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Analog Power
AM4562C
N & P-Channel 60-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
VDS (V)
60
-60
Typical Applications:
• DC/DC Conversion Circuits
• Motor Drives
PRODUCT SUMMARY
rDS(on) (mΩ)
27 @ VGS = 10V
33 @ VGS = 4.5V
40 @ VGS = -10V
50 @ VGS = -4.5V
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
60
-60
VGS
Gate-Source Voltage
±20
±20
TA=25°C
7.5
-4.2
ID
Continuous Drain Current a
TA=70°C
5.9
-3.3
b
IDM
Pulsed Drain Current
20
-20
a
I
2.8
-2.5
Continuous Source Current (Diode Conduction)
S
T
=25°C
2.1
2.1
A
PD
Power Dissipation a
TA=70°C
1.3
1.3
TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
Maximum Junction-to-Ambient a
ID (A)
7.2
6.5
5.9
5.3
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
62.5
RθJA
110
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4562C_1A
Analog Power
AM4562C
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Symbol Test Conditions
Static
VDS = VGS, ID = 250 uA
VGS(th)
VDS = VGS, ID = -250 uA
IGSS
VDS = 0 V, VGS = ±20 V
VDS = 48 V, VGS = 0 V
IDSS
VDS = -48 V, VGS = 0 V
VDS = 5 V, VGS = 10 V
ID(on)
VDS = -5 V, VGS = -10 V
VGS = 10 V, ID = 4.8 A
VGS = 4.5 V, ID = 3.8 A
rDS(on)
VGS = -10 V, ID = -2.6 A
VGS = -4.5 V, ID = -2.1 A
VDS = 15 V, ID = 6 A
gfs
VDS = -15 V, ID = -3.3 A
IS = 1.4 A, VGS = 0 V
VSD
IS = -1.25 A, VGS = 0 V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min
(Nch)
(Pch)
(Nch)
(Pch)
(Nch)
(Pch)
(Nch)
(Nch)
(Pch)
(Pch)
(Nch)
(Pch)
(Nch)
(Pch)
Dynamic b
N - Channel
VDS = 30 V, VGS = 4.5 V,
ID = 6 A
N - Channel
VDS = 30 V, RL = 5 Ω,
ID = 6 A,
VGEN = 10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 Mhz
P - Channel
VDS = -30 V, VGS = -4.5 V,
ID = -3.3 A
P - Channel
VDS = -30 V, RL = 9.1 Ω,
ID = -3.3 A,
VGEN = -10 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 Mhz
2
Typ
Max
1
-1
±100
1
-1
9.5
-8
Unit
V
V
nA
uA
A
A
27
33
40
50
6
4
0.74
-0.79
8.9
2.5
3.7
5
6
31
9
1422
84
79
18
7.5
5.6
12
9
69
25
2057
151
92
mΩ
mΩ
S
S
V
V
nC
ns
pF
nC
ns
pF
Publication Order Number:
DS_AM4562C_1A
Analog Power
AM4562C
Typical Electrical Characteristics - N-channel
0.1
20
0.08
3V
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
0.06
3.5V
0.04
15
10
5
0.02
4V,4.5V,6V,8V,10V
0
0
0
2
4
6
8
ID-Drain Current (A)
0
10
1
3
4
5
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
100
0.3
TJ = 25°C
ID = 6A
0.25
TJ = 25°C
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
0.2
0.15
0.1
10
1
0.1
0.05
0
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
10
2000
F = 1MHz
10V,8V,6V,4.5V,4V
Ciss
8
1500
Capacitance (pf)
ID - Drain Current (A)
1.4
VSD - Source-to-Drain Voltage (V)
3.5V
6
4
3V
1000
500
2
Coss
0
Crss
0
0
0.1
0.2
0.3
0.4
0.5
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AM4562C_1A
Analog Power
AM4562C
Typical Electrical Characteristics - N-channel
2.5
VDS = 30V
ID = 6A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
0
2
1.5
1
0.5
0
5
10
15
20
-50
-25
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
60
PEAK TRANSIENT POWER (W)
100
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
DC
1
Idm limit
50
40
30
20
10
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
RθJA = 110 °C /W
0.1
0.05
0.02
0.01
P(pk)
Single Pulse
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM4562C_1A
Analog Power
AM4562C
0.1
5
0.08
4
TJ = 25°C
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
Typical Electrical Characteristics - P-channel
3.5V
0.06
4V
0.04
4.5V,6V,8V,10V
3
2
1
0.02
0
0
0
1
2
3
4
ID-Drain Current (A)
0
5
1
1. On-Resistance vs. Drain Current
3
4
5
2. Transfer Characteristics
10
0.3
TJ = 25°C
ID = -3.3A
0.25
TJ = 25°C
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
VGS - Gate-to-Source Voltage (V)
0.2
0.15
0.1
1
0.1
0.05
0
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
3000
5
F = 1MHz
10V,8V,6V,4.5
4
2500
Ciss
4V
Capacitance (pf)
ID - Drain Current (A)
0.2
3.5V
3
2
1
2000
1500
1000
500
0
Coss
Crss
0
0
0.1
0.2
0.3
0
5
10
15
20
1000
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
6. Capacitance
5
Publication Order Number:
DS_AM4562C_1A
Analog Power
AM4562C
Typical Electrical Characteristics - P-channel
2
VDS = -30V
ID = -3.3A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
1.5
1
0.5
0
0
10
20
30
-50
40
-25
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
60
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
DC
1
Idm limit
Limited by
RDS
50
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
0.1
RθJA = 110 °C /W
0.05
0.02
0.01
P(pk)
t1
t2
Single Pulse
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AM4562C_1A
Analog Power
AM4562C
Package Information
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie
Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The
Plastic Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In
Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius
Of The Foot.
© Preliminary
7
Publication Order Number:
DS_AM4562C_1A