KSMT3612N KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS RDSON ID 100V 120MΩ 3.7A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-223 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 3.7 Continuous Drain Current-T=100℃ 20 Pulsed Drain Current2 3.0 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 3.0 TJ, TSTG Operating and Storage Junction Temperature -55 to Range +150 ID A mJ W ℃ Thermal Characteristics Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 42 RƟJA Thermal Resistance, Junction to Ambient1 12 www.kersemi.com Units ℃/W 1 KSMT3612N KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KSMT3612N KSMT3612N SOT-223 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 10 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2 2.5 4 V VDS=10V,ID=6A — 88 120 VDS=2.5V,ID=5A — 94 130 VDS=5V,ID=12A — 11 — — 632 — — 40 — — 20 — — 8.5 17 — 2 4 — 23 37 — 4.5 9 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics — 14 20 Gate-SourceCharge VGS=4.5V, VDS=20V, — 2.4 — Gate-Drain “Miller” Charge ID=6A — 3.8 — ns ns ns ns nC nC nC — 0.75 1.2 V — — — ns — — — nC td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS Notes: www.kersemi.com 2 KSMT3612N KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted www.kersemi.com 3 KSMT3612N KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET www.kersemi.com 4