DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4230QA. 2. Features and benefits • • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications • • • • • Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -30 V IC collector current - - -2 A ICM peak collector current tp ≤ 1 ms; pulsed - - -3 A RCEsat collector-emitter saturation resistance IC = -1 A; IB = -100 mA; pulsed; - 120 180 mΩ tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector 4 C collector Simplified outline Graphic symbol C 1 B 4 3 E sym132 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package PBSS5230QA Name Description Version DFN1010D-3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals SOT1215 7. Marking Table 4. Marking codes Type number Marking code PBSS5230QA 00 00 10 MARKING CODE (EXAMPLE) READING DIRECTION YEAR DATE CODE VENDOR CODE PIN 1 INDICATION MARK MARK-FREE AREA READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary marking code description PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 2 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -30 V VCEO collector-emitter voltage open base - -30 V VEBO emitter-base voltage open collector - -7 V IC collector current - -2 A ICM peak collector current - -3 A IB base current - -0.3 A IBM peak base current tp ≤ 1 ms; pulsed - -1 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 325 mW [2] - 600 mW [3] - 740 mW [4] - 540 mW [5] - 1000 mW tp ≤ 1 ms; pulsed Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm . Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [4] [5] PBSS5230QA Product data sheet 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm . 2 2 Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm . All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 3 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor aaa-007844 1.25 Ptot (W) 1.00 (1) 0.75 (2) (3) 0.50 (4) (5) 0.25 0 -75 -25 (1) FR4 PCB, 4-layer copper, 1 cm 25 75 125 175 Tamb (°C) 2 (2) FR4 PCB, single-sided copper, 6 cm 2 2 (3) FR4 PCB, single-sided copper, 1 cm (4) FR4 PCB, 4-layer copper, standard footprint (5) FR4 PCB, single-sided copper, standard footprint Fig. 2. Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Product data sheet in free air Min Typ Max Unit [1] - - 385 K/W [2] - - 209 K/W [3] - - 169 K/W [4] - - 232 K/W [5] - - 125 K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm . Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [4] [5] PBSS5230QA Conditions 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm . 2 2 Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm . All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 4 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor aaa-007845 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-007846 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 FR4 PCB, single-sided copper, 1 cm Fig. 4. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 5 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor aaa-007847 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 10 0.05 0.02 0.01 1 10-5 0 10-4 10-3 10-2 FR4 PCB, single-sided copper, 6 cm Fig. 5. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-007848 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 1 10-5 0.01 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, 4-layer copper, standard footprint Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 6 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor aaa-007849 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 10-5 0.01 0 10-4 10-3 FR4 PCB, 4-layer copper, 1 cm Fig. 7. 10-2 10-1 1 102 10 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -24 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -24 V; IE = 0 A; Tj = 150 °C - - -50 µA ICES collector-emitter cut-off VCE = -24 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -2 V; IC = -100 mA; tp ≤ 300 µs; 250 425 - 180 295 - 130 200 - 60 95 - - -70 -100 mV - -140 -210 mV - -120 -180 mV δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCE = -2 V; IC = -500 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCE = -2 V; IC = -1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCE = -2 V; IC = -2 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCEsat collector-emitter saturation voltage IC = -500 mA; IB = -50 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -1 A; IB = -50 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 7 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit IC = -2 A; IB = -100 mA; pulsed; - -275 -410 mV - -220 -330 mV - 120 180 mΩ - -0.86 -1 V - -0.89 -1.05 V - -0.98 -1.15 V - -1.02 -1.2 V - -0.77 -0.9 V tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C RCEsat VBEsat collector-emitter saturation resistance IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C base-emitter saturation IC = -500 mA; IB = -50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -2 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = -2 V; IC = -0.5 A; pulsed; td delay time VCC = -10 V; IC = -0.5 A; IBon = -25 mA; - 10 - ns tr rise time IBoff = 25 mA; Tamb = 25 °C - 30 - ns ton turn-on time - 40 - ns ts storage time - 270 - ns tf fall time - 45 - ns toff turn-off time - 315 - ns fT transition frequency 120 170 - MHz - 14 16 pF tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = -10 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 8 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 103 aaa-008224 IB (mA) = -35 IC (A) (2) hFE aaa-008225 -3 (1) -31.5 -28 -24.5 -21 -2 (3) -17.5 -14 -10.5 102 -7 -3.5 -1 10 -10-1 -1 -102 -10 0 -103 -104 IC (mA) VCE = −2 V -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 9. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = −55 °C Fig. 8. 0 DC current gain as a function of collector current; typical values aaa-008226 -1.2 aaa-008227 -1.2 VBE (V) VBEsat (V) (1) (1) -0.8 -0.8 (2) (2) (3) (3) -0.4 0 -10-1 -0.4 -1 -10 -102 0 -10-1 -103 -104 IC (mA) -1 -10 VCE = −2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig. 10. Base-emitter voltage as a function of collector current; typical values PBSS5230QA Product data sheet -102 -103 -104 IC (mA) Fig. 11. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 9 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor aaa-008228 -1 VCEsat (V) VCEsat (V) -10-1 -10-1 (2) (3) (1) aaa-008229 -1 (1) (2) -10-2 -10-3 -10-1 -10-2 -1 -10 -102 -10-3 -10-1 -103 -104 IC (mA) (3) -1 -10 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 12. Collector-emitter saturation voltage as a function of collector current; typical values aaa-008230 103 -102 -103 -104 IC (mA) Fig. 13. Collector-emitter saturation voltage as a function of collector current; typical values aaa-008231 103 RCEsat (Ω) RCEsat (Ω) 102 102 (1) 10 10 1 10-1 -10-1 -10 -102 (3) 1 (1) (2) (3) -1 (2) 10-1 -10-1 -103 -104 IC (mA) -1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 14. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5230QA Product data sheet -10 -102 -103 -104 IC (mA) Fig. 15. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 10 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 16. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 17. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 11 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 12. Package outline 0.87 0.95 0.75 1 0.95 1.05 0.22 0.30 2 0.16 0.24 0.1 3 0.04 max 0.34 0.40 Dimensions in mm 0.17 0.25 0.245 0.325 1.05 1.15 0.195 0.275 13-03-05 Fig. 18. Package outline DFN1010D-3 (SOT1215) PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 12 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 19. Reflow soldering footprint for DFN1010D-3 (SOT1215) PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 13 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5230QA v.1 20130823 Product data sheet - - PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 14 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. 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PBSS5230QA Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 15 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 16 / 17 PBSS5230QA NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 7 11 11.1 Test information ................................................... 11 Quality information ............................................. 11 12 Package outline ................................................... 12 13 Soldering .............................................................. 13 14 Revision history ................................................... 14 15 15.1 15.2 15.3 15.4 Legal information .................................................15 Data sheet status ............................................... 15 Definitions ...........................................................15 Disclaimers .........................................................15 Trademarks ........................................................ 16 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 August 2013 PBSS5230QA Product data sheet All information provided in this document is subject to legal disclaimers. 23 August 2013 © NXP N.V. 2013. All rights reserved 17 / 17