KSMT9110P KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS RDSON -100V 1.2Ω ID -1.1A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-223 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -1.1 Continuous Drain Current-T=100℃ -0.69 Pulsed Drain Current2 -8.8 EAS Single Pulse Avalanche Energy3 100 PD Power Dissipation4 3.1 TJ, TSTG Operating and Storage Junction Temperature -55 to Range +150 ID A mJ W ℃ Thermal Characteristics Symbol Parameter Ratings RƟJC Thermal Resistance, Junction to Case1 40 RƟJA Thermal Resistance ,Junction to Ambient1 60 www.kersemi.com Units ℃/W 1 KSMT9110P KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KSMT9110P KSMT9110P SOT-223 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — --100 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -2.0 — -4.0 V VDS=10V,ID=6A — — 1.2 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 0.82 — — — 200 — — 94 — — 18 — — 10 — — 27 — — 15 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time — 17 — Qg Total Gate Charge — — 8.7 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — — 2.2 Qgd Gate-Drain “Miller” Charge ID=6A — — 4.1 ns ns ns ns nC nC nC — — -5.5 V — 80 160 ns — 0.1 5 0.30 nC VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. www.kersemi.com 2 KSMT9110P KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics unless otherwise noted Fig 2. Typical Output Characteristics Fig 4.Normalized On-esisitance Vs. Temperature www.kersemi.com 3 KSMT9110P KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4 KSMT9110P KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET www.kersemi.com 5