83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB. 1.2 Features and benefits Leadless ultra small SMD plastic package High efficiency due to less heat generation Low package height of 0.37 mm AEC-Q101 qualified Low collector-emitter saturation voltage VCEsat Reduced Printed-Circuit Board (PCB) requirements High collector current capability IC and ICM 1.3 Applications DC-to-DC conversion LCD backlighting Supply line switching Driver in low supply voltage applications (e.g. lamps and LEDs) Battery charger 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -15 V IC collector current - - -500 mA ICM peak collector current single pulse; tp ≤ 1 ms - - -1 A RCEsat collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 500 mΩ PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base 2 E emitter 1 3 C collector 2 Graphic symbol 3 3 1 Transparent top view SOT883B 2 sym013 3. Ordering information Table 3. Ordering information Type number Package PBSS3515MB Name Description Version - Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS3515MB 0001 0011 [1] For SOT883B binary marking code description see Figure 1 4.1 Binary marking code description PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. PBSS3515MB Product data sheet SOT883B binary marking code decription All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 2 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -15 V VCEO collector-emitter voltage open base - -15 V open collector - -6 V - -500 mA - -1 A VEBO emitter-base voltage IC collector current ICM peak collector current single pulse; tp ≤ 1 ms IBM peak base current single pulse; tp ≤ 1 ms total power dissipation Tamb ≤ 25 °C Ptot - -100 mA [1][2] - 250 mW [3][2] - 590 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. PBSS3515MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 3 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1][2] - - 500 K/W [3][2] - - 212 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommented soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 006aab603 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac985 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0 1 10-5 0.01 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS3515MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 4 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -15 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -15 V; IE = 0 A; Tj = 150 °C - - -50 µA nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 hFE DC current gain VCE = -2 V; IC = -10 mA; Tamb = 25 °C 200 - - VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 150 - - VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 90 - - IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C - - -25 mV IC = -200 mA; IB = -10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -150 mV IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -250 mV VCEsat collector-emitter saturation voltage RCEsat collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 500 mΩ VBEsat base-emitter saturation IC = -500 mA; IB = -50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -1.1 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -0.9 V fT transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C 100 280 - MHz Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 10 pF PBSS3515MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 5 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor mld665 600 hFE mld667 −1200 VBE (mV) (1) −1000 (1) 400 −800 (2) (2) −600 200 (3) (3) −400 0 −10−1 Fig 4. −1 −10 −102 IC (mA) -103 −200 −10−1 −1 VCE = -2 V VCE = -2 V (1) Tamb = 150 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C DC current gain as a function of collector current; typical values mld669 −103 Fig 5. −10 −102 −103 Base-emitter voltage as a function of collector current; typical values mld668 −1200 VBEsat (mV) VCEsat (mV) IC (mA) −1000 (1) −102 (2) −800 (1) −600 (3) −10 (2) (3) −400 −1 −10−1 −1 −10 −102 IC (mA) −103 −200 −10−1 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = -55 °C Collector-emitter saturation voltage as a function of collector current; typical values PBSS3515MB Product data sheet −10 −102 IC (mA) −103 IC/IB = 20 IC/IB = 20 Fig 6. −1 Fig 7. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 6 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 006aac992 -1.2 IC (A) IB (mA) = -7.0 -5.6 -0.8 mld670 103 RCEsat (Ω) -6.3 102 -4.9 -4.2 -3.5 -2.8 10 -2.1 -0.4 -1.4 1 (1) -0.7 (2) 0 0 -2 -4 -6 -8 -10 VCE (V) 10-1 -10-1 -1 -10 (3) -102 IC (mA) -103 IC/IB = 20 Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig 8. Collector current as a function of collector-emitter voltage; typical values Fig 9. Collector-emitter equivalent on-resistance as a function of collector current; typical values 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS3515MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 7 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 9. Package outline 0.65 0.55 0.40 0.34 0.35 1 2 0.20 0.12 0.04 max 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 10. Package outline SOT883B 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 11. Reflow soldering footprint for SOT883B PBSS3515MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 8 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS3515MB v.1 20120306 Product data sheet - - PBSS3515MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 9 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 10 of 12 PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .7 Quality information . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 March 2012 Document identifier: PBSS3515MB