Revolution to rely on. Infineon’s CoolSiC™ technology changes the market forever. www.infineon.com/coolsic Introduction The future of power semiconductors The use of SiC based power semiconductor solutions has shown a huge increase over the last years, it is a revolution to rely on. Driving forces behind this market development are the following trends: energy saving, size reduction, system integration and improved reliability. The combination of a fast silicon based switch with a SiC Diode – is often termed a “hybrid” solution. In recent years Infineon has manufactured several million hybrid modules and has seen them installed in various customer products. The increase of switching frequency for a converter using unipolar SiC transistors can result in dramatically reduced volume and weight of the magnetic components. From an analysis carried out by Infineon, a converter built on SiC devices is a third of the size and 25 percent of the weight compared to a current Si based reference solution. Thanks to the significant reduction in volume and weight, the system costs can also be reduced by more than 20 percent. low switching losses new system topologies high fs small magnets higher efficiency small housing low overall losses high end solution low system cost solution Over the next few years, SiC solutions will expand into other application fields such as industrial or traction drives. The reasons for this are the market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages – resulting from reduced heat 2 mainstream solution sink requirements. As shown in figure above, SiC is already being used for high end and niche solutions. Today’s designs use these benefits to reduce system cost in specific application areas. 3 highest partial load efficiency ››Temperature independent switching losses Benefits ››Doubling power density ››System efficiency improvement ››Reduced cooling requirements ››Enabling higher frequency/increased power density ››Higher system reliability due to lower operating temperature ››Reduction of total system cost Applications ››Solar ››Chargers & storage ››Motor drives ››UPS ››Server ››SMPS ››Medical ››Welding ››Others 4 Improve efficiency and solution costs Infineons Silicon Carbide (SiC) activities are now merged under the headline CoolSiC™. The SiC devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used Silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of Silicon Carbide allow creating devices, which by far outperform the corresponding Si ones, and enable reaching otherwise unattainable efficiency levels. CoolSiC™ Schottky Diodes The differences in material properties between Silicon Carbide and Silicon limit the fabrication of practical Silicon unipolar Diodes (Schottky Diodes) to a range up to 100 V–150 V, with relatively high on-state resistance and leakage current. On the other hand, SiC Schottky Barrier Diodes (SBD) can reach a much higher breakdown voltage. Infineon offers products up to 1200 V as discrete and up to 1700 V in modules. CoolSiC™ J-FET The revolutionary CoolSiC™ 1200 V SiC JFET family, in combination with the proposed Direct Drive Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so far unattainable efficiency levels. Features Unique SiC MOSFET characteristics over traditional 1200 V silicon devices Low Qg and device capacitances Zero reverse recovery losses of body diode Temperature independent switching losses Threshold-free on-state characteristic compared to IGBT Infineon’s unique SiC MOSFET advantage over SiC competition Superior gate oxide reliability Best in class switching and conduction losses Higher transconductance (gain) Threshold voltage, Vth = 4 V Short-circuit robustness ›› ›› ›› ›› ›› ›› ›› ›› ›› Silicon Carbide (SiC) opens up new degrees of freedom for designers to harness never before seen levels of efficiency and system flexibility. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristics. Infineon’s unique 1200 V SiC MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness. This is the revolution you can rely on. All this results in a robust SiC MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS converters, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches Benefits: Best in class system performance Highest efficiency for reduced cooling effort Longer lifetime and higher reliability Higher frequency operation Reduction in system cost Increased in power density Reduced system complexity Ease of design and implementation IGBT compatible driving (+15 V/-5 V) ›› ›› ›› ›› ›› ›› ›› ›› allowing for system size reduction, power density increases and high lifetime reliability. 4 3 Based on volume experience and compatibility know-how, Infineon introduces the revolutionary SiC technology which enables radical new product designs. The revolutionary CoolSiC™ 1200V MOSFET represents Infineon’s leading edge solution to bring actual designs towards new unattainable efficiency- and power density levels. CoolSiC™ MOSFET represents the best solution for Solar, UPS and Industrial Drives applications by combining best performance, reliability, safety and ease of use. Applications ››Photo-voltaic Inverters (PV) ››Uninterruptable Power Supplies (UPS) ››Switch Mode Power Supplies (SMPS) ››Energy Storage / Battery Charging ››Industral Drives ››Medical 10x lower Eoff 10x lower Eoff 3 2 2 1 1 0 0 CoolSiC™ MOSFET Turn-Off losses Eoff @ 800V, RG=2.2Ω, VGE/GS=-5/15 V 4 20 10 10 4 20 ID / A ID / A 30 40 30 40 Turn-On losses Eon @ 800V, RG=2.2Ω, VGE/GS=-5/15 V 4 3 Eon / mJ Eon / mJ Features ››Benchmark in Power density ››Purely capacitive switching ››Threshold free on state characteristic for CoolSiC™ MOSFET. Revolution to rely on. Eoff / mJ Eoff / mJ CoolSIC™ 2x lower Eon 2x lower Eon 3 2 2 1 CoolSiC™ MOSFET, 45 mΩ, 25°C CoolSiC™ MOSFET, 45 mΩ, 175°C Highspeed 3 Si IGBT 40 A, 25°C Highspeed 3 Si IGBT 40 A, 175°C 1 0 0 20 10 10 20 ID / A ID / A 30 40 30 40 Note: SiC FWD diode used during testing 5 1EDI EiceDRIVER™ Compact Perfect fit to CoolSiC™ MOSFET CoolSiC™ MOSFET products CoolSiC™ MOSFET first products are targeted for photovoltaic inverters, battery charging and energy storage. Output characteristic 50 TO-247-4pin package contains an additional CoolSiC™ MOSFET, 45 mΩ, 25°C connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3pin version, especially On-State Current ID/IC in A 40 CoolSiC™ MOSFET, 45 mΩ, 175°C Threshold-free on-state 30 Highspeed 3 Si IGBT 40 A, 25°C Highspeed 3 Si IGBT 40 A, 175°C 20 10 at higher currents and higher switching frequencies. Easy1B modules offer a very good thermal interface, a low stray inductance and 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 On-State Voltage VDS /VCE in V robust design as well as PressFIT connections. Lead products Schematic Type Single switch RDSON VDS IMW120R045M1 Gate 45 mOhm 1200 V Source Single switch Gate Driver Source Half bridge with NTC Booster with NTC TO247-4pin Drain IMZ120R045M1 45 mOhm 1200 V FF11mR12W1M1_B11 11 mOhm 1200 V FF23mR12W1M1_B11 23 mOhm 1200 V DF11mR12W1M1_B11 11 mOhm 1200 V DF23mR12W1M1_B11 23 mOhm 1200 V Power Source +3V3 VCC1 VCC2 100n SGND IN GND1 IN+ IN- OUT+ OUTGND2 +15V 4µ7 2R2 3R3 0V 4µ7 -5V Application example ››HIGHSPEED IGBT driver – 300 mil wide body package, 125 ns propagation delay ––1EDI20H12AH : 2 A minimum peak output current, ideal for SiC MOSFET with Ron 20 mOhm and higher ––1EDI60H12AH : 6 A minimum peak output current, ideal for SiC MOSFET with Ron below 20 mOhm, e.g. 10 mOhm lead product Easy1B PressFIT ››MOSFET driver – 150 mil slim body package, 125 ns propagation delay Selectively sampling on request. 6 Suited for applications up to 1200 V, these galvanically isolated gate driver ICs are based on our Coreless Transformer Technology, which enables an exceptional common mode transient immunity (CMTI) of 100 kV/µs. These devices are offered with separate outputs for source and sink operation and provide minimum peak output currents of up to 6 amperes. Their flexible output supply capability starting from 12 V up to 35 V across VCC2 and GND2 make them ideal for the bipolar gate voltage needs of the SiC MOSFETs from Infineon. A propagation delay mismatch of less than 10ns and an input filter time of only 40ns make them ideal for high switching frequency applications up to 4MHz such as switched mode power supplies. Package TO247-3pin Drain Features ››Tight propagation delay matching ––Enables application design for shorter dead times and therefore improved efficiency, e.g. in drives and SMPS ››Better common-mode transient immunity (CMTI) ––Improves resilience against larger voltage spikes that lead to false fault reporting (dV/dt robustness) ––Enables fast switching designs for SiC and GaN ››Temperature has less impact on operating conditions ––Simplifies power supply dimensioning due to less input current variation and reduces control effort for timing ››Lower input current consumption ––Allows controlling of the driver directly from μ-controller and therefore reduces circuit complexity (BOM) and additional timing impact ––1EDI20N12AF : 2 A minimum peak output current, ideal for single discrete SiC MOSFET with Ron 40 mOhm typical ––1EDI60N12AF : 6 A minimum peak output current, ideal for parallel connection of more than 3 discrete MOSFETs with 40 mOhm typical 7 Naming system 650 V CoolSiC™ Schottky Diodes generation 5: best price/performance Discrete Silicon Carbide MOSFETs I M W 120 R 45 M1 Company I = Infineon Reliable grade blank = Industrial A = Automotive S = Standard Device M = xxx This product family has been optimized from all key aspects including junction structure, substrate and die attach. It represents a well-balanced product family which offers state of the art performance and high surge current capability at competitive cost level. Innovation: optimized junction, substrate and die attach Infineon SiC Schottky Diode generation 5 is optimized with regard to all key aspects relevant for high power and high efficiency SMPS applications. Series name (2 digits) M1 = S iC MOSFET first generation Breakdown voltage Devided by 10 120 = 1200 V Module solutions with Silicon Carbide MOSFETs Al p+ p+ p+ p+ Ti p+ epi layer New! FF 11 mR 12 W1 M1 Topology FF= Halfbride DF = Chopper module RDS(on) [mΩ] Scale unit RDS(on) m = mΩ _B11 Constructrion variant B11= PressFIT Series name (2 digits) M1 = SiC MOSFET first generation Package type (max. 2 digits) W1 = Easy1B W2 = Easy2B Breakdown voltage Devided by 100 12 = 1200 V New! 8 CoolSiC™ MOSFET modules are marked with the typical RDS(on) instead of nominal current. Field stop layer SiC substrate 110 µm Backside & packaging Diffusion soldering Substrate: thin wafer technology On the substrate level, Infineon introduced thin wafer technology, at the later stage of our SiC Diode production thin wafer process is used to reduce the wafer thickness by about 2/3, this significantly reduces the substrate resistance contribution thus improve both VF and thermal performance. Die attach: diffusion soldering On the backside, package level diffusion soldering is introduced, which significantly improves the thermal path between lead frame and the Diode, enhancing the thermal performance. With the same chip size and power dissipation, the junction temperature is reduced by 30°C. 40 ent 35 ge c urr 30 25 sur R = RDS(on) As a seperator between voltage und RDS(on) Al wire bond Junction: merged PN structure On the junction level, it has an optimized merged PN structure. Compared to competitors, Infineon’s SiC Diode has additional P doped area, together with the N doped EPI layer, it forms a PN junction Diode. Thus it is a combination of Schottky Diode and PN Junction Diode. Under normal conditions it works like a standard Schottky Diode. Under abnormal conditions such as lighting, AC line drop-out, it works like a PN Junction Diode. At high current level, the PN Junction Diode has significantly lower VF than Schottky Diode, this leads to less power dissipation, thus significantly improving the surge current capability. IF (A) RDS(on) [mΩ] 20 15 10 5 0 0.00 2.00 4.00 8.00 10.00 12.00 14.00 VF (V) Combined characteristic Schottky Diode forward characteristic Bipolar PN Diode forward characteristic 60 50 IF [A/mm2] Package type (max. 2 digits) W = TO-247 Z = TO-247 4pin 40 30 20 10 0 0 2 Generation 5 4 VF [V] 6 8 Generation 2, 3 Diffusion Soldering RthJC=2.0 K/W RthJC=1.5 K/W 9 1200 V CoolSiC™ Schottky Diodes generation 5: best price/performance Excellent efficiency and surge current capability By using hybrid Si IGBT/SiC Diode sets, designers of industrial applications will gain flexibility for system optimization compared to Silicon only based solution. System improvements by higher efficiency, higher output power or higher switching frequency are enabled by SiC Diodes. In the new 1200 V CoolSiC™ Schottky Diodes generation 5 technology, the zero reverse recovery charge comes with a reduction of forward voltage and extended surge current capability compared to previous generation. The ultra-low forward voltage, even at high operating temperature, results in 30 percent static loss gain versus previous generation during full-load condition. Implementing generation 5 CoolSiC™ Diodes in combination with Infineon’s 1200 V HighSpeed 3 IGBT, designers can achieve outstanding system level performance and reliability. 8 A SiC Diode comparison from different suppliers Key benefits 1200 V generation 5 versus 1200 V generation 2 ››Up to 30% lower static losses ››Reduced cooling requirements through lower Diode losses and lower case temperatures ››High system reliability by extended surge current Surge current: 10 A Diodes 16 2.4 14 2.2 12 +31% +21% 1.4 +29% 14 x Inom Surge current with generation 5 9 8 5 5 4 2 1.2 1.0 14 10 6 1.6 Generation 2 Generation 5 Competitor 1 Tj = 25°C 0 Competitor 2 Generation 2 Generation 5 Competitor 1 Diode losses Diode losses % 50 0.40 20 40 60 80 100 0.20 0.10 0.19% 5 kW 10 kW Output power IDW10G120C5 10 8 6 4 2 0 -2 -4 -6 -8 -10 0.07 IDW10S120 Competitor 2 100 120 Competitor 3 Competitor 4 Reverse recovery charge of SiC versus Silicon devices The majority carrier characteristics of the device imply no reverse recovery charge and the only contribution to the switching losses comes from the tiny displacement charge of capacitive nature. In the same voltage range, Silicon devices show a bipolar component resulting in much higher switching losses. The graph shows the comparison between various 600 V devices. Improved system efficiency (PFC in CCM mode operation, full load, low line) The fast switching characteristics of the SiC Diodes provide clear efficiency improvements at system level. The performance gap between SiC and highend Silicon devices increases with the operating frequency. 94.0 93.5 93.0 92.5 91.5 91.0 IDW10G120C5 80 T=125°C, VDC= 400 V, IF=6 A, di/dt=200 A/µs 60 120 180 Switchting frequency [kHz] IFX SiC 6 A 10 Competitor 1 92.0 1 kW Nominal power [%] IDW10S120 60 94.5 0.22% 0.20% 40 95.0 0.31% 0.27% 0.30 Efficiency [%] Losses [% from Pout] Losses [W] 40 0 20 0.1 0.13 0.16 0.19 0.22 0.25 Time [µs] SiC Schottky Diode: SDB06S60 Ultrafast Si pin Diode Si pin double Diode (2*300 V) 0.43% 0 Best performance 10 SiC Schottky Diode generation 5 offers the optimum efficiency and ruggedness. Lower VF means lower conduction loss and lower Qc means lower switching loss. Qc x VF is the figure of merit for efficiency and comparison indicates that generation 5 matches the best competitors on the market. In addition, SiC generation 5 offers a surge current robustness far better than the one offered by the most efficient products. Thus, under abnormal conditions this surge current capability offers excellent device robustness. All around, SiC generation 5 offers excellent efficiency and surge current capability at the same time. No other SiC Diode product on the market offers such good balance between efficiency and surge current capability. Some vendors offer better efficiency but weak surge current, while others offer better surge current but are less attractive in efficiency. 0.50 10 20 Surge current capability Competitor 2 Front-end booster stage of a photovoltaic Inverter: Vin = 500 V, Vout = 800 V, 20 kHz, Tj = 125°C 20 30 0 Tj = 150°C 30 40 0 I [A] 1.8 +60% IFSM/ Inom Forward voltage @ Inom [V] 2.6 Lowest VF - Level with generation 5 Performance frontier 50 Infineon Forward voltage: 30 A Diodes 2.0 Figure of Merit (Qc x VF / nC-V) [Efficiency] Key features generation 5 versus generation 2 ››Low forward voltage (VF) ››Mild positive temperature dependency of VF ››Extended surge current capability up to 14 times nominal current ››Up to 40 A rated Diode 60 Comp. 1 6 A 240 Comp. 2 6 A 11 CoolSiC™ Silicon Carbide Schottky Diodes generation 5 I D H X G X C 5 Bridge rectifier & AC-switches Type VDRM/ VRRM (V) [V] IRMSM [A] I(FSM) max [A] Housing Configuration Diode Bridges with Brake Chopper and NTC DDB2U50N08W1R_B23 800.0 V 50.0 A 450.0 A Easy1B Diode Bridges with MOSFET Chopper and NTC EASY Solar/UPS-High Efficiency Line 650 VCES B Type Company I = Infineon B = Common-cathode configuration Device D = Diode Series name 5 = Generation 5 Package type H = TO-220 real 2 pin W = TO-247 K = D2PAK R2L L = ThinPAK 8x8 M = DPAK DML Specifications C = Surge current stable Continuous forward current [A] G = Low thermal resistance VCE V IC* A TC = 80°C IC A TC = 25°C VCEsat V Tvj= 25°C Eon+ Eoff, mJ Tvj= 125°C IGBT HighSpeed 3 fourpack with booster and NTC Breakdown voltage 65 = 650 V 120 = 1200 V F4-50R07W2H3_B51 650 50 65 1.35 1.60 F4-75R07W2H3_B51 650 75 75 1.35 2.50 EASY Solar/UPS-High Efficiency Line 650 VCES Type IGBT Inverter VCE V IC* A TC = 80°C IGBT 3-Level VCEsat V Tvj= 25°C Eon+ Eoff, mJ Tvj= 125°C VCE V IC* A TC = 80°C VCEsat V Tvj= 25°C Eon+ Eoff, mJ Tvj= 125°C IGBT HighSpeed 3 650 V generation 5 IF [A] TO-220 R2L ϑ TO-247 Dual Die TO-247 DPAK DML D2PAK R2L ThinPAK 8x8 2 IDH02G65C5 IDK02G65C5 3 IDH03G65C5 IDK03G65C5 4 IDH04G65C5 IDK04G65C5 5 IDH05G65C5 IDK05G65C5 6 IDH06G65C5 IDK06G65C5 IDL06G65C5 8 IDH08G65C5 IDK08G65C5 IDL08G65C5 9 IDH09G65C5 IDK09G65C5 10 IDH10G65C5 IDK12G65C5 IDL12G65C5 IDH12G65C5 IDW12G65C5 IDW16G65C5 20 IDH20G65C5 IDW24G65C5B 30/32 IDW32G65C5B IDW30G65C5 40 IDW40G65C5B IDW40G65C5 1.50 1.94 650 30 1.55 1.04 FS3L50R07W2H3F_B11 650 50 1.45 2.80 650 30 1.55 1.08 FS3L50R07W2H3_B11 650 50 1.45 2.80 650 30 1.55 1.42 EASY Solar/UPS-High Efficiency Line 1200 VCES VCE V IC* A TC = 80°C IC A TC = 25°C VCEsat V Tvj= 25°C Eon+ Eoff, mJ Tvj= 125°C IGBT HighSpeed 2 DF75R12W1H4F_B11 1200 25 50 2.10 2.35 1200 20 50 1.55 1.52 1200 20 50 1.55 1.52 IGBT HighSpeed 3 DF80R12W2H3F_B11 IGBT HighSpeed 3 IDW20G65C5 24 30 Type IDL10G65C5 IDH16G65C5 IDW20G65C5B IDL04G65C5 IDK10G65C5 12 650 IDL02G65C5 IDW10G65C5 16 3ph 3-Level NPC1 with NTC FS3L30R07W2H3F_B11 Booster with NTC DF160R12W2H3F_B11 EconoPACK™ 1700 VCES 1200 V generation 5 IF [A] TO-220 R2L Type TO-247 Dual Die TO-247 DPAK DML TO220-2 R2L 2 IDM02G120C5 IDH02G120C5 5 IDM05G120C5 IDH05G120C5 IDM08G120C5 IDH08G120C5 IDM10G120C5 IDH10G120C5 8 10 IDW10G120C5B 15/16 IDW15G120C5B IDH16G120C5 20 IDW20G120C5B IDH20G120C5 30 IDW30G120C5B 40 IDW40G120C5B VCES V IC [A] VCEsat [V] Tvj= 25°C typ. Ptot [W] IGBT2 fast DPAK R2L FS100R17KS4F 1700 100 4.15 960 sixpack with NTC PrimePACK™ 1200 VCES Type VCES [V] IC [A] VCEsat [V] Tvj= 25°C typ. Eon/Eoff [mWs] Tvj=125°C typ. IGBT2 fast „B“ refers to common-cathode configuration FF600R12IS4F 1200 600 3.20 20/40 halfbridge with NTC * as specified in data sheet 12 13 History of SiC at Infineon More than 15 years of field experience Infineon is a pioneer in the commercial use of this technology. As the first company worldwide SiC based diodes were introduced in the market in 2001 already, followed by the worldwide first commercial power modules containing SiC components in 2006. Meanwhile the 5th generation of such parts is available as discrete devices. In power modules Infineon offers solutions based or empowered by SiC mainly for solar applications and selected motor drive applications . The product design was strongly oriented on a careful cost performance evaluation in order to use the new technology in systems and circuits where a tangible system advantage could be identified. › 1992 › 2006 › 2009 › 2014 Start of power device development, SiC diodes and Transistors for high power industrial applications Release of the first power modules with SiC devices inside for industrial motor drive applications (Hybrid modules) Release of first high power module with SiC Diodes Extension of the 5th generation principle towards 1200 V diodes › 1998 Start of 2” wafer technology integration in the high volume silicon power manufacturing line of Infineon › 2006 › 2001 Worldwide first release of commercial SiC power devices 14 Release of 2nd generation diodes based on Infineon’s unique MPS principle › 2007 › 2012 Move to 3” wafer production Roll out of SiC portfolio for solar power string inverters › 2008 Release of 3rd diode generation with improved thermal properties › 2010 Move to 100 mm 4” wafer diameter › 2013 Release of 5th generation of diodes, introduction of thin wafer manufacturing for SiC › 2015 Start of 150 mm conversion in manufacturing › 2014 Commercial release of Infineon’s ultra reliable SiC JFET switch in power modules and discrete versions › 2016 Technology launch of CoolSiC™ MOSFET at the PCIM in Nuremberg 15 Where to buy Infineon distribution partners and sales offices: www.infineon.com/WhereToBuy Service hotline Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. ››Germany ..................... 0800 951 951 951 (German/English) ››China, mainland ........ 4001 200 951 (Mandarin/English) ››India ........................... 000 800 4402 951 (English) ››USA ............................. 1-866 951 9519 (English/German) ››Other countries .......... 00* 800 951 951 951 (English/German) ››Direct access .............. +49 89 234-0 (interconnection fee, German/English) * Please note: Some countries may require you to dial a code other than “00” to access this international number. 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Order Number: B133-I0287-V1-7600-EU-EC-P Date: 05 / 2016 Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any lifeendangering applications, including but not limited to medical, nuclear, military, life-critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.