Reliability Report

AOS Semiconductor
Product Reliability Report
AOI8N25,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOI8N25. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOI8N25 passes AOS quality and
reliability requirements.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOI8N25 has been fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications. By providing low
RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly
into new and existing offline power supply designs. These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
-RoHS Compliant
-Halogen Free
Details refer to the datasheet.
II. Die / Package Information:
AOI8N25
Standard sub-micron
250V N channel MOSFET
Package Type
TO251A
Lead Frame
Bare Cu
Die Attach
Soft solder
Bonding
Al & Au wire
Mold Material
Epoxy resin with silica filler
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
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III. Result of Reliability Stress for AOI8N25
Test Item
Test Condition
Time
Point
MSL
Precondition
168hr 85°c
/85%RH +3 cycle
reflow@260°c
Temp = 150°c ,
Vgs=100% of
Vgsmax
-
12 lots
2343pcs
0
JESD22A113
168hrs
500 hrs
1000 hrs
2 lots
2 lots
4 lots
539pcs
0
JESD22A108
HTRB
Temp = 150°c ,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
(Note A*)
2 lots
2 lots
4 lots
77 pcs / lot
539pcs
0
JESD22A108
HAST
130 +/- 2°c ,
85%RH, 33.3 psi,
Vgs = 100% of
Vgs max
121°c , 29.7psi,
RH=100%
100 hrs
(Note A*)
9 lots
77 pcs / lot
495pcs
0
JESD22A110
96 hrs
(Note A*)
12 lots
55 pcs / lot
924pcs
0
JESD22A102
(Note A*)
77 pcs / lot
-65°c to 150°c ,
air to air,
250 / 500
cycles
0
JESD22A104
HTGB
Pressure Pot
Temperature
Cycle
Lot
Attribution
12 lots
(Note A*)
Total
Sample size
Number
of
Failures
924pcs
Reference
Standard
77 pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 4
MTTF = 26450 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOI8N25). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
9
= 1.83 x 10 / [2x (4x77x168 +4x77x500 +8x77x1000) x258] = 4
9
8
MTTF = 10 / FIT =2.32 x 10 hrs = 26450 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
258
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
130 deg C
150 deg C
2.59
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