Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N65Z
Power MOSFET
7.4A, 650V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 7N65Z is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
„
FEATURES
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra Low Gate Charge (Typical 29 nC )
* Low Reverse Transfer Capacitance ( CRSS = typical 16pF )
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N65ZL-TA3-T
7N65ZG-TA3-T
7N65ZL-TQ2-T
7N65ZG-TQ2-T
7N65ZL-TQ2-R
7N65ZG-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-263
TO-263
S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1
G
G
G
Pin Assignment
2
D
D
D
3
S
S
S
Packing
Tube
Tube
Tape Reel
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QW-R502-586.B
7N65Z
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7.4
A
Continuous Drain Current
ID
7.4
A
Pulsed Drain Current (Note 1)
IDM
29.6
A
600
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
142
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
62.5
0.88
UNIT
°C/W
°C/W
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QW-R502-586.B
7N65Z
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
VDS = 650V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate- Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD =325V, ID =7.4A,
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=520V, ID=7.4A,
Gate-Source Charge
QGS
VGS=10 V (Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 7.4 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 7.4A,
dIF / dt = 100A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
10
-10
V
μA
μA
μA
V/°C
0.94
4.0
1.2
V
Ω
16
1400
180
21
pF
pF
pF
70
170
140
130
38
ns
ns
ns
ns
nC
nC
nC
1.4
V
7.4
A
29.6
A
0.67
29
7
14.5
320
2.4
ns
μC
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„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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7N65Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2μF
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
1mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
„
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
200
150
100
50
50
0
0
0 100 200 300 400 500 600 700
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State Resistance
Characteristics
4
3
VGS=10V
ID=3.7A
2
1
0
0
0.5 1
2
1.5
2.5 3 3.5
Gate Threshold Voltage, VTH (V)
Drain Current vs. Source to Drain Voltage
10
Drain Current, ID (A)
Drain Current, ID (A)
5
0
8
6
4
2
0
1
2
3
Drain to Source Voltage, VDS (V)
4
0
0.4
0.6
0.8 1.0 1.2
0.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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