SS1H9, SS1H10 www.vishay.com Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low powevr losses, high efficiency • Low forward voltage drop • Low leakage current • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 90 V, 100 V IFSM 50 A VF 0.62 V IR 1.0 μA TJ max. 175 °C Package DO-214AC (SMA) Diode variations Single TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS1H9 SS1H10 S9 S10 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A V Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Storage temperature range TSTG -65 to +175 °C TJ 175 °C Maximum operating temperature Revision: 18-Dec-14 Document Number: 88747 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1H9, SS1H10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A Maximum instantaneous forward voltage (1) IF = 2.0 A SYMBOL SS1H10 UNIT 0.77 TJ = 125 °C 0.62 VF TJ = 25 °C V 0.86 TJ = 125 °C 0.70 TJ = 25 °C Maximum reverse current at rated VR (2) SS1H9 TJ = 25 °C IR TJ = 125 °C 1.0 μA 0.5 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance (1) SS1H9 SS1H10 RJA 88 RJL 30 UNIT °C/W Note (1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 61T 1800 7" diameter plastic tape and reel SS1H10-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel SS1H10HE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel SS1H10-E3/61T SS1H10HE3_A/I (1) SS1H10HE3_B/H (1) SS1H10HE3_B/I (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 60 Average Forward Current (A) Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 50 40 30 20 10 0 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 18-Dec-14 Document Number: 88747 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1H9, SS1H10 www.vishay.com Vishay General Semiconductor 1000 TJ = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 10 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1.8 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 000 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 100 TJ = 175 °C 1000 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 18-Dec-14 Document Number: 88747 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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