
1000
800
600
Coss
400
Crss
0.005
200
0
0.000
0
5
10
15
20
25
30
35
0
40
10
15
20
25
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.8
10
VDS = 15 V
ID = A
8
VGS = 10 V
ID = 14.4 A
1.6
rDS(on) – On–Resistance
(Normalized)
V GS – Gate-to-Source Voltage (V)
5
6
4
2
1.4
1.2
1.0
0.8
0.6
- 50
0
0
4
8
12
16
20
- 25
0
25
50
75
100
125
150
TJ – Junction Temperature (°C)
Qg – Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.025
50
r DS(on) – On-Resistance (Ω)
I S – Source Current (A)
ID = 14.4 A
TJ = 150 °C
10
TJ = 25 °C
1
0.0
0.020
ID = 5 A
0.015
0.010
0.005
0.000
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71869
S-51210–Rev. C, 27-Jun-05
1.2
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7806DN
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.6
50
0.4
ID = 250 µA
40
0.0
Power (W)
V GS(th) Variance (V)
0.2
- 0.2
- 0.4
30
20
- 0.6
10
- 0.8
- 1.0
- 50
- 25
0
25
50
75
100
125
0
0.01
150
TJ – Temperature (°C)
0.1
1
10
Time (sec)
100
600
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
rDS(on) Limited
IDM Limited
P(t) = 0.0001
I D – Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0.1
TC = 25 °C
Single Pulse
P(t) = 10
dc
BVDSS Limited
0.01
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
10–3
4. Surface Mounted
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71869
S-51210–Rev. C, 27-Jun-05
Si7806DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71869.
Document Number: 71869
S-51210–Rev. C, 27-Jun-05
www.vishay.com
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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