UNISONIC TECHNOLOGIES CO., LTD UF6N15Z Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UF6N15Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. SOT-223 FEATURES * R DS(ON) <1.95Ω @ V GS =10V, I D =6A * High switching speed * Typically 3.2nC low gate charge * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF6N15ZL-AA3-R UF6N15ZG-AA3-R Note: Pin Assignment: G: Gate D: Drain S: Source UF6N15L-AA3-R Package SOT-223 Pin Assignment 1 2 3 G D S (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AA3: SOT-223 (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Packing Tape Reel 1 of 3 QW-R502-759.B UF6N15Z Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT V DSS 150 V V GSS ±20 V Continuous ID 6 A Continuous Drain Current Pulsed I DM 24 A Avalanche Energy E AS 52 mJ Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature Range T STG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =250µA, V GS =0V Drain-Source Leakage Current I DSS V DS =150V Forward V GS =+20V, V DS =0V Gate-Source Leakage Current I GSS Reverse V GS =-20V, V DS =0V ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) I D =250µA Static Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =6A DYNAMIC PARAMETERS Input Capacitance C ISS Output Capacitance C OSS V GS =0V, V DS =25V, f=1MHz Reverse Transfer Capacitance C RSS SWITCHING PARAMETERS Total Gate Charge QG V DD =50V, I D =6A, I G =100µA, Gate to Source Charge Q GS V GS =10V Gate to Drain Charge Q GD Turn-ON Delay Time t D(ON) Rise Time tR V DD =30V, I D =1A, R G =25Ω, V GS =10V Turn-OFF Delay Time t D(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current I SM Drain-Source Diode Forward Voltage V SD I S =6A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 150 2 190 70 20 1 10 -10 V µA µA µA 4 1.95 V Ω 300 100 50 pF pF pF 3.2 0.64 1.6 6 38 11 13 nC nC nC ns ns ns ns 6 24 1.48 A A V 2 of 3 QW-R502-759.B UF6N15Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 200 150 100 50 50 0 0 40 80 120 160 0 0 200 2.1 2.8 3.5 4.2 Drain Current vs. Source to Drain Voltage 0.6 1.2 0.5 1.0 Drain Current, ID (A) Drain Current, ID (A) Drain-Source On-State Resistance Characteristics VGS=10V, ID=0.425A 0.3 0.2 0.8 0.6 0.4 0.2 0.1 0 1.4 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS (V) 0.4 0.7 0 0.05 0.1 0.15 0.2 0.25 Drain to Source Voltage, VDS (V) 0.3 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-759.B