Analog Power AM2300N N-Channel 20-V (D-S) MOSFET • • • • • ed These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ID (A) 4.3 3.5 2. 5- V R at PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.035 @ VGS = 4.5V 20 0.050 @ VGS = 2.5V Low rDS(on) Provides Higher Efficiency and Extends Battery Life Low gate charge 7nC High performance High current handling Miniature SOT-23 Surface Mount Package Saves Board Space G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS 20 Drain-Source Voltage V ±8 VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25oC a o TA=70 C b 4.3 ID IDM a 10 IS Continuous Source Current (Diode Conduction) TA=25 C TA=70oC 1.25 PD W 0.8 TJ, Tstg Operating Junction and Storage Temperature Range A 0.46 o Power Dissipationa A 3.3 o C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t <= 5 sec Steady-State RTHJA Maximum 100 166 Units o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 July, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM2300_D Analog Power AM2300N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) A Drain-Source On-Resistance A Forward Tranconductance Diode Forward Voltage rDS(on) gfs VSD 0.7 VDS = 0 V, VGS = 8 V 100 nA VDS = 16 V, VGS = 0 V 1 10 uA o VDS = 20 V, VGS = 0 V, TJ = 55 C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.3 A VGS = 2.5 V, ID = 3.5 A VDS = 5 V, ID = 3.0 A IS = 0.46 A, VGS = 0 V 10 A 30 40 11 0.65 35 50 1.20 mΩ S V b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS = 10 V, VGS = 4.5 V, ID = 3.0 A VDS = 15 V, VGS = 0 V, f = 1MHz VDD = 10 V, ID = 1 A , RG = 6 Ω, VGEN = 4.5 V 7.0 1.20 1.90 700 175 85 9 11 18 5 nC pF ns Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 July, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM2300_D Analog Power AM2300N Typical Electrical Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with with Temperature Gate to Source Voltage Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Transfer Characteristics 3 July, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM2300_D Analog Power AM2300N Typical Electrical Characteristics Figure 7. Gate Charge Characteristic Figure 8. Capacitance Characteristic Figure 10. Single Pulse Maximum Power Figure 9. Maximum Safe Operating Area Dissipation Normalized Thermal Transient Impedance, Junction to Ambient 4 July, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM2300_D Analog Power AM2300N Package Information 5 July, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM2300_D