Analog Power AM4562C N & P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 60 -60 Typical Applications: • DC/DC Conversion Circuits • Motor Drives PRODUCT SUMMARY rDS(on) (mΩ) 27 @ VGS = 10V 33 @ VGS = 4.5V 40 @ VGS = -10V 50 @ VGS = -4.5V SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 60 -60 VGS Gate-Source Voltage ±20 ±20 TA=25°C 7.5 -4.2 ID Continuous Drain Current a TA=70°C 5.9 -3.3 b IDM Pulsed Drain Current 20 -20 a I 2.8 -2.5 Continuous Source Current (Diode Conduction) S T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a ID (A) 7.2 6.5 5.9 5.3 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4562C_1A Analog Power AM4562C Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Symbol Test Conditions Static VDS = VGS, ID = 250 uA VGS(th) VDS = VGS, ID = -250 uA IGSS VDS = 0 V, VGS = ±20 V VDS = 48 V, VGS = 0 V IDSS VDS = -48 V, VGS = 0 V VDS = 5 V, VGS = 10 V ID(on) VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 4.8 A VGS = 4.5 V, ID = 3.8 A rDS(on) VGS = -10 V, ID = -2.6 A VGS = -4.5 V, ID = -2.1 A VDS = 15 V, ID = 6 A gfs VDS = -15 V, ID = -3.3 A IS = 1.4 A, VGS = 0 V VSD IS = -1.25 A, VGS = 0 V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min (Nch) (Pch) (Nch) (Pch) (Nch) (Pch) (Nch) (Nch) (Pch) (Pch) (Nch) (Pch) (Nch) (Pch) Dynamic b N - Channel VDS = 30 V, VGS = 4.5 V, ID = 6 A N - Channel VDS = 30 V, RL = 5 Ω, ID = 6 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz P - Channel VDS = -30 V, VGS = -4.5 V, ID = -3.3 A P - Channel VDS = -30 V, RL = 9.1 Ω, ID = -3.3 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz 2 Typ Max 1 -1 ±100 1 -1 9.5 -8 Unit V V nA uA A A 27 33 40 50 6 4 0.74 -0.79 8.9 2.5 3.7 5 6 31 9 1422 84 79 18 7.5 5.6 12 9 69 25 2057 151 92 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AM4562C_1A Analog Power AM4562C Typical Electrical Characteristics - N-channel 0.1 20 0.08 3V ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.06 3.5V 0.04 15 10 5 0.02 4V,4.5V,6V,8V,10V 0 0 0 2 4 6 8 ID-Drain Current (A) 0 10 1 3 4 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 100 0.3 TJ = 25°C ID = 6A 0.25 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.2 0.15 0.1 10 1 0.1 0.05 0 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 10 2000 F = 1MHz 10V,8V,6V,4.5V,4V Ciss 8 1500 Capacitance (pf) ID - Drain Current (A) 1.4 VSD - Source-to-Drain Voltage (V) 3.5V 6 4 3V 1000 500 2 Coss 0 Crss 0 0 0.1 0.2 0.3 0.4 0.5 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM4562C_1A Analog Power AM4562C Typical Electrical Characteristics - N-channel 2.5 VDS = 30V ID = 6A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 2 1.5 1 0.5 0 5 10 15 20 -50 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 60 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 DC 1 Idm limit 50 40 30 20 10 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 110 °C /W 0.1 0.05 0.02 0.01 P(pk) Single Pulse t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM4562C_1A Analog Power AM4562C 0.1 5 0.08 4 TJ = 25°C ID - Drain Current (A) RDS(on) - On-Resistance(Ω) Typical Electrical Characteristics - P-channel 3.5V 0.06 4V 0.04 4.5V,6V,8V,10V 3 2 1 0.02 0 0 0 1 2 3 4 ID-Drain Current (A) 0 5 1 1. On-Resistance vs. Drain Current 3 4 5 2. Transfer Characteristics 10 0.3 TJ = 25°C ID = -3.3A 0.25 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 0.2 0.15 0.1 1 0.1 0.05 0 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 3000 5 F = 1MHz 10V,8V,6V,4.5 4 2500 Ciss 4V Capacitance (pf) ID - Drain Current (A) 0.2 3.5V 3 2 1 2000 1500 1000 500 0 Coss Crss 0 0 0.1 0.2 0.3 0 5 10 15 20 1000 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 6. Capacitance 5 Publication Order Number: DS_AM4562C_1A Analog Power AM4562C Typical Electrical Characteristics - P-channel 2 VDS = -30V ID = -3.3A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0.5 0 0 10 20 30 -50 40 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 60 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 DC 1 Idm limit Limited by RDS 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA 0.1 RθJA = 110 °C /W 0.05 0.02 0.01 P(pk) t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM4562C_1A Analog Power AM4562C Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4562C_1A