UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON) < 0.2Ω @ VGS=-10V, ID=-12A * High Switching Speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT12P10L-TM3-T UTT12P10G-TM3-T UTT12P10L-TN3-R UTT12P10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-722.F UTT12P10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Continuous, TC=25°C ID -12 A VGSS@-10V Drain Current Pulsed (Note 2) IDM -48 A 60 mJ Single Pulsed (Note 2) EAS Power Dissipation (TC=25°C) PD 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. VDD=-25V, starting TJ=25°C, L=0.83mH, RG=25Ω, IAS=12A. (See Figure 2) THERMAL DATA PARAMETER SYMBOL θJC Junction to Case RATINGS 1.0 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=-250µA, VGS=0V VDS=-100V, VGS=0V VGS=+20V VGS=-20V MIN TYP MAX UNIT -100 -1 +100 -100 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -2.0 -4.0 Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-12A (Note 2) 0.2 DYNAMIC PARAMETERS Input Capacitance CISS 1400 VDS=-25V, VGS=0V, f=1.0MHz Output Capacitance COSS 590 140 Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 40 50 VDD=-50V, ID=-12A, RG=9.1Ω, Rise Time tR 38 45 RD = 2.4Ω, See Fig. 1(Note 2) Turn-OFF Delay Time tD(OFF) 314 330 Fall-Time tF 66 75 Total Gate Charge QG 35 40 VDS=-80V, VGS=-10V, ID=-12A, Gate to Source Charge QGS 8 See Fig 3 (Note 2) 6 Gate to Drain ("Miller") Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS -12 Maximum Body-Diode Pulsed Current ISM (Note 1) -48 Drain-Source Diode Forward Voltage VSD TJ=25°C, IS=-12A,VGS=0V(Note 2) -5.0 Body Diode Reverse Recovery Time tRR 130 260 TJ=25°C, IF=-12A, di/dt=100A/µs (Note 2) 0.35 0.70 Body Diode Reverse Recovery Charge QRR Notes: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. Pulse width ≤ 300µs; duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw V µA nA nA V Ω pF pF pF ns ns ns ns nC nC nC A A V ns µC 2 of 6 QW-R502-722.F UTT12P10 TEST CIRCUITS AND WAVEFORMS VGS VDS VDS 90% RG D.U.T. RD -10V VDD + Power MOSFET Pulse Width≤1μs Duty Factor≤0.1% 10% VGS TD(ON) TR TD(OFF) TF Fig. 1a Switching Time Test Circuit Fig. 1b Switching Time Waveforms Fig. 2a Unclampled Inductive Test Circuit Fig. 2b Unclampled Inductive Waveforms Fig.3a Gate Charge Test Circuit Fig. 3b Gate Charge Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-722.F UTT12P10 TEST CIRCUITS AND WAVEFORMS(Cont.) + Power MOSFET Notes: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-12A. (See Figure 2) 3. ISD≤-12A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-722.F UTT12P10 TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, -ID (µA) Drain Current, -ID (µA) Power MOSFET 200 150 100 50 0 250 200 150 100 50 0 30 60 90 120 0 0 150 0.5 1 1.5 2 2.5 3 Gate Threshold Voltage, -VTH (V) Drain Current, -ID (A) Drain Current, -ID (A) Drain-Source Breakdown Voltage, -BVDSS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-722.F UTT12P10 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-722.F