Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N15
Preliminary
Power MOSFET
10A, 150V, 0.3Ω, N-CHANNEL
POWER MOSFETS
1
TO-220

DESCRIPTION
The UTC 10N15 is an N-channel enhancement mode silicon-gate
power field effect transistors, it uses UTC’s advanced technology to
provide the customers with high breakdown voltage etc.
The UTC 10N15 is suitable for switching converters, switching
regulators, relay drivers and motor drivers, etc.

FEATURES
1
TO-220F1
1
TO - 252
* RDS(ON)<0.3Ω @VGS=10V, ID=10A
* High breakdown voltage

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N15L-TA3-T
10N15G-TA3-T
TO-220
10N15L-TF1-T
10N15G-TF1-T
TO-220F1
10N15L-TN3-T
10N15G-TN3-T
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 1)
VDSS
150
V
Drain-Gate Voltage (RGS=20kΩ) (TJ=25~125°C)
VDGR
150
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
10
A
Drain Current
25 (Note 2)
A
Pulsed
IDM
TO-220
100
W
Power Dissipation
PD
TO-220F1
62
W
TO-252
54
W
TO-220
0.8
W/°C
Linear Derating Factor
TO-220F1
0.48
W/°C
TO-252
0.43
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width is limited by maximum junction temperature.
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220/TO-220F1
62.5
Junction to Ambient
θJA
°С/W
TO-252
110
TO-220
1.25
Junction to Case
θJC
°С/W
TO-220F1
2
TO-252
2.3

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=Rated BVDSS, VGS=0V
Gate-Source
Forward
VGS=+20V, VDS=0V
IGSS
Leakage Current Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State
RDS(ON)
VGS=10V, ID=10A
Resistance (Note 1)
Drain-Source On Voltage (Note 1)
VDS(ON)
VGS=10V, ID=10A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=75V, VGS=10V,ID≈5A,
Rise Time
tR
RG=50Ω, RL=14.7Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage (Note 1)
VSD
ISD=5A
Diode Reverse Recovery Time
tRR
ISD=4A, dlSD/dt=100A/µs
Note: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
150
V
1
µA
+100 nA
-100 nA
2
40
165
90
90
200
4
V
0.3
Ω
3.0
V
850
230
100
pF
pF
pF
60
250
135
135
ns
ns
ns
ns
1.4
V
ns
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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