KSMT456P KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS -30V 1) 2) 3) 4) RDSON ID 0.03Ω -7.5A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-223 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -7.5 Continuous Drain Current-T=100℃ -20 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 3 TJ, TSTG Operating and Storage Junction Temperature Range -65 to 150 ℃ Ratings Units ID A mJ W Thermal Characteristics Symbol Parameter RƟJC Thermal Resistance, Junction to Case1 42 RƟJA Thermal Resistance ,Junction to Ambient1 12 www.kersemi.com ℃/W 1 KSMT456P KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KSMT456P KSMT456P SOT-223 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -1 -1.5 -3 V VDS=10V,ID=6A — 0.0 26 0.03 VDS=2.5V,ID=5A — 0.0 35 0.054 VDS=5V,ID=12A — 13 — — 144 0 — — 905 — — 355 — — 10 20 — 65 120 — 70 130 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 70 130 Qg Total Gate Charge — 47 67 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 5 — Qgd Gate-Drain “Miller” Charge ID=6A — 12 — ns ns ns ns nC nC nC — -00. 85 -1.2 V — — 140 ns — — — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMT456P KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. Capacitance Characteristics unless otherwise noted Figure 2. On-Resistance Variation with Gate Voltage and Drain Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage www.kersemi.com 3 KSMT456P KERSMI ELECTRONIC CO.,LTD. -30V Figure 5. Gate Charge Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature P-channel MOSFET Figure 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4