PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −30 V IC collector current - - −2.4 A ICM peak collector current single pulse; tp ≤ 1 ms - - −5 A RCEsat collector-emitter saturation resistance IC = −2 A; IB = −200 mA - 110 165 mΩ [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 sym013 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4032PT - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS4032PT *BN [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −30 V VCEO collector-emitter voltage open base - −30 V VEBO emitter-base voltage open collector - −5 V IC collector current - −2.4 A ICM peak collector current - −5 A IB base current - −0.5 A single pulse; tp ≤ 1 ms PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 2 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 390 mW [2] - 660 mW [3] - 1100 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aab954 1.5 Ptot (W) (1) 1.0 (2) 0.5 0 −75 (3) −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 3 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 320 K/W [2] - - 190 K/W [3] - - 115 K/W - - 62 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aab955 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 4 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 006aab956 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab957 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 5 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions collector-base cut-off VCB = −30 V; IE = 0 A current VCB = −30 V; IE = 0 A; Tj = 150 °C Typ Max Unit - - −100 nA - - −55 μA ICES collector-emitter cut-off current VCE = −24 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V; IC = −500 mA 200 320 - VCEsat collector-emitter saturation voltage VCE = −2 V; IC = −1 A [1] 150 230 - VCE = −2 V; IC = −2 A [1] - 100 - VCE = −2 V; IC = −3 A [1] - 50 - - −95 −150 mV IC = −500 mA; IB = −50 mA IC = −1 A; IB = −50 mA [1] - −155 −230 mV IC = −1 A; IB = −10 mA [1] - −250 −375 mV IC = −2 A; IB = −200 mA [1] - −220 −330 mV RCEsat collector-emitter IC = −2 A; IB = −200 mA saturation resistance [1] - 110 165 mΩ VBEsat base-emitter saturation voltage IC = −1 A; IB = −100 mA [1] - −0.86 −0.95 V IC = −2 A; IB = −200 mA [1] - −0.95 −1.05 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −0.5 A - −0.75 −0.9 V td delay time - 15 - ns tr rise time - 55 - ns ton turn-on time VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A - 70 - ns ts storage time - 125 - ns tf fall time - 60 - ns toff turn-off time - 185 - ns fT transition frequency - 160 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 40 - pF [1] VCE = −10 V; IC = −100 mA; f = 100 MHz Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PBSS4032PT_1 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 6 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 006aab966 600 (1) hFE 006aab967 −3.0 IB (mA) = −50 −45 −40 −35 IC (A) −30 −2.0 400 −25 −20 −15 (2) −10 −5 (3) −1.0 200 0 −10−1 −1 −10 −102 0.0 0.0 −103 −104 IC (mA) VCE = −2 V −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aab968 −1.8 VBE (V) Fig 6. Collector current as a function of collector-emitter voltage; typical values 006aab969 −1.4 VBEsat (V) −1.2 −1.0 (1) (1) (2) (2) −0.6 −0.6 (3) (3) 0.0 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 VCE = −2 V −1 −103 −104 IC (mA) (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values PBSS4032PT_1 Product data sheet −102 IC/IB = 20 (1) Tamb = −55 °C Fig 7. −10 © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 7 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 006aab970 −1 VCEsat (V) 006aab971 −1 VCEsat (V) (1) −10−1 −10−1 (1) (2) (2) (3) −10−2 −10−1 −1 −10 −102 (3) −103 −104 IC (mA) −10−2 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. −10 Collector-emitter saturation voltage as a function of collector current; typical values 006aab972 103 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 006aab973 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) (2) 1 (1) (2) 1 10−1 (3) (3) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−2 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS4032PT_1 Product data sheet −10 © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 8 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 9 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 15. Package outline SOT23 (TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS4032PT [1] Package Description SOT23 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 14. PBSS4032PT_1 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 10 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 16. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 17. Wave soldering footprint SOT23 (TO-236AB) PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 11 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4032PT_1 20091218 Product data sheet - - PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 12 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 18 December 2009 13 of 14 PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 December 2009 Document identifier: PBSS4032PT_1