VSSA210 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package TMBS ® • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-214AC (SMA) TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 100 V IFSM 60 A EAS 24 mJ VF at IF = 2.0 A 0.56 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UNIT V2B Device marking code Maximum repetitive peak reverse voltage VSSA210 VRRM 100 V (1) 2.0 IF (2) 1.7 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 60 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 24 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C Maximum DC forward current IF A Notes (1) Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 P.C.B. (2) Free air, mounted on recommended copper pad area Revision: 27-Mar-12 Document Number: 89137 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSA210 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER IR = 1.0 mA Breakdown voltage VBR 100 (minimum) - 0.61 0.70 0.56 0.65 TA = 25 °C 1.0 - μA TA = 125 °C 0.95 - mA TA = 25 °C VF (1) TA = 125 °C VR = 70 V Reverse current IR (2) TA = 25 °C VR = 100 V Typical junction capacitance TYP. TA = 25 °C IF = 2.0 A Instantaneous forward voltage SYMBOL TA = 125 °C CJ 4.0 V, 1 MHz MAX. UNIT V 3.5 150 μA 2.2 15 mA 175 - pF Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VSSA210 RJA (1) 135 RJM (2) 25 UNIT °C/W Notes (1) Free air, mounted on recommended P.C.B. 1 oz. pad area. Thermal resistance R JA - junction to ambient (2) Units mounted on P.C.B. with 8 mm x 8 mm copper pad areas. R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSA210-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel VSSA210-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.6 D = 0.5 1.4 2.0 Average Power Loss (W) Average Forward Rectified Current (A) 2.4 1.6 1.2 0.8 0.4 D = 0.8 D = 0.3 D = 0.2 1.2 1.0 D = 1.0 D = 0.1 0.8 0.6 T 0.4 0.2 TM Measured at Terminal D = tp/T 0 tp 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 27-Mar-12 Document Number: 89137 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSA210 www.vishay.com Vishay General Semiconductor 1000 TA = 125 °C 1 TA = 100 °C 100 TA = 25 °C 0.1 10 0 0.2 0.4 0.6 1.0 0.8 1.2 0.1 1.4 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 Transient Thermal Impedance (°C/W) 10 Instantaneous Reverse Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TA = 150 °C 1 TA = 125 °C TA = 100 °C 0.1 0.01 0.001 TA = 25 °C 20 30 40 50 60 70 80 90 100 10 1 0.01 0.0001 10 Junction to Ambient 100 0.1 1 10 100 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 27-Mar-12 Document Number: 89137 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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