AM3446N Analog Power N-Channel 20V (D

Analog Power
AM3446N
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low rDS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
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•
•
•
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.032 @ VGS = 4.5 V
20
0.044 @ VGS = 2.5V
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Low Gate Charge
Fast Switch
Miniature TSOP-6 Surface Mount Package
Saves Board Space
ID (A)
6.0
5.0
1
6
2
5
3
4
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
20
Drain-Source Voltage
VDS
V
VGS
±12
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
ID
TA=25 C
a
o
±20
IS
1.6
TA=70 C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
PD
A
2.0
W
1.3
o
TJ, Tstg -55 to 150
Symbol
t <= 5 sec
Steady-State
A
4.6
IDM
o
Power Dissipation
6.0
RTHJA
C
Maximum Units
62.5
110
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
July, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3446_E
Analog Power
AM3446N
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Min
Limits
Unit
Typ Max
Static
VGS(th)
VDS = VGS, ID = 250 uA
1.5
V
Gate-Body Leakage
Gate-Threshold Voltage
IGSS
VDS = 0 V, VGS = ±8 V
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
1
10
uA
On-State Drain Current
A
ID(on)
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
Dynamic
A
A
rDS(on)
0.7
VDS = 16 V, VGS = 0 V, T J = 55oC
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 6.0 A
VGS = 2.5 V, ID = 5.0 A
10
A
32
44
mΩ
g fs
VDS = 10 V, ID = 4.0 A
11.3
S
VSD
IS = 1.6 A, VGS = 0 V
0.75
V
b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
t d(on)
Rise Time
Turn-Off Delay Time
Fall-Time
tr
t d(off)
7.0
VDS = 10 V, VGS = 4.5 V, ID = 4.0 A
1.1
nC
2.0
8
VDD = 10 V, RL = 15 Ω, ID = 1 A,
VGEN = 4.5 V
tf
24
35
ns
10
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
July, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3446_E
Analog Power
AM3446N
Typical Electrical Characteristics (N-Channel)
30
TA = -55oC
VGS = 4.5V
3.5V
25
3.0V
ID, DRAIN CURRENT (A
ID, DRAIN CURRENT (A
30
2.5V
2.0V
20
15
10
125oC
20
15
10
5
5
0
0
0
0.5
1
1.5
2
2.5
0.5
3
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
2.5
1800
1500
2
1.5
CAPACITANCE (pF
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANC
25 oC
25
2.5V
4.5V
1
CISS
1200
900
600
COSS
300
CRSS
0.5
0
0
5
10
15
20
25
30
0
4
ID, DRAIN CURRENT (A)
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10
RDS(ON), NORMALIZED
Vgs Voltage ( V )
6
4
2
DRAIN-SOURCE ON-RESISTANC
1.6
8
1.4
1.2
1
0.8
0.6
-50
0
0
3
6
9
-25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (oC)
12
Qg, Gate Charge (nC)
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
3
July, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3446_E
150
Analog Power
AM3446N
Typical Electrical Characteristics (N-Channel)
0.07
TA = 125oC
10
RDS(ON), ON-RESISTANCE (OHM
IS, REVERSE DRAIN CURRENT (
100
1
25oC
0.1
0.01
0.001
0.06
0.05
0.04
0.03
0.02
0.01
0.0001
0
0.2
0.4
0.6
0.8
1
0
1.2
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance vs. Gate-to-Source Voltage
P(pk), PEAK TRANSIENT POWER (W)
50
ID = 250µA
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
40
30
20
10
0
0.001
0.2
150
0.01
0.1
1
10
100
t1, TIME (sec)
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Threshold Voltage
r(t), NORMALIZEDEFFECTIVETRANSIENTTHERMALRESISTAN
Vth, GATE-SOURCE THRESTHOL
VOLTAGE (V)
1.2
Figure 10. Single Pulse Power
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient
4
July, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3446_E
Analog Power
AM3446N
Package Information
TSOP-6: 6LEAD
5
July, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3446_E
Analog Power
AM3446N
Ordering information
• AM3446N-T1-XX
–
–
–
–
–
–
A:
M:
3446:
N:
T1:
XX:
Analog Power
MOSFET
Part number
N-Channel
Tape & reel
Blank:
Standard
PF:
Leadfree
6
July, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3446_E
Analog Power
AM3446N
Layout recommendation,
TSOP-6
7
July, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3446_E