Si7806DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 14.4 0.0175 at VGS = 4.5 V 12.6 • TrenchFET® Power MOSFET • PWM Optimized • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile Available RoHS* COMPLIANT APPLICATIONS • DC/DC Converters – Secondary Synchronous Rectifier – High–Side MOSFET in Synchronous Buck PowerPAK 1212-8 S 3.30 mm D 3.30 mm 1 S 2 S 3 G 4 D 8 G D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: Si7806DN-T1 Si7806DN–T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C)a ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range PD 10 secs Steady State 30 ± 20 V 14.4 11.6 9.2 7.4 40 3.2 3.8 2.0 TJ, Tstg 1.3 1.5 0.8 – 55 to 150 260 Soldering Recommendationsb,c Unit A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 sec Steady State Steady State RthJA Typical 24 65 1.9 Maximum 33 81 2.4 Unit °C/W Maximum Junction-to-Case (Drain) RthJC Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71869 S-51210–Rev. C, 27-Jun-05 www.vishay.com 1 Si7806DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Gate Threshold Voltage Test Condition Min 1.0 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 µA 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA IDSS VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea Diode Forward Voltagea VDS ≥ 5 V, VGS = 10 V µA 40 A VGS = 10 V, ID = 14.4 A 0.009 0.011 VGS = 4.5 V, ID = 12.6 A 0.0145 0.0175 gfs VDS = 15 V, ID = 14.4 A 34 VSD IS = 3.2 A, VGS = 0 V 0.77 Qg VDS = 15 V, VGS = 4.5 V, ID = 14.4 A 8.5 11 19 24 Ω S 1.2 V Dynamicb Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = 15 V, VGS = 10 V, ID = 14.4 A 3.0 Rg Turn-On Delay Time 1 td(on) Rise Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω tr Turn-Off DelayTime td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 3.6 IF = 3.2 A, di/dt = 100 A/µs 2 3.4 8 15 12 20 25 40 10 20 35 70 Ω ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 40 40 35 35 VGS = 10 thru 4 V 30 I D – Drain Current (A) I D – Drain Current (A) 30 25 20 15 10 3V 25 20 15 5 5 0 0.0 0 0.0 25 °C – 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 TC = 125 °C 10 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71869 S-51210–Rev. C, 27-Jun-05 Si7806DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1400 0.025 C – Capacitance (pF) r DS(on) – On-Resistance (Ω) 1200 Ciss 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 1000 800 600 Coss 400 Crss 0.005 200 0 0.000 0 5 10 15 20 25 30 35 0 40 10 15 20 25 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.8 10 VDS = 15 V ID = A 8 VGS = 10 V ID = 14.4 A 1.6 rDS(on) – On–Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 5 6 4 2 1.4 1.2 1.0 0.8 0.6 - 50 0 0 4 8 12 16 20 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) Qg – Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.025 50 r DS(on) – On-Resistance (Ω) I S – Source Current (A) ID = 14.4 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.020 ID = 5 A 0.015 0.010 0.005 0.000 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71869 S-51210–Rev. C, 27-Jun-05 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7806DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.6 50 0.4 ID = 250 µA 40 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 30 20 - 0.6 10 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 0 0.01 150 TJ – Temperature (°C) 0.1 1 10 Time (sec) 100 600 Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 rDS(on) Limited IDM Limited P(t) = 0.0001 I D – Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TC = 25 °C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71869 S-51210–Rev. C, 27-Jun-05 Si7806DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71869. Document Number: 71869 S-51210–Rev. C, 27-Jun-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1