Analog Power AM3993P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature TSOP-6 Surface Mount Package Saves Board Space PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.130 @ VGS = -10V -30 0.190 @ VGS = -4.5V TSOP-6 Top View ID (A) -2.5 -1.9 S2 S1 G1 S2 1 2 6 5 D1 S1 G2 3 4 D2 G2 G1 D1 P-Channel MOSFET D2 P-Channel MOSFET o ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter VDS -30 Drain-Source Voltage V VGS ±20 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) -2.5 ID IDM -10 IS ±1.6 o TA=25 C a Power Dissipation o TA=70 C Maximum Junction-to-Ambienta t <= 10 sec Steady State A 1.15 PD W 0.7 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter A -1.9 Symbol Typ Max RthJA 93 130 110 150 o C o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 February, 2005 - Rev. A PRELIMINARY Publication Order Number: DS-AM3993_B C/W Analog Power AM3993P o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A ID(on) Drain-Source On-Resistance Forward Tranconductance A A Diode Forward Voltage Dynamic IDSS rDS(on) g fs VSD -1.00 VDS = 0 V, VGS = +/-20 V ±100 nA VDS = -24 V, VGS = 0 V -1 -10 uA VDS = -24 V, VGS = 0 V, T J = 55oC VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -2.5 A VGS = -4.5 V, ID = -1.9 A -3 A 0.130 0.190 Ω VDS = -5 V, ID = -2.5 A IS = -1.6 A, VGS = 0 V 3 -0.70 S V VDS = -5 V, VGS = -4.5 V, ID = -2.5 A 6.0 0.80 1.30 nC P-Channel VDS =-15V, VGS =0V, f=1MHz 451 130 33 pF VDD = -5 V, RL = 5 OHM, VGEN = -4.5 V, RG = 6 OHM 6.5 20 31 21 ns b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd Ciss Coss Crss t d(on) tr td(off) tf Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 February, 2005 - Rev. A PRELIMINARY Publication Order Number: DS-AM3993_B Analog Power AM3993P Typical Electrical Characteristics (P-Channel) 5 5 VGS=-10V T A = -55oC -4.5V 3 2 -3.0V 1 125oC 3 2 1 0 0 0 0.5 1 1.5 2 2.5 1.5 2 2.5 V DS - Drain-to-Source Voltage (V) 3.5 4 Transfer Characteristics 250 2.5 rDS(ON), Normalized ON-Resistance 3 V GS - Gate-to-Source Voltage (V) Output Characteristics C - Capacitance (pF) 200 2.0 -4.5V 1.5 -10V 1.0 CISS 150 100 COSS 50 CRSS 0 0.5 0 1 2 3 4 0 5 5 10 15 20 25 30 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 rDS(ON) - On-Resistance (Normalized) -10 VGS - Gate-to-Source Voltage ( V 25oC 4 ID - Drain Current (A) ID - Drain Current (A) 4 -8 -6 -4 -2 VGS = -10V 1.4 1.2 1 0.8 0.6 0 0 2 4 6 8 10 -50 12 -25 0 25 50 75 100 125 o TJ - Junction Temperature ( C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 3 February, 2005 - Rev. A PRELIMINARY Publication Order Number: DS-AM3993_B 150 Analog Power AM3993P Typical Electrical Characteristics (P-Channel) 0.4 rDS(ON) - On-Resistance (OHM) 10 IS - Source Current (A) 1 T A = 125oC 0.1 25oC 0.01 0.001 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 0.3 0.2 0.1 0 1.2 2 4 V SD, - Source-to-Drain Voltage (V) 6 8 10 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 30 2.2 ID = -250µA 20 Power (W) V GS(th) Variance (V) 2 1.8 1.6 10 1.4 0 1.2 -50 -25 0 25 50 75 100 125 0.01 150 0.1 1 Threshold Voltage Single Pulse Power D =0.5 RθJA (t) = r(t) * RθJA 0.2 0.1 Impedance Normalized Effective Transient Thermal 1 10 Time (sec) o TJ - Temperature ( C) RθJA = 125 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 February, 2005 - Rev. A PRELIMINARY Publication Order Number: DS-AM3993_B 100 Analog Power AM3993P Package Information TSOP-6: 6LEAD 5 February, 2005 - Rev. A PRELIMINARY Publication Order Number: DS-AM3993_B