PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation 1.3 Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to-DC converter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Min Typ Max Unit VCEO collector-emitter voltage Conditions - - 100 V IC collector current (DC) - - 1 A ICM peak collector current - - 3 A RCEsat equivalent on-resistance - - 200 mΩ PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Discrete pinning Pin Description 1, 2, 5, 6 collector 3 base 4 emitter Simplified outline 6 5 Symbol 1, 2, 5, 6 4 3 4 1 2 3 sym014 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS8110Y - plastic surface mounted package; 6 leads SOT363 4. Marking Table 4. Marking Type number Marking code[1] PPBSS8110Y 81* [1] * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 120 V VCEO collector-emitter voltage open base - 100 V VEBO emitter-base voltage open collector - 5 V ICM peak collector current Tj(max) - 3 A IC continuous collector current - 1 A IB continuous base current Ptot total power dissipation Tamb ≤ 25 °C PBSS8110Y_2 Product data sheet - 0.3 A [1] - 290 mW [2] - 480 mW [3] - 625 mW © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 2 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature +150 °C [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting pad. [3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting pad. 001aaa796 600 Ptot (mW) (1) 400 (2) 200 0 0 40 80 120 160 Tamb (°C) (1) 1cm2 collector mounting pad (2) Standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-s) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to soldering point Conditions in free air in free air Unit 431 K/W [2] 260 K/W [3] 200 K/W [1] 85 K/W [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting pad. [3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting pad. PBSS8110Y_2 Product data sheet Typ [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 3 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa798 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 PCB; standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 2. Transient thermal impedance as a function of pulse time; typical values PBSS8110Y_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 4 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa797 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Mounted on FR4 PCB; mounting pad for collector = 1cm2 (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 3. Transient thermal impedance as a function of pulse time; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 80 V; IE = 0 A - - 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 μA ICES collector-emitter cut-off current VCE = 80 V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 10 V; IC = 1 mA 150 - - VCE = 10 V; IC = 250 mA 150 - 500 VCE = 10 V; IC = 0.5 A [1] 100 - - VCE = 10 V; IC = 1 A [1] 80 - - PBSS8110Y_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 5 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA - - 40 mV IC = 500 mA; IB = 50 mA - - 120 mV IC = 1 A; IB = 100 mA - - 200 mV - 160 200 mΩ [1] RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA - - 1.05 V VBEon base-emitter turn-on voltage VCE = 10 V; IC = 1 A - - 0.9 V fT transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz - - 7.5 pF [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 001aaa497 600 001aaa495 1000 VBE (mV) hFE (1) 800 (1) 400 (2) (2) 600 (3) 200 (3) 400 0 10−1 1 10 102 103 104 IC (mA) 200 10−1 VCE = 10 V 1 (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C DC current gain as a function of collector current; typical values Fig 5. 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values PBSS8110Y_2 Product data sheet 102 VCE = 10 V (2) Tamb = 25 °C Fig 4. 10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 6 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa504 1 001aaa505 103 VCEsat (V) VCEsat (mV) 10−1 102 (1) (2) (3) 10−2 10−1 1 10 102 10 10−1 103 104 IC (mA) 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa506 104 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa498 1200 VBEsat (mV) VCEsat (mV) 1000 (1) 103 800 (2) (3) 600 102 400 10 10−1 1 10 102 103 104 IC (mA) 200 10−1 IC/IB = 50; Tamb = 25 °C 1 10 102 103 104 IC (mA) IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values Fig 9. Base-emitter saturation voltage as a function of collector current; typical values PBSS8110Y_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 7 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa499 1200 VBEsat (mV) 001aaa500 1000 VBEsat (mV) 1000 800 800 600 600 400 10−1 1 102 10 103 104 IC (mA) 400 10−1 IC/IB = 20; Tamb = 25 °C 001aaa496 2 IB (mA) = 35 31.5 28 24.5 21 17.5 14 1.6 1.2 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C Fig 10. Base-emitter saturation voltage as a function of collector current; typical values IC (A) 1 Fig 11. Base-emitter saturation voltage as a function of collector current; typical values 001aaa501 103 RCEsat (Ω) 102 10.5 10 7 0.8 3.5 1 0.4 0 0 1 2 3 4 5 10−1 10−1 (1) (2) (3) 1 VCE (V) Tamb = 25 °C 10 102 103 104 IC (mA) IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 12. Collector current as a function of collector-emitter voltage; typical values Fig 13. Equivalent on-resistance as a function of collector current; typical values PBSS8110Y_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 8 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa502 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C 001aaa503 103 10−1 10−1 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C Fig 14. Equivalent on-resistance as a function of collector current; typical values Fig 15. Equivalent on-resistance as a function of collector current; typical values PBSS8110Y_2 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 9 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 16. Package outline PBSS8110Y_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 10 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS8110Y_2 20091121 Product data - PBSS8110Y_1 Modifications: PBSS8110Y_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • • Table 2 “Discrete pinning”: amended • Figure 12 “Collector current as a function of collector-emitter voltage; typical values”: updated • Figure 16 “Package outline”: updated Figure 4 “DC current gain as a function of collector current; typical values”: updated Figure 6 “Collector-emitter saturation voltage as a function of collector current; typical values”: VCEsat unit amended from mV to V 20040602 Product data - PBSS8110Y_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 11 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS8110Y_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 November 2009 12 of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 November 2009 Document identifier: PBSS8110Y_2