ANALOGPOWER AM2317P

Analog Power
AM2317P
P - Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.30 @ VGS = -10 V
-30
0.50 @ VGS = -4.5V
ID (A)
-1.0
-0.9
G
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
D
S
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
VDS
-30
V
±20
Gate-Source Voltage
VGS
o
TA=25 C
a
Continuous Drain Current
o
ID
TA=70 C
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
±0.9
IDM
±10
IS
0.4
o
TA=25 C
a
Power Dissipation
o
Operating Junction and Storage Temperature Range
a
Maximum Junction-to-Ambient
W
0.42
o
TJ, Tstg -55 to 150
Symbol
t <= 5 sec
Steady-State
A
0.5
PD
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
A
±0.75
RT HJA
C
Maximum Units
250
285
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2317_C
Analog Power
AM2317P
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
V(BR)DSS
VGS = 0 V, ID = -250 uA
Limits
Unit
Min Typ Max
Switch Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
-30
VDS = -24 V, VGS = 0 V
-1
o
µA
VDS = -24 V, VGS = 0 V, T J = 55 C
-10
IGSS
VDS = 0 V, VGS = ±20 V
±100
nA
VGS(th)
VDS = VGS, ID = -250 uA
-0.80
-1.7
-2.6
V
VDS = -5 V, VGS = -4.5 V
-2
0.25
0.30
VGS = -4.5 V, ID = -0.9 A TJ = 55 C
0.53
0.66
VGS = -4.5 V, ID = -0.9 A
0.45
0.50
gfs
VSD
VDS = -5 V, ID = -1.1 A
IS = -0.4 A, VGS = 0 V
2
-0.70
-1.2
Qg
Qgs
Qgd
VDS = -10 V, VGS = -5 V,
ID = -0.9 A
2.0
0.5
1.1
3.0
td(on)
tr
td(off)
tf
VDS = -10 V, ID = -0.9 A,
RG = 50 Ω, VGEN = -10 V
8
16
36
33
16
32
93
94
Switch On Characteristics
Gate-Threshold Voltage
A
On-State Drain Current
ID(on)
VGS = -10 V, ID = -1.0 A
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
Dynamic
A
A
rDS(on)
o
A
Ω
S
V
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
ns
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM2317_C
Analog Power
AM2317P
Typical Electrical Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
Gate to Source Voltage
with Temperature
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM2317_C
Analog Power
AM2317P
Typical Electrical Characteristics
Figure 7. Breakdown Voltage With
Figure 8. Body Diode Forward Voltage With
Temperature
Source Current & Temperature
Figure 9. Capacitance Characteristic
Figure 10. Gate Charge Characteristic
Normalized Thermal Transient Impedance, Junction to Ambient
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM2317_C
Analog Power
AM2317P
Typical Electrical Characteristics
Figure 13. Transconductance Variation
With Current & Temperature
Figure 14. Maximum Safe Operation Area
Figure 15. SOT-3 Maximum SteadyState Variation Power Dissipation
versus Copper Pad Area
Figure 16. Maximum State-State Drain
Current Versus Copper Pad Area
5
PRELIMINARY
Publication Order Number:
DS-AM2317_C
Analog Power
AM2317P
Package Information
6
PRELIMINARY
Publication Order Number:
DS-AM2317_C