SK 25 GH 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP® 3 IGBT module SK 25 GH 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V • Compact design • One screw mounting • Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) • High short circuit capability • Trench4 IGBT technology • CAL4F diode technology • VCE,sat with positive coefficient Typical Applications* • Inverter • Motor drive V 35 A 29 A 25 A 75 A -20 ... 20 V 10 µs -40 ... 175 °C Ts = 25 °C 28 A Ts = 70 °C 22 A 25 A Tj = 150 °C Inverse - Diode IF Tj = 175 °C IFnom Features 1200 IFRM IFRM = 3 x IFnom 75 A IFSM 10 ms, sin 180°, Tj = 150 °C 100 A -40 ... 175 °C -40 ... 125 °C 2500 V Tj Module It(RMS) , A Tstg Visol AC, sinusoidal, t = 1 min Characteristics Symbol Conditions Inverter - IGBT IC = 25 A VCE(sat) VGE = 15 V chiplevel VCE0 chiplevel min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 42.0 48.0 m 62.0 66.0 m 5.8 6.5 V rCE VGE = 15 V VGE(th) VGE = VCE, IC = 0.85 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG - 8 V...+ 15 V RGint Tj = 25 °C td(on) Eoff VCC = 600 V IC = 25 A RG on = 19 RG off = 19 di/dton = 2825 A/µs di/dtoff = 2825 A/µs VGE = +15/-7 V Rth(j-s) per IGBT tr Eon td(off) tf Tj = 150 °C 5 Tj = 25 °C mA mA f = 1 MHz 1.43 nF f = 1 MHz 0.115 nF f = 1 MHz 0.085 nF 142 nC 0.00 Tj = 150 °C 22 ns Tj = 150 °C 19.5 ns Tj = 150 °C 2.27 mJ Tj = 150 °C 288 ns Tj = 150 °C 77.5 ns Tj = 150 °C 2.7 mJ 1.31 K/W GH © by SEMIKRON Rev. 0 – 14.06.2012 1 SK 25 GH 12T4 Characteristics Symbol Conditions Inverse - Diode VF = VEC IF = 25 A VF0 chiplevel rF SEMITOP® 3 IGBT module SK 25 GH 12T4 IRRM Qrr Err Rth(j-s) min. Tj = 25 °C Tj = 150 °C Tj = 25 °C 1.1 typ. max. Unit 2.41 2.74 V 2.45 2.79 V 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 36.0 44.4 49.6 m 62.0 67.6 m Tj = 150 °C IF = 25 A Tj = 150 °C di/dtoff = 2825 A/µs T = 150 °C j VGE = -7 V T j = 150 °C VCC = 600 V per diode 31.5 A 1.15 µC 1.28 mJ 1.91 K/W Module Ms Mounting torque w 2.3 2.5 29 Nm g Temperatur Sensor Features • Compact design • One screw mounting • Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) • High short circuit capability • Trench4 IGBT technology • CAL4F diode technology • VCE,sat with positive coefficient R100 R(T) ,, Typical Applications* • Inverter • Motor drive GH 2 Rev. 0 – 14.06.2012 © by SEMIKRON SK 25 GH 12T4 Fig. 1: Typical IGBT output characteristic Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 6: Typ. gate charge characteristic Fig. 7: Typ. switching times vs. IC © by SEMIKRON Rev. 0 – 14.06.2012 3 SK 25 GH 12T4 Fig. 8: Typ. switching times vs. gate resistor RG 4 Fig. 10: CAL diode forward characteristic Rev. 0 – 14.06.2012 © by SEMIKRON SK 25 GH 12T4 GH This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 14.06.2012 5