UNISONIC TECHNOLOGIES CO., LTD UT9435-H Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT9435-H is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Note: UT9435G-K06B-2020-R Pin Assignment: G: Gate Package DFN-6B(2×2) D: Drain S: Source 1 D 2 D Pin Assignment 3 4 5 6 G S D D 7 D 8 S Packing Tape Reel MARKING 435H Date Code www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R210-007.a UT9435-H Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R210-007.a UT9435-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -4.2 A Pulsed Drain Current (Note 1, 2) IDM -20 A Power Dissipation (TA=25°C) PD 1.38 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Note: Surface mounted on 1 in 2 copper pad of FR4 board, t ≤10s. RATINGS 90 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS ∆BVDSS/∆TJ VGS =0 V, ID =-250 uA VDS=-30V, VGS=0V VGS= ±20V Reference to 25℃, ID=-1mA -30 -1 Static Drain-Source On-Resistance (Note 2) RDS(ON) VDS=VGS, ID=-250uA VGS=-10V, ID=-4A VGS=-4.5V, ID=-2A VGS(TH) DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=-25V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VDS=-15V,ID=-1A, RG=3.3Ω, V Turn-OFF Delay Time tD(OFF) GS=-10V,RD=15Ω Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=-25V, VGS=-4.5V, ID=-4A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-1A, VGS=0V Reverse Recovery Time tRR IS=-4A, VGS=0V, dI/dt=-100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300µs , duty cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD TYP MAX UNIT -1 ±100 V uA nA V/℃ -3 50 90 V mΩ mΩ 520 180 130 830 pF pF pF 10 7 26 14 10 2 6 48 40 292 112 16 ns ns ns ns nC nC nC -1.3 V ns nC -0.1 30 24 3 of 5 www.unisonic.com.tw QW-R210-007.a UT9435-H Preliminary UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 4 of 5 www.unisonic.com.tw QW-R210-007.a UT9435-H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw QW-R210-007.a