Analog Power AM4543C N & P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 42 @ VGS = 10V 40 60 @ VGS = 4.5V 30 @ VGS = -10V -40 40 @ VGS = -4.5V ID (A) 5.8 4.8 -6.9 -6.0 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 40 -40 VGS Gate-Source Voltage ±20 ±20 TA=25°C 5.8 -6.9 ID Continuous Drain Current a TA=70°C 4.5 -5.4 b IDM Pulsed Drain Current 30 -30 a I 2.6 -2.7 Continuous Source Current (Diode Conduction) S T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4543C_1A Analog Power AM4543C Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 32 V, VGS = 0 V (N-ch) VDS = -32 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 5.3 A (N-ch) VGS = 4.5 V, ID = 4.4 A (N-ch) VGS = -10V, ID = -5.3 A (P-ch) VGS = -4.5 V, ID = -4.4 A (P-ch) VDS = 15 V, ID = 5.3 A (N-ch) VDS = -15 V, ID = -5.3 A (P-ch) IS = 1.3 A, VGS = 0 V (N-ch) IS = -1.3 A, VGS = 0 V (P-ch) Min Typ Max 1 -1 ±100 1 -1 10 -10 Unit V V nA uA A A 42 60 30 40 13 15 0.77 -0.78 mΩ mΩ S S V V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss N - Channel VDS = 20 V, VGS = 10 V, ID = 5.3 A N - Channel VDD = 20 V, RL = 3.5 Ω, ID = 5.3 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -20 V, VGS = -10 V, ID = -5.3 A P - Channel VDD = -20 V, RL = 3.5 Ω, ID = -5.3 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 3.6 1.3 1.4 2 18 16 5 287 42 34 23 6.3 9.2 8 20 79 33 1834 187 168 nC ns pF nC ns pF Publication Order Number: DS_AM4543C_1A Analog Power AM4543C Typical Electrical Characteristics - N-channel 5 0.15 4 3V ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.1 3.5V 0.05 4V,4.5V,6V,8V,10V 3 2 1 0 0 0 2 4 6 8 10 0 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 10 TJ = 25°C ID = 5.3A IS - Source Current (A) TJ = 25°C 0.2 0.1 0 1 0.1 0.01 0 2 4 6 8 10 0.2 VGS - Gate-to-Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 10 500 F = 1MHz 10V,8V,6V,4.5V,4V 8 400 Capacitance (pf) ID - Drain Current (A) 6 2. Transfer Characteristics 0.3 RDS(on) - On-Resistance(Ω) 2 4 VGS - Gate-to-Source Voltage (V) 3.5V 6 3V 4 Ciss 300 200 2 100 0 0 Coss Crss 0 0.2 0.4 0.6 0.8 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM4543C_1A Analog Power AM4543C Typical Electrical Characteristics - N-channel 2 VDS = 20V ID = 5.3A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0.5 0 -50 0 2 4 6 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 30 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) -25 8 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 25 20 15 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM4543C_1A Analog Power AM4543C 0.1 5 0.08 4 TJ = 25°C ID - Drain Current (A) RDS(on) - On-Resistance(Ω) Typical Electrical Characteristics - P-channel 3V 0.06 3.5V 0.04 3 2 1 0.02 4V,4.5V,6V,8V,10V 0 0 0 2 4 6 8 ID-Drain Current (A) 0 10 1. On-Resistance vs. Drain Current 2 3 4 10 TJ = 25°C ID = -5.3A TJ = 25°C IS - Source Current (A) 0.15 0.1 0.05 0 1 0.1 0.01 0 2 4 6 8 10 0.2 VGS - Gate-to-Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 3000 10 F = 1MHz 10V,8V,6V,4.5V,4V 2500 Capacitance (pf) 8 ID - Drain Current (A) 5 2. Transfer Characteristics 0.2 RDS(on) - On-Resistance(Ω) 1 VGS - Gate-to-Source Voltage (V) 3.5V 6 3V 4 2 Ciss 2000 1500 1000 500 0 Coss Crss 0 0 0.1 0.2 0.3 0.4 0.5 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 5 Publication Order Number: DS_AM4543C_1A Analog Power AM4543C Typical Electrical Characteristics - P-channel 10 2 ID = -5.3A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = -20V 8 6 4 2 0 1.5 1 0.5 0 10 20 30 40 50 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 120 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 100 80 60 40 20 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 0.01 P(pk) t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM4543C_1A Analog Power AM4543C Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4543C_1A