Analog Power AM2317P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.30 @ VGS = -10 V -30 0.50 @ VGS = -4.5V ID (A) -1.0 -0.9 G Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology D S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V ±20 Gate-Source Voltage VGS o TA=25 C a Continuous Drain Current o ID TA=70 C b Pulsed Drain Current Continuous Source Current (Diode Conduction) a ±0.9 IDM ±10 IS 0.4 o TA=25 C a Power Dissipation o Operating Junction and Storage Temperature Range a Maximum Junction-to-Ambient W 0.42 o TJ, Tstg -55 to 150 Symbol t <= 5 sec Steady-State A 0.5 PD TA=70 C THERMAL RESISTANCE RATINGS Parameter A ±0.75 RT HJA C Maximum Units 250 285 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2317_C Analog Power AM2317P o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions V(BR)DSS VGS = 0 V, ID = -250 uA Limits Unit Min Typ Max Switch Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate-Body Leakage -30 VDS = -24 V, VGS = 0 V -1 o µA VDS = -24 V, VGS = 0 V, T J = 55 C -10 IGSS VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) VDS = VGS, ID = -250 uA -0.80 -1.7 -2.6 V VDS = -5 V, VGS = -4.5 V -2 0.25 0.30 VGS = -4.5 V, ID = -0.9 A TJ = 55 C 0.53 0.66 VGS = -4.5 V, ID = -0.9 A 0.45 0.50 gfs VSD VDS = -5 V, ID = -1.1 A IS = -0.4 A, VGS = 0 V 2 -0.70 -1.2 Qg Qgs Qgd VDS = -10 V, VGS = -5 V, ID = -0.9 A 2.0 0.5 1.1 3.0 td(on) tr td(off) tf VDS = -10 V, ID = -0.9 A, RG = 50 Ω, VGEN = -10 V 8 16 36 33 16 32 93 94 Switch On Characteristics Gate-Threshold Voltage A On-State Drain Current ID(on) VGS = -10 V, ID = -1.0 A Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage Dynamic A A rDS(on) o A Ω S V b Total Gate Charge Gate-Source Charge Gate-Drain Charge nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time ns Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM2317_C Analog Power AM2317P Typical Electrical Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Gate to Source Voltage with Temperature Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3 PRELIMINARY Publication Order Number: DS-AM2317_C Analog Power AM2317P Typical Electrical Characteristics Figure 7. Breakdown Voltage With Figure 8. Body Diode Forward Voltage With Temperature Source Current & Temperature Figure 9. Capacitance Characteristic Figure 10. Gate Charge Characteristic Normalized Thermal Transient Impedance, Junction to Ambient Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM2317_C Analog Power AM2317P Typical Electrical Characteristics Figure 13. Transconductance Variation With Current & Temperature Figure 14. Maximum Safe Operation Area Figure 15. SOT-3 Maximum SteadyState Variation Power Dissipation versus Copper Pad Area Figure 16. Maximum State-State Drain Current Versus Copper Pad Area 5 PRELIMINARY Publication Order Number: DS-AM2317_C Analog Power AM2317P Package Information 6 PRELIMINARY Publication Order Number: DS-AM2317_C