KSM2304 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 30V 1) 2) 3) 4) RDSON ID 0.117Ω 2.5A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-23 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 2.5 Continuous Drain Current-T=100℃ 2.0 Pulsed Drain Current2 10 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 1.25 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM2304 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance, Junction to Case1 100 RƟJA Thermal Resistance ,Junction to Ambient1 166 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSM2304 KSM2304 SOT-23 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — — IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA — 0.77 1.2 V VDS=10V,ID=6A — 0.09 2 0.117 VDS=2.5V,ID=5A — 0.14 2 0.19 VDS=5V,ID=12A — 4.6 — — 240 — — 110 — — 17 — — 8 20 — 12 30 — 17 35 On Characteristics VGS(th) RDS(ON) GFS GATE-Source Threshold Voltage Drain-Source On Resistance² Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 8 20 Qg Total Gate Charge — 4.5 10 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 0.8 — Qgd Gate-Drain “Miller” Charge ID=6A — 1.0 — ns ns ns ns nC nC nC — — — V — — — ns — — — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM2304 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current www.kersemi.com Figure 4. Capacitance 3 KSM2304 KERSMI ELECTRONIC CO.,LTD. Figure 5. Gate Charge Figure 7.Threshold Voltage 30V N-channel MOSFET Figure 6.On-Resistance vs. Junction Temperature Figure8. Single Pulse Power Figure 9. Transient Thermal Response Curve www.kersemi.com 4