DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X QUICK REFERENCE DATA FEATURES • SOT89 (SC-62) package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage 20 V • High collector current capability: IC and ICM IC collector current (DC) 3 A • Higher efficiency leading to less heat generation ICM peak collector current 5 • Reduced printed-circuit board requirements. RCEsat equivalent on-resistance 105 PARAMETER MAX. UNIT A mΩ PINNING APPLICATIONS • Power management PIN DESCRIPTION – DC/DC converters 1 emitter – Supply line switching 2 collector – Battery charger 3 base – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). 2 3 DESCRIPTION 1 NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5320X. sym042 3 2 1 MARKING TYPE NUMBER MARKING CODE PBSS4320X Fig.1 Simplified outline (SOT89) and symbol. S44 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4320X 2004 Nov 03 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) note 4 − 3 A ICM peak collector current limited by Tj(max) − 5 A IB base current (DC) − 0.5 A Ptot total power dissipation note 1 − 550 mW note 2 − 1 W note 3 − 1.4 W note 4 − 1.6 W Tamb ≤ 25 °C Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 2004 Nov 03 3 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X MLE372 2 handbook, halfpage Ptot (W) (1) 1.6 (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 (1) Ceramic PCB; 7 cm2 mounting pad for collector. (2) FR4 PCB; 6 cm2 copper mounting pad for collector. 80 120 160 Tamb (°C) (3) FR4 PCB; 1 cm2 copper mounting pad for collector. (4) Standard footprint. Fig.2 Power derating curves. 2004 Nov 03 4 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT note 1 225 K/W note 2 125 K/W note 3 90 K/W note 4 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 006aaa243 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 03 5 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X 006aaa244 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa245 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 03 6 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 20 V; IE = 0 A − − 100 nA VCB = 20 V; IE = 0 A; Tj = 150 °C − − 50 μA ICES collector-emitter cut-off current VCE = 20 V; VBE = 0 V − − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 2 V IC = 0.1 A 220 − − IC = 0.5 A 220 − − IC = 1 A; note 1 220 − − IC = 2 A; note 1 200 − − IC = 3 A; note 1 VCEsat collector-emitter saturation voltage 150 − − IC = 0.5 A; IB = 50 mA − − 70 mV IC = 1 A; IB = 50 mA − − 120 mV IC = 2 A; IB = 100 mA − − 240 mV IC = 3 A; IB = 300 mA; note 1 − − 310 mV RCEsat equivalent on-resistance IC = 3 A; IB = 300 mA; note 1 − 85 105 mΩ VBEsat base-emitter saturation voltage IC = 2 A; IB = 100 mA − 1.1 − V IC = 3 A; IB = 300 mA; note 1 − − 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A 1.1 − − V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz − − 35 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Nov 03 7 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X MLE383 800 MLE381 1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 600 (1) (1) 0.8 (2) (2) 400 (3) 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. MLE377 1 10 102 Base-emitter voltage as a function of collector current; typical values. MLE384 1 handbook, halfpage 103 104 IC (mA) handbook, halfpage VCEsat (V) VCEsat (V) (1) (2) 10−1 10−1 (3) (1) 10−2 (2) 10−2 (3) 10−3 10−1 1 10 102 10−3 10−1 103 104 IC (mA) (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.8 Fig.9 IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 03 8 1 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X MLE382 1.2 MLE379 103 handbook, halfpage handbook, halfpage RCEsat VBEsat (Ω) (V) 102 1 (1) (2) 0.8 10 (3) (1) (2) 1 0.6 (3) 10−1 0.4 0.2 10−1 1 10 102 10−2 −1 10 103 104 IC (mA) 1 102 10 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. (1) IC/IB = 100. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Equivalent on-resistance as a function of collector current; typical values. Tamb = 25 °C. mle380 102 (2) IC/IB = 50. MLE378 5 handbook, halfpage (1) (2) (3) IC (A) RCEsat (Ω) (3) IC/IB = 10. 4 (4) 10 (5) (6) 3 (7) 1 (8) 2 (9) 10−1 (1) (2) 10−2 10−1 1 10 102 (10) 1 (3) 0 103 104 IC (mA) 0 0.4 0.8 1.2 1.6 2 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.12 Equivalent on-resistance as a function of collector current; typical values. 2004 Nov 03 IB = 25 mA. IB = 22.5 mA. IB = 20 mA. IB = 17.5 mA. (5) IB = 15 mA. (6) IB = 12.5 mA. (7) IB = 10 mA. (8) IB = 7.5 mA. (9) IB = 5 mA. (10) IB = 2.5 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 9 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 03 REFERENCES IEC JEDEC JEITA TO-243 SC-62 10 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and 2004 Nov 03 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp12 Date of release: 2004 Nov 03 Document order number: 9397 750 13881