Si2316BDS_RC

Si2316BDS_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RT1
34.4753
N/A
N/A
RT2
11.8465
N/A
N/A
RT3
43.1388
N/A
N/A
RT4
40.5394
N/A
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
Foot
CT1
4.1988 m
N/A
N/A
CT2
195.6827 u
N/A
N/A
CT3
2.2996
N/A
N/A
CT4
20.7664 m
N/A
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 68302
Revision: 19-Dec-07
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Si2316BDS_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RF1
12.0886
N/A
N/A
RF2
44.0380
N/A
N/A
RF3
31.3340
N/A
N/A
RF4
42.5394
N/A
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
Foot
CF1
154.9423 u
N/A
N/A
CF2
3.0589 m
N/A
N/A
CF3
19.6200 m
N/A
N/A
CF4
2.2954
N/A
N/A
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 68302
Revision: 19-Dec-07
Si2316BDS_RC
Vishay Siliconix
Document Number: 68302
Revision: 19-Dec-07
www.vishay.com
3