Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT80N08
Power MOSFET
80A, 80V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UTT80N08 is an N-channel MOSFET using UTC
advanced technology. It can be used in applications, such as power
supply (secondary synchronous rectification), industrial and primary
switch etc.
„
FEATURES
* Trench FET Power MOSFETS Technology
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT80N08L-TA3-T
UTT80N08G-TA3-T
UTT80N08L-TF1-T
UTT80N08G-TF1-T
Note: G: GND, D: Drain, S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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UTT80N08
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate Source Voltage
VGS
±20
V
Continuous Drain Current
ID
80
A
Pulsed Drain Current
IDM
320
A
Avalanche Energy, Single Pulse
EAS
320
mJ
TO-220
137
W
Power Dissipation
PD
TO-220F1
70
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
L=0.1mH, IAS=80A, VDD=25V, RG=20Ω, Starting TJ =25°C.
„
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/ TO-220F1
TO-220
Junction to Case
TO-220F1
„
SYMBOL
θJA
θJC
RATINGS
62.5
0.91
1.77
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
ID=250μA, VGS=0V
80
Drain-Source Breakdown Voltage
BVDSS
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
0.01
±1
VDS=0V, VGS=±20V
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.1
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=80A
DYNAMIC PARAMETERS
Input Capacitance
CISS
4700
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
1260
Reverse Transfer Capacitance
CRSS
580
SWITCHING PARAMETERS
Gate to Source Charge
QGS
25
Gate to Drain Charge
QGD
VDD=60V, VGS=0~10V, ID=80A
69
Total Gate Charge
QG
144
26
Turn-ON Delay Time
tD(ON)
Rise Time
tR
50
VDD=40V, RG=2.2Ω
ID=80A, VGS=10V
Turn-OFF Delay Time
tD(OFF)
61
Fall-Time
tF
30
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
Current
Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=80A
0.9
Note: 1. Defined by design. Not subject to production test.
2. Qualified at -20V and +20V.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MAX
UNIT
1
±100
V
µA
nA
4.0
12
V
mΩ
pF
pF
pF
37
116
180
80
320
1.3
nC
nC
nC
ns
ns
ns
ns
A
V
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UTT80N08
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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