ISL84762 ® Data Sheet September 15, 2008 Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog Switch The Intersil ISL84762 device is a low ON-resistance, low voltage, bidirectional, dual single-pole/double-throw (SPDT) analog switch designed to operate from a single +1.65V to +3.6V supply. Targeted applications include battery powered equipment that benefits from low rON (0.35Ω) and fast switching speeds (tON = 14ns, tOFF = 6ns). The digital logic input is 1.8V logic-compatible when using a single +3V supply. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins may be limited and digital geometries are not well suited to analog switch performance. This part may be used to “mux-in” additional functionality while reducing ASIC design risk. The ISL84762 is offered in small form factor packages, alleviating board space limitations. The ISL84762 is a committed dual single-pole/double-throw (SPDT) that consist of two normally open (NO) and two normally (NC) switches. This configuration can be used as a dual 2-to-1 multiplexer. The ISL84762 is pin compatible with the MAX4762. TABLE 1. FEATURES AT A GLANCE FN6105.1 Features • Pb-Free Available (RoHS Compliant) • Pin Compatible Replacement for the MAX4762 • ON-Resistance (rON) - V+ = +2.7V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.39Ω - V+ = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55Ω • rON Matching Between Channels . . . . . . . . . . . . . . . . 0.05Ω • rON Flatness Across Signal Range . . . . . . . . . . . . . . 0.043Ω • Single Supply Operation. . . . . . . . . . . . . . . . +1.65V to +3.6V • Low Power Consumption (PD) . . . . . . . . . . . . . . . . . <0.02µW • Fast Switching Action (V+ = +2.7V) - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6ns • ESD HBM Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >9kV • Guaranteed Break-before-Make • 1.8V Logic Compatible (+3V supply) • Available in 10 Ld 3x3 Thin DFN and 10 Ld MSOP Applications ISL84762 • Battery-powered, Handheld, and Portable Equipment - Cellular/mobile Phones - Pagers - Laptops, Notebooks, Palmtops Number of Switches 2 SW SPDT or 2-to-1 MUX 3V rON 0.35Ω 3V tON/tOFF 12ns/5ns 1.8V rON 0.55Ω 1.8V tON/tOFF 20ns/8ns Packages 10 Ld 3x3 TDFN, 10 Ld MSOP • Portable Test and Measurement • Medical Equipment • Audio and Video Switching Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” • Application Note AN557 “Recommended Test Procedures for Analog Switches” 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2004, 2008. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL84762 Pinout Ordering Information (Note 1) ISL84762 (10 LD TDFN, MSOP) TOP VIEW V+ 1 PART NUMBER 10 NO2 NO1 2 9 COM2 COM1 3 8 NC2 7 IN2 NC1 4 IN1 5 6 GND NOTE: 1. Switches Shown for Logic “0” Input. Truth Table LOGIC NC1, NC2 NO1, NO2 0 ON OFF 1 OFF ON NOTE: Logic “0” ≤0.5V. Logic “1” ≥1.4V with a 3V supply. Pin Descriptions PIN V+ FUNCTION System Power Supply Input (+1.65V to +3.6V) GND Ground Connection IN Digital Control Input COM TEMP. RANGE PART (°C) MARKING PACKAGE PKG. DWG. # ISL84762IR 762 -40 to +85 10 Ld 3x3 TDFN L10.3x3A ISL84762IR-T* 762 -40 to +85 10 Ld 3x3 TDFN L10.3x3A Tape and Reel ISL84762IU 4762 -40 to +85 10 Ld MSOP M10.118 ISL84762IU-T* 4762 -40 to +85 10 Ld MSOP Tape and Reel M10.118 ISL84762IRZ (Note) 762Z -40 to +85 10 Ld 3x3 TDFN L10.3x3A (Pb-free) ISL84762IRZ-T* 762Z (Note) -40 to +85 10 Ld 3x3 TDFN L10.3x3A Tape and Reel (Pb-free) ISL84762IUZ (Note) -40 to +85 10 Ld MSOP (Pb-free) M10.118 -40 to +85 10 Ld MSOP Tape and Reel (Pb-free) M10.118 4762Z ISL84762IUZ-T* 4762Z (Note) *Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. Analog Switch Common Pin NO Analog Switch Normally Open Pin NC Analog Switch Normally Closed Pin 2 FN6105.1 September 15, 2008 ISL84762 Absolute Maximum Ratings Thermal Information V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 4.7V Input Voltages NO, NC, IN (Note 2) . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V) Output Voltages COM (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V) Continuous Current NO, NC, or COM . . . . . . . . . . . . . . . . . ±300mA Peak Current NO, NC, or COM (Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . ±500mA ESD Rating: Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>9kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>500V Charged Device Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>1kV Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) 10 Ld 3x3 TDFN Package (Note 3) . . . 47 11 10 Ld MSOP Package (Note 4) . . . . . . 162 N/A Maximum Junction Temperature (Plastic Package). . . . . . . +150°C Maximum Storage Temperature Range . . . . . . . . . . . -65°C to +150°C Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 2. Signals on NC, NO, IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings. 3. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 4. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside. Electrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 5) Unless Otherwise Specified. PARAMETER TEST CONDITIONS TEMP MIN (°C) (Notes 6, 7) TYP MAX (Notes 6, 7) UNITS ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON-Resistance, rON V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+ (See Figure 5) rON Matching Between Channels, ΔrON V+ = 2.7V, ICOM = 100mA, VNO or VNC = Voltage at max rON (Note 10) rON Flatness, RFLAT(ON) V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+ (Note 8) NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 3.3V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V COM ON Leakage Current, ICOM(ON) V+ = 3.3V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating Full 0 - V+ V 25 - 0.39 0.6 Ω Full - - 0.6 Ω 25 - 0.05 0.2 Ω Full - - 0.2 Ω 25 - 0.043 0.1 Ω Full - - 0.15 Ω 25 -2 - 2 nA Full -40 - 40 nA 25 -3 - 3 nA Full -60 - 60 nA 25 - 14 20 ns DYNAMIC CHARACTERISTICS Turn-ON Time, tON V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF (See Figure 1, Note 9) Turn-OFF Time, tOFF V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF (See Figure 1, Note 9) Full - - 25 ns 25 - 6 12 ns Full - - 17 ns Break-Before-Make Time Delay, tD V+ = 3.3V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF (See Figure 3, Note 9) Full 2 7 - ns Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω (See Figure 2) 25 - 95 - pC OFF-Isolation RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS (See Figure 4) 25 - -68 - dB Crosstalk (Channel-to-Channel) RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS (See Figure 6) 25 - -95 - dB Total Harmonic Distortion f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600Ω 25 - 0.003 - % NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V (See Figure 7) 25 - 115 - pF 3 FN6105.1 September 15, 2008 ISL84762 Electrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 5) Unless Otherwise Specified. (Continued) PARAMETER TEST CONDITIONS COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V (See Figure 7) TEMP MIN (°C) (Notes 6, 7) TYP MAX (Notes 6, 7) UNITS 25 - 224 - pF Full 1.65 - 3.6 V 25 - - 40 nA Full - - 750 nA POWER SUPPLY CHARACTERISTICS Power Supply Range Positive Supply Current, I+ V+ = +3.6V, VIN = 0V or V+ DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL Full - - 0.5 V Input Voltage High, VINH Full 1.4 - - V Full -0.5 - 0.5 µA Input Current, IINH, IINL V+ = 3.3V, VIN = 0V or V+ (Note 9) Electrical Specifications - 1.8V Supply Test Conditions: V+ = +1.65V to +2V, GND = 0V, VINH = 1.0V, VINL = 0.4V (Note 5), Unless Otherwise Specified. PARAMETER TEST CONDITIONS TEMP MIN MAX (°C) (Notes 6, 7) TYP (Notes 6, 7) UNITS ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG Full 0 - V+ V V+ = 1.8V, ICOM = 100mA, VNO or VNC = 0V to V+ (See Figure 5, Note 9) 25 - 0.55 - Ω Full - 0.6 - Ω V+ = 1.65V, VNO or VNC = 1.0V, RL =50Ω, CL = 35pF (See Figure 1, Note 9) 25 - 22 28 ns Full - - 33 ns V+ = 1.65V, VNO or VNC = 1.0V, RL =50Ω, CL = 35pF (See Figure 1, Note 9) 25 - 9 15 ns Full - - 20 ns V+ = 2.0V, VNO or VNC = 1.0V, RL =50Ω, CL = 35pF, (See Figure 3, Note 9) Full 2 9 - ns Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω (See Figure 2) 25 - 49 - pC OFF-Isolation RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS (See Figure 4) 25 - -68 - dB Crosstalk (Channel-to-Channel) RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS (See Figure 6) 25 - -95 - dB NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V (See Figure 7) 25 - 115 - pF COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V (See Figure 7) 25 - 224 - pF Full - - 0.4 V Full 1.0 - - V Full -0.5 - 0.5 µA ON-Resistance, rON DYNAMIC CHARACTERISTICS Turn-ON Time, tON Turn-OFF Time, tOFF Break-Before-Make Time Delay, tD DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL Input Voltage High, VINH Input Current, IINH, IINL V+ = 2.0V, VIN = 0V or V+ (Note 9) NOTES: 5. VIN = input voltage to perform proper function. 6. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. 8. Flatness is defined as the difference between maximum and minimum value of ON-resistance over the specified analog signal range. 9. Limits established by characterization and are not production tested. 10. rON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON value. 4 FN6105.1 September 15, 2008 ISL84762 Test Circuits and Waveforms V+ V+ LOGIC INPUT tr < 5ns tf < 5ns 50% C 0V tOFF SWITCH INPUT VNO SWITCH INPUT COM IN VOUT 90% SWITCH OUTPUT VOUT NO OR NC 90% LOGIC INPUT CL 35pF RL 50Ω GND 0V tON Logic input waveform is inverted for switches that have the opposite logic sense. Repeat test for all switches. CL includes fixture and stray capacitance. RL V OUT = V (NO or NC) -----------------------R L + r ON FIGURE 1B. TEST CIRCUIT FIGURE 1A. MEASUREMENT POINTS FIGURE 1. SWITCHING TIMES V+ RG SWITCH OUTPUT VOUT C VOUT COM NO OR NC ΔVOUT VG GND IN CL V+ LOGIC INPUT ON ON LOGIC INPUT OFF 0V Q = ΔVOUT x CL Repeat test for all switches. FIGURE 2B. TEST CIRCUIT FIGURE 2A. MEASUREMENT POINTS FIGURE 2. CHARGE INJECTION V+ V+ NO LOGIC INPUT VNX VOUT COM NC 0V RL 50Ω IN SWITCH OUTPUT VOUT C 90% LOGIC INPUT CL 35pF GND 0V tD FIGURE 3A. MEASUREMENT POINTS Repeat test for all switches. CL includes fixture and stray capacitance. FIGURE 3B. TEST CIRCUIT FIGURE 3. BREAK-BEFORE-MAKE TIME 5 FN6105.1 September 15, 2008 ISL84762 Test Circuits and Waveforms (Continued) V+ C V+ C SIGNAL GENERATOR rON = V1/100mA NO OR NC NO OR NC IN VNX 0V OR V+ 100mA IN V1 0V OR V+ COM ANALYZER GND COM RL GND Signal direction through switch is reversed, worst case values are recorded. Repeat test for all switches. Repeat test for all switches. FIGURE 4. OFF-ISOLATION TEST CIRCUIT FIGURE 5. rON TEST CIRCUIT V+ C V+ C SIGNAL GENERATOR NO OR NC COM 50Ω NO OR NC IN1 IN 0V OR V+ 0V OR V+ IMPEDANCE ANALYZER NC OR NO COM ANALYZER COM NC GND RL Signal direction through switch is reversed, worst case values are recorded. Repeat test for all switches. FIGURE 6. CROSSTALK TEST CIRCUIT Detailed Description The ISL84762 is a bidirectional, dual single pole/double throw (SPDT) analog switch that offers precise switching capability from a single 1.65V to 3.6V supply with low ON-resistance (0.39Ω) and high speed operation (tON = 14ns, tOFF = 6ns). The device is especially well suited for portable battery powered equipment due to its low operating supply voltage (1.65V), low power consumption (2.7µW max), low leakage currents (60nA max), and the tiny, Thin DFN and MSOP packages. The ultra low ON-resistance and rON flatness provide very low insertion loss and distortion to applications that require signal reproduction. External V+ Series Resistor For improved ESD and latch-up immunity, Intersil recommends adding a 100Ω resistor in series with the V+ power supply pin of the ISL84762 IC (see Figure 8). 6 GND Repeat test for all switches. FIGURE 7. CAPACITANCE TEST CIRCUIT During an overvoltage transient event, such as occurs during system level IEC 61000 ESD testing, substrate currents can be generated in the IC that can trigger parasitic SCR structures to turn ON, creating a low impedance path from the V+ power supply to ground. This will result in a significant amount of current flow in the IC, which can potentially create a latch-up state or permanently damage the IC. The external V+ resistor limits the current during this over-stress situation and has been found to prevent latch-up or destructive damage for many overvoltage transient events. Under normal operation, the sub-microamp IDD current of the IC produces an insignificant voltage drop across the 100Ω series resistor resulting in no impact to switch operation or performance. FN6105.1 September 15, 2008 ISL84762 V+ OPTIONAL PROTECTION RESISTOR OPTIONAL SCHOTTKY DIODE C V+ 100Ω OPTIONAL PROTECTION RESISTOR NO INX COM VNX NC VCOM IN GND GND OPTIONAL SCHOTTKY DIODE FIGURE 8. V+ SERIES RESISTOR FOR ENHANCED ESD AND LATCH-UP IMMUNITY Supply Sequencing and Overvoltage Protection FIGURE 9. OVERVOLTAGE PROTECTION Power-Supply Considerations With any CMOS device, proper power supply sequencing is required to protect the device from excessive input currents which might permanently damage the IC. All I/O pins contain ESD protection diodes from the pin to V+ and to GND (see Figure 9). To prevent forward biasing these diodes, V+ must be applied before any input signals, and the input signal voltages must remain between V+ and GND. The ISL84762 construction is typical of most single supply CMOS analog switches, in that they have two supply pins: V+ and GND. V+ and GND drive the internal CMOS switches and set their analog voltage limits. Unlike switches with a 4V maximum supply voltage, the ISL84762 4.8V maximum supply voltage provides plenty of room for the 10% tolerance of 3.6V supplies, as well as room for overshoot and noise spikes. If these conditions cannot be guaranteed, then precautions must be implemented to prohibit the current and voltage at the logic pin and signal pins from exceeding the maximum ratings of the switch. The following two methods can be used to provided additional protection to limit the current in the event that the voltage at a signal pin or logic pin goes below ground or above the V+ rail. The minimum recommended supply voltage is 1.65V but the part will operate with a supply below 1.5V. It is important to note that the input signal range, switching times, and ON-resistance degrade at lower supply voltages. Refer to the “Electrical Specifications” tables beginning on page 3 and “Typical Performance Curves” beginning on page 8 for details. Logic inputs can be protected by adding a 1kΩ resistor in series with the logic input (see Figure 9). The resistor limits the input current below the threshold that produces permanent damage, and the sub-microamp input current produces an insignificant voltage drop during normal operation. V+ and GND also power the internal logic and level shiftiers. The level shiftiers convert the input logic levels to switched V+ and GND signals to drive the analog switch gate terminals. This method is not acceptable for the signal path inputs. Adding a series resistor to the switch input defeats the purpose of using a low rON switch. Connecting Schottky diodes to the signal pins as shown in Figure 9 will shunt the fault current to the supply or to ground thereby protecting the switch. These Schottky diodes must be sized to handle the expected fault current. 7 This family of switches cannot be operated with bipolar supplies, because the input switching point becomes negative in this configuration. FN6105.1 September 15, 2008 ISL84762 Logic-Level Thresholds about 68dB in 50Ω systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease off-Isolation and crosstalk rejection due to the voltage divider action of the switch OFF impedance and the load impedance. This switch family is 1.8V CMOS compatible (0.5V and 1.4V) over a supply range of 2.0V to 3.6V (see Figure 16). At 3.6V the VIH level is about 1.27V. This is still below the 1.8V CMOS guaranteed high output minimum level of 1.4V, but noise margin is reduced. Leakage Considerations The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving the digital input signals from GND to V+ with a fast transition time minimizes power dissipation. Reverse ESD protection diodes are internally connected between each analog-signal pin and both V+ and GND. One of these diodes conducts if any analog signal exceeds V+ or GND. High-Frequency Performance Virtually all the analog leakage current comes from the ESD diodes to V+ or GND. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or GND and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and GND pins constitutes the analogsignal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog signal In 50Ω systems, the signal response is reasonably flat even past 30MHz with a -3dB bandwidth of 120MHz (see Figure 17). The frequency response is very consistent over a wide V+ range, and for varying analog signal levels. An OFF switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from a switch’s input to its output. Off-Isolation is the resistance to this feedthrough, while crosstalk indicates the amount of feedthrough from one switch to another. Figure 18 details the high off-Isolation and crosstalk rejection provided by this part. At 100kHz, off-Isolation is Typical Performance Curves TA = +25°C, Unless Otherwise Specified. 0.44 0.7 V+ = 2.7V ICOM = 100mA ICOM = 100mA 0.42 0.6 +85°C 0.40 V+ = 1.8V 0.4 V+ = 3.6V V+ = 2.7V 0.3 rON (Ω) rON (Ω) 0.5 V+ = 3V 0.38 +25°C 0.36 0.34 -40°C 0.2 0.32 0.30 0.1 0 1 2 3 VCOM (V) FIGURE 10. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE 8 4 0 0.5 1.0 1.5 2.0 2.5 3.0 VCOM (V) FIGURE 11. ON-RESISTANCE vs SWITCH VOLTAGE FN6105.1 September 15, 2008 ISL84762 Typical Performance Curves TA = +25°C, Unless Otherwise Specified. (Continued) 0.65 100 V+ = 1.8V ICOM = 100mA 0.60 75 +85°C V+ = 3V 50 Q (pC) rON (Ω) 0.55 0.50 25 V+ = 1.8V 0.45 0 +25°C -40°C 0.40 -25 0.35 -50 0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCOM (V) VCOM (V) FIGURE 13. CHARGE INJECTION vs SWITCH VOLTAGE FIGURE 12. ON-RESISTANCE vs SWITCH VOLTAGE 60 14 13 12 50 40 tOFF (ns) tON (ns) 11 10 30 9 +85°C 8 -40°C 7 +85°C +25°C 6 20 -40°C 10 1.0 +25°C 5 1.5 4 2.0 2.5 3.0 V+ (V) 3.5 4.0 3 1.0 4.5 FIGURE 14. TURN-ON TIME vs SUPPLY VOLTAGE 1.5 2.0 2.5 3.0 V+ (V) 3.5 4.0 4.5 FIGURE 15. TURN-OFF TIME vs SUPPLY VOLTAGE NORMALIZED GAIN (dB) 1.5 1.4 1.3 V+ = 3V 0 GAIN -20 1.1 VINH 1.0 0 PHASE 0.9 20 0.8 40 VINL 0.7 60 0.6 80 0.5 RL = 50Ω VIN = 0.2VP-P TO 2VP-P 0.4 0.3 1.0 PHASE (°) VINH AND VINL (V) 1.2 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V+ (V) FIGURE 16. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE 9 1M 100 10M 100M FREQUENCY (Hz) 600M FIGURE 17. FREQUENCY RESPONSE FN6105.1 September 15, 2008 ISL84762 Typical Performance Curves TA = +25°C, Unless Otherwise Specified. (Continued) -10 10 -20 20 -30 30 -40 40 -50 50 -60 60 ISOLATION -70 70 -80 80 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): OFF-ISOLATION (dB) CROSSTALK (dB) V+ = 3V GND (QFN Paddle Connection: Tie to GND or Float) TRANSISTOR COUNT: 114 PROCESS: Submicron CMOS CROSSTALK -90 90 -100 100 -110 1k 10k 100k 1M 10M 110 100M 500M FREQUENCY (Hz) FIGURE 18. CROSSTALK AND OFF-ISOLATION 10 FN6105.1 September 15, 2008 ISL84762 Thin Dual Flat No-Lead Plastic Package (TDFN) L10.3x3A 2X 0.10 C A A 10 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE D MILLIMETERS 2X 0.10 C B SYMBOL MIN NOMINAL MAX NOTES A 0.70 0.75 0.80 - A1 - - 0.05 - E A3 6 INDEX AREA TOP VIEW B // A C SEATING PLANE 0.08 C b 0.20 0.25 0.30 5, 8 D 2.95 3.0 3.05 - D2 2.25 2.30 2.35 7, 8 E 2.95 3.0 3.05 - E2 1.45 1.50 1.55 7, 8 e 0.50 BSC - k 0.25 - - - L 0.25 0.30 0.35 8 A3 SIDE VIEW D2 (DATUM B) 0.10 C 0.20 REF 7 8 N 10 2 Nd 5 3 Rev. 3 3/06 D2/2 NOTES: 6 INDEX AREA 1 2 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. 2. N is the number of terminals. NX k 3. Nd refers to the number of terminals on D. (DATUM A) 4. All dimensions are in millimeters. Angles are in degrees. E2 E2/2 5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. NX L N N-1 NX b 8 e (Nd-1)Xe REF. BOTTOM VIEW 5 7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. 0.10 M C A B 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 9. Compliant to JEDEC MO-229-WEED-3 except for D2 dimensions. CL NX (b) (A1) L1 5 9 L e SECTION "C-C" C C TERMINAL TIP FOR ODD TERMINAL/SIDE 11 FN6105.1 September 15, 2008 ISL84762 Mini Small Outline Plastic Packages (MSOP) N M10.118 (JEDEC MO-187BA) 10 LEAD MINI SMALL OUTLINE PLASTIC PACKAGE E1 INCHES E -B- INDEX AREA 0.20 (0.008) 1 2 A B C TOP VIEW 4X θ 0.25 (0.010) R1 R GAUGE PLANE SEATING PLANE -CA 4X θ A2 A1 b -H- 0.10 (0.004) L SEATING PLANE C MIN MAX MIN MAX NOTES A 0.037 0.043 0.94 1.10 - A1 0.002 0.006 0.05 0.15 - A2 0.030 0.037 0.75 0.95 - b 0.007 0.011 0.18 0.27 9 c 0.004 0.008 0.09 0.20 - D 0.116 0.120 2.95 3.05 3 E1 0.116 0.120 2.95 3.05 4 0.020 BSC 0.20 (0.008) C C a SIDE VIEW CL E1 0.20 (0.008) C D - 0.187 0.199 4.75 5.05 - L 0.016 0.028 0.40 0.70 6 0.037 REF N -A- 0.50 BSC E L1 e D SYMBOL e L1 MILLIMETERS 0.95 REF 10 R 0.003 R1 θ α - 10 - 0.07 0.003 - 5o 15o 0o 6o 7 - - 0.07 - - 5o 15o - 0o 6o -B- Rev. 0 12/02 END VIEW NOTES: 1. These package dimensions are within allowable dimensions of JEDEC MO-187BA. 2. Dimensioning and tolerancing per ANSI Y14.5M-1994. 3. Dimension “D” does not include mold flash, protrusions or gate burrs and are measured at Datum Plane. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E1” does not include interlead flash or protrusions and are measured at Datum Plane. - H - Interlead flash and protrusions shall not exceed 0.15mm (0.006 inch) per side. 5. Formed leads shall be planar with respect to one another within 0.10mm (.004) at seating Plane. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimension at maximum material condition. Minimum space between protrusion and adjacent lead is 0.07mm (0.0027 inch). 10. Datums -A -H- . and - B - to be determined at Datum plane 11. Controlling dimension: MILLIMETER. Converted inch dimensions are for reference only All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 12 FN6105.1 September 15, 2008