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KSMU4P40
-400V P-channel MOSFET
KERSMI ELECTRONIC CO.,LTD.
Description
This P-channel MOSFET s use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
RDSON
ID
-4A
3.1 Ω
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
-400V
1)
2)
3)
4)
TO-251
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-400
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-4.0
Continuous Drain Current-T=100℃
-1.71
Pulsed Drain Current2
-10.8
EAS
Single Pulse Avalanche Energy3
260
PD
Power Dissipation4
50
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+150
℃
Ratings
Units
ID
A
mJ
W
Thermal Characteristics
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
2.5
RƟJA
Thermal Resistance, Junction to Ambient1
110
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℃/W
1
KSMU4P40
KERSMI ELECTRONIC CO.,LTD.
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMU4P40
KSMU4P40
TO-251
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-400
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-3.0
—
-5.0
V
VDS=10V,ID=6A
—
—
3.1
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
—
2.5
—
—
520
680
—
80
105
—
11
15
—
13
35
—
55
120
—
35
80
—
37
85
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
--S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
—
18
23
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
3.8
—
Gate-Drain “Miller” Charge
ID=6A
—
9.4
—
ns
ns
ns
ns
nC
nC
nC
—
—
-5.0
V
—
260
—
ns
—
1.4
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
Notes:
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KSMU4P40
KERSMI ELECTRONIC CO.,LTD.
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max .rating .The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Figure 1. On-Region Characteristics
Figure 3. Capacitance Characteristics
unless otherwise noted
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation vs.
Drain Current and Gate Voltage
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KSMU4P40
KERSMI ELECTRONIC CO.,LTD.
Figure 5. Gate Charge Characteristics
Figure 7.Breakdown Voltage Variation
vs. Temperature
Figure 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 8.Maximum Safe Operating Area
Figure 9. Transient Thermal Response Curve
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