UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT80N08L-TA3-T UTT80N08G-TA3-T UTT80N08L-TF1-T UTT80N08G-TF1-T Note: G: GND, D: Drain, S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 3 QW-R502-468.b UTT80N08 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate Source Voltage VGS ±20 V Continuous Drain Current ID 80 A Pulsed Drain Current IDM 320 A Avalanche Energy, Single Pulse EAS 320 mJ TO-220 137 W Power Dissipation PD TO-220F1 70 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. L=0.1mH, IAS=80A, VDD=25V, RG=20Ω, Starting TJ =25°C. THERMAL DATA PARAMETER Junction to Ambient TO-220/ TO-220F1 TO-220 Junction to Case TO-220F1 SYMBOL θJA θJC RATINGS 62.5 0.91 1.77 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP OFF CHARACTERISTICS ID=250μA, VGS=0V 80 Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS VDS=80V, VGS=0V 0.01 ±1 VDS=0V, VGS=±20V Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.1 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=80A DYNAMIC PARAMETERS Input Capacitance CISS 4700 Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 1260 Reverse Transfer Capacitance CRSS 580 SWITCHING PARAMETERS Gate to Source Charge QGS 25 Gate to Drain Charge QGD VDD=60V, VGS=0~10V, ID=80A 69 Total Gate Charge QG 144 26 Turn-ON Delay Time tD(ON) Rise Time tR 50 VDD=40V, RG=2.2Ω ID=80A, VGS=10V Turn-OFF Delay Time tD(OFF) 61 Fall-Time tF 30 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Pulsed Current ISM Drain-Source Diode Forward Voltage VSD ISD=80A 0.9 Note: 1. Defined by design. Not subject to production test. 2. Qualified at -20V and +20V. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT 1 ±100 V µA nA 4.0 12 V mΩ pF pF pF 37 116 180 80 320 1.3 nC nC nC ns ns ns ns A V 2 of 3 QW-R502-468.b UTT80N08 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-468.b