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Analog Power
AM2322N
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low rDS(on) provides higher efficiency and
extends battery life
•
Low thermal impedance copper leadframe
SOT-23 saves board space
•
Fast switching speed
•
High performance trench technology
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.085 @ VGS = 10V
30
0.125 @ VGS = 4.5V
ID (A)
2.5
1.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
30
VDS
Drain-Source Voltage
V
VGS
±20
Gate-Source Voltage
TA=25oC
Continuous Drain Currenta
Pulsed Drain Current
o
TA=70 C
b
2.5
ID
IDM
a
10
IS
Continuous Source Current (Diode Conduction)
TA=25 C
o
TA=70 C
1.25
PD
Operating Junction and Storage Temperature Range
A
0.46
o
Power Dissipationa
A
2
W
0.8
TJ, Tstg
o
C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
Symbol
t <= 5 sec
Steady-State
RTHJA
Maximum
150
200
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2322_F
Analog Power
AM2322N
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
1.0
VDS = 0 V, VGS = 8 V
VDS = 16 V, VGS = 0 V
1.5
4
7
100
62
102
85
125
o
VDS = 20 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = 4.5 V
VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 1.7 A
VDS = 5 V, ID = 3.0 A
IS = 0.46 A, VGS = 0 V
3
1
10
6
V
nA
uA
A
3.5
0.65
mΩ
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V,
ID = 2.5 A
VDS = 15 V, VGS = 0 V,
f = 1MHz
VDD = 10 V,
ID = 1 A ,
RG = 6 Ω, VGEN = 4.5 V
3.5
0.8
1.0
720
165
60
10
13
14
4
7
2
2
1500
400
200
20
30
30
20
nC
pF
ns
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM2322_F
Analog Power
AM2322N
Typical Electrical Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
with Temperature
Drain Current and Temperature
Figure 6. Gate Threshold Variation with
Figure 5. Transfer Characteristics
Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM2322_F
Analog Power
AM2322N
Typical Electrical Characteristics
Figure 7. Gate Charge Characteristic
Figure 8. Capacitance Characteristic
Figure 10. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
with Temperature
Normalized Thermal Transient Impedance, Junction to Ambient
4
PRELIMINARY
Publication Order Number:
DS-AM2322_F
Analog Power
AM2322N
Package Information
5
PRELIMINARY
Publication Order Number:
DS-AM2322_F