1.5SMC Series Datasheet

1.5SMC Series
www.vishay.com
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-214AB (SMCJ)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
5.8 V to 459 V
VBR (uni-directional)
6.8 V to 540 V
VBR (bi-directional)
6.8 V to 220 V
PPPM
1500 W
PD
6.5 W
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
IFSM (uni-directional only)
200 A
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
Package
DO-214AB (SMCJ)
MECHANICAL DATA
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional
1.5SMC220CA).
devices
use
CA
suffix
(e.g.
Electrical characteristics apply in both directions.
Case: DO-214AB (SMCJ) 
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Base P/NHE3 - RoHS compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
(1)
(1)(2)
(fig. 1)
(fig. 3)
Power dissipation on infinite heatsink at TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
1500
W
IPPM
See next table
A
PD
6.5
W
IFSM
200
A
TJ, TSTG
- 65 to + 150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
Revision: 20-Dec-13
Document Number: 88303
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1.5SMC Series
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PART
NUMBER
DEVICE
MARKING
CODE
UNI
BI
BREAKDOWN
STAND-OFF
VOLTAGE
TEST
VBR AT IT (1)
CURRENT VOLTAGE
VWM
(V)
IT
(V)
(mA)
MIN. MAX.
1.5SMC6.8A
6V8A 6V8C
6.45
7.14
10
5.80
1.5SMC7.5A
7V5A 7V5C
7.13
7.88
10
6.40
1.5SMC8.2A
8V2A 8V2C
7.79
8.61
10
7.02
1.5SMC9.1A
9V1A 9V1C
8.65
9.55
1.0
7.78
1.5SMC10A
10A
10C
9.50
10.5
1.0
8.55
1.5SMC11A
11A
11C
10.5
11.6
1.0
9.40
1.5SMC12A
12A
12C
11.4
12.6
1.0
10.2
1.5SMC13A
13A
13C
12.4
13.7
1.0
11.1
1.5SMC15A
15A
15C
14.3
15.8
1.0
12.8
1.5SMC16A
16A
16C
15.2
16.8
1.0
13.6
1.5SMC18A
18A
18C
17.1
18.9
1.0
15.3
1.5SMC20A
20A
20C
19.0
21.0
1.0
17.1
1.5SMC22A
22A
22C
20.9
23.1
1.0
18.8
1.5SMC24A
24A
24C
22.8
25.2
1.0
20.5
1.5SMC27A
27A
27C
25.7
28.4
1.0
23.1
1.5SMC30A
30A
30C
28.5
31.5
1.0
25.6
1.5SMC33A
33A
33C
31.4
34.7
1.0
28.2
1.5SMC36A
36A
36C
34.2
37.8
1.0
30.8
1.5SMC39A
39A
39C
37.1
41.0
1.0
33.3
1.5SMC43A
43A
43C
40.9
45.2
1.0
36.8
1.5SMC47A
47A
47C
44.7
49.4
1.0
40.2
1.5SMC51A
51A
51C
48.5
53.6
1.0
43.6
1.5SMC56A
56A
56C
53.2
58.8
1.0
47.8
1.5SMC62A
62A
62C
58.9
65.1
1.0
53.0
1.5SMC68A
68A
68C
64.6
71.4
1.0
58.1
1.5SMC75A
75A
75C
71.3
78.8
1.0
64.1
1.5SMC82A
82A
82C
77.9
86.1
1.0
70.1
1.5SMC91A
91A
91C
86.5
95.5
1.0
77.8
1.5SMC100A
100A 100C
95.0
105
1.0
85.5
1.5SMC110A
110A 110C
105
116
1.0
94.0
1.5SMC120A
120A 120C
114
126
1.0
102
1.5SMC130A
130A 130C
124
137
1.0
111
1.5SMC150A
150A 150C
143
158
1.0
128
1.5SMC160A
160A 160C
152
168
1.0
136
1.5SMC170A
170A 170C
162
179
1.0
145
1.5SMC180A
180A 180C
171
189
1.0
154
1.5SMC200A
200A 200C
190
210
1.0
171
1.5SMC220A
220A 220C
209
231
1.0
185
1.5SMC250A
250A
237
263
1.0
214
1.5SMC300A
300A
285
315
1.0
256
1.5SMC350A
350A
333
368
1.0
300
1.5SMC400A
400A
380
420
1.0
342
1.5SMC440A
440A
418
462
1.0
376
1.5SMC480A
480A
456
504
1.0
408
1.5SMC510A
510A
485
535
1.0
434
1.5SMC540A
540A
513
567
1.0
459
Notes
(1) Pulse test: t  50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bi-directional types with V of 10 V and less, the I limit is doubled
R
D
(5) V = 3.5 V at I = 100 A (uni-directional only)
F
F
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (4)
(μA)
1000
500
200
50
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2)
(A)
143
133
124
112
103
96.2
89.8
82.4
70.8
66.7
59.5
54.2
49.0
45.2
40.0
36.2
32.8
30.1
27.8
25.3
23.1
21.4
19.5
17.6
16.3
14.6
13.3
12.0
10.9
9.9
9.1
8.4
7.2
6.8
6.4
6.1
5.5
4.6
4.4
3.6
3.1
2.7
2.5
2.28
2.15
2.03
MAXIMUM
MAXIMUM
CLAMPING TEMPERATURE
COEFFICIENT
VOLTAGE
OF VBR
AT IPPM
VC (V)
(%/°C)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
104
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.089
0.090
0.092
0.090
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.106
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Revision: 20-Dec-13
Document Number: 88303
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1.5SMC Series
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to ambient air (1)
RJA
75
Typical thermal resistance, junction to leads
RJL
15
UNIT
°C/ W
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
UNIT
WEIGHT
(g)
PREFERRED P/N
1.5SMC6.8A-E3/57T
0.211
VOLTAGE RANGE (V)
UNI -
BI -
PACKAGE
CODE
BASE
QUANTITY
DELIVERY MODE
6.8 to 540
6.8 to 220
57T
850
7" diameter plastic tape and reel
1.5SMC6.8A-E3/9AT
0.211
6.8 to 540
6.8 to 220
9AT
3500
13" diameter plastic tape and reel
1.5SMC6.8AHE3/57T (1)
0.211
6.8 to 540
6.8 to 220
57T
850
7" diameter plastic tape and reel
(1)
0.211
6.8 to 540
6.8 to 220
9AT
3500
13" diameter plastic tape and reel
0.211
250 to 540
-
H
850
7" diameter plastic tape and reel
0.211
250 to 540
-
I
3500
13" diameter plastic tape and reel
1.5SMC6.8AHE3/9AT
1.5SMC250AHE3_A/H
(1)
1.5SMC250AHE3_A/I (1)
Note
AEC-Q101 qualified



(1)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
PPPM - Peak Pulse Power (kW)
100
10
1
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
100
75
50
25
0
0
25
50
75
100
125
150
175
200
td - Pulse Width (s)
TJ - Initial Temperature (°C)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 20-Dec-13
Document Number: 88303
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1.5SMC Series
www.vishay.com
100
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Transient Thermal Impedance (°C/W)
IPPM - Peak Pulse Current, % IRSM
Vishay General Semiconductor
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
1.0
2.0
3.0
4.0
0.01
0.1
1
10
100
1000
t - Time (ms)
tp - Pulse Duration (s)
Fig. 3 - Pulse Waveform
Fig. 5 - Typical Transient Thermal Impedance
20 000
200
Peak Forward Surge Current (A)
Measured at
Zero Bias
10 000
CJ - Junction Capacitance (pF)
1.0
0.1
0.001
0
0
10
1000
VR, Measured
at Stand-Off
Voltage VWM
100
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
100
TJ = TJ max.
8.3 ms Single Half Sine-Wave
10
1
10
100
400
1
100
10
VWM - Reverse Stand-Off Voltage (V)
Number of Cycles at 60 Hz
Fig. 4 - Typical Junction Capacitance Uni-Directional
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMCJ)
Mounting Pad Layout
Cathode Band
0.185 (4.69)
MAX.
0.126 (3.20)
0.246 (6.22)
0.220 (5.59)
0.114 (2.90)
0.126 (3.20)
MIN.
0.280 (7.11)
0.060 (1.52)
MIN.
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.320 REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 20-Dec-13
Document Number: 88303
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000