DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 17 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage −50 V IC collector current (DC) −2 A • Higher efficiency leading to less heat generation ICM peak collector current −5 A • Reduced printed-circuit board requirements. RCEsat equivalent on-resistance 160 mΩ • High collector current capability: IC and ICM PARAMETER MAX. UNIT PINNING APPLICATIONS • Power management PIN DESCRIPTION – DC/DC converters 1 emitter – Supply line switching 2 collector – Battery charger 3 base – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). 2 3 DESCRIPTION 1 PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4250X. 3 2 1 sym079 MARKING PBSS5250X Fig.1 Simplified outline (SOT89) and symbol. MARKING CODE(1) TYPE NUMBER *1L Note 1. * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China. 2004 Nov 04 2 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5250X SC-62 DESCRIPTION VERSION plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −2 A ICM peak collector current − −5 A IB base current (DC) − −0.5 A Ptot total power dissipation note 1 − 550 mW note 2 Tj(max) Tamb ≤ 25 °C − 1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 2004 Nov 04 3 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT note 1 225 K/W note 2 125 K/W note 3 90 K/W note 4 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 006aaa243 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. Fig.2 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 4 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X 006aaa244 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 006aaa245 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 5 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. MAX. UNIT VCB = −50 V; IE = 0 A − −100 nA VCB = −50 V; IE = 0 A; Tj = 150 °C − −50 μA ICES collector-emitter cut-off current VCE = −50 V; VBE = 0 V − −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − −100 nA hFE DC current gain VCE = −2 V IC = −0.1 A 200 − IC = −0.5 A 200 − IC = −1 A; note 1 200 − IC = −2 A; note 1 100 − IC = −0.5 A; IB = −50 mA − −90 mV IC = −1 A; IB = −50 mA − −250 mV IC = −2 A; IB = −100 mA − −380 mV IC = −2 A; IB = −200 mA; note 1 − −320 mV VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − 160 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −100 mA − −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −1 A −1.1 − V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 − MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − 35 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Nov 04 6 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 04 REFERENCES IEC JEDEC JEITA TO-243 SC-62 7 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Nov 04 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp9 Date of release: 2004 Nov 04 Document order number: 9397 750 13886