SO T2 3 PBSS5130T 30 V; 1 A PNP low VCEsat (BISS) transistor 9 July 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • Small SMD plastic package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -30 V IC collector current - - -1 A ICM peak collector current single pulse; tp ≤ 1 ms - - -3 A RCEsat collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed; - - 220 mΩ tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol C 3 B 1 2 TO-236AB (SOT23) E sym132 6. Ordering information Table 3. Ordering information Type number PBSS5130T Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PBSS5130T %3E [1] PBSS5130T Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 9 July 2013 © NXP N.V. 2013. All rights reserved 2 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -30 V VCEO collector-emitter voltage open base - -30 V VEBO emitter-base voltage open collector - -5 V IC collector current - -1 A ICM peak collector current - -3 A IBM peak base current - -300 mA Ptot total power dissipation [1] - 300 mW [2] - 480 mW single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient [1] [2] PBSS5130T Product data sheet Conditions in free air Min Typ Max Unit [1] - - 417 K/W [2] - - 260 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . All information provided in this document is subject to legal disclaimers. 9 July 2013 © NXP N.V. 2013. All rights reserved 3 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -30 V; IE = 0 A; Tj = 150 °C - - -50 µA IEBO emitter-base cut-off current VEB = -4 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -2 V; IC = -100 mA; pulsed; 300 450 - 260 350 - 210 290 - - - -100 mV - - -225 mV - - 220 mΩ tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = -100 mA; IB = -1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C RCEsat collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEsat base-emitter saturation IC = -2 A; IB = -200 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -1.1 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -100 mA; pulsed; - - -0.75 V transition frequency VCE = -10 V; IC = -100 mA; 100 200 - MHz - - 28 pF fT tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C f = 100 MHz; Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C PBSS5130T Product data sheet All information provided in this document is subject to legal disclaimers. 9 July 2013 © NXP N.V. 2013. All rights reserved 4 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor aaa-006394 1000 aaa-006395 -1.0 hFE IB (mA) = -3 IC (A) 800 -2.7 -0.8 -2.4 (1) -2.1 600 -1.8 -0.6 -1.5 -1.2 (2) 400 -0.4 -0.9 -0.6 (3) 200 -0.2 -0.3 0 -10-1 -1 -10 -102 0 -103 -104 IC (mA) VCE = -2 V -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C (1) Tamb = 150 °C Fig. 2. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = -55 °C Fig. 1. 0 DC current gain as a function of collector current; typical values aaa-006396 -1200 aaa-006397 -1200 VBE (mV) VBEsat (mV) (1) (1) -800 -800 (2) (2) (3) -400 0 -10-1 Fig. 3. -400 (3) -1 -10 -102 0 -10-1 -103 -104 IC (mA) -1 -10 VCE = -2 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values PBSS5130T Product data sheet Fig. 4. -103 -104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 9 July 2013 -102 © NXP N.V. 2013. All rights reserved 5 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor aaa-006398 -103 aaa-006406 103 RCEsat (Ω) VCEsat (mV) 102 (1) (2) -102 (3) 10 -10 (1) (2) 1 (3) -1 -10-1 Fig. 5. -1 -10 -102 10-1 -10-1 -103 -104 IC (mA) -1 -10 IC/IB = 20 IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = -55 °C Collector-emitter saturation voltage as a function of collector current; typical values Fig. 6. -102 -103 -104 IC (mA) Collector-emitter saturation resistance as a function of collector current; typical values 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm Fig. 7. 0.15 0.09 04-11-04 Package outline TO-236AB (SOT23) PBSS5130T Product data sheet All information provided in this document is subject to legal disclaimers. 9 July 2013 © NXP N.V. 2013. All rights reserved 6 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 Fig. 8. sot023_fr Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 Fig. 9. sot023_fw Wave soldering footprint for TO-236AB (SOT23) PBSS5130T Product data sheet All information provided in this document is subject to legal disclaimers. 9 July 2013 © NXP N.V. 2013. All rights reserved 7 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5130T v.2 20130709 Product data sheet - PBSS5130T v.1 Modifications: • • • • • • • • • • • PBSS5130T v.1 PBSS5130T Product data sheet The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Sections "General description", "Features and benefits" and "Applications": updated Section "Marking": updated Table "Limiting values": ambient temperature Tamb updated Table "Characteristics": base-emitter saturation voltage VBEsat added Figures 1 to 6: added Section "Test information": added Figure "Package outline TO-236AB (SOT23)": replaced by minimized outline drawing Section "Soldering": added Section "Legal information": updated 20031212 Product data sheet - All information provided in this document is subject to legal disclaimers. 9 July 2013 - © NXP N.V. 2013. All rights reserved 8 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PBSS5130T Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 9 July 2013 © NXP N.V. 2013. All rights reserved 9 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PBSS5130T Product data sheet All information provided in this document is subject to legal disclaimers. 9 July 2013 © NXP N.V. 2013. All rights reserved 10 / 11 PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 4 11 11.1 Test information ..................................................... 6 Quality information ............................................... 6 12 Package outline ..................................................... 6 13 Soldering ................................................................ 7 14 Revision history ..................................................... 8 15 15.1 15.2 15.3 15.4 Legal information ...................................................9 Data sheet status ................................................. 9 Definitions .............................................................9 Disclaimers ...........................................................9 Trademarks ........................................................ 10 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 July 2013 PBSS5130T Product data sheet All information provided in this document is subject to legal disclaimers. 9 July 2013 © NXP N.V. 2013. All rights reserved 11 / 11