Si4214DDY Datasheet

Si4214DDY
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.0195 at VGS = 10 V
8.5
0.023 at VGS = 4.5 V
8.6
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFETPower MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
7.1
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
D1
D2
G1
G2
Top View
Ordering Information:
Si4214DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
7.5
ID
TA = 25 °C
7.5b, c
5.9b, c
TA = 70 °C
IDM
Pulsed Drain Current
TC = 25 °C
Source-Drain Current Diode Current
30
1.8b, c
Pulsed Source-Drain Current
ISM
30
Single Pulse Avalanche Current
IAS
10
L = 0.1 mH
EAS
5
TC = 25 °C
3.1
TC = 70 °C
Maximum Power Dissipation
A
2.8
IS
TA = 25 °C
Single Pulse Avalanche Energy
V
8.5
TC = 70 °C
Continuous Drain Current (TJ = 150 °C)
Unit
2
PD
TA = 25 °C
W
2b, c
1.25b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Max.
t  10 s
Symbol
RthJA
Typ.
Maximum Junction-to-Ambientb, d
52
62.5
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
30
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 65022
S11-2041-Rev. C, 17-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4214DDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
30
Typ.
Max.
Unit
Static
VDS
VGS = 0 V, ID = 250 µA
VDS/TJ
ID = 250 µA
3
VGS(th)/TJ
ID = 250 µA
- 5.2
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
1.2
mV/°C
2.5
V
100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS = 5 V, VGS = 10 V
20
µA
A
VGS = 10 V, ID = 8 A
0.016
0.0195
VGS = 4.5 V, ID = 5 A
0.019
0.023
VDS = 15 V, ID = 8 A
27
VDS = 15 V, VGS = 0 V, ID = 1 MHz
140
VDS = 15 V, VGS = 10 V, ID = 8 A
14.5
22
7.1
11

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
660
86
VDS = 15 V, VGS = 4.5 V, ID = 8 A
tr
Rise Time
Fall Time
Turn-On Delay Time
Turn-Off Delay Time
5.2
14
28
80
35
tf
12
24
td(on)
7
14
10
20
15
30
7
14
td(off)
VDD = 15 V, RL = 3 
ID  5 A, VGEN = 10 V, Rg = 1 
tf
Fall Time
2.6
45
tr
Rise Time
VDD = 15 V, RL = 3 
ID  5 A, VGEN = 4.5 V, Rg = 1 
0.5
18
td(off)
Turn-Off Delay Time
1.9
nC
2.7
f = 1 MHz
td(on)
Turn-On Delay Time
pF

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
IS
TC = 25 °C
2.8
ISM
VSD
30
IS = 2 A
A
0.77
1.1
Body Diode Reverse Recovery Time
trr
17
34
ns
Body Diode Reverse Recovery Charge
Qrr
9
18
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Body Diode Voltage
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
10
7
V
nS
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65022
S11-2041-Rev. C, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4214DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
40
VGS = 10 V thru 4 V
8
I D - Drain Current (A)
I D - Drain Current (A)
32
24
VGS = 3 V
16
6
4
TC = 25 °C
2
8
TC = 125 °C
0
0.0
TC = - 55 °C
0
0.5
1.0
1.5
2.0
0
2.5
1
2
3
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0.030
1000
0.026
800
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Output Characteristics
0.022
VGS = 4.5 V
0.018
VGS = 10 V
0.014
5
Ciss
600
400
Coss
200
Crss
0
0.010
0
10
20
30
ID - Drain Current (A)
40
50
0
6
12
On-Resistance vs. Drain Current and Gate Voltage
30
1.8
R DS(on) - On-Resistance (Normalized)
ID = 8 A
VGS - Gate-to-Source Voltage (V)
24
Capacitance
10
8
VDS = 10 V
6
VDS = 20 V
VDS = 15 V
4
2
0
0.0
18
VDS - Drain-to-Source Voltage (V)
3.2
6.4
9.6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65022
S11-2041-Rev. C, 17-Oct-11
12.8
16
ID = 8 A
1.6
VGS = 10 V
1.4
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4214DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.10
ID = 8 A
I S - Source Current (A)
10
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
TJ = 25 °C
1
0.1
0.01
0.08
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
Source-Drain Diode Forward Voltage
3
4
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.5
50
0.2
40
- 0.1
Power (W)
VGS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
ID = 5 mA
- 0.4
30
20
ID = 250 µA
- 0.7
- 1.0
- 50
10
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65022
S11-2041-Rev. C, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4214DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
I D - Drain Current (A)
8
6
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
2.4
0.9
Power (W)
Power (W)
Current Derating*
1.6
0.6
0.3
0.8
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
TA - Ambient Temperature (°C)
150
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65022
S11-2041-Rev. C, 17-Oct-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4214DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65022.
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Document Number: 65022
S11-2041-Rev. C, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000