Si4660DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0058 at VGS = 10 V 23.1 0.007at VGS = 4.5 V 21 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 17 nC APPLICATIONS • DC/DC Conversion - High Side - Low Side SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4660DY-T1-E3 (Lead (Pb)-free) Si4660DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD TJ, Tstg Limit 25 ± 16 23.1 18.5 17.2b, c 13.8b, c 70 5 2.8b, c 30 Unit 45 5.6 3.6 3.1b, c 2.0b, c - 55 to 150 mJ V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 34 18 Maximum 40 22 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 69533 S09-0138-Rev. B, 02-Feb-09 www.vishay.com 1 Si4660DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS /TJ VGS(th) Temperature Coefficient ΔVGS(th) /TJ Gate-Source Threshold Voltage V 29 ID = 250 µA mV/°C - 5.4 VGS(th) VDS = VGS , ID = 250 µA 2.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 1.0 30 µA A VGS = 10 V, ID = 15 A 0.0047 0.0058 VGS = 4.5 V, ID = 10 A 0.0057 0.007 VDS = 15 V, ID = 15 A 70 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 2410 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 26 5.6 1.3 2.5 25 40 14 25 150 22 35 td(on) 13 22 11 20 31 50 8 15 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 45 17 95 td(off) Turn-Off Delay Time 30 tf tr Rise Time pF nC 4.2 td(on) Turn-On Delay Time 330 146 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 5.0 ISM VSD 70 IS = 2.7 A 0.76 1.1 A V Body Diode Reverse Recovery Time trr 26 50 ns Body Diode Reverse Recovery Charge Qrr 19 35 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 14 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69533 S09-0138-Rev. B, 02-Feb-09 Si4660DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 2.0 1.6 VGS = 10 V thru 4 V I D - Drain Current (A) ID - Drain Current (A) 56 42 VGS = 3 V 28 14 1.2 0.8 TJ = 25 °C 0.4 TJ = 125 °C TJ = -- 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 3000 Ciss 0.0065 2400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 VDS - Drain-to-Source Voltage (V) 0.0070 0.0060 VGS = 4.5 V 0.0055 0.0050 VGS = 10 V 1800 1200 Coss 600 0.0045 0.0040 Crss 0 0 14 28 42 56 70 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 25 1.8 10 ID = 15 A ID = 10 A 1.6 6 VDS = 10 V VDS = 15 V 4 VDS = 20 V 2 (Normalized) 8 R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 1 1.4 1.2 1.0 VGS = 10 V 0.8 VGS = 4.5 V 0 0.0 6.2 12.4 18.6 24.8 31.0 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature ( °C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 69533 S09-0138-Rev. B, 02-Feb-09 150 www.vishay.com 3 Si4660DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 100 I D = 15 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.03 0.02 TA = 125 °C 0.01 TA = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 Power (W) V GS(th) Variance (V) 0.001 0.0 0.04 - 0.1 ID = 5 mA - 0.4 10 120 80 ID = 250 µA - 0.7 - 1.0 - 50 40 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power 100 Limited by R DS(on) * I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69533 S09-0138-Rev. B, 02-Feb-09 Si4660DY Vishay Siliconix 26.0 7.0 20.8 5.6 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15.6 10.4 5.2 4.2 2.8 1.4 0.0 0.0 0 25 50 75 100 125 150 0 TC - Case Temperature (°C) 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot 1.80 Power Dissipation (W) 1.44 1.08 0.72 0.36 0.00 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69533 S09-0138-Rev. B, 02-Feb-09 www.vishay.com 5 Si4660DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 3. TJM -- TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69533. www.vishay.com 6 Document Number: 69533 S09-0138-Rev. B, 02-Feb-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000