SKiiP 2013 GB172-4DW V3 Absolute Maximum Ratings Symbol Ts = 25°C unless otherwise specified Conditions Values Unit V System SKiiP® 3 VCC 1) Operating DC link voltage 1200 Visol DC, t = 1 s, main terminals to heat sink 5600 V It(RMS) per AC terminal, Tterminal <115°C 400 A IFSM Tj = 150 °C, tp = 10 ms, sin 180° 13500 A I²t Tj = 150 °C, tp = 10 ms, diode 911 kA²s fout fundamental output frequency 1 kHz Tstg storage temperature -40 ... 85 °C IGBT 2-pack-integrated intelligent Power System VCES IC Tj = 25 °C Tj = 150 °C 1700 V Ts = 25 °C 2102 A Ts = 70 °C 1617 A ICnom SKiiP 2013 GB172-4DW V3 Tj Features IF • • • • • • • Typical Applications* • • • • Renewable energies Traction Elevators Industrial drives 1) With assembly of suitable MKP capacitor per terminal Tj = 25 °C A °C Tj = 150 °C 1700 V Ts = 25 °C 1758 A Ts = 70 °C 1338 A IFnom Tj junction temperature 1650 A -40 ... 150 °C V Driver Vs power supply 13 ... 30 ViH input signal voltage (high) 15 + 0.3 V VisolPD QPD <= 10pC, PRIM to POWER 1500 V dv/dt secondary to primary side 75 kV/µs fsw switching frequency 7 kHz Characteristics Symbol Footnotes 2000 -40 ... 150 Diode VRRM SKiiP technology inside Trench IGBTs CAL diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink UL recognized File no. E63532 junction temperature Ts = 25°C unless otherwise specified Conditions min. typ. max. Unit Tj = 25 °C 1.9 2.4 V Tj = 125 °C 2.2 Tj = 25 °C 1.00 1.20 V Tj = 125 °C 0.90 1.10 V Tj = 25 °C 0.75 0.95 mΩ Tj = 125 °C 1.1 1.3 mΩ VCC = 900 V 780 mJ VCC = 1200 V 1150 mJ IGBT VCE(sat) IC = 1200 A at terminal VCE0 rCE Eon + Eoff at terminal IC = 1200 A Tj = 125 °C V Rth(j-s) per IGBT switch 0.015 K/W Rth(j-r) per IGBT switch 0.0175 K/W S43 © by SEMIKRON Rev. 4 – 15.05.2014 1 SKiiP 2013 GB172-4DW V3 Characteristics Symbol Ts = 25°C unless otherwise specified Conditions min. typ. max. Unit Tj = 25 °C 2.00 2.15 V Tj = 125 °C 1.80 Tj = 25 °C 1.1 1.2 V Tj = 125 °C 0.8 0.9 V Tj = 25 °C 0.74 0.8 mΩ Tj = 125 °C 0.8 0.9 mΩ VR = 900 V 144 mJ VR = 1200 V 171 mJ Diode VF = VEC IF = 1200 A at terminal VF0 rF SKiiP® 3 Err 2-pack-integrated intelligent Power System SKiiP 2013 GB172-4DW V3 Features • • • • • • • SKiiP technology inside Trench IGBTs CAL diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink UL recognized File no. E63532 Typical Applications* • • • • Renewable energies Traction Elevators Industrial drives at terminal IF = 1200 A Tj = 125 °C V Rth(j-s) per diode switch 0.029 K/W Rth(j-r) per diode switch 0.045 K/W Driver Vs supply voltage non stabilized IS0 bias current @Vs=24V, fsw = 0, IAC = 0 Is k1 = 55 mA/kHz, k2 = 0.00035 mA/A2 VIT+ input threshold voltage (HIGH) VIT- input threshold voltage (LOW) RIN input resistance CIN input capacitance tpRESET error memory reset time tTD top / bottom switch interlock time tjitter jitter clock time tSIS short pulse suppression time ITRIPSC over current trip level 2450 Ttrip over temperature trip level 110 VDCtrip over voltage trip level, input-output turn-on VCC = 1200 V propagation time IC = 1200 A input-output Tj = 25 °C turn-off propagation time td(on)IO Footnotes td(off)IO 1) With assembly of suitable MKP capacitor per terminal System 13 24 30 330 = 330 V mA + k1* fsw + k2 * IAC2 12.3 mA V 4.6 10 V kΩ 1 nF 0.0122 ms 3 µs 125 ns 0.625 0.7 µs 2500 2550 APEAK 115 120 °C not impl. V 1.4 µs 1.4 µs RCC'+EE' flow rate=8l/min, TFluid=50°C, water/ glycol ratio 50%:50% terminals to chip, Ts = 25 °C LCE commutation inductance CCHC per phase, AC-side ICES + IRD VGE = 0 V, VCE = 1700 V, Tj = 25 °C Mdc DC terminals, SI Units 6 Mac AC terminals, SI Units 13 w SKiiP System w/o heat sink 3.1 kg wh heat sink 6.2 kg Rth(r-a) 0.0092 K/W 0.13 mΩ 3 nH 6.8 nF 4.8 mA 8 Nm 15 Nm S43 2 Rev. 4 – 15.05.2014 © by SEMIKRON SKiiP 2013 GB172-4DW V3 © by SEMIKRON Rev. 4 – 15.05.2014 3 SKiiP 2013 GB172-4DW V3 Fig. 1: Typical IGBT output characteristic Fig. 2: Typical diode output characteristics Fig. 3: Typical energy losses E = f(Ic, Vcc) Fig. 4: Typical energy losses E = f(Ic, Vcc) Fig. 5: Pressure drop Δp versus flow rate V Fig. 6: Transient thermal impedance Zth(j-r) 4 Rev. 4 – 15.05.2014 © by SEMIKRON SKiiP 2013 GB172-4DW V3 Fig. 7: Transient thermal impedance Zth(r-a) Fig. 8: Coefficients of thermal impedances Fig. 9: Thermal resistance Rth(r-a) versus flow rate V © by SEMIKRON Rev. 4 – 15.05.2014 5 SKiiP 2013 GB172-4DW V3 Heat sink 6 Rev. 4 – 15.05.2014 © by SEMIKRON SKiiP 2013 GB172-4DW V3 System This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 4 – 15.05.2014 7