SKiiP 2414 GB12E4-4DUSL Absolute Maximum Ratings Symbol Conditions Values Unit V System SKiiP® 4 2-pack-integrated intelligent Power System VCC 1) Operating DC link voltage 1030 Visol DC, t = 1 s, each polarity 4300 V It(RMS) per AC terminal, rms, sinusoidal current 500 A Imax (peak) max. peak current of power section 3600 A IFSM Tj = 175 °C, tp = 10 ms, sin 180° 15885 A I²t Tj = 175 °C, tp = 10 ms, diode 1262 kA²s fout fundamental output frequency (sinusoidal) 1 kHz Tstg storage temperature -40 ... 85 °C IGBT VCES IC SKiiP 2414 GB12E4-4DUSL Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 3109 A Ts = 70 °C 2528 A ICnom Tj 2) junction temperature 2400 A -40 ... 175 °C Diode Features • Intelligent Power Module • Integrated current and DC-link measurement with solar function • Integrated temperature measurement • Solder free power section • IGBT4 and CAL4F technology • Tjmax = 175°C • Safety isolated switching and sensor signals • Digital signal transmission • CAN Interface • 100% tested IPM • RoHS compliant • UL file no. E242581 Typical Applications* Solar energy VRRM IF Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 2369 A Ts = 70 °C 1878 A 2400 A -40 ... 175 °C 19.2 ... 28.8 V IFnom Tj 2) junction temperature Driver Vs power supply ViH input signal voltage (high) Vs + 0.3 V dv/dt secondary to primary side 75 kV/µs fsw switching frequency 10 kHz Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 2.01 2.26 V IGBT VCE(sat) Remarks For further information please refer to SKiiP®4 Technical Explanation VCE0 Footnote rCE 1) With assembly of suitable MKP capacitor per terminal 2) The specified maximum operation junction temperature Tvjop is 150°C Eon + Eoff IC = 2400 A at terminal at terminal IC = 2400 A Tj = 150 °C Tj = 150 °C 2.49 2.69 V Tj = 25 °C 0.80 0.90 V Tj = 150 °C 0.70 0.80 V Tj = 25 °C 0.51 0.57 mΩ 0.79 mΩ Tj = 150 °C 0.75 VCC = 600 V 936 mJ VCC = 900 V 1680 mJ Rth(j-s) per IGBT switch 0.0159 K/W Rth(j-r) per IGBT switch 0.0092 K/W S44 © by SEMIKRON Rev. 1.0 – 29.06.2015 1 SKiiP 2414 GB12E4-4DUSL Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 2.33 2.65 V Tj = 150 °C 2.35 2.66 V Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 25 °C 0.43 0.48 mΩ Tj = 150 °C 0.61 0.65 mΩ VR = 600 V 159 mJ VR = 900 V 200 mJ Diode VF = VEC IF = 2400 A at terminal VF0 rF SKiiP® 4 Err 2-pack-integrated intelligent Power System SKiiP 2414 GB12E4-4DUSL • Intelligent Power Module • Integrated current and DC-link measurement with solar function • Integrated temperature measurement • Solder free power section • IGBT4 and CAL4F technology • Tjmax = 175°C • Safety isolated switching and sensor signals • Digital signal transmission • CAN Interface • 100% tested IPM • RoHS compliant • UL file no. E242581 Typical Applications* Solar energy Remarks For further information please refer to SKiiP®4 Technical Explanation Footnote 1) With assembly of suitable MKP capacitor per terminal 2) The specified maximum operation junction temperature Tvjop is 150°C IF = 2400 A Tj = 150 °C Rth(j-s) per diode switch 0.0281 K/W Rth(j-r) per diode switch 0.02 K/W Driver Vs supply voltage non stabilized IS0 VIT+ bias current @Vs= 24V, fsw = 0, IAC = 0 k1 = 33 mA/kHz, k2 = 0.258 mA/A, fout =50Hz, sinusoidal current input threshold voltage (HIGH) VIT- input threshold voltage (LOW) RIN input resistance CIN input capacitance tpRESET error memory reset time Is Features at terminal 19.2 24 28.8 360 = 360 V mA + k1* fsw + k2 * IAC 0,7*Vs mA V 0,3*Vs 13 V kΩ 1 nF 1300 2900 tpReset(OCP) Over current reset time ms µs tTD top / bottom switch interlock time tjitter jitter clock time 52 tSIS short pulse suppression time 0.6 µs tPOR Power-On-Reset completed 3.5 s Idigiout digital output sink current (HALT-signal) Vit+ HALT input threshold voltage HIGH HALT (Low -->High) Vit-HALT input threshold voltage LOW HALT (High --> Low) td(err) Error delay time (from detection to HALT), (depends on kind of error) ITRIPSC over current trip level ILL threshold current value (solar function) 360 Ttrip over temperature trip level TDriverTrip 3 µs 58 16 0,6*Vs ns mA V 0.4*Vs V 170 µs 3600 3675 APEAK 128 135 142 °C over temperature PCB trip level 113 120 124 °C VDCtrip over voltage trip level, can be deactivated via CAN interface, ILoad > ILL 910 930 950 V VDCtripLL over voltage trip level, ILoad < ILL 1005 1030 1055 V 1.8 3525 APEAK S44 2 Rev. 1.0 – 29.06.2015 © by SEMIKRON SKiiP 2414 GB12E4-4DUSL Characteristics Symbol Conditions System µs 9 kV/µs IC = 2400 A 3 kV/µs 3 kV/µs RCC'+EE' IC = 2400 A flow rate = 550 m³/h, Ta=25°C, 500m above sea level terminals to chip, Ts = 25 °C LCE commutation inductance CCHC coupling capacitance secondary to heat sink Cps coupling capacitance primary to secondary ICES + IRD VGE = 0 V, VCE = 1200 V, Tj = 25 °C Mdc DC terminals 6 Mac AC terminals 13 w SKiiP System w/o heat sink 3.22 kg wh heat sink 7.55 kg dVCE/dtoff SKiiP 2414 GB12E4-4DUSL Features • Intelligent Power Module • Integrated current and DC-link measurement with solar function • Integrated temperature measurement • Solder free power section • IGBT4 and CAL4F technology • Tjmax = 175°C • Safety isolated switching and sensor signals • Digital signal transmission • CAN Interface • 100% tested IPM • RoHS compliant • UL file no. E242581 Unit 3.8 dVCE/dton 2-pack-integrated intelligent Power System max. µs td(off)IO SKiiP 4 turn on propagation delay time turn off propagation delay time IC = 0 A typ. 2.8 td(on)IO ® min. Rth(s-a) VCC = 600 V IC = 2400 A Tj = 25 °C Tj = 25 °C VCC = 600 V 0.0225 K/W 0.0675 mΩ 4.5 nH 6 nF 0.08 nF 0.209 mA 8 Nm 15 Nm Typical Applications* Solar energy Remarks For further information please refer to SKiiP®4 Technical Explanation Footnote 1) With assembly of suitable MKP capacitor per terminal 2) The specified maximum operation junction temperature Tvjop is 150°C S44 © by SEMIKRON Rev. 1.0 – 29.06.2015 3 SKiiP 2414 GB12E4-4DUSL 4 Rev. 1.0 – 29.06.2015 © by SEMIKRON SKiiP 2414 GB12E4-4DUSL Fig. 1: Typical IGBT output characteristics Fig. 2: Typical diode output characteristics Fig. 3: Typical switching energy E = f(Ic) Fig. 4: Typical switching energy E = f(Ic) Fig. 5: Transient thermal impedance Zth(j-s) Fig. 6: Transient thermal impedance Zth(j-r) © by SEMIKRON Rev. 1.0 – 29.06.2015 5 SKiiP 2414 GB12E4-4DUSL Fig. 7: Transient thermal impedance Zth(s-a) Fig. 8: Coefficients of thermal impedances Fig. 9: Thermal resistance Rth(s-a) versus flow rate V Fig. 10: Pressure drop Δp versus flow rate V 6 Rev. 1.0 – 29.06.2015 © by SEMIKRON SKiiP 2414 GB12E4-4DUSL System This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1.0 – 29.06.2015 7